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Silicon

N-Channel

Power MOSFET

CS630F A9H
General Description

200

ID

VDMOSFETs, is obtained by the self-aligned planar Technology

PD(TC=25)

30

which reduce the conduction loss, improve switching

RDS(ON)Typ

0.23

CS630F

A9H,

the

silicon

VDSS
N-channel

Enhanced

performance and enhance the avalanche energy. The transistor


can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.

Features
l Fast Switching
l Low ON Resistance(Rdson0.28)
l Low Gate Charge

(Typical Data:13nC)

l Low Reverse transfer capacitances(Typical:10pF)


l 100% Single Pulse avalanche energy Test

Applications
AutomotiveDC Motor Control and Class D Amplifier.

AbsoluteTc= 25 unless otherwise specified


Symbol

Parameter

VDSS

Drain-to-Source Voltage

Rating

Units

200

5.5

36

Gate-to-Source Voltage

30

Single Pulse Avalanche Energy

460

mJ

Avalanche Energy ,Repetitive

50

mJ

Avalanche Current

3.2

Peak Diode Recovery dv/dt

5.0

V/ns

Power Dissipation

30

0.24

W/

15055 to 150

300

Continuous Drain Current

ID
IDM

Continuous Drain Current T C = 100 C


a1

Pulsed Drain Current

VGS
a2

EAS
EAR
IAR

a1

a1

dv/dt

a3

PD

Derating Factor above 25C

TJT stg

Operating Junction and Storage Temperature Range

TL

Maximum Temperature for Soldering

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CS630F A9H

Electrical CharacteristicsTc= 25 unless otherwise specified


OFF Characteristics
Symbol

Parameter

Test Conditions

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID =250A

BVDSS/T J

Bvdss Temperature Coefficient

ID=250uA,Reference25

Drain to Source Leakage Current

VDS = 200V, V GS= 0V,


Ta = 25
VDS =160V, V GS= 0V,

IDSS

Rating

Units

Min.

Typ.

Max.

200

--

--

--

0.21

--

V/

--

--

Ta = 125

--

--

10

IGSS(F)

Gate to Source Forward Leakage

VGS =+30V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS =-30V

--

--

-100

nA

ON Characteristics
Symbol

Parameter

Test Conditions

R DS(ON)

Drain-to-Source On-Resistance

VGS=10V,ID =5.4A

VGS(TH)

Gate Threshold Voltage

VDS = V GS , ID = 250A

Rating

Units

Min.

Typ.

Max.

--

0.23

0.28

4.0

2.0

Pulse width tp300s,2%


Dynamic Characteristics
Symbol

Parameter

Test Conditions

g fs

Forward Trans conductance

VDS=25V, ID =5.4A

C iss

Input Capacitance

C oss

Output Capacitance

C rss

Reverse Transfer Capacitance

VGS = 0V V DS = 25V
f = 1.0MHz

Rating
Min.

Typ.

Max.

--

9.5

--

--

600

--

--

90

--

--

10

--

Units
S
pF

Resistive Switching Characteristics


Symbol

Parameter

td(ON)

Turn-on Delay Time

tr

Rise Time

td(OFF)

Turn-Off Delay Time

tf

Fall Time

Qg

Total Gate Charge

Qgs

Gate to Source Charge

Qgd

Gate to Drain (Miller)Charge

Test Conditions

ID =9A
VDD = 100V
VGS = 10V RG =12

ID =9A V DD =100V
VGS = 10V

W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

Rating
Min.

Typ.

Max.

--

10

--

--

21

--

--

24

--

--

17

--

--

13

--

--

--

4.5

--

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Units

ns

nC

CS630F A9H

Source-Drain Diode Characteristics


Symbol

Parameter

IS

Test Conditions

Rating

Units

Min.

Typ.

Max.

Continuous Source Current (Body Diode)

--

--

ISM

Maximum Pulsed Current (Body Diode)

--

--

36

VSD

Diode Forward Voltage

IS =9A,V GS =0V

--

--

1.5

trr

Reverse Recovery Time

IS =9A,Tj = 25C

--

120

ns

Reverse Recovery Charge

dIF /dt=100A/us,
V GS=0V

--

495

nC

Qrr

Pulse width tp300s,2%


Symbol

Parameter

Typ.

R JC

Junction-to-Case

4.17

/W

R JA

Junction-to-Ambient

100

/W

Units

a1

Repetitive rating; pulse width limited by maximum junction temperature


L=10.0mH, ID=9.6A, Start T J =25
a3
ISD =9A,di/dt 100A/us,VDDBVDS, Start T J=25
a2

W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

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CS630F A9H

Characteristics Curve

PD , Power Dissipation Watts

40

30

20

10

0
0

25

50

75

100

125

150

TC, Case Temperature , C

W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

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W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

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W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

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CS630F A9H

Test Circuit and Waveform

W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .

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CS630F A9H

Package Information

Items

Values(mm)
MIN

MAX

9.60

10.40

15.40

16.20

B1

8.90

9.50

4.30

4.90

C1

2.10

3.00

2.40

3.00

0.60

1.00

0.30

0.60

1.12

1.42

3.40

3.80

2.00

2.40

12.00

14.00

6.30

7.70

2.34

2.74

3.15

3.55

3.00

3.30

TO-220F Package
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CS630F A9H

The name and content of poisonous and harmful material in products


Hazardous Substance
Parts Name
Pb

0.1%

Limit

Hg

Cd

Cr(VI)

PBB

PBDE

0.1%

0.01%

0.1%

0.1%

0.1%

Lead Frame

Molding Compound

Chip

Wire Bonding

Solder

means the hazardous material is under the criterion of SJ/T11363-2006.


Note

means the hazardous material exceeds the criterion of SJ/T11363-2006.


The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroups RoHS.

Warnings
1.

2.
3.
4.

Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.


Add No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
HTU

Marketing Part

Post214061

UTH

Tel +86 0510-81805277/81805336


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E-mailsales@hj.crmicro.com

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