UNISONICTECHNOLOGIESCO.

, LTD
7N10

Power MOSFET

7 A, 1 0 0 V N-CH AN NEL
POWER MOSFET
1

SOT-223

DESCR IPT ION
The UTC 7N10 is an N-Channel enhancement mode power
MOSFET, providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10 uses planar stripe
and DMOS technology to provide perfect quality. This device can
also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10 is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.

1
TO-252

1
TO-252D

FEAT URES

1

* RDS(ON) < 0.35 @ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability

TO-251

S YMBOL

ORDER IN G IN

MAT ION

Ordering Number
Lead Free
Halogen Free
7N10G-AA3-R
7N10L-TM3-T
7N10G-TM3-T
7N10L-TN3-R
7N10G-TN3-R
7N10L-TND-R
7N10G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
SOT-223
TO-251
TO-252
TO-252D

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tape Reel
Tube
Tape Reel
Tape Reel

7N10

Power MOSFET

MARK IN G
SOT-223

TO-251 / TO-252 / TO-252D

7N10

Power MOSFET

ABSOLU TE MAX I MU M RAT IN GS (TA =25°C, unless otherwise specified)
PARAMETER
Drain -Source Voltage
Gate-Source Voltage
Continuous Drain Current

TC =25°C
TC = 70°C

SYMBOL
VDSS
VGSS
ID
ID
IDM
IAR
EAR
EAS
dv/dt

RATINGS
100
±25
7
6.8
16
7
0.2
50
6.0
2.0

UNIT
V
V
A
A
A
A
mJ
mJ
V/ns

RATINGS
62.5

UNIT

Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
SOT-223
Power Dissipation
W
TO-251/TO-252
2.5
TO-252D
PD
SOT-223
0.016
Derate above 25°C
W/°C
TO-251/TO-252
0.02
TO-252D
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =1.7A, VDD =25V, RG =25 Starting TJ =25°C
4. ISD 7.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ =25°C

T HER MAL DAT A
PARAMETER

SYMBOL
SOT-223
Junction to Ambient
TO-251/TO-252
JA
TO-252D
SOT-223
Junction to Case
TO-251/TO-252
JC
TO-252D
Note: When mounted on the minimum pad size recommended (PCB Mount)

50

°C/W

12
7.5

°C/W

7N10

Power MOSFET

ELECTR ICAL CH ARACTER IST ICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current

SYMBOL

TEST CONDITIONS

BVDSS
VGS =0V, ID =250µA
BVDSS/ TJ Reference to 25°C, ID =250µA
VDS =100V, VGS =0V
IDSS
VDS =80V, TC =125°C
IGSS
VGS =±25V, VDS =0V

Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V, ID =3.5A
Forward Transconductance
gFS
VDS =40V, ID =0.85A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS =25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate Source Charge
QGS
(Note 1,2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=0.5A, RG=25
(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS =7A, VGS =0V
Reverse Recovery Time
trr
VGS=0V, IS=7.3A,
diF/dt=100A/µs
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature

MIN TYP MAX UNIT
100
0.1

2.0

V
V/°C
1
µA
10
µA
±100 nA

4.0
0.144 0.35
1.85
380
70
11
14.3
4.2
3.2
30
40
80
35

70
150

V
S

450
85
15

pF
pF
pF

38
50
90
40

nC
nC
nC
ns
ns
ns
ns

7

A

16

A

1.5

V
ns
nC

7N10

Power MOSFET

TEST C IRCU ITS AND WAVEFOR MS
Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

VDS

RG

L
-

ISD
VGS
VDD

Driver
Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

VGS
(Driver)

D=

Gate Pulse Width
Gate Pulse Period

10V

IFM, Body Diode Forward Current
ISD
(DUT)

di/dt
IRM
Body Diode Reverse Current

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

Body Diode Forward
Voltage Drop

VDD

7N10

Power MOSFET

TEST C IRCU ITS AND WAVEFOR MS (Con t.)

VGS
Same Type
as DUT
QG

12V

10V

200nF
50k

VDS

300nF

QGS

QGD

VGS
DUT
3mA
Charge
Gate Charge Test Circuit

Gate Charge Waveforms

Resistive Switching Test Circuit

Res tive Switching Wavefo

2
EAS= 1
2 LIAS

VDS
RG

s

BVDSS
BVDSS-VDD

BVDSS

ID
L

IAS

10V

ID(t)
tP

DUT

VDD

VDD

VDS(t)

tP

Unclamped Inductive Switching Test Circuit

Time

Unclamped Inductive Switching Waveforms

7N10

Power MOSFET

Drain Current, ID (µA)

Drain Current, ID (µA)

T YP ICAL CH ARACTER IST ICS

Drain-Source On-State Resista
Characteristics

e

7N10 SOA Chart (TO-252, TC=25°C)

4
VGS=10V, ID=3.5A

3

Drain Current, ID (A)

Drain Current, ID (A)

3.5

2.5
2
1.5
1

10

100us
1
1ms
10ms

0.5
0
0

0.2
0.4
0.6
0.8
Drain to Source Voltage, VDS (V)

0.1
0.1

100ms
DC,1s
1

10

100

Drain to Source Voltage, VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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