You are on page 1of 5

APT55M50JFLL

550V

POWER MOS 7

R

FREDFET

®

VDSS
ID

S

27

2
T-

D

G

SO

"UL Recognized"

ISOTOP ®

• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE

MAXIMUM RATINGS
Symbol

0.050Ω

S

Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg

77A

D
G
S

All Ratings: TC = 25°C unless otherwise specified.

Parameter

APT55M50JFLL

UNIT

550

Volts

Drain-Source Voltage

77

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current

VGS

Gate-Source Voltage Continuous

±30

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

694

Watts

Linear Derating Factor

5.56

W/°C

PD
TJ,TSTG

1

308

Operating and Storage Junction Temperature Range

TL

Lead Temperature: 0.063" from Case for 10 Sec.

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

EAS

Single Pulse Avalanche Energy

1

Volts

-55 to 150

°C

300
Amps

77

(Repetitive and Non-Repetitive)
1

50
4

mJ

3600

STATIC ELECTRICAL CHARACTERISTICS
MIN

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

550

RDS(on)

Drain-Source On-State Resistance

IDSS
IGSS
VGS(th)

2

(VGS = 10V, ID = 38.5A)

TYP

MAX

UNIT
Volts

0.050

Ohms

Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)

250

Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)

1000

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

nA

5

Volts

Gate Threshold Voltage (VDS = VGS, ID = 5mA)

3

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

µA
6-2004

Characteristic / Test Conditions

050-7229 Rev A

Symbol

20.20 0. RG = 5Ω 1465 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP MAX 77 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 308 (VGS = 0V.12 0. Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0. the specifications and inforation contained herein. VGS = 15V ID = 77A.1 0 t1 t2 0. APT Reserves the right to change. See figures 18. VGS = 15V 1230 ID = 77A.16 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1. IS = -77A) 1.05 10-5 10-4 °C/W 4 Starting Tj = +25°C. 0.APT55M50JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 77A @ 25°C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 1105 VDD = 367V.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1. RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 12 RG = 0.3 Volts 15 V/ns dt 5 t rr Reverse Recovery Time (IS = -77A. di/dt = 100A/µs) Tj = 25°C 2. L = 1. without notice. RG = 25Ω.3 Duty Factor D = t1/t2 0. Peak IL = 77A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-77A di/dt ≤ 700A/µs VR ≤ 550V TJ ≤ 150°C 6 Eon includes diode reverse recovery.21mH.5 Note: 0.08 PDM Z JC.9 0.0 IRRM Peak Recovery Current (IS = -77A. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE. THERMAL IMPEDANCE (°C/W) θ 050-7229 Rev A 6-2004 0. JUNCTION-TO-CASE vs PULSE DURATION 10 . di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -77A.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs.6Ω Eon UNIT pF 70 265 70 120 26 17 55 VDD = 275V Fall Time MAX 12400 2215 ID = 77A @ 25°C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN µJ 1595 VDD = 367V.04 SINGLE PULSE 0. di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 33 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.7 0.2 Tj = 125°C 9.

DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3. GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4. TEMPERATURE VGS(TH).30 1. DRAIN-TO-SOURCE ON RESISTANCE BVDSS.8 0. PULSE TEST @ <0. DRAIN CURRENT (AMPERES) VGS =15 & 10V RC MODEL 150 TJ = -55°C TJ = +25°C 50 TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS. RDS(ON) vs DRAIN CURRENT -50 -25 0 25 50 75 100 125 150 TJ.20 1.7 0.10 VGS=10V 1. LOW VOLTAGE OUTPUT CHARACTERISTICS 1.0218 20.5 0.5A GS 1.40 V 60 50 40 30 20 10 0 25 50 75 100 125 150 TC. CASE TEMPERATURE (°C) FIGURE 6. TRANSIENT THERMAL IMPEDANCE MODEL 100 200 4V Case temperature.9 0.10 1.00 VGS=20V 0. JUNCTION TEMPERATURE (°C) FIGURE 8.05 1.0 0.5 1. MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2. JUNCTION TEMPERATURE (°C) FIGURE 7. ON-RESISTANCE vs.0 0. DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX.6 -50 -25 0 25 50 75 100 125 150 TC. (°C) 250 6.90 0. THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 ID.0 1.0 -50 1.5V 6V .1F ID. DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 150 050-7229 Rev A ID.Typical Performance Curves APT55M50JFLL 250 Junction temp.5 % DUTY CYCLE 200 0 5.90 0. TRANSFER CHARACTERISTICS RDS(ON). CASE TEMPERATURE (°C) FIGURE 9. (°C) Power (watts) 0.0244 0.5 1. BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ.95 0.2 = 38.85 = 10V 2.00 0.15 80 RDS(ON). DRAIN CURRENT (AMPERES) FIGURE 5.701F 0.0731F 0. THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ 38.5V 0 FIGURE 2.1 1. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 70 50 4. 250 µSEC.133 0.5A GS 20 40 60 80 100 120 140 160 ID. DRAIN CURRENT (AMPERES) 5V 100 1.80 0 D 1.5V 0 5 10 15 20 25 30 VDS.

