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Doping by diffusion
n-type Si
SiO2
n-type Si
SiO2
n-type Si
6. Resist removal
3. Exposure
SiO2
SiO2
SiO2
n-type Si
1. Oxidation
n-type Si
n-type Si
4. Developing
Resist
SiO2
n-type Si
2 Photoresist
2.
SiO2
n-type Si
5. Etching
SiO2
7. Selective doping
SiO2
SiO2
Si:p
p
n-type Si
Si:p
SiO2
8. Metallization
Doping by diffusion
General technique for diffusion
The wafers are introduced in a furnace where an inert gas containing the
doping species is flowing
Case of Silicon: B for p type and As or P for n type:
Solid sources: BN,
As2O3, P2O5
B2H6, AsH3,
PH3
The dopant atoms diffuse into the silicon due to their high solubility and
the substrate temperature (diffusivity).
Doping by diffusion
Doping
p g from a p
powder using
g
a source furnace (solid source)
Flow meter
Universidad Politcnica de Madrid
Doping by diffusion
Doping by diffusion
Industrial furnaces for production
Horizontal furnace
Vertical furnace
Universidad Politcnica de Madrid
Doping by diffusion
Comparison
Feature
Horizontal
Vertical
Heat up speed
slower
faster
slower
faster
equal
equal
Maximum Temperature
1100C
1250C
Temperature uniformity
lower
higher
possible
not possible
Flexibility:
y Rungdifferent diameter of wafers run to run
processed
possible
not possible
St k wafer
Stock
f cassettes
tt
4" - 300mm 12
no
yes
lower
very high
>150 wafer
Power consumption
high
lower
Price
low
high
Automation level
Capacity
Diffusion Theory
In a concentration gradient, particles flow along the direction where the
particle density is lower (statistical process)
Diffusion Theory
Flux (F) : number of dopant atoms
passing through a unit area per unit
time.
The number of atoms inside the
differential volume (dV) per unit time is
expressed as:
[F( x ) F( x dx
d )] A
dV
Therefore:
dn
(A dx ) A [F( x ) F( x dx )]
dt
dn
dF
dt
dx
One dimensional
continuity equation
Universidad Politcnica de Madrid
Diffusion Theory
1st Ficks diffusion law
o
o
o
o
n
F D
x
The driving force for the atoms to diffuse is the concentration gradient
The flux is proportional to this gradient
The proportionality constant is the diffusion coeficient (D) expressed in cm2 /sec.
/sec
The atoms move (diffuse) from a high concentration region towards a lower concentration region
Ea
D D 0 exp
kT
dn
dF
d
dt
dx
d
dn
d 2n
D 2
d
dt
d
dx
2nd
d Ficks
c sd
diffusion
us o law
a
(assumes that D is independent of x)
Universidad Politcnica de Madrid
Doping by diffusion
Interstitial
Vacancy driven
Doping by diffusion
Diffusion profiles:
The final diffusion profile is obtained solving the 2nd Ficks
law taking into account the right boundary conditions.
x = depth
wafer
f
There are 2 important cases:
Diffusion
profile
Doping by diffusion
Constant surface concentration (infinite source)
Flux of doping species
Boundaryy conditions:
C(x,t) Impurity concentration into the semiconductor
Semiconductor
2
x
y2
C( x , t ) C S 1
e dy
d CS erfc
f
0
2 Dt
Concentration profile as a
function of depth (x) and time (t)
2
Total amount of impurities as a
CS D t
function of time [atomscm-2]
Q( t ) C( x , t ) dx
0
Doping by diffusion
Constant surface concentration (predeposition)
x
C ( x, t ) C S erfc
2 D t
2
Q( t ) C( x , t ) dx
d
CS D t
0
Universidad Politcnica de Madrid
Doping by diffusion
Constant total dopant (drive-in, finite source)
Dopant amount previously established by predeposition (shallow diffusion)
Semiconductor
QT C ( x, t ) dx
Cs
QT
Dt
C (
( , t ) 0
x2
QT
C( x , t )
exp
Dt
4Dt
Doping by diffusion
Constant total dopant (drive-in, finite source)
x2
QT
C( x , t )
exp
Dt
4Dt
QT
Cs
Dt
Doping by diffusion
Finite source
Infinite source
QT
or
Give temperature
temperature, time and depth
(x) and determine C/Cs value.
