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FDD5N50

N-Channel UniFETTM II MOSFET
500 V, 4 A, 1.4 
Features

Description

• RDS(on) = 1.15  (Typ.) @ VGS = 10 V, ID = 2 A

UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.

• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant

Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D

D

G

G
S

D-PAK
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

ID

Drain Current

FDD5N50
500

Unit
V

±30

V

- Continuous (TC = 25oC)

4

- Continuous (TC = 100oC)

2.4

- Pulsed

A

IDM

Drain Current

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

(Note 1)

4

A

EAR

Repetitive Avalanche Energy

(Note 1)

4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

16

A

(Note 2)

256

mJ

(TC = 25oC)

40

W

- Derate above 25oC

0.3

W/oC

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

TL

(Note 1)

-55 to +150

o

C

300

o

C

Thermal Characteristics
Symbol

Parameter

FDD5N50

RJC

Thermal Resistance, Junction to Case, Max.

1.4

RJA

Thermal Resistance, Junction to Ambient, Max.

110

©2008 Fairchild Semiconductor Corporation
FDD5N50 Rev. C0

1

Unit
o

C/W

www.fairchildsemi.com

FDD5N50 N-Channel UniFETTM II MOSFET

April 2013

8 - C Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 32mH. Referenced to 25oC - 0. C0 2 www.15 1. ID = 5A RG = 25 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 16 A VSD Drain to Source Diode Forward Voltage VGS = 0V. ID = 5A VGS = 10V (Note 4) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V.3 - S VDS = 25V. VGS = 0V - - 1 VDS = 400V. Max. ID = 2A - 4. VDD = 50V. ID = 250A 3. TJ = 25oC 500 - - V ID = 250A. ISD = 4A - - 1. ID = 2A - 1. TC = 125oC - - 10 A IGSS Gate to Body Leakage Current VGS = ±30V. RG = 25. Starting TJ = 25°C 3: ISD 4A. VDD BVDSS. VGS = 0V f = 1MHz - 480 640 pF - 66 88 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V.0 - 5. VGS = 0V.4  gFS Forward Transconductance VDS = 20V. ISD = 5A dIF/dt = 100A/s - 1.com FDD5N50 N-Channel UniFETTM II MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted .Device Marking FDD5N50 Device FDD5N50TM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 FDD5N50 FDD5N50TM_WS D-PAK 380mm 16mm 2500 FDD5N50 FDD5N50TF D-PAK 380mm 16mm 2000 Electrical Characteristics Symbol Parameter Test Conditions Min.fairchildsemi. di/dt 200A/s. Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev.0 V Static Drain to Source On Resistance VGS = 10V. IAS = 4A.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge VGS = 0V. Typ. Unit Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250A. VDS = 0V - - ±100 nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS.

Body Diode Forward Voltage [V] Figure 6.0 V 5. VDS = 20V 2.0V 10. Gate Charge Characteristics VGS.04 0. VGS = 0V o *Note: TJ = 25 C 1.Drain-Source Voltage[V] 0.5 o 150 C 10 o 25 C *Notes: 1. Reverse Drain Current [A] 70 2.4 12 Figure 5.0 VGS = 20V 1. On-Resistance Variation vs.1 *Notes: 1. Gate-Source Voltage [V] 1000 Capacitances [pF] 8 Figure 4.Figure 1.0 V 7.2 VSD.1 30 4 Figure 3. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.5 V 6.com FDD5N50 N-Channel UniFETTM II MOSFET Typical Performance Characteristics .0 V 6. On-Region Characteristics 20 20 VGS = 15. Drain-Source On-Resistance 5 6 7 VGS. Source Current and Temperature 3. Body Diode Forward Voltage Variation vs. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1.5 V 10 ID.0V 8.5 VGS = 10V 2. Drain Current [A] 9 1 0.Gate-Source Voltage[V] *Note: 1. 250s Pulse Test 0.1 *Note: ID = 5A 0 1 10 VDS. C0 30 0 3 4 8 Qg.1 1 10 VDS.Drain Current[A] Figure 2.Drain Current[A] 10 ID. 250s Pulse Test 0.6 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 750 2. TC = 25 C 0. Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev. Drain Current and Gate Voltage IS. Total Gate Charge [nC] 12 www.fairchildsemi.0 RDS(ON) []. 250s Pulse Test o 2.8 1.0 0 3 6 ID. VGS = 0V 2. Capacitance Characteristics Ciss 1.

2 1. Drain Current [A] *Notes: 1.0 1.TC = PDM * ZJC(t) 0. [Normalized] Drain-Source On-Resistance BVDSS.5 2.02 o 1. Temperature Figure 8.0 -75 175 Figure 9.fairchildsemi. [Normalized] Drain-Source Breakdown Voltage 1.1 0.8 -75 -25 25 75 125 o TJ. D= t1/t2 3.2 PDM 0. Duty Factor. Drain Current [A] ID.0 0.4 C/W Max. 2. TC = 25 C o 2. Maximum Safe Operating Area -25 25 75 125 o TJ. Junction Temperature [ C] 2. ID = 250A 0.0 0.9 *Notes: 1.05 *Notes: 0.5 1. Case Temperature [ C] 150 Figure 11.1 *Notes: 3 2 1 o 1. VGS = 0V 2. Breakdown Voltage Variation vs. Temperature 3. Transient Thermal Response Curve Thermal Response [ZJC] 3 1 0.5 0.5 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0. ZJC(t) = 1. Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC. VGS = 10V 2. TJ = 150 C 3. TJM .01 1 10 100 VDS. Single Pulse 0. Case Temperature 4. Maximum Drain Current vs.01 Single pulse 0. C0 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www. On-Resistance Variation vs. Junction Temperature [ C] 175 Figure 10.Figure 7.com FDD5N50 N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) .1 1.0 RDS(on).01 -5 10 ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev. ID = 2A 0.5 30 30s 10 4 100s ID.1 t1 t2 0.

fairchildsemi.com . C0 5 www.FDD5N50 N-Channel UniFETTM II MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev.

fairchildsemi. Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev.com . C0 6 www.FDD5N50 N-Channel UniFETTM II MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM .

com .fairchildsemi.FDD5N50 N-Channel UniFETTM II MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor Corporation FDD5N50 Rev. C0 7 www.

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