7 0. GATE RESISTANCE .3 0. GATE-TO-SOURCE VOLTAGE (VOLTS) 10. SWITCHING ENERGY VS.Ciss 50 1mS 10 10mS C.000 100µS 1 APT55M50JFLL 30.5 VSD.000 Eon 1. GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 1. MAXIMUM SAFE OPERATING AREA 16 VGS.000 4.3 1. DRAIN CURRENT (AMPERES) 308 = 5Ω T = 125°C J L = 100µH 100 80 60 40 tr 50 20 td(on) 0 10 30 0 10 50 70 90 110 130 ID (A) FIGURE 14. DELAY TIMES vs CURRENT 30 3500 70 90 110 130 ID (A) FIGURE 15.000 100 50 Crss 10 0 10 20 30 40 50 VDS. GATE RESISTANCE (Ohms) FIGURE 17.9 1.000 L = 100µH E ON includes Eoff diode reverse recovery.000 3000 7.000 OPERATION HERE LIMITED BY RDS (ON) IDR.000 3. REVERSE DRAIN CURRENT (AMPERES) ID. SOURCE-DRAIN DIODE FORWARD VOLTAGE 140 250 V DD R G 120 td(off) 200 = 367V = 5Ω T = 125°C J tf L = 100µH V 150 DD R G 100 = 367V tr and tf (ns) td(on) and td(off) (ns) Coss TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 550 VDS. CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300 100 TJ =+150°C TJ =+25°C 10 1 0. SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) SWITCHING ENERGY (µJ) 6-2004 J 6. 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11.1 1. RISE AND FALL TIMES vs CURRENT 8. SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13.5 0. CAPACITANCE (pF) 100 I D = 77A 12 VDS= 60V VDS= 150V 8 VDS= 240V 4 0 0 100 150 200 250 300 350 400 Qg.000 V I DD D 50 = 367V = 77A T = 125°C 050-7229 Rev A 2500 2000 1500 V Eon 1000 DD R G = 367V = 5Ω T = 125°C J L = 100µH 500 0 10 Eoff 30 E ON includes diode reverse recovery.000 0 0 5 10 15 20 25 30 35 40 45 50 RG. 50 70 90 110 130 ID (A) FIGURE 16.000 2. TOTAL GATE CHARGE (nC) FIGURE 12. DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10.

3 (1.202 5.434.S.patents 4.033) 12.378) Hex Nut M4 (4 places) .2 (1.496) 38. APT’s products are covered by one or more of U. 38.6 (.748.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson.587) 15.6 (.187) H=4. Figure 20.434 5.103 5.474 5.336 6.14 (.2 (.1 (.2 (0.9 (.U.262.480) 31.4 (1.903 5.9 (.3 (.157) (2 places) W=4.045.307) 8.895.3 (.T.169) H=4.0 (.6 (.193) (4 places) 050-7229 Rev A 7. US and Foreign patents pending.129) 3.089.522 5.8 (.992) 0.0 (.256.143) 14.019.1 (.193) Drain * Source terminals are shorted internally.528. Turn-off Switching Waveforms and Definitions Figure 18.058 and foreign patents.322) 8.7 (1.5 (1.85 (.95 (.594) 1.9 (.157) 4.786 5.030) 12.2 (.084) * Source 30.350) 9.240) 31.182.077) 2.504) 4. Turn-on Switching Waveforms and Definitions APT60DF60 V DD V DS ID G D. All Rights Reserved.8 (.185) 30.Typical Performance Curves APT55M50JFLL 90% Gate Voltage 10% Gate Voltage TJ125°C td(on) td(off) tr TJ125°C Drain Voltage 90% Drain Current 90% tf 5% 10% 5% 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 19. Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.095 5.496) 25.810 5.8 (.283.583 4.0 (1. 6-2004 r = 4.231.234 5.161) W=4.000) 0. Current handling capability is equal for either Source terminal.2 (.8 (.503.248) 25.165) (2 places) 3.75 (.1 (1.463) 12.