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PD - 94648

IRFR3707Z
IRFU3707Z

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use

HEXFET Power MOSFET

VDSS RDS(on) max


9.5m:

30V

Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current

D-Pak
IRFR3707Z

Qg
9.6nC

I-Pak
IRFU3707Z

Absolute Maximum Ratings


Parameter

Max.

Units

30

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

20

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V

56

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V

39

IDM

Pulsed Drain Current

220

PD @TC = 25C

Maximum Power Dissipation

50

PD @TC = 100C

Maximum Power Dissipation

25

f
f

Linear Derating Factor

0.33

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range


Soldering Temperature, for 10 seconds

W/C
C

300 (1.6mm from case)

Thermal Resistance
Parameter
RJC

Junction-to-Case

RJA

Junction-to-Ambient (PCB Mount)

RJA

Junction-to-Ambient

g

Typ.

Max.

Units

3.0

C/W

50

110

Notes through are on page 11

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1
04/03/03

IRFR/U3707Z
Static @ TJ = 25C (unless otherwise specified)
Parameter

Min. Typ. Max. Units

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

30

VDSS/TJ

Breakdown Voltage Temp. Coefficient

0.023

RDS(on)

Static Drain-to-Source On-Resistance

7.5

9.5

10

12.5

Gate Threshold Voltage

1.35

1.80

2.25

Gate Threshold Voltage Coefficient

-5.0

mV/C
A

VDS = 24V, VGS = 0V

nA

VGS = 20V

VGS(th)
www.DataSheet4U.com VGS(th)/TJ
IDSS
IGSS
gfs
Qg

Drain-to-Source Leakage Current

1.0

150

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

Forward Transconductance

71

VGS = 0V, ID = 250A

V/C Reference to 25C, ID = 1mA


m VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A

e
e

VDS = VGS, ID = 250A

VDS = 24V, VGS = 0V, TJ = 125C


VGS = -20V
S

VDS = 15V, ID = 12A

nC

VGS = 4.5V

Total Gate Charge

9.6

14

Qgs1

Pre-Vth Gate-to-Source Charge

2.6

Qgs2

Post-Vth Gate-to-Source Charge

0.90

Qgd

Gate-to-Drain Charge

3.5

ID = 12A

Qgodr

Gate Charge Overdrive


Switch Charge (Qgs2 + Qgd)

2.6

See Fig. 16

Qsw

4.4

VDS = 15V

Qoss

Output Charge

5.8

td(on)

Turn-On Delay Time

8.0

VDD = 16V, VGS = 4.5V

tr

Rise Time

11

ID = 12A

td(off)

Turn-Off Delay Time

12

tf

Fall Time

3.3

Ciss

Input Capacitance

1150

Coss

Output Capacitance

260

Crss

Reverse Transfer Capacitance

120

nC

VDS = 15V, VGS = 0V

ns

Clamped Inductive Load

pF

VDS = 15V

VGS = 0V
= 1.0MHz

Avalanche Characteristics
EAS

Parameter
Single Pulse Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

c

Typ.

Units
mJ

Max.
42

12

5.0

mJ

Diode Characteristics
Parameter
IS

Continuous Source Current

Min. Typ. Max. Units

56

220

showing the
integral reverse

p-n junction diode.


TJ = 25C, IS = 12A, VGS = 0V

(Body Diode)
ISM

Pulsed Source Current

c

MOSFET symbol
A

(Body Diode)
VSD

Diode Forward Voltage

1.0

trr

Reverse Recovery Time

25

38

ns

Qrr

Reverse Recovery Charge

17

26

nC

ton

Forward Turn-On Time

Conditions

G
S

TJ = 25C, IF = 12A, VDD = 15V


di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRFR/U3707Z
10000

1000

ID, Drain-to-Source Current (A)

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100
BOTTOM

TOP

ID, Drain-to-Source Current (A)

