IRF740, SiHF740

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 400 Available
• Repetitive Avalanche Rated
RDS(on) (Ω) VGS = 10 V 0.55
• Fast Switching RoHS*
Qg (Max.) (nC) 63 COMPLIANT

Qgs (nC) 9.0 • Ease of Paralleling
Qgd (nC) 32 • Simple Drive Requirements
Configuration Single • Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The TO-220AB package is universally preferred for all
S
commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220AB contribute to its
N-Channel MOSFET wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF740PbF
Lead (Pb)-free
SiHF740-E3
IRF740
SnPb
SiHF740

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 10
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 6.3 A
Pulsed Drain Currenta IDM 40
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 520 mJ
Repetitive Avalanche Currenta IAR 10 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).
c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91054 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

pF Reverse Transfer Capacitance Crss f = 1. 120 - Total Gate Charge Qg . 24 - Between lead. . Gate-Source Charge Qgs VGS = 10 V . 3. 25 Zero Gate Voltage Drain Current IDSS μA VDS = 320 V. dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr . UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V. 21-Mar-11 This datasheet is subject to change without notice. 62 Case-to-Sink. Flat. 1.1 Ω. 6 and 13b Gate-Drain Charge Qgd . unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. see fig. D Internal Drain Inductance LD . V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C.com Document Number: 91054 2 S11-0507-Rev. Greased Surface RthCS 0. 4. 0. . IS = 10 A. 7. MAX.25") from nH package and center of G Internal Source Inductance LS die contact .8 8. ID = 250 μA 2. . ID = 6. C.2 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. S Dynamic Input Capacitance Ciss VGS = 0 V.0 V Gate-Source Leakage IGSS VGS = ± 20 V . . UNIT Maximum Junction-to-Ambient RthJA . .0 SPECIFICATIONS (TJ = 25 °C. IF = 10 A. V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS. VGS = 0 V . . . 27 - ns Turn-Off Delay Time td(off) Rg = 9.0 Ab .5 - 6 mm (0.0 Ab 5. 330 .0 nC see fig. VGS = 0 Vb .5 - S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol D . ID = 1 mA . Pulse width ≤ 300 μs. 10 showing the A Pulsed Diode Forward Currenta ISM integral reverse G .49 .vishay. 14 - Rise Time tr VDD = 200 V. . MAX.0 . 5 . 370 790 ns TJ = 25 °C. TYP. 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6. b. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. . SiHF740 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP.8 . 63 ID = 10 A.55 Ω Forward Transconductance gfs VDS = 50 V. 0.50 . RD = 20 Ω.vishay.n junction diode S Body Diode Voltage VSD TJ = 25 °C. ± 100 nA VDS = 400 V. VGS = 0 V. www.IRF740. °C/W Maximum Junction-to-Case (Drain) RthJC . see fig.com/doc?91000 . Repetitive rating. pulse width limited by maximum junction temperature (see fig. . ID = 250 μA 400 . . 40 p . 32 Turn-On Delay Time td(on) . SET FORTH AT www. TJ = 125 °C . . duty cycle ≤ 2 %. 4. 9. . . 50 - Fall Time tf . VDS = 320 V.0 MHz.0 V Body Diode Reverse Recovery Time trr . ID = 10 A . 2. 11). 1400 - Output Capacitance Coss VDS = 25 V. 10b .

Drain Current (A) 101 ID.com/doc?91000 . 4 .com S11-0507-Rev.20 0 20 40 60 80 100 120 140 160 91054_02 VDS. SiHF740 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS.0 V 6. TC = 25 °C Fig.0 10-1 100 101 .Normalized On-Resistance vs.5 V 4. SET FORTH AT www.5 Bottom 4.vishay. unless otherwise noted) VGS Top 15 V 10 V 150 °C 8.5 V 20 µs Pulse Width 20 µs Pulse Width TC = 25 °C VDS = 50 V 10-1 10-1 100 101 4 5 6 7 8 9 10 91054_01 VDS. IRF740. Drain-to-Source Voltage (V) 91054_03 VGS.5 20 µs Pulse Width TC = 150 °C 0. 1 .0 (Normalized) 6.0 V 101 ID. Junction Temperature (°C) Fig. Gate-to-Source Voltage (V) Fig. 3 . Drain Current (A) 7.5 V 100 100 4.5 V 5.0 V 25 °C 5. 2 .5 V 5.0 V 2.0 RDS(on). Drain Current (A) 7.5 8. 21-Mar-11 3 This datasheet is subject to change without notice. Drain-to-Source Voltage (V) 91054_04 TJ. Temperature Document Number: 91054 www.0 V Bottom 4.40 . TC = 150 °C Fig.Typical Transfer Characteristics 3.0 V ID.0 V 5.5 V 100 1.0 0.0 V 1. Drain-to-Source On Resistance VGS ID = 10 A Top 15 V VGS = 10 V 101 10 V 2.Typical Output Characteristics.Typical Output Characteristics.vishay.60 . C.

