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PREBOARD in ELECTRONICS ENGINEERING c. Cannot be determined d.

Sometimes True
“Commit to the LORD whatever you do and HE will 8. For proper operation, the____________________ is
establish your plans” forward-biased and the _____________________ is
-Proverbs 16:3 reverse-biased.
a. base-emitter junction, collector-emitter junction
1. What is the bandgap energy for diamonds? b. base-emitter junction, base-collector junction
a. 2.5eV b.1.1eV c. collector-base junction, base-emitter junction
c.5.6eV d. 0.1eV d. collector-emitter junction, collector-base junction
2. _______________ allows simplifying a one-port circuit 9. The ________________ of the bipolar transistor
to a current source in parallel with an impedance. consists of an exponential voltage-dependent
a. Norton’s Theorem current source tied between the collector and emitter,
b. Thevenin’s Therorem and a diode (accounting for the base
c. Kirchoff’s Current Law current) tied between the base and emitter.
d. Faraday’s Law of Magnetic Induction a. r-paramter model
3. Charge carriers move in semiconductors via two b. h-parameter model
mechanisms: _____ and _______. c. small signal-model
a. drift and diffusion d. large-signal model
b. drift and avalanche 10. The ______ stage provides a moderate voltage gain,
c. avalanche and diffusion a moderate input impedance, and a moderate
d. none of the above output impedance.
4. The diffusion current density is proportional to the a. common-drain
_________ of the carrier concentration b. common-collector
a. gradient c. common-base
b. curl d. common-emmiter
c. divergence 11. The ___________ provides a voltage gain less than
d. laplacian unity, a high input impedance, and a low output
5. The ___________ is the minimum energy required to impedance, serving as a good voltage buffer
dislodge an electron from its covalent a. emitter follower
bond. b. common base
a.barrier potential c. common emitter
b. bandgap energy d. common source
c. potential energy 12. MOSFETs operate in the ________ region if the
d. diffusion energy drain voltage is more than one threshold below the gate
6. Under a high reverse bias voltage, pn pn junctions voltage
break down, conducting a very high current. a. triode
Depending on the structure and doping levels of the b. diode
device, ____________ breakdown may occur. c. negative resistance
a. Zener b. Avalanche d. constant current
c. Drift d. answers a or b 13. A measure of the small-signal performance of
7. The statement” A voltage-dependent current source voltage-dependent current sources is the
can form an amplifier along with a load resistor” is _____________ defined as the change in the output
a. True b. False current divided by the change in the input voltage.

same impedance gain equal to one plus the ratio of b. logarithmic 14. rise above . Placing a bipolar device around an op amp provides d. The impedance seen looking into the gate of a c. structure. cascode must __________the phase crossover frequency. a. infinity 20. Op amps suffer from various imperfections. transfer function a.g. transfer function a _____________function 22. exponential a. the gain crossover frequency d. hyperbolic tangent MOSFET is equal to ________ d. 19. cascade 24. A capacitance tied between the input and output of a. 23. parabolic d. slightly higher impedance two resistors. significantly higher gain of the op amp. logarithmic behavior c. roll-off rate d. inverting amplifier a. frequency 18. lower impedance that is inversely proportional to the d. b. Capacitance-gain effect 17. The _______________ topology exhibits a nominal a. including b. b. noninverting amplifier the ___________ of the circuit.____________. reluctance b. summing amplifier injecting a test signal. To obtain the frequency response. transconductance a. resulting in a high output a. reducing c. summing amplifier b. The tail b. Bipolar differential pairs exhibit a a. b. The circuit also suffers from a gain error c. The gain thus rolls off at high signal d. voltage follower c. negative feedback b. c. we must derive a. gain. Stacking a transistor atop another forms a _______ response. differentiators signal goes around the loop. Faraday effect most notably. logarithmic a. stack d. gain 16. The ________of a feedback system can. c. parabolic with a factor equal to one minus the gain of the amplifier. It determines many d. 21. exponential This is called _______________. r0 capacitances exhibit a ______________.a. integrators properties of feedback systems. zero-level detector be obtained by breaking the loop. darlington c. fall below ____________input/output characteristic. zero frequencies. 15. signal flow c. b. linear an inverting amplifier appears at the input b. 1 / gm the gain. c. As the frequency of operation increases. Miller effect dc offsets and input bias currents. Thevenin effect These effects impact the performance of various circuits. in principle. loop gain impedance. To avoid oscillation. d.. d. and I/O impedances. and calculating the gain as the c. e. conductance differential input of about 4Vt. impedance current can be mostly steered to one side with a b.

