0 views

Uploaded by Habib Firdaus

hahahahahaha asodpaskdposa

- 741opamp
- Automatic Speed Control for Fans and Coolers
- Experiment 3 for B.electronic
- A High Performance CMOS Band – Gap Reference Circuit Design
- AD734wwww
- Amplifier AC Design Problem
- Transistor Amplifier
- Diode Circuits
- 3C25 Solid State Physics old notes 6 of 11 (UCL)
- Capacitance of Forward Biased Diode
- Differential Amplifier
- sem
- GBPPR 'Zine - Issue #89
- Feedback
- DESIGN OF LOW POWER OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR BIOMEDICAL APPLICATIONS
- Op Amp
- Microsoft PowerPoint - 1. CHAPTER_1 [Compatibility Mode]
- BJT
- TDA7293V
- 3_Transistors.pdf

You are on page 1of 49

Faculty of Engineering

AMPLIFIERS

Linear Signal

Amplification:

the slope

v0 (t ) Avi (t )

Distortion changes

waveform as in figure

perfectly linear,

distortion due to

clipping

for output saturation.

1

NONLINEARITY

Most

amplifiers are

only linear in a narrow

range of operation

For

circuit with a dc

voltage, labeled Q,

the quiescent point.

considerable nonlinearity.

2

Magnitude Response

Phase Response

Fig. (a) Magnitude and (b) phase response of STC networks of the lowpass type.

4

RESPONSE

Magnitude Response

RESPONSE

Phase response

Fig. (a) Magnitude and (b) phase response of STC networks of the

high-pass type.

6

OP-AMP

Dual

in Line Packaging(DIP)

OP-AMP PACKAGING

Pinouts

OP-AMP CIRCUITRY

The

circuitry

OP-AMPS

Common

10

The

dependent sources

11

FIND CURRENTS

Invert

12

Difference

amplifier

Use

Kirchoffs

Current Law

Use

Superposition

13

R2

R2

R2 R1

vO 1 v v1 1 v v1

R1

R1 R2

R1

i 0 v

R4

R4

v2 v

v2

R3 R4

R3 R4

14

R2

v1

Ri

v

R1

RO

vO

A( v v )

15

COMPLETE EQUIVALENT

FOR MESH ANALYSIS

INPUT RESISTANCE

Rin

v1

i1

GAIN

vO

vi

vO

MESH 1

MESH 2

vO R2 i2 R1 (i1 i2 )

R1

( R1 R2 )

i1 v1

AR R ( R R R ) i 0

i

1

1

2

O 2

i1

R1 R2 RO

v1

i2

( ARi R1 )

16

Fig. (a) Unity-gain follower. (b) Input step waveform. (c) Linearly rising output

waveform obtained when the amplifier is slew-rate limited. (d) Exponentially

rising output waveform obtained when V is sufficiently small so that the initial

slope (wtV) is smaller then or equal to SR.

17

Effect of slew-rate

limits output for

sinusoidal waveforms.

dv0

SR

dt

max

dvi

Vi cost Vi

dt

18

BASIC SEMICONDUCTORS

Diode

Structure

Symbol

19

DIODES

Fig. The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c)

equivalent circuit in the reverse direction; (d) equivalent circuit in the

forward direction.

20

DIODE CIRCUITS

allow current to pass through

and output voltage is positive

Fig. (a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when (d)

Equivalent circuit when v1 > 0 (e) Output waveform.

21

DIODE CHARACTERIZATION

i I s ev / nVT 1

response to voltage

operation

Forward Bias

Reverse Bias

i I s ev / nVT 1

Breakdown

i I s

Fig. The i-v characteristic of a

silicon junction diode.

22

DIODE REGIONS

Diodes

have negligible

current when biased in

reverse direction

Diodes

in the forward direction

expanded and others compressed in order to reveal

details.

23

PHYSICAL STRUCTURE ON PN

JUNCTION

We

physics by modeling it

as a 2D PN junction

junction diode.

24

Knee

less than Zener voltage.

25

We

can simplify

Diode physics by

modeling it as a 2D

PN junction

PN

junction:P and N

regions by different

dopings: n p ni

Diffusion

& Drift

the junction diode.

26

REVERSE-BIAS PN JUNCTION

The pn junction excited by a constant-current source I in the

reverse direction. To avoid breakdown, I is kept smaller than

Is. Note that the depletion layer widens and the barrier

voltage increases by Vr volts, which appears between the

terminals as a reverse voltage.

Reverse

Bias:

of voltage,

IS ID I

27

excited by a constantcurrent source supplying

a current I in the

forward direction:

The depletion layer

narrows and the barrier

voltage decreases by V

volts, which appears as

an external voltage in

the forward direction.

28

assumed that the p region is more heavily doped than the n region;

29

MODELING

Approximate

the

diode forward

characteristic with

two straight lines.

Fig. 3.20

30

APPROXIMATION

Diode

Is nonlinear

characteristic and its equivalent circuit representation.

31

Development

of

the constantvoltage-drop

model of the

diode forward

characteristics.

vertical straight

line B is used to

approximate the

fast-rising

exponential

model of the diode forward characteristics. A

vertical straight line B is used to approximate the

fast-rising exponential.

32

characteristic and its equivalent circuit representation.

33

34

Fig. Equivalent circuit model for the diode for small changes around

bias point Q. The incremental resistance rd is the inverse of the slope

of the tangent at Q, and VD0 is the intercept of the tangent on the VD

axis.

35

Fig. The analysis of the circuit in (a), which contains both dc and signal

quantities, can be performed by replacing the diode with the model shown in

(b). This allows separating the dc analysis [the circuit in (c)] from the signal

analysis [the circuit in (d)].

