11E001

ADVANCED POWER SEMICONDUCTOR DEVICES
3 0 0 3.0

Objectives
• To learn the characteristics of different types of semiconductor devices.
• To learn the applications of semiconductor devices.
• To study the need for isolation circuits
.
Program Outcomes
PO3: An ability to design solutions for complex engineering problems and design system components or
processes that meet the specified needs with appropriate consideration for the public health and
safety, cultural, societal and environmental considerations.
PO5: An ability to create, select, and apply appropriate techniques, resources, and modern engineering tools
including prediction and modeling to complex engineering activities with an understanding of the
limitations.
Course Outcomes
• The graduates will demonstrate their ability to identify, formulate and solve Electrical and
Electronics Engineering problems.
• The graduates will be able to understand and design Electrical and Electronics systems and
conduct experiments, analyze and interpret data.
• The students will apply the knowledge of semiconductor transistors like metal-oxide-semiconductor fieldeffect transistor (MOSFET).

Prerequsite

Require basic knowledge on Electron devices & Power electronics.

Unit I

Introduction

Power switching devices overview – Attributes of an ideal switch, application requirements, circuit
symbols – Power handling capability – (SOA); Device selection strategy – On-state and switching losses –
EMI due to switching – Power diodes – Types, forward and reverse characteristics, switching
characteristics – Rating.
EMI due to switching
Unit II

9 Hours
Power Transistor

BJTs – Construction, static characteristics, switching characteristics- Negative temperature coefficient and
secondary breakdown – Power Darlington - Thermal protection.
Importance of power darlington
Unit III

9 Hours
Thyristor

Thyristors – Physical and electrical principle underlying operating mode – Two transistor analogy– concept
of latching – Gate and switching characteristics –Converter grade and inverter grade and other types; series
and parallel operation – Comparison of BJT and Thyristor – Steady state and dynamic models of BJT and
Thyristor – thermal protection - Mounting types.
Two transistor analogy

9 Hours

MOSFET. Pearson Education. FCT. Comparison of components Unit V 9 Hours Firing and Protecting Circuits Necessity of isolation – Pulse transformer – Opto-coupler. 3. CRC press. types. 2003. 2003. over current and gate protections. John Wiley and sons. Baliga. The power electronics handbook. Basics of GTO. Rashid. Khanchandani. Power Electronics circuits. Singapore. 5. M. 2008 References 1. New Delhi. Jayant. Power Electronics – Concepts. Fundamentals of Power Semiconductor Devices springer.Unit IV Voltage Controlled Devices Power MOSFETs and IGBTs – Principle of voltage controlled devices. Tata McGraw Hill book Co. Gate drive circuit for SCR. Undeland and Robins. . M. Devices and Applications. IGBTs and base driving for power BJT – Overvoltage. B. New Delhi. H. Need for protection 9 Hours Total: 45 Hours Textbook 1. D. B. RCT and IGCT. applications and design. 2009. Design of snubbers. 4. Bose. New Delhi. Bimal K. 2008. Modern Power electronics and AC drives. Singh and K. static and switching characteristics – Steady state and dynamic models of MOSFET and IGBTs. Timothy L. construction. Asia Ltd. New Delhi.Skvarenina. Power Electronics. 2000. Ned Mohan. 2. MCT. Prentice Hall of India.