SEME 2N2905A

LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
HIGH SPEED
7.75 (0.305)
8.51 (0.335) MEDIUM POWER
PNP SWITCHING TRANSISTOR
4.19 (0.165)
4.95 (0.195)

0.89 max.
12.70
(0.500)
(0.035) FEATURES
min. 7.75 (0.305)
8.51 (0.335)
dia. SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
5.08 (0.200)
HIGH SPEED SATURATED SWITCHING
typ.
ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
2.54
2 (0.100)
1 3 CECC SCREENING OPTIONS
0.66 (0.026)
1.14 (0.045) SPACE QUALITY LEVELS OPTIONS
0.71 (0.028)
0.86 (0.034)

45

TO39 METAL PACKAGE

Underside View
PIN 1 Emitter PIN 2 Base PIN 3 Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated)

VCBO Collector - Base Voltage 60V
VCEO Collector - Emitter Voltage 60V
VEBO Emitter - Base Voltage 5V
IC Collector Current Continuous 600mA
PD Total Device Dissipation @ TA = 25C 600mW
Derate above 25C 3.43mW / C
PD Total Device Dissipation @ TC = 25C 3W
Derate above 25C 17.2mW / C
TJ , TSTG Operating and Storage Junction Temperature Range 65 to +200C

THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction to Ambient 292C/W
RqJC Thermal Resistance, Junction to Case 58C/w

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
SEME 2N2905A

LAB
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V(BR)CEO 1
Collector Emitter Breakdown Voltage IC = 10mA IB = 0 60 V
V(BR)CBO Collector Base Breakdown Voltage IC = 10mA IE = 0 60 V
V(BR)EBO Emitter Base Breakdown Voltage IE = 10mA IC = 0 5 V
ICEX Collector Cut-off Current VCE = 30V VBE = 0.5V 50 nA
IE = 0 VCB = 50V 0.01
ICBO Collector Cut-off Current m A
TA = 150C 10
IB Base Current VCE = 30V VBE = 0.5V 50 nA
ON CHARACTERISTICS
IC = 150mA IB = 15mA 0.4
VCE(sat)1 Collector Emitter Saturation Voltage V
IC = 500mA IB = 50mA 1.6
IC = 150mA IB = 15mA 1.3
VBE(sat) Base Emitter Saturation Voltage V
IC = 500mA IC = 50mA 2.6
IC = 0.1mA VCE = 10V 75
IC = 1mA VCE = 10V 100
hFE DC Current Gain IC = 10mA VCE = 10V 100
IC = 150mA VCE = 10V 1 100 300
IC = 500mA VCE = 10V 1
50
SMALL SIGNAL CHARACTERISTICS
IC = 50mA VCE = 20V
fT Transition Frequency 2 200 MHz
f = 100MHz
VCB = 10V IE = 0
Cob Output Capacitance 8 pF
f = 1.0MHz
VBE = 2V IC = 0
Cib Input Capacitance 30 pF
f = 1.0MHz
SWITCHING CHARACTERISTICS
ton TurnOn Time VCC = 30V 26 45
td Delay Time IC = 150mA 6 10 ns
tr Rise Time IB1 = 15mA 20 40
toff TurnOff Time VCC = 6V 70 100
ts Storage Time IC = 150mA 50 80 ns
tf Fall Time IB1 = IB2 = 15mA 20 30

NOTES:
1) Pulse test: tp 300ms , d 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk