2SC5695

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

2SC5695
Horizontal Deflection Output for High Resolution Display,
Color TV

High voltage: VCBO = 1500 V

Low saturation voltage: VCE (sat) = 3 V (max)

High speed: tf (2) = 0.1 s (typ.)

Unit: mm

Maximum Ratings (Tc = 25C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

1500

Collector-emitter voltage

VCEO

700

Emitter-base voltage

VEBO

DC

IC

22

Pulse

ICP

44

Base current

IB

11

Collector power dissipation

PC

200

Junction temperature

Tj

150

JEDEC

Tstg

-55~150

JEITA

Collector current

Storage temperature range

TOSHIBA

Weight: 9.75 g (typ.)

Electrical Characteristics (Tc = 25C)

Characteristics
Collector cut-off current

Symbol
ICBO

2-21F2A

Test Condition
VCB = 1500 V, IE = 0

Min

Typ.

Max

Unit

mA

IEBO

VEB = 5 V, IC = 0

10

mA

V(BR) CEO

IC = 10 mA, IB = 0

700

hFE (1)

VCE = 5 V, IC = 2 A

20

50

hFE (2)

VCE = 5 V, IC = 10 A

17

hFE (3)

VCE = 5 V, IC = 17 A

4.8

8.3

Collector-emitter saturation voltage

VCE (sat)

IC = 17 A, IB = 4.25 A

Base-emitter saturation voltage

VBE (sat)

IC = 17 A, IB = 4.25 A

1.0

1.5

fT

VCE = 10 V, IC = 0.1 A

MHz

VCB = 10 V, IE = 0, f = 1 MHz

280

pF

ICP = 8 A, IB1 (end) = 1.4 A,

fH = 64 kHz

2.5

0.15

0.3

1.6

1.8

0.1

0.15

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Transition frequency
Collector output capacitance
Storage time
Switching time

Fall time
Storage time
Fall time

Cob
tstg (1)
tf (1)
tstg (2)
tf (2)

ICP = 8 A, IB1 (end) = 1.1 A,

fH = 100 kHz

ms

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2SC5695

IC VCE

Collector current

IC

(A)

20

3.5

16

1.8

1.6

1.4

1.2

1.0

2.5

12

0.8
0.6
0.4

IB = 0.2 A

4
Common emitter
Tc = 25C
0
0

Collector-emitter voltage

VCE

10

(V)

hFE IC
300
100

DC current gain

hFE

Tc = 100C
25

30

-25
10

3
Common emitter
VCE = 5 V

1
0.5
0.01

0.03

0.1

0.3

Collector current

IC

10

30

(A)

IC VBE
20

16

Collector current

IC

(A)

Common emitter
VCE = 5 V

12

0
0

Tc = 100C

0.2

0.4

0.6

-25

25

0.8

Base-emitter voltage VBE

1.2

(V)

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2SC5695

VCE IB

VCE (sat) IC
10

Common
emitter
Tc = -25C

Collector emitter saturation voltage

VCE (sat) (V)

Collector emitter voltage VCE

(V)

10

IC = 17 A

2
7 8 9
0
0

10 11 12

13

14

15

16

5
3

1.6

2.4

Base current

IB

3.2

10

0.5

IC/IB = 4

0.1

Collector emitter saturation voltage

VCE (sat) (V)

(V)
Collector emitter voltage VCE

4
IC = 17 A

0
0

15

16

1.6

2.4

Base current

IB

3.2

10

0.5

IC/IB = 4

0.1

IC = 17 A
4

0
0

0.8

1.6

2.4

Base current

IB

14

15

3.2

10

30 50

IC

100

(A)

VCE (sat) IC
10

12 13

Collector current

Collector emitter saturation voltage

VCE (sat) (V)

(V)
Collector emitter voltage VCE

6
8

0.3

Common
emitter
Tc = 100C

9 10 11

(A)

VCE IB

7 8

IC

100

Common emitter
Tc = 25C

(A)

10

30 50

0.05
0.2
0.8

10

VCE (sat) IC
10

Common
emitter
Tc = 25C

13 14

Collector current

VCE IB

7 8 9 10 11 12

(A)

10

0.3

0.05
0.2
0.8

Common emitter
Tc = -25C

16

5
3

(A)

10

IC/IB = 4

0.3

0.1

Collector current

6
8

0.5

0.05
0.2

Common emitter
Tc = 100C

10

IC

30 50

100

(A)

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Transient thermal impedance (junction-case)

rth (j-c) (C/W)

rth (j-c) tw
10

0.1

0.01
Tc = 25C (infinite heat sink)
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
0.001
10 m

100 m

1m

10 m

100 m

Pulse width

tw

10

100

PC Tc

Safe Operating Area

100

250
100 ms*

10 ms*

PC

IC max
(continuous)

Collector power dissipation

1 ms*
10

(A)

10 ms*

IC
Collector current

Infinite heat sink

(W)

IC max (pulsed)

100 ms*
1

DC operation
Tc = 25C

200

150

100

50

0
0
0.1

25

50

75

100

Case temperature Tc
*: Single nonrepetitive pulse
Tc = 25C
Curves must be derated linearly with
increase in temperature.

0.01
1

1000

(s)

10

125

150

(C)

VCEO
max
100

Collector-emitter voltage VCE

1000

(V)

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RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2001-10-29

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