36

37

breakdown region shown in some detail.

38

39

40

Fig. (a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the

diode replaced with its battery-plus-resistance model. (c) transfer characteristic of the

rectifier circuit. (d) Input and output waveforms, assuming that rD || R.

41

winding. (a) Circuit. (b) Transfer characteristic assuming a constant-voltagedrop model for the diodes. (c) Input and output waveforms.

42

Fig. The bridge rectifier: (a) circuit and (b) input and output

waveforms.

43

Fig. Voltage and current waveforms in the peak rectifier circuit with

CR at T. The diode is assumed ideal.

44

45

46

BJT - DC Biasing

Transistor magical device that can rise the

level of the applied input

without the assistance of an

external energy source

FACT:

Output ac power level is the result of a transfer of

energy from the applied dc supplies

two components: DC portion, AC portion

47

BJT - DC Biasing

Once the desired DC current and voltage levels have

been defined, a network must be constructed that will

establish the desired operating point.

These basic relationships are needed for analysis

48

- 741opampUploaded byTuan Vo
- Automatic Speed Control for Fans and CoolersUploaded byPrudhvi Raj
- Experiment 3 for B.electronicUploaded byUmmu Umar Wa Aisyah
- A High Performance CMOS Band – Gap Reference Circuit DesignUploaded byKhaja Mujeebuddin Quadry
- AD734wwwwUploaded byMoroni Villalobos
- Amplifier AC Design ProblemUploaded byjazbo8
- Transistor AmplifierUploaded bySyieda Zamry
- Diode CircuitsUploaded byRahul Roy
- 3C25 Solid State Physics old notes 6 of 11 (UCL)Uploaded byucaptd3
- Capacitance of Forward Biased DiodeUploaded byz3r0r35
- Differential AmplifierUploaded byilg1
- semUploaded byapi-19822723
- GBPPR 'Zine - Issue #89Uploaded byGBPPR
- FeedbackUploaded byVIJAYPUTRA
- DESIGN OF LOW POWER OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FOR BIOMEDICAL APPLICATIONSUploaded byijaceee
- Op AmpUploaded byAhme Beat
- Microsoft PowerPoint - 1. CHAPTER_1 [Compatibility Mode]Uploaded bySaurabh Pandey
- BJTUploaded byShuhail Basheer
- TDA7293VUploaded bydragon-red0816
- 3_Transistors.pdfUploaded byRenzo
- EAadhaar_xxxxxxxx3213_15022019205315_384028Uploaded bylove life
- lm348Uploaded byJohn Helver Pacheco Palacin
- AD8638_8639Uploaded byJavier Lasobras
- Analog Circuits and DesignUploaded bylalitkumar bannagare
- D5954Uploaded byrdbasses
- 3-1 SYLLABUSUploaded bysrikanth
- NCP6151_ NCP6151A_ DR.PDFUploaded byManoj Yadav
- labUploaded byravi855885
- ECE202_L2Uploaded bynehal hasnain refath
- Bhel PaperUploaded byAnkit Srivastava

- Formulae powerUploaded byHabib Firdaus
- poWersystem exerciseUploaded byHabib Firdaus
- IM4D5B1-01E_121_1Uploaded byHabib Firdaus
- KE36303 CS-26Nov2015-lect8Uploaded byHabib Firdaus
- KE36303 CS-8Sept2015-lect5.pdfUploaded byHabib Firdaus
- Furie TransformUploaded byKamelya Gül
- intro lab2&3.docxUploaded byHabib Firdaus
- rusaUploaded byHabib Firdaus
- blaladsdUploaded byHabib Firdaus

- Important Formula.pdfUploaded bySarvjot Singh
- EDC Lab ManualUploaded byKumar Goud
- lp2985-33Uploaded bySteve Hy
- Chapter 13Uploaded byEj
- AIIMS Full Paper 2006 BY ANURAG TYAGI CLASSESUploaded byANURAG TYAGI CLASSES
- Conclusion 4aUploaded bymuhammad muiz
- GE6162 EPL Lab Manual - Electronics - CopyUploaded byDhamu Dharan
- Previous PaperUploaded byAnonymous sENwj8nwq
- Diode CharacteristicsUploaded bymercredd
- Biotechnology Engineering SYLLABUS.pdfUploaded bybikash
- PSG ECE Syllabus CopyUploaded byNithesh Chakravarthi Nekkanti
- Eee 2002 Lecture NotesUploaded bySrirevathi Balapattabi
- Low Temperature SensorUploaded byHemanth Kamesh
- AC DC Electronics Laboratory Manual EM 8656Uploaded byOvais Tariq Mughal
- 210-Exp1Uploaded byপুরব রঞ্জন
- chap02Uploaded byอภิฌาน กาญจนวาปสถิตย์
- Ec251 Ed LabUploaded byravic_ciet
- PresentationUploaded byAdmirable Vishal
- EC2004Uploaded byneo12345678
- Canon Cmos WpUploaded bysunke2009
- SemiconductorUploaded byManish Mishra
- MESFET.pdfUploaded bysrinath
- BEL Probationary Engineer: Model Paper 2Uploaded byShivaVamsi
- Introduction of BJTUploaded bymishrakkr
- Chapter 4Uploaded byFazal Mcpherson
- Unit I Power Semiconductor DevicesUploaded byAshwin Raghavan
- Electrical 3rd 4thSem 2010 11Uploaded byNitish Singh
- AV CHUYEN NGANHUploaded byHoangdinh Lim
- MOSFET- NPTELUploaded byAnshuman Mitra
- Sedra Micro Electronic Circuits DiodesUploaded bydidemt13