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ZTX750

ZTX751

ISSUE 2 – JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot= 1 Watt

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER

SYMBOL

Transition
Frequency

fT

Switching Times

ton
toff

Output
Capacitance

ZTX750
MIN. TYP.
100

ZTX751
MAX. MIN. TYP.

140

100

MAX.

UNIT CONDITIONS.

140

MHz

IC=-100mA, VCE=-5V
f=100MHz

40

40

ns

450

450

ns

IC=-500mA, VCC=-10V
IB1=IB2=-50mA

30

Cobo

30

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS
PARAMETER

SYMBOL

MAX.

UNIT

175
116
70

°C/W
°C/W
°C/W

Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)

Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case

C
B

PARAMETER

SYMBOL

2.0

C
1.5

Am

0.5
0

-40 -20

0

20 40

bie

as

e

nt t

te

m

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=1 (D.C.)

t1

D=t1/tP
tP

100

D=0.5

D=0.2
D=0.1

0.001

0.01

0.1

1

10

UNIT
V

Collector-Base Voltage

VCBO

-60

-80

VCEO

-45

-60

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-6

A

Continuous Collector Current

IC

-2

A

Power Dissipation: at Tamb=25°C
derate above 25°C

Ptot

1
5.7

W
mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

V

ZTX750

ZTX751

PARAMETER

SYMBOL

Collector-Base
Breakdown
Voltage

V(BR)CBO

-60

-80

V

IC=-100µA

Collector-Emitter
Breakdown
Voltage

V(BR)CEO

-45

-60

V

IC=-10mA

Emitter-Base
Breakdown
Voltage

V(BR)EBO

-5

-5

V

IE=-100µA

Collector Cut-Off
Current

ICBO

-10

µA
µA
µA
µA

VCB=-45V
VCB=-60V
VCB=-45V,Tamb=100°C

-0.1

-0.1

µA

VEB=-4V

Collector-Emitter
VCE(sat)
Saturation Voltage

-0.15 -0.3
-0.28 -0.5

-0.15 -0.3
-0.28 -0.5

V
V

IC=-1A, IB=-100mA
IC=-2A, IB=-200mA

Base-Emitter
VBE(sat)
Saturation Voltage

-0.9

-0.9

-1.25 V

IC=-1A, IB=-100mA

MIN. TYP.

MAX. MIN. TYP.

-0.1

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

Emitter Cut-Off
Current

-10

IEBO

-1.25

3-257

MAX.

-0.1

100

T -Temperature (°C)

3-258

ZTX751

Collector-Emitter Voltage

Single Pulse

0
0.0001

ZTX750

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

200

Thermal Resistance (°C/W)

Max Power Dissipation - (Watts)

2.5

E

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

1.0

ZTX750
ZTX751

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS

UNIT CONDITIONS.

VCB=-60V,Tamb=100°C

5 D=0.1 100 T -Temperature (°C) 3-258 ZTX751 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX750 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).15 -0. IB=-100mA IC=-2A. -0. † Device mounted on P.01 0.C. PARAMETER SYMBOL Transition Frequency fT Switching Times ton toff Output Capacitance ZTX750 MIN.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C V ZTX750 ZTX751 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO -60 -80 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -45 -60 V IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-100µA Collector Cut-Off Current ICBO -10 µA µA µA µA VCB=-45V VCB=-60V VCB=-45V. Pulse width=300µs.1 µA VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.0 ZTX750 ZTX751 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS UNIT CONDITIONS.001 0. 140 MHz IC=-100mA.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 D=1 (D.Tamb=100°C . 100 ZTX751 MAX. IB=-100mA MIN.2 D=0. IB=-200mA Base-Emitter VBE(sat) Saturation Voltage -0. TYP. TYP. MIN. TYP.B.28 -0. with copper equal to 1 sq.1 -0.28 -0.) t1 D=t1/tP tP 100 D=0.C. TYP.Tamb=100°C -0. VCB=-60V. MAX. 1.15 -0. UNIT CONDITIONS.(Watts) 2.1 Pulse Width (seconds) Derating curve Maximum transient thermal impedance Emitter Cut-Off Current -10 IEBO -1. Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX.ZTX750 ZTX751 ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Inch minimum.25 3-257 MAX.1 0. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case C B PARAMETER SYMBOL 2.3 -0.25 V IC=-1A. MIN.1 1 10 UNIT V Collector-Base Voltage VCBO -60 -80 VCEO -45 -60 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Power Dissipation: at Tamb=25°C derate above 25°C Ptot 1 5. 140 100 MAX. -0.5 Am 0. VCC=-10V IB1=IB2=-50mA 30 Cobo 30 pF VCB=10V f=1MHz *Measured under pulsed conditions.0 C 1. 200 Thermal Resistance (°C/W) Max Power Dissipation .3 -0.5 -0. VCE=-5V f=100MHz 40 40 ns 450 450 ns IC=-500mA.5 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.9 -1.5 V V IC=-1A.9 -0.

001 0.1 D.1 IC .01 0.01 0.0001 0.01 0.1 1 IC .1 1 10 0.001 0.1 1 10 IC .(Volts) 0.4 0.5 0.2 0.Collector Current (Amps) 1. 1s 100ms 10ms 1.Collector Current (Amps) 1 IC .8 0.Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-259 100 .(Volts) 0.01 0.4 1.0 VCE=2V 0.ZTX750 ZTX751 TYPICAL CHARACTERISTICS 0.1 1 10 Single Pulse Test at Tamb=25°C 10 VBE .001 IC .0001 0.Collector Current (Amps) 1 0.Collector Current (Amps) hFE v IC VBE(sat) v IC IC .8 0.C.1 0 0.0ms 100µs ZTX750 ZTX751 10 0.1 1 10 IB1=IB2=IC/10 ts ns 700 120 600 100 500 80 400 60 300 40 200 20 100 0 0 ts td tf tr 0.4 IC/IB=10 Switching time VCE(sat) .0001 0.2 1.2 VBE(sat) .6 0 0.01 0.Collector Current (Amps) VCE .6 td tr tf ns 140 0.6 0.(Volts) hFE .0 IC/IB=10 0.Gain 225 175 VCE=2V 125 75 1.Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.3 0.

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