Smart Highside Power Switch
Features Product Summary
• Load dump and reverse battery protection1) VLoad dump 80 V
• Clamp of negative voltage at output Vbb-VOUT Avalanche Clamp 58 V
• Short-circuit protection Vbb (operation) 4.5 ... 42 V
• Current limitation
Vbb (reverse) -32 V
• Thermal shutdown
• Diagnostic feedback RON 38 mΩ
• Open load detection in ON-state IL(SCp) 44 A
• CMOS compatible input IL(SCr) 35 A
• Electrostatic discharge (ESD) protection IL(ISO) 11 A
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection PG-TO220-5-11 PG-TO263-5-2
• Undervoltage and overvoltage shutdown with auto-
restart and hysteresis 5
• Green Product (RoHS compliant) 5
• AEC qualified 1
Standard SMD

• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.

R bb + V bb
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
Voltage Charge pump Limit for
unclamped 5
sensor Level shifter ind. loads Temperature
Rectifier sensor
2 IN
Open load
ESD Logic detection

4 ST
Short circuit

Signal GND Load GND

1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Data Sheet 1 of 14 2010-Jan-26

.0 mA Current through status pin (DC) IST ±5.. activates the power switch in case of logical high signal 3 Vbb Positive power supply voltage..5 V Vs3) 66.ambient (free air): RthJA ≤ 75 SMD version. IN= low or high Load current (Short-circuit current. see page 4) IL self-limited A Operating temperature range Tj -40 . RL= 1.1 Ω. PROFET® BTS 432 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input.7 J Electrostatic discharge capability (ESD) VESD 2. the tab is shorted to this pin 4 ST Diagnostic feedback. 33 3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 4) Device on 50mm*50mm*1. 70µm thick) copper area for Vbb connection.+150 Power dissipation (DC) Ptot 125 W Inductive load switch-off energy dissipation. L) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 63 V Load dump protection VLoadDump = UA + Vs.+150 °C Storage temperature range Tstg -55 . +6 V Current through input pin (DC) IIN ±5..5mm epoxy PCB FR4 with 6cm2 (one layer. td= 200 ms.5 .5 V RI= 2 Ω.. device on pcb4): RthJC ≤1 K/W junction . UA = 13. low on failure 5 OUT Output to the load (Load.0 see internal circuit diagrams page 6. single pulse Tj=150 °C: EAS 1. PCB is vertical without blown air. Thermal resistance chip . Data Sheet 2 2010-Jan-26 .0 kV (Human Body Model) Input voltage (DC) VIN -0....

+150°C: Vbb(u rst) -.+150°C Slew rate on dV /dton 0.. V Ibb=40 mA Tj =25. 4. V Overvoltage hysteresis Tj =-40.+150°C Turn-on time to 90% VOUT: ton 50 160 300 µs Turn-off time to 10% VOUT: toff 10 -. Meassured without load. 0. VIN=5 V IGND -.5 V Data Sheet 3 2010-Jan-26 .1 -... 80 RL = 12 Ω. if VIN>5.2 V 6) see also VON(CL) in table of protection functions and circuit diagram page 7.. 6 -.+150°C: Vbb(under) 2. Tj =-40.. add IIN.. µA VIN=0 Operating current (Pin 1)7). TC = 85 °C Output current (pin 5) while GND disconnected or IL(GNDhigh) -.5 -...2 -. mA 5) At supply voltage increase up to Vbb= 6..+150°C Slew rate off -dV/dtoff 1 -..+150°C: Vbb(over) 42 -. 5 V/µs 70 to 40% VOUT. V Overvoltage protection 6) Tj =-40°C: Vbb(AZ) 60 -.5 V...+150°C: ∆Vbb(over) -.. 12 25 µA VIN=0 Tj=150°C: -... Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON -. Tj =-40.5 V see diagram page 12 Tj =-40.5 7. -. RL = 12 Ω. 6.4 -.Vbb(under) Overvoltage shutdown Tj =-40. 1. 18 60 Leakage output current (included in Ibb(off)) IL(off) -.2 -...5 V typ without charge pump. 1 mA GND pulled up.. VIN= 0.5 V/µs 10 to 30% VOUT. V ∆Vbb(under) = Vbb(u rst) . -.5 V Undervoltage restart of charge pump Vbb(ucp) -. RL = 12 Ω... see diagram page 7.+150°C: Vbb(on) 4. 42 V Undervoltage shutdown Tj =-40..5 V Undervoltage restart Tj =-40. 7) Add IST. 52 V Overvoltage restart Tj =-40.+25°C: Ibb(off) -....+150°C: 63 67 Standby current (pin 3) Tj=-40.+150°C: Vbb(o rst) 42 -.+150°C Operating Parameters Operating voltage 5) Tj =-40.+150°C: Undervoltage hysteresis ∆Vbb(under) -. 0. PROFET® BTS 432 E2 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = 25 °C. -. 30 38 mΩ Tj=150 °C: 55 70 Nominal load current (pin 3 to 5) IL(ISO) 9 11 -. if IST > 0.. 2. VOUT ≈Vbb . A ISO Proposal: VON = 0. Tj =-40.. 4.4 -. Tj =-40. -.

