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AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to
AO4800
30V
Dual N-Channel MOSFET
General Description
Product Summary
The AO4800 uses advanced trench technology to provide
V
30V
DS
excellent R DS(ON) and low gate charge. The two MOSFETs
I D (at V GS =10V)
6.9A
make a compact and efficient switch and synchronous
R DS(ON) (at V GS =10V)
< 27m
rectifier combination for use in buck converters.
R DS(ON) (at V GS = 4.5V)
< 32m
R DS(ON) (at V GS = 2.5V)
< 50m
100% UIS Tested
100% R g Tested
SOIC-8
D2
D1
Top View
Bottom View
Top View
S2
D2
1
8
G2
D2
2
7
S1
D1
3
6
G1
D1
G2
4
5
G1
S1
S2
Pin1
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Volta g e
V
30
V
DS
Gate-Source Voltage
V
±12
V
GS
T A =25°C
6.9
Continuous Drain
I
D
Current
T A =70°C
5.8
A
Pulsed Drain Current C
I
40
Avalanche Current C
DM
I AS , I AR
E AS , E AR
14
A
Avalanche energy L=0.1mH C
10
mJ
T A =25°C
2
P
W
D
Power Dissipation B
T A =70°C
1.3
Junction and Storage Temperature Range
T , T
-55 to 150
°C
J
STG
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
t
≤ 10s
48
62.5
°C/W
Maximum Junction-to-Ambient A D
Steady-State
R JA
R JL
74
90
°C/W
Maximum Junction-to-Lead
Steady-State
32
40
°C/W
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Electrical Characteristics (T J =25°C unless otherwise noted)

 

Symbol

Parameter

Conditions

 

Min

Typ

Max

Units

 

STATIC PARAMETERS

 
 

BV DSS

Drain-Source Breakdown Voltage

I D =250 A, V GS =0V

 

30

   

V

I

 

Zero Gate Voltage Drain Current

V DS =30V, V GS =0V

     

1

 

DSS

T J =55°C

   

5

A

I

GSS

Gate-Body leakage current

V DS =0V, V GS = ±12V

     

100

nA

 

V

GS(th)

Gate Threshold Voltage

V DS =V GS I D =250 A

 

0.7

1.1

1.5

V

I

D(ON)

On state drain current

V GS =4.5V, V DS =5V

 

25

   

A

     

V GS =10V, I D =6.9A

   

17.8

27

 

R DS(ON)

Static Drain-Source On-Resistance

T J =125°C

 
  • 28 40

 

m

V GS =4.5V, I D =6A

     
  • 19

32

m

   

V GS =2.5V, I D =5A

     
  • 24

50

m

   

g FS

Forward Transconductance

V DS =5V, I D =5A

     
  • 33 S

 
 

V

SD

Diode Forward Voltage

I S =1A,V GS =0V

   

0.7

1

V

I

S

Maximum Body-Diode Continuous Current

     

2.5

A

 

DYNAMIC PARAMETERS

 
 

iss

  • C Input Capacitance

   

630

 

pF

 

oss

  • C Output Capacitance

V GS =0V, V DS =15V, f=1MHz

   
  • 75 pF

 
 
  • C rss

Reverse Transfer Capacitance

   
  • 50 pF

 
 

R g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

1.5

 
  • 3

4.5

 
 

SWITCHING PARAMETERS

 
 

Q g

Total Gate Charge

     
  • 6 nC

7

 
   

Q gs

Gate Source Charge

V GS =4.5V, V DS =15V, I D =6.9A

   
  • 1.3 nC

 
   

Q gd

Gate Drain Charge

   
  • 1.8 nC

 
 

t D(on)

Turn-On DelayTime

   

3

 

ns

 

t r

Turn-On Rise Time

V GS =10V, V DS =15V, R L =2.2 ,

 

2.5

 

ns

 

t D(off)

Turn-Off DelayTime

R

GEN =3

 

25

 

ns

 

t f

Turn-Off Fall Time

   

4

 

ns

 

t rr

Body Diode Reverse Recovery Time

I F =5A, dI/dt=100A/ s

     
  • 8.5 ns

 
   

Q rr

Body Diode Reverse Recovery Charge

I F =5A, dI/dt=100A/ s

     
  • 2.6 nC

 
  • A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

value in any given application depends on the user's specific board design.

  • B. The power dissipation P D is based on T J(MAX) =150°C, using 10s junction-to-ambient thermal resistance.

  • C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep

initialT J =25°C.

  • D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.

  • E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.

