You are on page 1of 8

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.

PART NUMBER

PACKAGE

NP32N055HLE

TO-251

NP32N055ILE

TO-252

FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 24 m MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 m MAX. (VGS = 5.0 V, ID = 16 A)
Low Ciss : Ciss = 1300 pF TYP.

(TO-251)

Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25C)


Drain to Source Voltage

VDSS

55

Gate to Source Voltage

VGSS

20

Drain Current (DC)

ID(DC)

32

Drain Current (Pulse) Note1

ID(pulse)

100

Total Power Dissipation (TA = 25C)

PT

1.2

Total Power Dissipation (TC = 25C)

PT

66

Note2

IAS

28 / 21 / 8

Single Avalanche Energy Note2

EAS

7.8 / 44 / 64

mJ

Channel Temperature

Tch

175

Storage Temperature

Tstg

55 to +175

Single Avalanche Current

(TO-252)

Notes 1. PW 10 s, Duty cycle 1 %


2. Starting Tch = 25C, RG = 25 , VGS = 20 V0 V (See Figure 4.)

THERMAL RESISTANCE
Channel to Case

Rth(ch-C)

2.27

C/W

Channel to Ambient

Rth(ch-A)

125

C/W

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14137EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan

The mark shows major revised points.

1999

NP32N055HLE, NP32N055ILE
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS

SYMBOL

Drain to Source On-state Resistance

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

RDS(on)1

VGS = 10 V, ID = 16 A

19

24

RDS(on)2

VGS = 5.0 V, ID = 16 A

22

29

RDS(on)3

VGS = 4.5 V, ID = 16 A

24

33

Gate to Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 A

1.5

2.5

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 16 A

16

Drain Leakage Current

IDSS

VDS = 55 V, VGS = 0 V

10

Gate to Source Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

10

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V, f = 1 MHz

1300

2000

pF

Output Capacitance

Coss

180

270

pF

Reverse Transfer Capacitance

Crss

90

160

pF

Turn-on Delay Time

td(on)

ID = 16 A, VGS(on) = 10 V, VDD = 28 V,

14

31

ns

RG = 1

20

ns

td(off)

40

81

ns

tf

7.4

19

ns

Rise Time

tr

Turn-off Delay Time


Fall Time
Total Gate Charge

QG1

ID = 32 A, VDD = 44 V, VGS = 10 V

27

41

nC

QG2

ID = 32 A, VDD = 44 V, VGS = 5.0 V

15

23

nC

Gate to Source Charge

QGS

nC

Gate to Drain Charge

QGD

nC

IF = 32 A, VGS = 0 V

1.0

IF = 32 A, VGS = 0 V, di/dt = 100 A/s

41

ns

58

nC

Body Diode Forward Voltage

VF(S-D)

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TEST CIRCUIT 1 AVALANCHE CAPABILITY


D.U.T.
RG = 25
PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME


D.U.T.

50

VGS
RL

Wave Form

RG

PG.

VDD

VGS
0

VGS(on)

10 %

90 %

VDD
VDS
90 %

BVDSS
IAS

VDS

VDS

ID

Starting Tch

= 1 s
Duty Cycle 1 %

TEST CIRCUIT 3 GATE CHARGE

PG.

50

10 % 10 %

Wave Form

VDD

D.U.T.
IG = 2 mA

90 %

VDS

VGS
0

RL
VDD

Data Sheet D14137EJ3V0DS

td(on)

tr
ton

td(off)

tf
toff

NP32N055HLE, NP32N055ILE
TYPICAL CHARACTERISTICS (TA = 25 C)

Figure2. TOTAL POWER DISSIPATION vs.


CASE TEMPERATURE

Figure1. DERATING FACTOR OF FORWARD BIAS


SAFE OPERATING AREA

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

70
100
80
60
40
20
0

60
50
40
30
20
10
0

25

50

75

100 125 150 175 200

25

d
ite V)
Lim10
=

10

PW

ID(pulse)
ID(DC)

1m

DC
P
Limowe
ite r D
d iss

=1

10

Single Pulse Avalanche Energy - mJ

R tV
(a

ipa

tio

1
TC = 25C
Single Pulse

0.1
0.1

10

100 125 150 175 200

70
64 mJ

60
50
44 mJ

IAS = 8 A
21 A
28 A

40
30
20
10 7.8 mJ
0
25

100

VDS - Drain to Source Voltage - V

50

75

100

125

150

175

Starting Tch - Starting Channel Temperature - C

Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH


1000
rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

1000

)
(on
DS GS

75

Figure4. SINGLE AVALANCHE ENERGY


DERATING FACTOR

Figure3. FORWARD BIAS SAFE OPERATING AREA

100

50

TC - Case Temperature - C

TC - Case Temperature - C

Rth(ch-A) = 125 C/W

100

10
Rth(ch-C) = 2.27 C/W
1

0.1

0.01
10

Single Pulse
TC = 25C
100

1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE

Figure7. DRAIN CURRENT vs.