single pulse Vbb = 12 V: ELoad12 1. -. slope VON > VON(SC).3 Vbb = 24 V: ELoad24 1. ratings page 2 and circuit page 7). -. Tj =-40.Vbb 11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. °C Thermal hysteresis ∆Tjt -. Input and Status currents have to be limited (see max. K Inductive load switch-off energy dissipation10). V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -.0 Reverse battery (pin 3 to 1) 11) -Vbb -. page 10) 22 35 -. EAS -. V Thermal overload trip temperature Tjt 150 -. prior to shutdown (see td(SC) page 4) 10) While demagnetizing load inductance. 1. 400 µs min value valid only.. PROFET® BTS 432 E2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C.3 A at Vbb= -32 V through the logic heats up the device. -- Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams. 32 V Integrated resistor in Vbb line Rbb -. Ω Diagnostic Characteristics Open load detection current Tj=-40 °C: IL (OL) 2 -. approx.+150°C: td(SC) 80 -. 2 VON(CL) EAS= 1/2 * L * IL * ( ). Time allowed under these condition is dependent on the size of the heatsink. 900 mA (on-condition) Tj=25.150°C: 2 -. -. -. 750 8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range.3 -. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). 44 -- Tj =+150°C: 24 -. 120 -. A Short circuit shutdown delay after input pos. VON(CL) . 8. 74 A Tj =25°C: -. dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt. see diagram page 8. IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: -. 9) Short circuit current limit for max. IL= 30 mA VON(CL) -.7 J Tj Start = 150 °C. 10 -.. Protection functions are not designed for continuous repetitive operation. 58 -. duration of 400 µs. if input "low" time exceeds 30 µs Output clamp (inductive load switch off) at VOUT = Vbb – VON(CL). Reverse current IGND of ≈ 0. Vbb = 12 V unless otherwise specified min typ max Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9). Data Sheet 4 2010-Jan-26 .

. PROFET® BTS 432 E2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C.4 V Tj =-40.. 2.0 -....6 mA: VST(high) 5. V Tj =-40. 30 µA On state input current (pin 2) VIN = 3.4 6. V Off state input current (pin 2) VIN = 0. IST = +1.+150°C.1 -.+150°C: Input threshold hysteresis ∆ VIN(T) -.5 V: IIN(on) 10 25 50 µA Status invalid after positive input slope td(ST SC) 80 200 400 µs (short circuit) Tj=-40 ..4 12) If a ground resistor RGND is used. 0. 0. V ST low voltage Tj =-40.. Vbb = 12 V unless otherwise specified min typ max Input and Status Feedback12) Input turn-on threshold voltage VIN(T+) 1. Data Sheet 5 2010-Jan-26 . -.. +150°C: Status output (open drain) Zener limit voltage Tj =-40. 1600 µs (open load) Tj=-40 . -.5 -.4 V: IIN(off) 1 -.+150°C. add the voltage drop across this resistor...+150°C: Input turn-off threshold voltage VIN(T-) 1. +150°C: Status invalid after positive input slope td(ST) 350 -. IST = +1.6 mA: VST(low) -.5 -.

