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SEME 2N2905A

LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
HIGH SPEED
7.75 (0.305)
8.51 (0.335) MEDIUM POWER
PNP SWITCHING TRANSISTOR
4.19 (0.165)
4.95 (0.195)

0.89 max.
12.70
(0.500)
(0.035) FEATURES
min. 7.75 (0.305)
8.51 (0.335)
dia. • SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
5.08 (0.200)
• HIGH SPEED SATURATED SWITCHING
typ.
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
2.54
2 (0.100)
1 3 • CECC SCREENING OPTIONS
0.66 (0.026)
1.14 (0.045) • SPACE QUALITY LEVELS OPTIONS
0.71 (0.028)
0.86 (0.034)

45˚

TO39 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO Collector - Base Voltage –60V
VCEO Collector - Emitter Voltage –60V
VEBO Emitter - Base Voltage –5V
IC Collector Current Continuous 600mA
PD Total Device Dissipation @ TA = 25°C 600mW
Derate above 25°C 3.43mW / °C
PD Total Device Dissipation @ TC = 25°C 3W
Derate above 25°C 17.2mW / °C
TJ , TSTG Operating and Storage Junction Temperature Range –65 to +200°C

THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction to Ambient 292°C/W
RqJC Thermal Resistance, Junction to Case 58°C/w

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

5V –50 nA ON CHARACTERISTICS IC = –150mA IB = –15mA –0.6 IC = –150mA IB = –15mA –1.uk .6 IC = –0.uk Website: http://www.3 VBE(sat) Base – Emitter Saturation Voltage V IC = –500mA IC = –50mA –2. Prelim.5V –50 nA IE = 0 VCB = –50V –0. Typ. d £ 2% 2) fT is defined as the frequency at which hFE extrapolates to unity. Fax +44(0)1455 552612. Semelab plc.1mA VCE = –10V 75 IC = –1mA VCE = –10V 100 hFE DC Current Gain IC = –10mA VCE = –10V 100 — IC = –150mA VCE = –10V 1 100 300 IC = –500mA VCE = –10V 1 50 SMALL SIGNAL CHARACTERISTICS IC = –50mA VCE = –20V fT Transition Frequency 2 200 MHz f = 100MHz VCB = –10V IE = 0 Cob Output Capacitance 8 pF f = 1.co.0MHz VBE = –2V IC = 0 Cib Input Capacitance 30 pF f = 1.4 VCE(sat)1 Collector – Emitter Saturation Voltage V IC = –500mA IB = –50mA –1. Max.semelab.01 ICBO Collector Cut-off Current m A TA = 150°C –10 IB Base Current VCE = –30V VBE = –0. Telephone +44(0)1455 556565.co. Unit OFF CHARACTERISTICS V(BR)CEO 1 Collector – Emitter Breakdown Voltage IC = –10mA IB = 0 –60 V V(BR)CBO Collector – Base Breakdown Voltage IC = –10mA IE = 0 –60 V V(BR)EBO Emitter – Base Breakdown Voltage IE = –10mA IC = 0 –5 V ICEX Collector Cut-off Current VCE = –30V VBE = –0.SEME 2N2905A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. 6/99 E-mail: sales@semelab.0MHz SWITCHING CHARACTERISTICS ton Turn–On Time VCC = –30V 26 45 td Delay Time IC = –150mA 6 10 ns tr Rise Time IB1 = –15mA 20 40 toff Turn–Off Time VCC = –6V 70 100 ts Storage Time IC = –150mA 50 80 ns tf Fall Time IB1 = IB2 = –15mA 20 30 NOTES: 1) Pulse test: tp £ 300ms .