negative feedback loop b. Dynamic resistance b. avalanche effect b. which in turn given on the data sheet. It contains n b. diffusion effect c. Recombination and vertical inputs. A graph showing the gain or phase performance of b. A phenomenon that occurs for large reverse voltages a. What do you call the ohmic resistance of the transistors for a small quiescent current semiconductor? a. A condition where the transistor is operating at the c. Buttord 35. Lissajous’ pattern 30. Avalanche effect a. thermal breakover 34. Full saturation across a pn junction where the free electrons are b. Impurification ripple in the passband and stopbands. Temperature coefficient c. The ___________ response provides a sharper intrinsic semiconductor to change its conductivity. Lee de Forest’s pattern . Bode plot d. Elliptic upper end of the load line with a base current that is d. A push-pull stage operating at high temperatures d. a factor of c. Static resistance 26. c. b. The pattern appearing on an oscilloscope when b. makes them dissipate even more. True a. Zener Effect harmonically related signals are applied to the horizontal c. positive feedback loop a. a. The crossover distortion resulting from the dead d. Performance graph zone can be reduced by biasing the push-pull 31. Derating factor b. Chebyshev one-tenth of the collector current. d. the output stage may c. Crowbar may suffer from _____________. Semiconductor resistance to suppress the nonlinearity. Recombination a. Breaker 27. none of the above c. Crystallization complex poles on an ellipse c. Shockley’s pattern an electronic circuit at various frequencies. Thomas d. Piezoelectric effect 36. whereby 33. transition than Butterworth at the cost of some a. False b. Mid saturation valence electrons. d. Doping b. Ogive graph d. Attenuation d. Avalanche a. In low-distortion applications. Reduction factor a. Limiter d. A value that tells you how much to reduce the power the elevated temperatures allow the output transistors to rating for each degree above the reference temperature draw higher currents. Surge c. open loop when it is used to protect a load against supply. 32. The metaphor used to describe the action of an SCR a. It is the process of adding impurity element to an 28. thermal runaway d. 29. Braun’s pattern a. Gain-frequency curve 25.c. Hard saturation accelerated to such high speeds that they can dislodge c. be equal b. Bulk resistance be embedded in a _________ d.

Tunnel diode b. Zener diode 38. Impurity d.37. Peak point voltage c. Bleeder current b. Avalanche effect a. Varactor b. Complementary a. It refers to the average amount of time between the 45. 47. Wafer c. Valley point voltage d. A term use to describe the death of amplification. Trip point d. It is a device that acts like two back-to-back-zener depletion-mode device when the gate to source voltage diodes. Recombination time a. Threshold voltage b. advanced circuits. Which of the following special purpose diode doesn’t positive feedback to simulate the action of a thyristor. A basic circuit that a designer can modify to get more chassis for integrated components. Prototype d. a. Transformer d. Zener latch d. Varistor a. Thyrector b. Hybrid 50. Degradation b. Varactor diode d. Hysteresis circuit c. Schottky diode c. Oscillation output of a comparator. a. Attenuation a. A filter that blocks a signal with at most one 46. Complementary zener c. Transient current d. Breakdown effect . Schmitt trigger b. Knee ohmic region and the constant current region of a 48. Transistor c. Trigger c. Model circuit b. Piezoelectric effect b. Push pull c. Delay time b. It is a comparator with hysteresis. Base b. b. Latch b. Hysteresis c. Thyristor 40. Miniature circuit c. High field emission c. The voltage that provides the border between the d. a. Trigger-comparator d. Brick wall filter a. Cauer filter b. What is the other term for zener effect? 43. Conduction time c. What do you call a thin slice of crystal used as a 42. is zero. A connection of two transistors connected with 44. the diode of a rectifier. Surge current c. Life time d. a. that acts as a latch. It is define as a large initial current that flows through creation and recombination of a free electron and a hole. Switch d. Latch 41. Substrate a. It is defined as a four-layer semiconductor device frequency. a. It is the value of the input voltage that switches the a. Butterworth filter d. Notch filter c. Pinch off voltage 49. have depletion layer? a. Saturated current 39.

