SPECIAL TOPICS VACUUM TUBES AND SEMICONDUCTOR THEORY, DIODE CIRCUITS AND

APPLICATIONS,
1. What will happen to an atom if an electron is either taken out or taken ito the same atom?
a. Becomes negative ion
c. becomes an ion
b. Becomes positive ion
d. nothing will happen
2. Emission of electrons from a material by an application of a very high voltage
a. Secondary
b. thermionic
c. high field
d. photoelectric
3. Another name for vacuum tube diode.
a. Fleming valve b. audion
c. thyratron d. detector
4. Which terminal of the tetrode is nearest to its anode?
a. Screen grid
b. cathode
c. suppressor grid d. control grid
5. _____ are electrons at the outermost shell.
a. Valence
b. inside the shell c. outside shell
d. conductor
6. A good material conductor should have ____ valence electrons.
a. 21
b. 10
c. 1
d. 3.5
7. The name of a pure semiconductor material that has an equal number of electrons and holes.
a. N-type
b. pure type
c. intrinsic d. P-type
8. The arrow in the schematic symbol for a diode points which way?
a. Towards the cathode
c. in the direction of current flow
b. Towards the anode
d. towards magnetic north
9. The cathode of a semiconductor diode indicates a ____ charge during conduction.
a. Positive b. either, depending on design c. neutral
d. negative
10.In order to simply a circuit, in the analysis and computation, the diode is normally assumed as
a. Zero
b. ideal
c. imaginary d. infinite
11.It is the maximum permissible reverse voltage for the diode.
a. PIV
b. Barrier voltage c. maximum voltage
d. tolerable voltage
12.What is another name for clamper?
a. Slicer
b. limiter
c. clipper
d. DC restorer
13.Circuit that is used to produce a DC output voltage that is some integral multiple of the peak of
the AC input voltage.
a. Integrator
b. restorer
c. differentiator
d. multiplier
14.What is the process which AC is converted to pulsating DC?
a. Charging
b. rectification
c. filtering d. clipping
15.How many diodes will you use to have a basic full wave bridge rectifier?
a. 3
b. 1
C. 2
D. 4
16.Find the DC voltage from a full wave rectifier with 120 v peak rectified voltage?
a. 60 v
b. 7.639 v
c. 76.39 v d. 6 v
17.What is the maximum efficiency of a full wave rectifier?
a. 50%
b. 40.6%
c. 81.2%
d. 10%
18.A full wave rectifier circuit utilizing a full input cycle has a ripple frequency in its output equal to
a. 60 Hz
b. 120 Hz
c. 110 Hz
d. 220 Hz
19.It is the remaining variation in the output of a power supply filter
a. Residual voltage
b. ripple
c. offset voltage
d. persistent voltage
20.A DC voltage supply is measured at 50 volts and drops to 45 volts when the load is connected.
What is the value of voltage regulation?
a. 5%
b. 50%
c. 60%
d. 11.11%
21.What type of bias is required for an LED to produce luminescence?
a. Reverse
b. zero
c. forward
d. inductive
22.What special type of diode is capable of both amplification and oscillation?
a. Point contact
b. junction
c. zener
d. tunnel
23.What is the principal characteristic of tunnel diode?
a. A very high PIV
c. high forward current rating
b. A high forward resistance
d. a negative resistance region
24.It is a circuit that uses 2 diodes to provide DC output voltage equal to twice the AC voltage.
a. Doubler
b. regulator c. multiplier
d. all of these
25.When the peak output voltage is 100v, the PIV for each diode in the full wave center tapped
rectifier is
a. 100v
b. 200v
c. 141 v
d. 50v
26. Which is the most widely used semiconductor?
a. Copper
b. Germanium
c. Silicon
27.The merging of a free electron and a hole is called
a. Covalent bonding
b. Lifetime
c. Recombination

d. None of the above

d. Thermal energy

28.The amount of time between the creation of a hole and its disappearance is called

a. Doping

b. Lifetime

c. Recombination

29.The valence electron of a conductor is also called a

a. Bound electron b. Free electron c. Nucleus

d. Valence
d. Proton

30.In an intrinsic semiconductor, the number of free electrons

a. Equals the number of holes
b. Is greater than the number of holes
c. Is less than the number of holes
d. None of the above
31.Holes act like
a. Atoms

b. Crystals

c. Negative charges

32.Trivatent atoms have how many valence electrons?

a. 1
b. 3
c. 4

d. 5

33.A donor atom has how many valence electrons?

a. 1
b. 3
c. 4

d. 5

d. Positive charges

34.If you wanted to produce a p-type semiconductor, which of these would you use?
a. Acceptor atoms
b. Donor atoms
c. Pentavalent impurity d. Silicon
35.Holes are the minority carriers in which type of semiconductor?
a. Extrinsic
b. Intrinsic
c. n-type
d. p-type
36.Silver is the best conductor. How many valence electrons do you think it has?
a. 1
b. 4
c. 18
d. 29
37.Which of the following doesn't fit in the group?
a. Conductor
b. Semiconductor c. Four valence electrons d. Crystal structure
38.Positive ions are atoms that have
a. Gained a proton b. Lost a proton

c. Gained an electron

d. Lost an electron

39.Which of the following cannot move?

a. Holes
b. Free electrons

c. Ions

d. Majority carriers

40.What is the barrier potential of a silicon diode at room temperature?

a. 0.3 V
b. 0.7 V
c. c 1 V
Celsius

d. 2 mV per degree

41.To produce a large forward current in a silicon diode, the applied voltage must be greater than
a. 0
b. 0.3 V
c. 0.7 V
d. 1 V
42.Surface-leakage current is part of the
a. Forward current b. Forward breakdown

c. Reverse current

43.The voltage where avalanche occurs is called the

a. Barrier potential b. Depletion layer c. Knee voltage

d. Reverse breakdown

d. Breakdown voltage

44.When the reverse voltage increases from 5 to 10 V, the depletion layer

a. Becomes smaller
b. Becomes larger
c. Is unaffected

d. Breaks down

45.When the graph of current versus voltage is a straight line, the device is referred to as
a. Active
b. Linear
c. Nonlinear
d. Passive
46.What kind of a device is a diode?
a. Bilateral
b. Linear

c. Nonlinear

47.How is a nonconducting diode biased?

a. Forward
b. Inverse
c. Poorly
48.When the diode current is large, the bias is
a. Forward
b. Inverse
c. Poor

d. Unipolar
d. Reverse
d. Reverse

49.How much forward diode voltage is there with the ideal-diode approximation?
a. 0
b. 0.7 V
c. More than 0.7 V d. 1 V

50.In a step-down transformer, which is larger?

a. Primary voltage
b. Secondary voltage
51.The voltage out of a bridge rectifier is a
a. Half-wave signal b. Full-wave signal

c. Neither

d. No answer possible

c. Bridge-rectified signal d. Sine wave

52.What is the peak load voltage in a full-wave rectifier if the secondary voltage is 20 V rms?
a. 0 V
b. 0.7 V
c. 14.1 V
d. 28.3 V
53.We want a peak load voltage of 40 V out of a bridge rectifier. What is the approximate rms value
of secondary voltage?
a. 0 V
b. 14.4 V
c. 28.3 V
d. 56.6 V
54.29. What is the peak load voltage out of a bridge rectifier for a secondary voltage of 15 V rms?
(Use second approximation.)
a. 9.2 V
b. 15 V
c. 19.8 V
d. 24.3 V
55.If line frequency is 60 Hz, the output frequency of a half-wave rectifier is
a. 30 Hz
b. 60 Hz
c. 120 Hz
d. 240 Hz
56.If line frequency is 60 Hz, the output frequency of a bridge rectifier is
a. 30 Hz
b. 60 Hz
c. 120 Hz
d. 240 Hz
57.With the same secondary voltage and filter, which has the most ripple?
a. Half-wave rectifier b. Full-wave rectifier
c. Bridge rectifier d. Impossible to say
58.What is the PIV across each diode of a bridge rectifier with a secondary voltage of 20 V rms?
a. 14.1 V
b. 20 V
c. 28.3 V
d. 34 V
59.If the filter capacitance is increased, the ripple will
a. Decrease
b. Stay the same c. Increase

d. None of these

60.The name of pure semiconductor material that has an equal number of electrons and holes
a. n-type
b. pure type
c. intrinsic
d. p-type
61.Elements that has four valence electrons are classified as
a. Conductor b. insulator
c. elemental semiconductor d.
semiconductor
62.An example of an elemental semiconductor.
a. Germanium (Ge)
c. Gallium Arsenide (GaAs)
b. Gallium Phosphide (GaP)
d. Aluminum Arsenide (AlAs)
63.Which of the following is an example of a compound semiconductor?
a. Gallium Arsenide (GaAs)
c. Gallium Phosphide (GaP)
b. Aluminum Arsenide (AlAs)
d. All of the above
64.The electron flow in a semiconductor material is
a. opposite in direction of hole flow c. the same direction with hole flow
b. the drift current
d. known as the conventional current
65.A semiconductor that is free from impurities
a. Intrinsic
b. extrinsic c. compensated

d. elemental

66.The process of adding impurities in a semiconductor material.

a. Growing
b. diffusion c. doping
d. depleting
67.Impurities with five valence electrons.
a. Acceptor
b. donor
c. trivalent
68.Example of acceptor impurities.
a. pentavalent b. trivalent

d. pentavalent

c. tetravalent

d. hexavalent

69.If the substance used in doping has less than four valence electrons, it is known as
a. Acceptor
b. donor
c. trivalent
d. pentavalent
70.Commonly used as donor impurities.

compound

a. Antimony (Sb)

b. Arsenic (As)

71.Example of trivalent impurities.

a. Boron (B)
b. Gallium (Ga)

c. Phosphorus (P)

c. Indium (In)

d. all of the above

d. all of the above

72.Donor-doped semiconductor becomes a

a. N-type semiconductor b. good conductor c. p-n semiconductor
semiconductor
73.The most extensively used semiconductor.
a. Silicon
b. germanium

c. gallium phosphide

d.

