Sharif College of Engineering and Technology

Department of Electrical Engineering
Experiment-4:

Study of Drain and Transfer characteristics of FET
amplifier in CS Configuration
Apparatus:
JFET(BFW-10 / 2N4392)
Resistors (100kΩ and 100Ω)
Regulated DC Power Supply
Bread Board
Digital Ammeter
Digital Voltmeter
Connecting Wires

Procedure:
1. Connect the circuit as shown in Figure using Proteus “ISIS” software.

2. To plot the drain characteristics, keep VGS constant at 0V.
3. Vary the VDD and observe the values of VDS and ID.
4. Repeat the above steps (Step 2 and 3) for different values of VGS at -1V and
-2V.
5. To plot transfer characteristics, keep VDS constant at 0.5V.
6. Vary VGG and observe values of VGS and ID.
7. Repeat step 6 and 7 for different values of VDS at 1V and 1.5V.
Sharif College of Engineering and Technology
Department of Electrical Engineering
8. From drain characteristics, calculate the value of drain resistance (rd) by
using the formula
rd = ΔVDS/ΔID
9. From transfer characteristics, calculate the value of trans-conductance (gm)
by using the formula
gm = ΔID/ΔVGS
10. Amplification factor (µ) = drain resistance (rd) x Trans-conductance (gm)
µ = ΔVDS/ΔVGS
11. Assemble the circuit on Bread Board.
12. Repeat all the procedure from step 2 to 10 on physical circuit.
13. Note down all the readings for simulation and physical circuit.
14. Plot their graphs.
Note
• While doing the experiment do not exceed the ratings of FET, this can
damage it.
• Connect voltmeter and ammeter in correct polarities as shown in figure
• Do not power the circuit before ensuring that all connections are correctly
done.

Observations:
For Simulations
• Drain Characteristics:

S.No VGS = 0V VGS = -1V VGS = -2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)
Sharif College of Engineering and Technology
Department of Electrical Engineering

• Transfer Characteristics:

S.No VDS = 0.5V VDS = 1V VDS = 1.5V

VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(ma)

Drain Characteristics and Transfer Characteristics Graph:
Sharif College of Engineering and Technology
Department of Electrical Engineering
For Hardware

• Drain Characteristics:

S.No VGS = 0V VGS = -1V VGS = -2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

• Transfer Characteristics:

S.No VDS = 0.5V VDS = 1V VDS = 1.5V

VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(Ma)
Sharif College of Engineering and Technology
Department of Electrical Engineering
Drain Characteristics and Transfer Characteristics Graph:

Results:
1. The drain resistance (rd), trans-conductance (gm) and amplification factor
(µ) of the given FET are calculated to be
i. Drain Resistance (rd) _____________________
ii. Trans-Conductance (gm) __________________
iii. Amplification Factor (µ)__________________
Sharif College of Engineering and Technology
Department of Electrical Engineering
Conclusion:
Write down the summary, general observation and conclusion about the results
obtained in this experiment. Compare your practical results with hand calculated
results and simulated results.

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Sharif College of Engineering and Technology
Department of Electrical Engineering