Drain-to-Source Voltage (V) Fig. Drain Current (A) VDS = 200 V 102 5 VDS = 80 V 10 µs 12 2 10 100 µs 5 8 2 1 ms 1 10 ms 4 5 TC = 25 °C For test circuit TJ = 150 °C 2 see figure 13 Single Pulse 0 0.Typical Gate Charge vs.vishay.10 1. 6 . Total Gate Charge (nC) 91054_08 VDS.30 1. 5 .1 2 5 2 5 2 5 2 5 0 15 30 45 60 75 0.com Document Number: 91054 4 S11-0507-Rev.1 1 10 102 103 91054_06 QG.50 91054_05 VDS.IRF740. Source-to-Drain Voltage (V) Fig.90 1. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. SiHF740 Vishay Siliconix 2500 VGS = 0 V.com/doc?91000 .Typical Source-Drain Diode Forward Voltage 20 103 ID = 10 A VGS. Drain-to-Source Voltage Fig. Reverse Drain Current (A) 150 °C Crss = Cgd 2000 Coss = Cds + Cgd 101 Capacitance (pF) 25 °C 1500 Ciss 1000 100 Coss 500 Crss VGS = 0 V 0 10-1 100 101 0. f = 1 MHz Ciss = Cgs + Cgd. Drain-to-Source Voltage (V) 91054_07 VSD. 8 . Cds Shorted ISD.Maximum Safe Operating Area www. SET FORTH AT www. C. Drain-to-Source Voltage Fig.50 0. 7 . 21-Mar-11 This datasheet is subject to change without notice.70 0.Typical Capacitance vs. Gate-to-Source Voltage (V) 5 VDS = 320 V Operation in this area limited 16 2 by RDS(on) ID.vishay.

2 0. Drain Current (A) + .Switching Time Test Circuit 2 0 VDS 25 50 75 100 125 150 90 % 91054_09 TC. Rectangular Pulse Duration (S) Fig. IRF740. D = t1/t2 2.T. SiHF740 Vishay Siliconix RD 10 VDS VGS D.Maximum Effective Transient Thermal Impedance.1 0. 21-Mar-11 5 This datasheet is subject to change without notice. 10a . Case Temperature (°C) Fig. Case Temperature 10 % VGS td(on) tr td(off) tf Fig. 8 RG ID.1 1 10 91054_11 t1.0.5 PDM 0. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 10-3 10-2 0.com S11-0507-Rev. SET FORTH AT www.com/doc?91000 .vishay.Maximum Drain Current vs. C. 11 .02 Single Pulse Notes: 0. 9 .Switching Time Waveforms 10 Thermal Response (ZthJC) 1 0 . Duty Factor.VDD 6 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.U.01 (Thermal Response) 1. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. 10b .1 % 4 Fig.vishay. Junction-to-Case Document Number: 91054 www.05 t2 0.1 t1 0.

12a .2 µF 0. Single Pulse Energy (mJ) 1000 5.com/doc?91000 . C.T. SET FORTH AT www. VDS IAS 10 V tp 0.3 A Bottom 10 A 800 600 400 200 VDD = 50 V 0 25 50 75 100 125 150 91054_12c Starting TJ. QG 50 kΩ 10 V 12 V 0.IRF740. 21-Mar-11 This datasheet is subject to change without notice. Drain Current Current regulator Same type as D. 13a . THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS. - VG VGS 3 mA Charge IG ID Current sampling resistors Fig.Basic Gate Charge Waveform Fig.T.Maximum Avalanche Energy vs.U.5 A EAS.vishay. 12c . 12b .01 Ω IAS Fig. 13b .U.Unclamped Inductive Waveforms 1200 ID Top 4.U.Unclamped Inductive Test Circuit Fig.com Document Number: 91054 6 S11-0507-Rev.vishay. SiHF740 Vishay Siliconix L VDS VDS Vary tp to obtain tp required IAS VDD RG D.3 µF QGS QGD + VDS D.Gate Charge Test Circuit www. Junction Temperature (°C) Fig.T + V DD .

Period VGS = 10 Va D. part marking. 21-Mar-11 7 This datasheet is subject to change without notice. SET FORTH AT www.U.U. • Low stray inductance • Ground plane • Low leakage inductance current transformer - + . SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D. and reliability data. C. For related documents such as package/tape drawings.com S11-0507-Rev. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS.vishay.U.T.T. .T.com/ppg?91054.W. Document Number: 91054 www. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. IRF740.vishay. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a.U. lSD waveform Reverse recovery Body diode forward current current dI/dt D.vishay.T.T.For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. 14 .com/doc?91000 . D= P.U. + - Rg • dV/dt controlled by Rg + • Driver same type as D. VGS = 5 V for logic level devices Fig. see www.device under test Driver gate drive Period P.W. VDD - • ISD controlled by duty factor “D” • D.

264 1 2 3 J(1) 2.192 0.139 0.624 E 9.71 0.567 L(1) L(1) 3.02 0.024 D 14. heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions.027 0.055 H(1) 6.052 inches to 0.41 2. MIN.00 0.064 inches (dimension including protrusion). MIN.183 ØP b 0.118 b(1) ECN: X15-0364-Rev.33 4.04 0.40 0.78 0.159 M* ØP 3.54 3.69 1.41 2.105 e(1) 4.vishay.392 0.92 0.85 0.526 0.65 0.115 L 13.61 0.095 0. F A 4.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM.167 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.070 H(1) c 0.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.208 F 1.96 10.155 Q 2. Package Information www.240 0.14 1. SET FORTH AT www.53 3.040 Q b(1) 1.100 0. contact: hvm@vishay.24 4.40 0.88 5.67 0.014 0.564 0. 14-Dec-15 L DWG: 6031 Note • M* = 0.045 0.com/doc?91000 .14 1.94 0.36 0. C.52 0.28 0.131 0.10 6.414 D e 2.vishay. MAX.36 14. MAX.095 0.33 15.045 0.

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