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4N35, 4N36, 4N37

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection
FEATURES
A

1

6 B

C

2

5 C

NC

3

4 E

• Isolation test voltage 5000 VRMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

21842

APPLICATIONS
• AC mains detection

i179004-5

• Reed relay driving

DESCRIPTION

• Switch mode power supply feedback

Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.

• Telephone ring detection

AGENCY APPROVALS

• Logic coupling with high frequency noise rejection

• Logic ground isolation

• Underwriters laboratory file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
• FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156

ORDER INFORMATION
PART

REMARKS

4N35

CTR > 100 %, DIP-6

4N36

CTR > 100 %, DIP-6

4N37

CTR > 100 %, DIP-6

ABSOLUTE MAXIMUM RATINGS
PARAMETER

(1)

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT
Reverse voltage

VR

6

V

Forward current

IF

50

mA

t ≤ 10 μs

Surge current

IFSM

1

A

Pdiss

70

mW

Collector emitter breakdown voltage

VCEO

70

V

Emitter base breakdown voltage

VEBO

7

V

IC

50

mA

IC

100

mA

Pdiss

70

mW

VISO

Power dissipation
OUTPUT

Collector current

t ≤ 1 ms

Power dissipation
COUPLER
Isolation test voltage

5000

VRMS

Creepage

≥7

mm

Clearance

≥7

mm

≥ 0.4

mm

Isolation thickness between emitter
and detector

Document Number: 81181
Rev. 1.2, 07-Jan-10

For technical questions, contact: optocoupleranswers@vishay.com

www.vishay.com
153

Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document.55 to + 150 °C Operating temperature Tamb .1 VR = 0 V. IF = 0 4N37 ICEO 5 50 nA 4N35 ICEO 500 μA VCE = 30 V. www.5 mm 175 Ω Notes (1) T amb = 25 °C. (2) Refer to wave profile for soldering condditions for through hole devices (DIP). IF = 0. unless otherwise specified. contact: optocoupleranswers@vishay.vishay.com Document Number: 81181 Rev. unless otherwise specified. Minimum and maximum values are testing requirements. (2) Indicates JEDEC registered value. Tamb = .4N35. Tamb = 100 °C RIO 1011 Ω Storage temperature Tstg .9 VR = 6 V IR 0.2. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. 07-Jan-10 .55 to + 100 °C Junction temperature Tj 100 °C Tsld 260 °C COUPLER Comparative tracking index Isolation resistance Soldering temperature (2) DIN IEC 112/VDE 0303. 4N37 Vishay Semiconductors Optocoupler. UNIT INPUT Junction capacitance Forward voltage (2) Reverse current (2) Capacitance VR = 0 V. Typical values are for information only and are not part of the testing requirements. ELECTRICAL CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN.7 V 10 μA 0.3 1. 4N36. IF = 0 Collector emitter leakage current (2) Collector emitter capacitance V 4N36 ICEO 5 50 nA VCE = 10 V. Tamb = 100 °C 4N36 ICEO 500 μA 4N37 ICEO 500 μA VCE = 0 CCE 6 pF 0.55 °C VF 1. IB = 1 μA VCE = 10 V.5 V IF = 10 mA.com 154 For technical questions. with Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT VIO = 500 V. input output f = 1 MHz CIO Ω 1011 Notes (1) T amb = 25 °C.10 s dip soldering: distance to seating plane ≥ 1. Tamb = 25 °C RIO 1012 VIO = 500 V. MAX. Phototransistor Output. 1. TYP. f = 1 MHz CO 25 pF pF OUTPUT Collector emitter breakdown voltage(2) Emitter collector breakdown voltage(2) IC = 1 mA 4N35 BVCEO 30 V 4N36 BVCEO 30 V 4N37 BVCEO 30 V BVECO 7 V 4N35 BVCBO 70 V 4N36 BVCBO 70 V 4N37 BVCBO 70 4N35 ICEO 5 50 nA IE = 100 μA OUTPUT Collector base breakdown voltage (2) IC = 100 μA. f = 1 MHz Cj 50 IF = 10 mA VF 1. part 1 max. input output (2) VIO = 500 V RIO Capacitance. Typical values are characteristics of the device and are the result of engineering evaluation.3 1.6 pF COUPLER Resistance.

TA = 25 °C CTRCE(sat) = 0. LED Current Normalized to: VCE = 10 V. Phototransistor Output. toff VCE = 10 V.Forward Voltage vs.5 NCTR(SAT) Fig.0 i4n25_02 1 10 100 IF . TYP.LED Current (mA) Fig.2.0 0.LED Current (mA) Fig.3 NCTR . 3 . IF = 10 mA.4 0.0 0.2 TA = 25 °C 1.0 100 IF .55 °C 1. contact: optocoupleranswers@vishay.com 155 .1 i4n25_04 1 10 100 IF . IF = 10 mA.Normalized Non-Saturated and Saturated CTR vs.4 V 1.Forward Current (mA) i4n25_01 Normalized to: VCE = 10 V.LED Current (mA) i4n25_03 Fig. Vishay Semiconductors with Base Connection CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN 4N35 CTRDC 100 % 4N36 CTRDC 100 % 4N37 CTRDC 100 4N35 CTRDC 40 50 % 4N36 CTRDC 40 50 % 4N37 CTRDC 40 50 % TEST CONDITION SYMBOL MIN. LED Current For technical questions. TA = .Normalized Non-Saturated and Saturated CTR vs.1 NCTR .vishay. MAX UNIT % Note (1) Indicates JEDEC registered values. IF = 10 mA. 4N36.5 1.0 0. 10 UNIT μs Note (1) Indicates JEDEC registered values. IC = 2 mA. LED Current Document Number: 81181 Rev. Forward Current 1. 1.9 TA = 85 °C 0. IF = 10 mA DC current transfer ratio (1) VCE = 10 V.Normalized CTR VF -Forward Voltage (V) 1.Normalized CTR TA = . 07-Jan-10 100 1.4 V 0. 1 . 4N37 Optocoupler. IF = 10 mA.7 0. RL = 100 Ω ton.Normalized Non-Saturated and Saturated CTR vs. TA = 25 °C CTRCE(sat) VCE = 0.5 NCTR(SAT) NCTR NCTR 0.0 TA = 70 °C 0.5 Normalized to: VCE = 10 V. TA = 25 °C CTRCE(sat) VCE = 0. SWITCHING CHARACTERISTICS PARAMETER Switching time (1) MAX.5 NCTR(SAT) NCTR 0. unless otherwise specied 1.8 1 10 NCTR .0 TA = 25 °C 0.Normalized CTR TA = 50 °C 0.5 1. 4 .55 °C to + 100 °C TYP. TYPICAL CHARACTERISTICS Tamb = 25 °C.com www. VCC = 10 V.4 V 0 10 IF .1 1 1.1 1.4N35. 2 .