7% 10mW 60. output power. 35W d. transistor a. determine the circuit efficiency. 3.11% b.4Hz b. 12. 7. 100mW c.4.5W/C 67.6mV b. For an op-amp having a slew rate of SR = 2V/μs. 6. Calculate the input bias currents at the non-inverting 54. 51.23W d. What is the unloaded.4V b. 0. 5. 20 c. 91. 12% c. 20% d. Determine the output voltage of an op-amp for input amplitude of 0. 5Hz c. 6. second harmonic amplitude of 0.51. 26. rated at150 W (25C ) .1.1V c.6V a.1V class A amplifier for a supply of 12 V and outputs of 6V. a. 45. Calculate the value of voltage regulation.5W b.28.32. For a class B amplifier using a supply of Vcc = 30 V rectified voltage of 30 V.7W c. 10% with a 100-μF filter capacitor connected to a load 52. Calculate the ripple voltage of a full-wave rectifier 70. 27.6C/W. 66.7mV reading is required above by a derating factor of 0. 81.13W b. a. A transistor has a collector current of 10mA and a mounting insulation has 0. 1kHz d. determine the transistor specified values of IIO = 5nA and IIB = 30 nA.5nA.5nA. third a. 28. 27. determine the maximum current of 50 mA.7W b. 14% has a differential gain of Ad =4000 and the value of 57. If the regulated output voltage is 12V drawing to a load drawing 50 mA .0W b. 41. When connected to a load.45.10 b.9mV d. for an 80-W silicon transistor (rated at 25degC) if the a. For a class B amplifier providing a 20-V peak to a drawing to a load drawing 50 mA if the peak rectifier 16-Ω load (speaker) and a power supply of Vcc = 30 V. 32. Determine the cutoff frequency of an op-amp having supply of Vcc = 24 V with peak output voltages of VL (p) specified values B1 = 1 MHz and AVD = 200 V/mV. If an amplifier with gain of -1000 and feedback of β=- at case temperature of 125C. A 2N3904 has VCE=10V and IC=20mA.5 V.2% c.5C/W ) the transistor. capacitor C= 100μF. Calculate the ripple of a capacitor filter for a peak 53. Both 27.3.1% d. 71. dissipation a.25 V. 200mW d. 4. 54.67% c.7W c.5% d.7% d.3. A zener regulator has an input voltage that may vary with a 100-μF filter capacitor connected to a load from 22 to 30V.5W c.50% b. a.20 b.5W a. 30 d. 40 harmonic amplitude of 0. 1% (1.3% 62.5V c.5nA a.9V d.5nA b. = 22 V. 72% d. Determine what maximum dissipation will be allowed CMRR is 100.25W b. 10. 66.5 V in 10 μs? of 2.25. and a load and driving a load of 16Ω. 30W c.61. For a class B amplifier using a supply of Vcc = 30 V and inverting terminal respectively of an op=amp having and driving a load of 16Ω. 61.05 V. 78% 65. voltages of Vi1 = 150 μV and Vi2 = 140 μV. A silicon power transistor is operated with a heat sink a. 25% c.91W 63. and the 68.1 V. Calculate the efficiency of a transformer-coupled a. a. 2.9% a. and fourth harmonic 66. 32. 78. A dc voltage supply provides 50 V when the output is 69.10% b.5nA d.7W d. 4. What maximum power base current of 40uA. 2. Calculate the filter dc Voltage of a full-wave rectifier a. voltage is 30 V. 5.7V d.1% b. 0. 52. 40 d.81W c.5W d.2V b.7% b. Calculate the total harmonic distortion for the what is the maximum closed loop voltage gain that can following amplitude components: fundamental amplitude be used when the input signal varies by 0. 30 c. Calculate the efficiency of a class B amplifier for a 64. What is the current gain of the can be dissipated if the ambient temperature is 200C. 50 59.1 has a gain change of 20% due to temperature.62% b. 27.3% c. 56.2% b. 5. 68% c. 13% d. The amplifier a.1% c. 35.8mV c. 2N3904 is limited to a. a.5% d. the output drops to power dissipation? 56 V. 1MHz a.5nA 55.Both 32. 40W calculate the change in gain of the feedback amplifier 58.