P-type

d. gallium arsenide

74.The movement of charge carriers in a semiconductor even without the application of electric
potential.
a. diffusion current b. conventional current
c. drift current
d.
saturation
current
75.The restriction of certain discrete energy levels in a semiconductor material can be predicted
generally by using what model?
a. Bohr modelb. string model
c. wave model
d. particle model
76.Is defined as the energy acquired by an electron moving through a potential of one volt.
a. electron Joules (eJ) b. electron-potential
c. oxidation potential
d. electron Volt
(eV)
77.When an electron at the conduction band falls back to the valence band it will recombine with
the hole. This is known as
a. Regeneration
b. reunion
c. combination
d. recombination
78.What is formed when n-type and p-type semiconductors are brought together?
a. pn junction b. semiconductor junction
c. energy band gap d. semiconductor diode
79.The device that is formed when an n-type and p-type semiconductors are brought together
a. pn junction b. semiconductor junctionc. depletion region d. junction diode
80.An external voltage applied to a junction reduces its barrier and aid current to flow through the
junction
a. reverse bias b. external bias
c. junction bias
d. forward bias
81.If a half-wave rectifier is used with 117-V rms ac (house mains), the average dc output voltage is
about:
a. 52.7 V.
b. 105 V.
c. 117 V.
d. 328 V.
82.If a full-wave bridge circuit is used with a transformer whose secondary provides 50 V rms, the
PIV across the diodes is about:
a. 50 V.
b. 70 V.
c. 100 V.
d. 140 V.
83.A transformer secondary provides 10 V rms to a voltage-doubler circuit. The dc output voltage is
about:
a. 14 V.
b. 20 V.
c. 28 V.
d. 36 V.
84.A device containing an anode and a cathode or a pn junction of a semiconductor as the principal
elements and provides unidirectional conduction.
a. Diode
b. diac
c. triode
d. triac
85.The p-type material in a semiconductor junction diode is technically termed as
a. positive terminal b. negative terminal
c. cathode d. anode
86.The area in the semiconductor diode where there are no charge carriers
a. depletion layer
b. depletion region
c. depletion mode d. depletion area
87.A junction diode is said to be forward-biased if
a. Anode is supplied more positive than the cathode.
b. Anode is supplied more negative than the cathode.
c. A voltage greater than threshold is applied, with cathode less positive than
anode.
d. A voltage greater than threshold is applied, with cathode less negative than anode.

88.What do you call the very small amount of current that will flow in the diode when it is reverse
biased?
a. saturation current b. reverse saturation current
c. cut-off current d.
holding
current
89.The minimum voltage required before a diode can totally conduct in a forward direction.
a. triggering voltage b. breakdown voltage
c. saturation voltage
d.
threshold voltage
90.The primary use of Zener diode in electronic circuits.
a. resistance regulator
b. rectifier
regulator

c. voltage regulator

d.

current

91.A diode that is especially designed to operate as a voltage-variable capacitor. It utilizes the
junction capacitance of a semiconductor diode.
a. Varactor
b. varicap
c. varistor
d. A and B are correct
92.Refers to a special type of diode which is capable of both amplification and oscillation.
a. Junction diode
b. Tunnel diode
c. Point contact diode
d.
diode

Zener

93.A negative resistance diode commonly used in microwave oscillators and detectors, it is
sometimes used as amplifiers. This device is also known as Esaki diode.
a. varactor diode
b. Schottky diode c. IMPATT diode
d. tunnel diode
94.The average value of a half-wave rectified voltage with a peak value of 200 V is:
a. 63.7 V
b. 127.3 V
c. 141 V
d. 0 V
95.When a 60Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the output
frequency is:
a. 120Hz
b. 30Hz
c. 60Hz
d. 0Hz
96.The peak value of the input to a half-wave rectifier is 10 V. The approximate peak value of the
output is:
a. 10 V
b. 3.18 V
c. 10.7 V
d. 9.3 V
97.The average value of a full-wave rectified voltage with a peak value of 75 V is
a. 53 V
b. 47.8 V
c. 37.5 V
d. 23.9 V
98.When a 60 Hz sinusoidal voltage is applied to the input of a full-wave rectifier, the output
frequency is
a. 120 Hz
b. 60 Hz
c. 240 Hz
d. 0 Hz
99.When the peak output voltage is 100 V, the PIV for each diode in a center-tapped full-wave
rectifier is (neglecting the diode drop)
a. 100 V
b. 200 V
c. 141 V
d. 50 V
100.
A certain power supply filter produces an output with a ripple of 100mV peak-to-peak and
a dc value of 20 V, the ripple factor is
a. 0.05
b. 0.005
c. 0.00005
d. 0.02