ESD zener diodes are not designed for bb VOUT R continuous current GND 13) Power Transistor off. L L H voltage H L H Overvoltage L L H H L H L = "Low" Level H = "High" Level Terms Input circuit (ESD protection) Ibb R 3 I IN I IN Vbb IN ESD- 2 IL VON ZDI1 ZDI2 I OUT I I ST PROFET 5 GND ST 4 V VST GND IN V 1 IGND ZDI1 6. high impedance 14) Low resistance short Vbb to output may be detected by no-load-detection Data Sheet 6 2010-Jan-26 .1 V typ. Output Status Level level 432E2 Normal L L H operation H H H Open load L 13) H H H L Short circuit L L H to GND H L L Short circuit L H H to Vbb H H H (L14) Overtem. PROFET® BTS 432 E2 Truth Table Input.. L L L perature H L L Under.

1 V typ. Due to VGND >0.3 V typ.. VZ +Rbb*40 mA = 67 V typ. Logic V ZD OUT GND R ST ST GND PROFET ESD-Zener diode: 6. Data Sheet 7 2010-Jan-26 . protection +5V + V bb R ST(ON) V R bb ST Z R IN IN ESD. PROFET® BTS 432 E2 Status output Overvolt. add Short Circuit detection RGND. RIN. IN high V + V bb ON OUT Logic Short circuit detection VON unit ON OUT Logic Open load Inductive and overvoltage output clamp unit detection + V bb V Z V ON GND disconnect OUT GND 3 Vbb VON clamped to 58 V typ. ESD zener diodes are not R GND designed for continuous current Signal GND Rbb = 120 Ω typ. RST for extended protection Fault Condition: VON > 8. no VST = low signal available.. In case of Input=high is VOUT ≈ VIN . RST(ON) < 250 Ω at 1. and reverse batt. max 5 mA.VIN(T+) ... IN 2 PROFET OUT 5 ST 4 GND V V V 1 V bb IN ST GND Any kind of load. IN high Open-load detection + V bb ON-state diagnostic condition: VON < RON * IL(OL).6 mA.

no VST = low signal available. PROFET® BTS 432 E2 GND disconnect with GND pull up 3 3 Vbb high Vbb IN IN 2 2 PROFET OUT PROFET OUT 5 5 ST ST 4 4 GND GND 1 1 V V V V IN ST V bb GND bb Any kind of load. If VGND > VIN .ER. 2 ELoad < EL. Vbb disconnect with charged inductive Inductive Load switch-off energy load dissipation E bb 3 E AS high Vbb ELoad IN 2 Vbb IN PROFET OUT 5 PROFET OUT ST 4 = GND ST EL 1 GND ER V bb Energy dissipated in PROFET EAS = Ebb + EL . EL = 1/2 * L * I L Data Sheet 8 2010-Jan-26 .VIN(T+) device stays off Due to VGND >0.

No latch between turn on and td(SC). protection against loss of ground Type BTS 432E2 Logic version E Overtemperature protection Tj >150 °C. Reseted by a) Input low. So the device remains latched unless Vbb < VON(SC) (see page 4). load dump and reverse battery protection . ESD protection. latch function15)16) Tj >150 °C. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). in ON-state with sensing voltage drop across X power transistor Undervoltage shutdown with auto restart X Overvoltage shutdown with auto restart X Status feedback for overtemperature X short circuit to GND X short to Vbb -17) open load X undervoltage - overvoltage - Status output type CMOS Open drain X Output negative voltage transient limit (fast inductive load switch off) to Vbb . 16) With latch function.3 V typ. Input protection. b) Undervoltage. 200 µs) Open load detection in OFF-state with sensing current 30 µA typ.15) X (when first turned on after approx. with auto-restart on cooling X Short-circuit to GND protection switches off when VON>8.VON(CL) X Load current limit high level (can handle loads with high inrush currents) X medium level low level (better protection of application) 15) Latch except when Vbb -VOUT < VON(SC) after shutdown. PROFET® BTS 432 E2 Options Overview all versions: High-side switch. c) Overvoltage 17) Low resistance short V to output may be detected by no-load-detection bb Data Sheet 9 2010-Jan-26 .

150 µs occur Figure 2a: Switching a lamp.VOUT > 8.3 V typ. 200µs if Vbb . open-load-status may td(bb IN) approx. PROFET® BTS 432 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN t d(bb IN) V td(ST) bb ST *) V V OUT OUT A ST open drain I L IL(OL) t t A in case of too early VIN=high the device may not turn on (curve A) *) if the time constant of load is too large. Data Sheet 10 2010-Jan-26 . IN IN ST ST V V OUT OUT td(SC) I I L L t t td(SC) approx. Figure 3a: Turn on into short circuit.

VOUT < 8. 20 µs Data Sheet 11 2010-Jan-26 . Figure 4a: Overtemperature: Reset if Tj <Tjt IN IN IL ST I L(SCp) IL(SCr) V OUT T ST t J t Heating up may require several milliseconds . Figure 5a: Open load: detection in ON-state. turn Figure 3c: Short circuit while on: on/off to open load IN IN t ST ST d(ST) V OUT V OUT I IL L **) open t t **) current peak approx. Vbb .3 V typ. PROFET® BTS 432 E2 Figure 3b: Turn on into overload.

td(ST OL2) = tbd µs typ Vbb [V] charge pump starts at Vbb(ucp) =6. Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V bb V ON(CL) V bb(o rst) Vbb Vbb(over) V Vbb(u cp) bb(under) V bb(u rst) V OUT V OUT ST open drain ST t t Data Sheet 12 2010-Jan-26 . PROFET® BTS 432 E2 Figure 5b: Open load: detection in ON-state.5 V typ. open Figure 6b: Undervoltage restart of charge pump load occurs in on-state VON [V] V on VON(CL) IN off td(ST OL1) t d(OL ST2) ST V V OUT bb(over) off V V bb(u rst) bb(o rst) I normal open normal L V bb(u cp) V bb(under) t on V bb td(ST OL1) = tbd µs typ..

except area of cut.7 ±0.0 2009-11-12 RoHS-compliant version of BTS432E2 Removal of straight lead package variant E3043 Page 1.3 12.3 0.15 0.3 4.25 ±0..05 0.1 2010-01-26 Page 13: Package drawing for PG-TO220-5-11 corrected.2 1. Page 6.8 ±0.65 ±0. Y = 6.7 -0.1 8. PG-TO263-5-2 for E3062A variant.7 ±0.1 B 1) Typical All metal surfaces tin plated.4 4 x 1. page 13: RoHS compliance statement and Green product feature added Page 1.3 (15) 2.7 ±0.25 M A B 0..0.9 ±0..7 8.3 3. 1.6 ±0. Legal disclaimer updated Data Sheet 13 2010-Jan-26 .. Page 2: Thermal resistance junction to ambient for SMD version set to typically 33K/W. 1.4 9.9 ±0.2 ±0.4 ±0.1 3.1 5 x 0.1 9.3 2.4 2.4 0.3 0.27 ±0.27 ±0.15 C 0.1 5 x 0.8 ±0.0.5 1) 4. except area of cut. GPT09062 Green Product To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i. 1) Typical Metal surface min.2 1. Revision History Version Date Changes Rev.15 A B 1.5 ±0.3 ±0.9 All metal surfaces tin plated. X = 7.6 ±0.2 9.3 2.55 1) 1) 15.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).5 1) 1 ±0.0.25.. Rev. PG-TO220-5-11 for standard (staggered) variant... PROFET® BTS 432 E2 Package and Ordering Code All dimensions in mm PG-TO220-5-11 SMD PG-TO263-5-2 BTS 432 E2 BTS432E2 E3062A 10 ±0.2 1.5 ±0.3 0. page 13: Change to RoHS compliant packages.0.7 4 x 1.5 8.25 ±0.2 A 4. 0..3 10.4 7.8 ±0.4 8˚ MAX.95 17 ±0.1 0.3 3. 9: Discontinued variants removed from truth table & options overview. Page 2: Pin marking removed.2 10 ±0.25 M A C 0.05 0.1 8.

For information on the types in question. Data Sheet 14 2010-Jan-26 . warranties of non-infringement of intellectual property rights of any third party.infineon. please contact the nearest Infineon Technologies Office (www. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies. delivery terms and conditions and prices. please contact the nearest Infineon Technologies Office. including without limitation. Warnings Due to technical requirements. if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Information For further information on technology. With respect to any examples or hints given herein. any typical values stated herein and/or any information regarding the application of the device. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. PROFET® BTS 432 E2 Published by Infineon Technologies AG 81726 Munich. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind. Germany © 2010 Infineon Technologies AG All Rights If they fail. it is reasonable to assume that the health of the user or other persons may be endangered. components may contain dangerous substances.