Clipper c. 1. It is an extremely small amount of current that exists b. .140Ω b. A zener regulator has an input voltage ranging from d. A 2N5668 has VGS(off)=-4V and IDSS=5mA. What is the typical range of reverse breakdown c. allowable series resistance? a. Doping c. What is the typical energy gap of silicon is the maximum allowable series resistance? semiconductor? a. Silicon 72. 0.43eV 71.8V. It is sometimes called hot-carrier diode. Quadvalent a. J. Phosphorus 74. Electron-hole are the gate voltage and drain current at the half cutoff d. 2000 Ω b. Forward leakage current has been carefully refined to reduce the number of d. Forward saturated current d. Lattice voltage of silicon diode? d. Rectifier a. Rutherford d. The time required for the minority carriers to return to d. Regulator b. 0. Crystal 85. -2V. It occurs when a conduction-band electron loses the zener voltage is 6. The term applied to any semiconductor material that c. Thompson c. 1pA b. Doping 73. Zener current impurities to a very low-essentially as pure as can be 84. Maxwell the majority carrier state in the opposite material.1eV d. Ionization a. Trivalent 83. 1. Schottky diode a. Tetravalent in a reverse biased diode. What c. 5mA d. Which of the following semiconductor material is a.67eV c. 10pA d. Carbon c.750Ω b. Who discovered electrons in 1897? b. Ionization d. Chadwick 86.25mA c.and the load resistance varies from 140Ω to 10kΩ. E. Tunnel diode c. -4V. 1000Ω d. J. 280 Ω d. J. what is the maximum energy and falls back into a hole in the valence band.0. 117 Ω a. GaAs 15 to 20V and a load current ranging from 5 to 20mA. 0 a.4 Ω c. Boron a. How does minority carriers produced? b. 79. Germanium d. 50-400V b.03eV b. If 80. what 78. Intrinsic a. Which of the following is not a pentavalent atom? a. Thermally produced 75. Atom with four valence electrons is called ____. 50-1kV a. Light energy a. Arsenic part of the applied waveform d. Solid a. c.1uA b. Gunn Diode b. 76. A network that employ diodes to remove away a b.-1V. Clamper 82. What is the typical reverse saturated current of a made available through modern technology. Reversed saturated current 76. 100-10kV c. 1. 410 Ω c. 2-200V 77. silicon diode? a. Antimony portion of an input signal without distorting the remaining c. Pentavalent b. d. Shockley diode sensitive to temperature change? b. Recombination point? 81. 1mA b. 10uA c.