  • F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 10V 3V 35 4.5V 30 25 2.5V 20 15 10 V GS =2V 5 0
40
10V
3V
35
4.5V
30
25
2.5V
20
15
10
V
GS =2V
5
0
0
1
2
3
4
5
I D (A)

V DS (Volts) Fig 1: On-Region Characteristics (Note E)

15 V DS =5V 12 9 6 3 125°C 25°C 0 0 0.5 1 1.5 2
15
V
DS =5V
12
9
6
3
125°C
25°C
0
0
0.5
1
1.5
2
2.5
3
I
D (A)
  • V GS (Volts)

Figure 2: Transfer Characteristics (Note E)

30 25 V GS =4.5V 20 15 V GS =10V 10 0 5 10 15 20
30
25
V
GS =4.5V
20
15
V
GS =10V
10
0
5
10
15
20
R DS(ON) (m
)

I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

1.8 V GS =4.5V I D =6A 1.6 1.4 17 5 V GS =10V 1.2 2
1.8
V
GS =4.5V
I
D =6A
1.6
1.4
17
5
V
GS =10V
1.2
2
I
D =6.9A
10
1
0.8
0
25
50
75
100
125
150
175
0
Temperature (°C)
Normalized On-Resistance

Figure 4: On-Resistance vs. Junction Temperature

18

(Note E)

50 I D =6.9A 40 125°C 30 20 25 °C 10 0 2 4 6 8
50
I
D =6.9A
40
125°C
30
20
25
°C
10
0
2
4
6
8
10
R DS(ON) (m
)

V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

1.0E+01 1.0E+00 40 1.0E-01 125°C 25° C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8
1.0E+01
1.0E+00
40
1.0E-01
125°C
25° C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
I S (A)

V SD (Volts) Figure 6: Body-Diode Characteristics (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 V DS =15V I D =6.9A 4 3 2 1 0 0 2 4 6
5
V
DS =15V
I
D =6.9A
4
3
2
1
0
0
2
4
6
8
V GS (Volts)

Q g (nC) Figure 7: Gate-Charge Characteristics

1000 800 C iss 600 400 C oss 200 C rss 0 0 5 10 15
1000
800
C
iss
600
400
C
oss
200
C
rss
0
0
5
10
15
20
25
30
Capacitance (pF)

V DS (Volts) Figure 8: Capacitance Characteristics

100.0 T A =25° C T A =100°C T A =150° C 10.0 T A =125°
100.0
T A =25° C
T A =100°C
T A =150° C
10.0
T A =125° C
1.0
1
10
100
1000
I AR (A) Peak Avalanche Current

Time in avalanche, t A ( s) Figure 9: Single Pulse Avalanche capability (Note C)

100.0 10 s R DS(ON) 10.0 limited 100 s 1.0 1ms 10ms 0.1 DC T J(Max)
100.0
10 s
R DS(ON)
10.0
limited
100 s
1.0
1ms
10ms
0.1
DC
T J(Max) =150° C
T A =25° C
10s
0.0
0.01
0.1
1
10
100
I D (Amps)

V DS (Volts)

Figure 10: Maximum Forward Biased Safe Operating Area (Note F)

10000 T A =25°C 1000 100 10 1 0.00001 0.001 0.1 10 1000 Power (W)
10000
T A =25°C
1000
100
10
1
0.00001
0.001
0.1
10
1000
Power (W)

Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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AO4800

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 D=T on /T In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse T
10
D=T on /T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T J,PK =T A +P DM .Z JA .R JA
1
R JA =90° C/W
0.1
P D
0.01
Single Pulse
T on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z JA
Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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Gate Charge Test Circuit & Waveform

+ VDC + - VDC - DUT Vgs Ig
+
VDC
+
-
VDC
-
DUT
Vgs
Ig

Vds

Vgs Qg 10V Qgs Qgd
Vgs
Qg
10V
Qgs
Qgd

Charge

Resistive Switching Test Circuit & Waveforms

Vgs

RL Vds + DUT Vgs VDC Rg -
RL
Vds
+
DUT
Vgs
VDC
Rg
-

Vdd

Vds Vgs t t r d(on) t f t d(off) t on t off
Vds
Vgs
t
t r
d(on)
t f
t d(off)
t on
t off

90%

10%

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L Vds Id + Vgs Vgs VDC Rg - DUT DUT L
L
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
DUT
DUT
L
Isd Vgs
Isd
Vgs

Ig

+

  • Vdd

2 E = 1/2 LI AR AR
2
E
= 1/2 LI AR
AR

Vds

Id

Vgs

BV

DSS

  • I AR

Vdd

Vgs

Diode Recovery Test Circuit & Waveforms

  • Vdd

Vds +

Vds -