TOP

1000

VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V

10
1
0.1

2.2V
0.01

100
BOTTOM

10

2.2V
1

20s PULSE WIDTH


Tj = 175C

20s PULSE WIDTH


Tj = 25C

0.001

0.1
0.1

10

0.1

VDS, Drain-to-Source Voltage (V)

10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

100

RDS(on) , Drain-to-Source On Resistance


(Normalized)

ID, Drain-to-Source Current ()

VGS
10V
6.0V
4.5V
4.0V
3.3V
2.8V
2.5V
2.2V

T J = 175C

10

T J = 25C

0.1

VDS = 10V
20s PULSE WIDTH
0.01

ID = 30A
VGS = 10V

1.5

1.0

0.5
0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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-60 -40 -20 0

20 40 60 80 100 120 140 160 180

T J , Junction Temperature (C)

Fig 4. Normalized On-Resistance


vs. Temperature

IRFR/U3707Z
10000

6.0

VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd

VGS, Gate-to-Source Voltage (V)

ID= 12A

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C, Capacitance(pF)

C oss = C ds + C gd

Ciss

1000

Coss

VDS= 24V
VDS= 15V

5.0

4.0

3.0

2.0

1.0

Crss
100

0.0
1

10

100

VDS, Drain-to-Source Voltage (V)

10

12

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.


Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.


Drain-to-Source Voltage

1000.00

1000

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

OPERATION IN THIS AREA


LIMITED BY R DS(on)

100.00

100

T J = 175C
10.00

1.00

T J = 25C

10

100sec
1msec

VGS = 0V
0.10

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

10msec

Tc = 25C
Tj = 175C
Single Pulse
0

10

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRFR/U3707Z
60
Limited By Package

50
ID, Drain Current (A)

VGS(th) Gate threshold Voltage (V)

2.5

40

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30

20

10

2.0

ID = 250A
1.5

1.0

0
25

50

75

100

125

150

-75 -50 -25

175

25

50

75 100 125 150 175 200

T J , Temperature ( C )

T C , Case Temperature (C)

Fig 9. Maximum Drain Current vs.


Case Temperature

Fig 10. Threshold Voltage vs. Temperature

Thermal Response ( Z thJC )

10

D = 0.50
1

0.20
0.10
R1
R1

0.05
0.1

0.02
0.01

Ci= i/Ri
Ci= i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.01

J
1

R2
R2

R3
R3
3

Ri (C/W) i (sec)
0.823
0.000128
1.698

0.000845

0.481

0.016503

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFR/U3707Z
15V

+
V
- DD

IAS
VGS
20V

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit


V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

D.U.T

RG

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DRIVER

VDS

200

ID
3.7A
5.6A
BOTTOM 12A

180

TOP
160
140
120
100
80
60
40
20
0
25

50

75

100

125

150

175

Starting T J , Junction Temperature (C)

Fig 12c. Maximum Avalanche Energy


vs. Drain Current
LD

I AS

VDS

Fig 12b. Unclamped Inductive Waveforms


+
VDD D.U.T

Current Regulator
Same Type as D.U.T.

VGS
Pulse Width < 1s
Duty Factor < 0.1%

50K
12V

.2F
.3F

Fig 14a. Switching Time Test Circuit


D.U.T.

+
V
- DS

VDS
90%

VGS
3mA

10%
IG

ID

Current Sampling Resistors

Fig 13. Gate Charge Test Circuit

VGS
td(on)

tr

td(off)

tf

Fig 14b. Switching Time Waveforms

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IRFR/U3707Z
D.U.T

Driver Gate Drive

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P.W.

D.U.T. ISD Waveform


Reverse
Recovery
Current

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

P.W.
Period

RG

D=

VGS=10V

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

Period

VDD

+
-

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices


Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

Id
Vds
Vgs

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 16. Gate Charge Waveform

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IRFR/U3707Z
Power MOSFET Selection for Non-Isolated DC/DC Converters
Synchronous FET

Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
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MOSFET, but these conduction losses are only about
one half of the total losses.