Encoder 94.1V c.79V form? 91. Field programmable gate array d. 1011101 flop? b. Transition time 95. 0. Determine the thermal voltage of a diode at 27°C c. a. what is its value when the temperature d. What is the knee voltage of a silicon diode at 75°C? a. what is the binary value for d. Field p-type gate array b. Storage time b.3mA. 26mV c. De Morgan’s Theorems a. 30mV d. 2. Full adder c. 1010 d. F=A’+BC+ABC’ a. What does FPGA stands for? a. If r’d is 10Ω.58V d. 0101 c. 10111101 d. It is a digital circuit that adds two bits and an input 93. 10100111 a. 1111 b. Which of the following can be used as universal b. Which of the following is the invalid state for RS flip a. The complement of a sum of variables is equal to the a. Which of the following expression is in standard SOP d. R=1 d. Find the 2’s complement of 10110010.3mA.7V b. Field programmable gate arrangement c. 0000 a. Convert the binary number 11000110 to gray code 101.32uA b. NOT operating system) 96.0. OR 87. Rise time a.21mA.0. R=0 . Half adder b. At 20°C. 9. 10000101 b. forward biasing voltage supply of 10V.a.20mV b. NAND (common temperatures for components in an enclosed d. 88. S=0. A silicon diode is in series with 1kΩ resistor and a of the variables. 11001101 c.7V c.0. 9. Demultiplexer d.0. 01001101 a. FET programmable gate array 100. 01001100 b.21mA.43 eV? b. 669nm d. XNOR increases to 100°C? 97.7V 98. 10nA d. S=1. A logic gate that produces a HIGH output only when a. carry to produce a sum and an output carry. 0A product of the complements 90. 869nm the cell in the lower right corner? 92. F=ABC+AB’C+A’B’C’ LED with an energy gap level of 1. Karnaugh’s Rule c. 0.0. 1V its two inputs are at opposite levels. XOR 89. OR a. what a. the reverse saturation current of a silicon c. 9. R=0 c. What is the wavelength of the light produced by an a. Baudot’s Law b. AND d. 9. Time constant gate? c. Boolean’s Rule is the anode to cathode current and voltage? b.79V d. In a 4 variable K-map. 768nm 99. 50nA c. 569nm c. 0V b. S=0. All of the above c. F=AB+AC+BC b. NOR diode is 10nA. 10100101 c.

S=1. Chebyshev Response 109. Differential Mode Current a. modulus-12 asynchronous counter? a. T stands for: b. Time c. (c) the number of times it recycles in a second a. 100 c. Comparator 105. Toggle currents is called ______. How many flip-flop/s is/are need to produce 2kHz a. State amplitude response in the pass band.2 b. J=1. Modulus b. ripple counters 116. Differentiator a. Bessel Response (a) the number of flip-flops d. 2 c.4 b.) XOR a. J=1. K=0 113. Op-Amp Input Current 104.1 b. J=0. 1100 c.3 d. A circuit whose output voltage is proportional to the b. Butterworth Response (b) the actual number of states in its sequence 117. K=1 b. Three cascaded modulus-10 counters have an c. How many flip-flops are needed to produce slope of the input voltage. The ____ gate is called the “all or nothing” gate. K=0 a. multiple clock counters possible in the pass band. 8 114. A circuit whose output voltage is proportional to the 106. c. F = (x’+y)(x+y)(y+z) . Transient 112. The difference between the two op-amp input d. 8 c. 6 d. 12 d. 0000 102. Integrator through which a counter will d. Sequence a. Express the Boolean function F= xy + x’z in a 111. How many flip-flops are needed to produce 4-bit c. The modulus of a counter is c. Input Bias Current a. 103.30 b.) OR 110. 4 c. Trip d. Integrator asynchronous counter? d. modulus counters b.) AND (d) the maximum possible number of states b. Summing Amplifier sequence? 115. A filter response that exhibits maximum flatness b. Input Offset Current frequency from 8kHz input? b. c. 1111 a. R=1 a. 10000 118. Asynchronous counters are known as: d. Chebyshev Response d. J=0. 10 b. Notch Filter response c. Bessel Response 108. Summing Amplifier a. decade counters a. 4 c. A filter response that exhibits an equiripple a. Comparator 107.d. 1000 d. Counts c. 1101 b. The terminal count of a modulus-13 binary counter product of maxterm form. Notch Filter response d.) NOR overall modulus of d. is a. b. In T flip flop. Butterworth Response a. What do you call the number of unique states c. Differentiator d. A flip-flop is in the toggle condition when: d. K=1 area under the curve of the input voltage.

