You are on page 1of 6

CAT.No.

TJ 536

 


USKB SERIES
UL File No. E142422

Summary
Bridge diodes are being required to take up less space accompanying the reduced size of electronic
equipment. In order to respond to these needs, Shindengen has developed a new package in offering a
complete lineup of bridge diodes that can be used in a wide range of power supply environments.

Features
Rectified forward current : 4AUS4KB80R, 6AUS6KB80R, 8AUS8KB80R,
with heat sink 10AUS10KB80R, 15AUS15KB80R, 30AUS30KB80R
Large current capacity of 30A with compact package

High I FSM and High Voltage

UL approved Bridge Rectifier Diodes, registered in file number E142422

Single In-Line Package


High-density mounting for improved space efficiency through the use of SIP

Application
TV, Monitor, Switching power supply, PC, Audio, Printer
CAT.No.TJ 536

RATINGS
Absolute Maximum RatingsTc=25Unless otherwise specified
Item Symbol Conditions US4KB80R US6KB80R US8KB80R Unit

Storage Temperature Tstg 55150

Operation Junction Temperature Tj 150

Maximun Reverse Voltage VRM 800 V

With heatsink 4 6 8
Tc=125 Tc=116 Tc=108
60Hz sine wave,
Average Rectified Forward Current Io A
Resistance load 2.1 2.1 2.2
Without heatsink
Ta=30 Ta=30 Ta=26
60Hz sine wave, Non-repetitive 1cycle peak value,
IFSM Tj=25
150 175 200
Peak Surge Forward Current A
245 470 575
IFSM1 Nonrepetitive, Tj=25
tp=3ms tp=1ms tp=1ms

93 112 166
Current Squared Time I2t Tj=25, Per diode
3mst8.3ms 1mst8.3ms 1mst8.3ms A2 s

Dielectric Strength Vdis Terminals to cace, AC 1 minute 2.0 kV

Mounting Torque TOR Recommended torque0.5Nm 0.8 Nm

Electrical CharacteristicsTc=25Unless otherwise specified


Forward Voltage VF Pulse measurement, Per diode MAX. 1.00 MAX. 1.00 MAX. 1.00 V
IF=2A IF=3A IF=4A

Reverse Current IR VR=800V, Pulse measurement, Per diode MAX. 10 A

jc Junction to case, With heatsink MAX. 3.5 MAX. 3.0 MAX. 2.8

Thermal Resistance jl Junction to lead, Without heatsink MAX. 5 /W

ja Junction to ambient, Without heatsink MAX. 35

Type No. US4K80R US6K80R US8K80R

Absolute Maximum RatingsTc=25Unless otherwise specified


Item Symbol Conditions US10KB80R US15KB80R US30KB80R Unit

Storage Temperature Tstg 55150

Operation Junction Temperature Tj 150

Maximun Reverse Voltage VRM 800 V

With heatsink 10 15 30
Tc=100 Tc=101 Tc=97
60Hz sine wave,
Average Rectified Forward Current Io A
Resistance load 2 2 2.1
Without heatsink
Ta=28 Ta=30 Ta=27
60Hz sine wave, Nonrepetitive 1cycle peak value,
IFSM Tj=25
150 200 350
Peak Surge Forward Current A
245 330 1000
IFSM1 Non-repetitive, Tj=25
tp=3ms tp=3ms tp=1ms

93 166 510 A2s


Current Squared Time I2 t Tj=25, Per diode
3mst8.3ms 3mst8.3ms 1mst8.3ms

Dielectric Strength Vdis Terminals to cace, AC 1 minute 2.0 kV

Mounting Torque TOR Recommended torque0.5Nm 0.8 Nm

Electrical CharacteristicsTc=25Unless otherwise specified


Forward Voltage VF Pulse measurement, Per diode MAX. 1.10 MAX. 1.10 MAX. 1.10 V
IF=5A IF=7.5A IF=15A

Reverse Current IR VR=800V, Pulse measurement, Per diode MAX. 10 A

jc Junction to case, With heatsink MAX. 2.5 MAX. 1.5 MAX. 0.8

Thermal Resistance jl Junction to lead, Without heatsink MAX. 5 /W

ja Junction to ambient, Without heatsink MAX. 35

Type No. U10K80R U15K80R U30K80R


CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US4KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
30 10 200
20 Pulse measurement per diode

IFSM
Io

Forward Power DissipationPFW

Peak Surge Forward CurrentI FSMA


tp
10 8 T D=tp/T 8.3ms 8.3ms
Forward CurrentIFA

Tc=150TYP 150 1cycle

5
Tc= 25TYP Tj=150 SIN nonrepetitive
sine wave
Tj=25

6
2
100

1 4

0.5
50
2
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 4 5 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 7 500
heatsink Tcsensing point
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