Then determine C, given Cs or QT
QT
Cs
Dt
or
Cs = constant
Doping by diffusion
x
erfc(x)
erfc(x)
21
2,1
0 00297947
0,00297947
0,1
0,887537084
2,2
0,00186285
0,2
0,777297411
2,3
0,00114318
0,3
0,671373241
2,4
0,00068851
04
0,4
0 571607648
0,571607648
25
2,5
0 00040695
0,00040695
0,5
0,479500124
2,6
0,00023603
0,6
0,39614391
2,7
0,00013433
0,7
0,322198807
2,8
7,5013E05
0,8
0,25789921
2,9
4,1098E05
0,9
0,203091887
2,209E05
0,157299265
3,1
1,1649E05
1,1
0,119794959
3,2
6,0258E06
1,2
0,08968604
3,3
3,0577E06
1,3
0,065992071
3,4
1,522E06
1,4
0,047714888
3,5
7,431E07
1,5
0,033894858
3,6
3,5586E07
1,6
0,02365162
3,7
1,6715E07
1,7
0,016209542
3,8
7,7004E08
1,8
0,010909499
3,9
3,4792E08
1,9
0,007209571
1,5417E08
0,004677735
4,1
6,7E09
Diffusion length
LD D t
Predeposition:
p
an example
p
Carrier concentration profile in a p-n junction.
ND = CB
Doping by diffusion
Junction depth:
CB is C bulk
CS is C at the surface
Intrinsic
Extrinsic
Intrinsic
ni < C(x,t)
Extrinsic
D/D
D/D
/Dss(T)
(T)
C/ni(T)
Extrinsic diffusion
Extrinsic diffusion
D ~ C2
Phosporous
D~C
D constant
Extrinsic diffusion
Junction depth for extrinsic diffusion
Ds t
for D ~ C (
XJ = 1.1
Ds t
for D ~ C2 (
= 2)
XJ = 0.87
Ds t
for D ~ C3 (
= 3)
XJ = 1.6
= 1)
Problems:
Isotropical diffusion
((lateral and vertical))
Affects design rules
SiO2
Doping techniques
Doping by ion implantation
300 mm
Si wafers
Deviation
R = mV/qB
Dose:
Ions/cm2
Doping by Implantation
Multi-energy implantation
Mn on ZnO
x R p 2
C ( x)
exp
2
2 p
2 p
Rp
C(Rp)
C(Rp )
0 6 C(Rp)
0.6
S
2 p
C(x)
S = dose (at/cm2)
Rp
Projected range
x = Rp p
400
dE
dE
dx
R dx
Sn ( E ) Se ( E )
S
Sn ( E ) Se ( E )
dx
0
E0
dE
0 S n ( E ) Se ( E )
snooker
k game
E0
M1
v1
v0
M2
M1
4 M 1M 2
1
2
E for = 0
M 2 v 2
2 0
2
M1 M 2
Sn ( E ) kn E
v2
for low E
M2
S e ( E ) ke E 10 (eV )
7
1/ 2
/ cm
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Sn ( E ) kn E
for low E
En
nergy Losss (ev/nm)
Coulomb interaction
S n (E )
Implantation
region
Rutherford interaction
Electronic
Stopping
Ion Energy
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E0
dE
R dx
S ( E ) Se ( E )
0
0 n
Channeling effects
Crystals have directions with low atomic density where the ions penetrate deeper.
The only stopping mechanism is the electronic interaction
How to reduce channeling:
Angle
g of incidence
Surface amorphization
Sn ( E ) kn E
for low E
Coulomb interaction
S n (E )
Implantation
region
Rutherford interaction
At high E Se dominates
dominates***
At low E Sn dominates
Crystal Damage
Crystal Damage
Masking
T = 1 0.9999
0 9999 = 10-44
Rp
We have a GaAs wafer with a diameter of 100 mm where we implant uniformly Zn ions using
an implantation
p
energy
gy of 100 KeV during
g 5 min with a constant ion current of 10
A.
Calculate the dose and the maximum concentration of ions