The power loss equation for Q2 is approximated


by;
*
Ploss = Pconduction + Pdrive + Poutput

Ploss = Irms Rds(on)

Power losses in the control switch Q1 are given


by;

+ (Qg Vg f )

Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput

+ oss Vin f + (Qrr Vin f )

This can be expanded and approximated by;

*dissipated primarily in Q1.

Ploss = (Irms Rds(on ) )


2


Qgs 2
Qgd
+I
Vin f + I
Vin
ig
ig

+ (Qg Vg f )
+

Qoss
Vin f
2

This simplified loss equation includes the terms Qgs2


and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 16.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the
parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by
the power supply input buss voltage.

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.

Figure A: Qoss Characteristic

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IRFR/U3707Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)

2.38 (.094)
2.19 (.086)

6.73 (.265)
6.35 (.250)

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1.14 (.045)
0.89 (.035)

-A1.27 (.050)
0.88 (.035)

5.46 (.215)
5.21 (.205)

0.58 (.023)
0.46 (.018)

4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)

10.42 (.410)
9.40 (.370)

LEAD ASSIGNMENTS
1 - GATE

3
0.51 (.020)
MIN.

-B1.52 (.060)
1.15 (.045)
3X
2X

1.14 (.045)
0.76 (.030)

0.89 (.035)
0.64 (.025)
0.25 (.010)

2 - DRAIN
3 - SOURCE
4 - DRAIN

0.58 (.023)
0.46 (.018)

M A M B

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2.28 (.090)
4.57 (.180)

2 CONTROLLING DIMENSION : INCH.


3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).

D-Pak (TO-252AA) Part Marking Information

Notes: T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 9U1P

INT ERNAT IONAL


RECTIFIER
LOGO

IRFU120
9U

016
1P

DAT E CODE
YEAR = 0
WEEK = 16

AS S EMBLY
LOT CODE

Notes : T his part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"

INT ERNAT IONAL


RECT IFIER
LOGO

IRFU120
12

AS S EMBLY
LOT CODE

www.irf.com

PART NUMBER

916A
34

DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A

IRFR/U3707Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)

2.38 (.094)
2.19 (.086)

-A-

0.58 (.023)
0.46 (.018)

1.27 (.050)
0.88 (.035)

5.46 (.215)
5.21 (.205)

LEAD ASSIGNMENTS

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1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN

6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)

1.52 (.060)
1.15 (.045)
1

-B-

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.

2.28 (.090)
1.91 (.075)

3X

9.65 (.380)
8.89 (.350)

1.14 (.045)
0.76 (.030)

2.28 (.090)

3X

2 CONTROLLING DIMENSION : INCH.


3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)
0.89 (.035)

0.89 (.035)
0.64 (.025)

0.25 (.010)

M A M B

2X

0.58 (.023)
0.46 (.018)

I-Pak (TO-251AA) Part Marking Information


Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 9U1P

INTERNATIONAL
RECT IFIER
LOGO

IRFU120
016
9U
1P

DAT E CODE
YEAR = 0
WEEK = 16

AS S EMBLY
LOT CODE

Notes : T his part marking information applies to devices produced after 02/26/2001
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
IN T HE AS S EMBLY LINE "A"

INT ERNAT IONAL


RECT IFIER
LOGO

IRFU120
919A
56

AS S EMBLY
LOT CODE

10

PART NUMBER

78

DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A

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IRFR/U3707Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR

TRR

16.3 ( .641 )
15.7 ( .619 )

TRL

16.3 ( .641 )
15.7 ( .619 )

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12.1 ( .476 )
11.9 ( .469 )

FEED DIRECTION

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.

Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 0.58mH, RG = 25,
IAS = 12A.
Pulse width 400s; duty cycle 2%.

Calculated continuous current based on maximum allowable


junction temperature. Package limitation current is 30A.

When mounted on 1" square PCB (FR-4 or G-10 Material).


For recommended footprint and soldering techniques refer to
application note #AN-994.

Data and specifications subject to change without notice.


This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/03

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11

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/