Collector Emitter (nA) 0.20 °C Nib. 07-Jan-10 .Normalized CTRcb vs. LED Current 10 1.2 .8 Normalized to: IB = 20 µA.Collector Current (mA) 25 °C 50 °C 70 °C Fig. TA = .LED Current (mA) 10 30 25 50 °C 20 70 °C 15 85 °C 25 °C 10 5 Normalized Photocurrent ICE . TA = 25 °C 103 102 VCE = 10 V 101 Typical 100 10. TA = 50 °C Nib.LED Current (mA) i4n25_06 Normalized to: IF = 10 mA.01 0.1 0.Normalized Non-Saturated and Saturated CTR vs.1 10. Temperature www. IF = 10 mA.0 0.1 Nib.vishay. 10 .0 1 i4n25_10 10 100 1000 Ib . contact: optocoupleranswers@vishay. 4N37 Vishay Semiconductors Optocoupler. TA = 20 °C Nib.com Document Number: 81181 Rev.LED Current (mA) i4n25_05 1 10 100 IF .5 i4n25_08 Fig.Collector Emitter Current vs.4 0 20 40 60 80 100 Tamb. LED Current and Temperature 35 0 10 20 30 40 50 60 1 0.5 NCTR(SAT) NCTR 1 10 100 IF .Normalized CTRcb NCTR . Phototransistor Output. with Base Connection 1. TA = 25 °C CTRCE(sat) VCE = 0.Normalized hFE ICEO . 1. TA = 70 °C i4n25_09 IF . 5 .Normalized CTR 1. TA = 25 °C 0.5 1. TA = 25 °C 0. VCE = 10 V.com 156 1.4 V NCTRcb . Base Current and Temperature For technical questions.Collector Emitter Leakage Current vs. 7 . 6 .5 Normalized to: VCE = 10 V. Temperature and LED Current 1 10 100 IF . IF = 10 mA. 4N36. IF and Temperature 105 1.3 V.Normalized Photocurrent vs.20 i4n25_07 25 °C .LED Current (mA) Fig.0 TA = 85 °C 0.4N35.2.2 70 °C 4 NhFE .1 Normalized to: VCB = 9.Ambient Temperature (°C) Fig. 8 .0 0.20 °C 0.0 0.6 0.1 0 Fig.Normalized Non-Saturated hFE vs.Base Current (µA) Fig. 9 .

5 Normalized to: VCE = 10 V.5 V i4n25_12 Fig. Ib = 20 µA TA = 25 °C 70 °C 50 °C VCC = 5 V 1. 13 . Vishay Semiconductors with Base Connection 1. Collector Load Resistor IF tD tR VO tPLH VTH = 1.Normalized hFE vs.0 1 10 100 1000 Ib .Base Current (µA) i4n25_11 i4n25_14 Fig. 1.4N35.4 V 0.5 V tPHL tS tF i4n25_13 Fig.vishay. 4N36.0 100 1.0 100 10 RL .2.20 °C VO 0.Collector Load Resistor (kΩ) Fig. contact: optocoupleranswers@vishay.com 157 .5 IF = 10 mA VCE = 0. 4N37 NhFE(sat) . TA = 25 °C VCC = 5.1 1 tPHL . Phototransistor Output. 14 .Propagation Delay (µs) RL 1.Switching Schematic 2.5 1000 tPLH.com www. 07-Jan-10 For technical questions. 12 .5 10 tPLH 1 0.Propagation Delay (µs) IF = 10 mA. Vth = 1.Propagation Delay vs.0 V.Normalized Saturated hFE Optocoupler.Switching Timing Document Number: 81181 Rev. Base Current and Temperature tPHL 2.0 f = 10 kHz DF = 50 % 25 °C . 11 .

4N35.5 ± 0.5 ± 0.3 6.5 ± 0.5 ± 0. 7.62 typ.3 0.15 4.1 14771_2 6 5 4 1 2 3 4. with Base Connection PACKAGE DIMENSIONS in millimeters 7.5 ± 0.25 7.1 2. 07-Jan-10 . 4N37 Vishay Semiconductors Optocoupler.2.3 1.3 0.vishay.2 ± 0.12 ± 0.5 typ. PACKAGE MARKING 4N35 V YWW 24 21764-24 www.62 to 9. contact: optocoupleranswers@vishay.com Document Number: 81181 Rev. Phototransistor Output.3 3.8 ± 0.com 158 For technical questions. 1. 4N36.

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