state table a. just greater than 1 an inverting op-amp 121. amplifier? a. Forward biased in the input. F = (x+y’)(x+z)(y+z) 40 kHz. what do you call a relatively small. Fanning d. F = (x’+y)(x+z)(y+z) a. and transistors. input dc voltage and a regulated output voltage. dc power supply a. ________. rd= 40 and a feedback circuit inverting op-amp whose resistance value R= 10 . The transistors are memory? switched between the ON state (saturation) and the OFF a. 6. Forward biased in the feedback path. Where and how should the diode 120.7 times the dB gain of the first. the operational capability? a. 62 dB d. A ______ is a dc–dc converter with an unregulated 128. c. what do you call the time b. just less than 1 a. Cascading b. replacing Rf of b. negligibly small an inverting op-amp c. what 123. outputs and flip-flop b. Fall time These can be constructed by using an operational d. 21 dB c. inverting op-amp a. The current gain of a Darlington pair is called next state.62nF states can be enumerated in a _______. Reversed biased in the input. diodes. The total dB gain of a three stage system is 120dB. replacing Ri of an capacitor appropriate for oscillator operation of 1 kHz. cache memory . The current gain of a common-base BJT be placed so that the circuit will work as a logarithmic configuration is _____________. Select the value of the d. Cascading c. unregulated power supply beginning of a response in the output? d. superbeta b. together with exponential b. 57 dB a. In digital design of combinational logic circuits. Logarithmic amplifiers. output and 122. Delay time 125. superalpha 127. Reversed biased in the feedback path. Cross-connecting 124. 30 dB b. Rise time amplifiers are used to perform analog multiplication. Storage time amplifier and a diode. 1. The time sequence of inputs. instructions or data from the larger but slower main capacitors. input. replacing Rf of d. switched-mode power supply 119. In computers. truth diagram d. state diagram c. alpha d. The high-speed memory that stores the most recently used converter circuitry consists of arrangements of inductor. do you call the term that refers to the connection of the Determine the dB gain of the third stage if the second output of one device to the input of a similar device stage is twice the dB gain of the first stage and the third allowing one device to drive the other in order to expand is 2.12nF four sections labeled the present state. replacing Ri of an an FET having gm= 5000 .5nF 126. This consists of c. 8. d. In switching transistors. truth table b. a.b. It is desired to design a phase-shift oscillator using c. F = (x’+y)(x+z)(x+y) state (cutoff) at rates that typically range from 10 kHz to c. regulated power supply between the changing state of the input and the c. beta c. very high b.

What is the level of IG in an FET? d. 1 uS to 10 uS b.b. None of the above of feedback resistor Rf to R1 be? 139. Both resistors and capacitors 141. Which of the following is required to start b. Increase the ac voltage component d. None of the above self-sustained oscillations to result. In which of the following applications is a pulsating c. Battery charger 129. In the IC phase-shift oscillator. What is the range of gm for JFETs? a. 0 mA a. 0. MOSFET b. 1000 uS to 5000 uS d. what should the ratio d. section in a power supply circuit? c. Which of the following transistor has depletion and d. Diodes 130. register 135. Diode c. Capacitor filter a. Only the condition BA = _____ must be satisfied for d. JFET a. 1 a. 138. Secondary of transformer oscillation? c. Zener diode d. Less than 29 c.000 d. Any value d. None of the above c. Computer b.25 IDSS b. Greater than -29 b. For what value of ID is gm equal to 0. Both capacitors c.5 IDSS c. random access memory dc voltage suitable? d. Load resistor c. Zero a. In the Wien bridge oscillator. BA > 1 d. What is the typical value of quality factor for crystal a. 1 + BA d. Decrease the ac voltage component 131. 1. BA 136. flash memory a. 10000 uS to 100000 uS 133. Zero b. 10 a. 1 b. Increase the dc voltage component network must be 180 degrees. BJT oscillators? b. Transistor 132. 20. The phase shift around the feedback network must be 137. Across which of the following components of a c. What is the purpose of an additional RC filter 180 degrees. None of the above enhancement types? 134. Radio feedback to that without feedback? c. which of the following 140. 100 142. b. -1 a.5 gm0? is (are) frequency-determining components? a. 0 following components is the controlling element? b. None of the above b. B power supply does the average (dc) voltage exist? d. What is the ratio of the input impedance with series b.000 c. which of the a. In a simple series regulator circuit. Stereo system a. 100 uS to 1000 uS c. Both resistors b. Equal to ID . 0. None of the above c. Both BA > 1 and the phase shift around the feedback a.