DRAIN TO SOURCE VOLTAGE

Figure6. FORWARD TRANSFER CHARACTERISTICS


100

120

Pulsed

Pulsed

10

ID - Drain Current - A

ID - Drain Current - A

100
TA = 55C
25C
75C
150C
175C

0.1

VGS =10 V

80
5.0 V

60
4.5 V

40
20

2.0

3.0

VDS = 10 V
5.0
6.0

4.0

RDS(on) - Drain to Source On-state Resistance - m

VDS - Drain to Source Voltage - V

Figure8. FORWARD TRANSFER ADMITTANCE vs.


DRAIN CURRENT

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.


GATE TO SOURCE VOLTAGE
40
Pulsed

100 Pulsed
VDS = 10 V

10

TA = 175C
75C
25C
55C

0.1

0.01
0.01

0.1

10

100

Figure10. DRAIN TO SOURCE ON-STATE


RESISTANCE vs. DRAIN CURRENT
80

Pulsed

70
60
50
40
30

VGS = 10 V
5.0 V
4.5 V

20
10
0
0.1

10

100

RDS(on) - Drain to Source On-state Resistance - m

VGS - Gate to Source Voltage - V

ID - Drain Current - A

VGS(th) - Gate to Source Threshold Voltage - V

| yfs | - Forward Transfer Admittance - S

0.01
1.0

30

ID = 16 A

20

10

10 12

14

16 18

20

VGS - Gate to Source Voltage - V

Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.


CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 A

2.0

1.0

50

ID - Drain Current - A

50

100

150

Tch - Channel Temperature - C

Data Sheet D14137EJ3V0DS

Figure13. SOURCE TO DRAIN DIODE


FORWARD VOLTAGE

Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.


CHANNEL TEMPERATURE
60

ISD - Diode Forward Current - A

1000

50
VGS = 4.5 V
5.0 V
10 V

30
20
10

100
VGS = 10 V
10
VGS = 0 V
1

ID = 16 A

50

50

100

Pulsed

0.1

150

0.5

Tch - Channel Temperature - C

Figure14. CAPACITANCE vs. DRAIN TO


SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss

Coss
Crss

10
0.1

10

1000

tf

100

td(off)
td(on)
10

tr

1
0.1

100

Figure16. REVERSE RECOVERY TIME vs.


DRAIN CURRENT

100

Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS


16

di/dt = 100 A/s


VGS = 0 V

100

10

VDS - Drain to Source Voltage - V

80

1000

trr - Reverse Recovery Time - ns

10

ID - Drain Current - A

VDS - Drain to Source Voltage - V

1
0.1

1.5

Figure15. SWITCHING CHARACTERISTICS

1000

100

1.0

VSD - Source to Drain Voltage - V

14
60

40

10

100

10
8
6

20

4
VDS

0
1.0

12

VGS
VDD = 44 V
28 V
11 V

2
ID = 32 A

12

16

20

24

28

VGS - Gate to Source Voltage - V

40

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

RDS(on) - Drain to Source On-state Resistance - m

NP32N055HLE, NP32N055ILE

32

QG - Gate Charge - nC

IF - Drain Current - A

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE
PACKAGE DRAWINGS (Unit: mm)

0.60.1

0.60.1
0.75

2.3 2.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)

0.50.1
1.0 MIN.
1.5TYP.

+0.2

1.3 MAX.

2.30.2

0.9
0.8
2.3 2.3 MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)

0.5

1.3 MAX.

0.8 4.3 MAX.

13.7 MIN.

7.0 MAX.

5.50.2

1.60.2

1.5-0.1

6.50.2
5.00.2

0.50.1

2.0
MIN.

5.00.2

2.30.2

1.5-0.1

6.50.2

+0.2

2) TO-252 (MP-3Z)

5.50.2
10.0 MAX.

1) TO-251 (MP-3)

EQUIVALENT CIRCUIT
Drain

Gate

Gate
Protection
Diode

Remark

Body
Diode

Source

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE
[MEMO]

Data Sheet D14137EJ3V0DS

NP32N055HLE, NP32N055ILE

The information in this document is current as of March, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4