Sine wave on glassepoxy substrate Sine wave

I tpFSM
Tc

Peak Surge Forward CurrentI FSM1A


R-load R-load 400
Free in air 6 With heatsink
2.5


P.C.B
300
SIN tp
5 nonrepetitive
2 soldering land 3mm Tj=25 sine wave

SIN 200
4
Tj=150
1.5
3

1
2 100
90
80
0.5 1 70
60
0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms

US6KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
30 14 250
20 Pulse measurement per diode
IFSM
Io
Peak Surge Forward CurrentI FSMA
Forward Power DissipationPFW

12 tp
10 T D=tp/T SIN 200 8.3ms 8.3ms
Tc=150TYP 1cycle
Forward CurrentIFA

Tc= 25TYP 10 nonrepetitive


5 Tj=150 sine wave
Tj=25
150
8
2

6
1 100

0.5 4

50
2
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1 2 3 4 5 6 7 8 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 10 1000
on glassepoxy substrate heatsink Tcsensing point
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

Sine wave Sine wave


I tpFSM
Peak Surge Forward CurrentI FSM1A

R-load R-load Tc
Free in air With heatsink
2.5

P.C.B 8
500
SIN tp
nonrepetitive
2 soldering land 3mm Tj=25 sine wave
SIN
6

1.5
200
Tj=150
4
1

100
2
0.5

0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms


CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US8KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 20 300
Pulse measurement per diode

IFSM
Io

Forward Power DissipationPFW

Peak Surge Forward CurrentI FSMA


20 tp 250
T D=tp/T 8.3ms 8.3ms
SIN
Forward CurrentIFA

Tc=150TYP 15 1cycle
Tc= 25TYP Tj=150 nonrepetitive
200 sine wave
Tj=25
5

10 150
2

1
100
5
50
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 2 4 6 8 10 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 14 1000
heatsink Tcsensing point
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

on glassepoxy substrate
Sine wave Sine wave

I tpFSM
Tc

Peak Surge Forward CurrentI FSM1A


R-load R-load
Free in air 12 With heatsink
2.5


P.C.B
SIN 500
Tj=25 tp
10 nonrepetitive
soldering land 3mm sine wave
2
SIN
8
1.5 Tj=150
200
6

1
4
100
0.5 2

0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms

US10KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 30 200
Pulse measurement per diode
IFSM
Peak Surge Forward CurrentI FSMA
Forward Power DissipationPFW

Io

20 25 tp
T D=tp/T 8.3ms 8.3ms
150
Forward CurrentIFA

10 SIN
1cycle
nonrepetitive
Tc=150TYP Tj=150 sine wave
20 Tj=25
5 Tc= 25TYP

2 15 100

1
10

0.5 50
5
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 2 4 6 8 10 12 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 16 500
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

on glassepoxy substrate heatsink Tcsensing point


Sine wave Sine wave
I tpFSM
Peak Surge Forward CurrentI FSM1A

Tc
R-load R-load 400
Free in air 14 With heatsink
2.5

P.C.B
300
12 tp
SIN nonrepetitive
2 soldering land 3mm SIN Tj=25
sine wave
10
200
Tj=150
1.5 8

6
1
100
4 90
80
0.5
2 70
60
0 0 50
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms


CAT.No.TJ 536

CHARACTERISTIC DIAGRAMS
US15KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
50 40 250

Pulse measurement per diode

Forward Power DissipationPFW

IFSM
Peak Surge Forward CurrentI FSMA
Io
35
20 tp
T D=tp/T SIN 200
Forward CurrentIFA

8.3ms 8.3ms
Tc=150TYP 30
10 1cycle
Tc= 25TYP nonrepetitive
Tj=150
sine wave
Tj=25
5 25
150

2 20

100
1 15

0.5 10
50

0.2 5

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 24 1000
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

on glassepoxy substrate heatsink Tcsensing point


Sine wave Sine wave

I tpFSM
Peak Surge Forward CurrentI FSM1A
Tc
Tc
R-load R-load
Free in air 20 With heatsink


2.5 500
P.C.B
tp
SIN Tj=25 nonrepetitive

2 soldering land 3mm 16 SIN sine wave

200
Tj=150
1.5 12

100

1 8

50
0.5 4

0 0 20
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms

US30KB80R
Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability
100 80 500