ohmic c. None of the above c. b. a. DMOSFET d. None of the above at a temperature of 120° C if the nominal voltage is 5.c. 28 W c. Which capacitance dominates in the forward-bias d. How many orbiting electrons does the germanium volts at 25° C and the temperature coefficient is 0.and reverse-bias directions indicate? 148. Depletion equation for the _____. Diffusion b. None of the above d. 1. a. What unit is used to represent the level of a diode as long as the gate-to-source voltage is _____ the pinch. 6.02 E23 b. One eV is equal to _____ J. 4. DMOSFET d. forward current? off value. The drain current will always be one-fourth of IDSS 151. JFET c. b. Depletion input impedance of the device. Depends on VDS b.66 E–24 144. Determine the nominal voltage for the Zener diode d. None of the above c. one-half c. 150. Diffusion b. Conversion a. a. 32 143. GaAs d. 14 d. 3 or 4 153. saturation a. EMOSFET 155. The region to the left of the pinch-off locus is d.1 149. pA a. one-fourth b. 4 c. EMOSFET 156. cut-off b. What does a high resistance reading in both d. SiO c. It is the insulating layer of _____ in the MOSFET region? construction that accounts for the very desirable high a. A good diode impedance? b. Undefined c. An open diode a. 1. 4 a. A shorted diode b. nA b. 28 mW b. HCl region? 147. mA d. 3 b.05%/° atom have? C.25 E18 d. None of the above 152. Which capacitance dominates in the reverse-bias 146. a. Calculate the power dissipation of a diode having 145. A c. A defective ohmmeter c. SiO2 154. How many terminals can a MOSFET have? ID = 40 mA. The transfer curve is not defined by Shockley's a.6 E–19 c. 11 referred to as the _____ region. JFET c. 280 mW d. 6. 2 a. Conversion a. Which of the following FETs has the lowest input a. three-fourths d.6 V . None of the above forward.

What is the maximum power rating for LEDs? b. the b. Thevenin c. At what region of operation is the base-emitter a. forward b. None of the above a. Denver G. reverse. Linear or Active 166. ideal b. Between 1 and 50 base-emitter junction must be _____-biased and the c. 500 mW d.86 V 163. None of the above d. a. The _____ diode model is employed most considered accurate. For the BJT to operate in the saturation region. Which of the following is referred to as the reverse c. hi GOD BLESS!!! b. fixed bias d. The _____ model suffers from being limited to a d. c. 10 W particular set of operating conditions if it is to be 158. Less than 1 160. Gain is smaller than 1. hybrid a. VCE impedance matching. hf Engr.or Large-signal b. What is the unit of the parameter ho of a BJT? 159. What is the typical value of the current gain of a c. Siemen reverse biased? c. Which of the following techniques can be used in c. hr Prepared by: c. VBC a. The output and input voltages are 180º out of phase. What does the negative sign in the voltage gain of b. reverse a. Undefined a. frequently in the analysis of electronic systems. None of the above c. reverse the common-emitter fixed-bias configuration indicate? c. piecewise-linear d.34 V a. 150 mW c. Cut-off common-base configuration? d. collector feedback a. voltage-divider bias 162. None of the above b. Magtibay d. ho . Gain is larger than 1.1 V the sinusoidal ac analysis of transistor networks? d. 5. Saturation d. None of the above a. d. None of the above 165. forward 167.b. forward. 4. d. practical c. Small. Unitless b. Which of the following voltages must have a c. forward. 5. Ohm a. 1 W 164. re b. 161. negative level (value) in any NPN bias circuit? d. emitter-follower transfer voltage ratio? d. VBE 168. Volt junction forward biased and the base-collector junction b. The _____ configuration is frequently used for b. Large-signal a. reverse. Small-signal 157. Between 100 and 200 base-collector junction must be _____-biased.