Pulse measurement per diode


Peak Surge Forward CurrentI FSMA

50
Forward Power DissipationPFW

IFSM
Io
70
tp
Tc=150TYP T D=tp/T SIN 400 8.3ms 8.3ms
20 60
Forward CurrentIFA

Tc= 25TYP 1cycle


Tj=150 nonrepetitive
10 sine wave
Tj=25
50
300
5
40
2
200
30
1

0.5 20
100
10
0.2

0.1 0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 1 2 5 10 20 50 100

Forward VoltageVFV Average Rectified Forward CurrentIoA Number of Cyclescycle

Derating Curve Ta-Io Derating Curve Tc-Io Peak Surge Forward Current Capability
3 50 2000
Average Rectified Forward CurrentIoA

Average Rectified Forward CurrentIoA

on glassepoxy substrate heatsink Tcsensing point


Sine wave Sine wave
Peak Surge Forward CurrentI FSM1A

I tpFSM

Tc
R-load R-load
Free in air With heatsink
2.5

P.C.B 40
1000
SIN tp
Tj=25 nonrepetitive
soldering land 3mm sine wave
2 SIN
30
500 Tj=150
1.5

20
1

10 200
0.5

0 0 100
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 1 2 3 4 5 6 7 8.3

Ambient TemperatureTa Case TemperatureTc Pulse Widetpms


CAT.No.TJ 536

OUTLINE DIMENSIONS


  

22.1 0.3 C3 3.45 0.2

US4K 80R
0.15
2

Type No.
18.5 0.3

R1.8
9771
10 0.15

3.6 0.2

0.1 Date code

Control No.

2.050.2
Polarity
0.3


2.50.2
2


0.2
2.2
18.6 0.8

1 2 3 4

0.1


1.1 0.1 0.5 0.05

5.08 0.3 5.08 0.3 5.08 0.3

1 2 3 4
Unit

The level of quality of our products is intended for use in standard applications.OA and other office equipment, communication equipment, measuring instruments,
home appliances, industrial equipment, etc.In the case these products are to be used in equipment or devices in which failure or malfunction of a product may
directly affect human life or healthNuclear power control equipment, aerospace equipment, devices and systems for preserving life, transportation equipment,
traffic control equipment, safety control devices, fire prevention/anti-theft equipment, combustion control equipment, etc., always make sure to contact us in
advance.
All specifications are subject to change without notice.
Please contact us for the latest specifications before you order.
Please use our products after confirming the details in the specifications and the application manuals.

U.S.A
Shindengen America, Inc.
Head Office
161 Plaza La Vista Road, Camarillo, CA 93010 U.S.A.
Phone:+1-805-445-8420 Fax:+1-805-445-8421
Chicago Office
2333 Waukegan Road, Suite 170 Bannockburn, IL. 60015 U.S.A.
Phone:+1-847-444-1363 Fax:+1-847-444-0654
Europe
Shindengen UK Ltd.
Head Office
Howard Court, 12 Tewin Road,
Welwyn Garden City, Hertfordshire. AL7 1BW U.K.
Phone:+44-1707-332992 Fax:+44-1707-332955
German Branch
Kapell Strasse 6, D-40479, Dusseldorf, Germany
Phone:+49-211-4919680 Fax:+49-211-4986499
Asia
Shindengen Singapore PTE Ltd.
750D, Chai Chee Road, #05-01,
Technopark@Chai Chee, Singapore 469004
Phone:+65-6445-0082 Fax:+65-6445-6089
ShindengenH.K.Co., Ltd.
Head Office
Suite 3206, 32/F, Tower 1, The Gateway, 25 Canton Road, TST,
Kowloon, Hong Kong.
Phone:+852-2317-1884 Fax:+852-2314-8561
Taipei Branch
Room N1010, 10F, Chia-Hsin Bldg. 2 No. 96, Sec. 2,
Chung Shan N. RD. Taipei, Taiwan R.O.C.
Phone:+886-2-2560-3990 Fax:+886-2-2560-3991
Shanghai Liaison Office
W504 Sun Plaza, No.88 Xian xia Road, Shanghai, 200336, China
Phone:+86-21-6270-1173 Fax:+86-21-6270-0419
Shindengen Electric Mfg. Co., Ltd.
Head Office
New-Ohtemachi Bldg., 2-1 Ohtemachi 2-chome, Chiyoda-ku,
Tokyo 100-0004, Japan
Phone : +81-3-3279-4545, 4546, 4547
Fax : +81-3-3279-4519
Seoul Office
Korea City Air-Terminal Bldg. 606, 159-6, Samsung-Dong, ELECTRIC MFG. CO., LTD.
URL http://www.shindengen.co.jp
Kangnam-ku, Seoul, Korea
Phone:+82-2-551-1431 Fax:+82-2-551-1432

07600NQ