Professional Documents
Culture Documents
Transistor Amplifiers
Shilpi Gupta
Dept. of Electrical Engineering
IIT Kanpur
Feb 22, 2017
1
Forward Active Mode
Base Emitter (BE) junction is forward biased and Base
Collector (BC) junction is reverse biased
Current Gain
IC
F VBE 0.7V
IB
Cut off Mode
Both the junctions are reverse biased
Saturation Mode
Both the junctions are forward biased
IB=0; IC=0 IC RC
V0=VCC RB V0
47 k +
VCE
Vi +
-
IB VBE
-
Vo vs Vi
6
5
4
Vo (V)
3
2
1
0
0 0.2 0.4 0.6 0.8
Vi (V)
Vo as Vi increases
RC = 1 k
Vi > Vg VCC
KVL in the BE loop: 5V
IC RC
Vi I B RB VBE
RB V0
47 k +
Vi VBE VCE
IB Vi +
-
RB IB VBE
-
Load line?
Vi > V g
Vi VBE
IB 100
RB
I C I B VCC
5V
IC RC
KVL in the CE loop:
VCC I C RC VCE RB V0
47 k +
V0 VCE VCC I C RC +
VCE
Vi -
IB VBE
-
As Vi increases
Vo as Vi increases
How low can it go?
V0 VCE VBC VBE
VBC VBE VCE VCC
When VCE 0.2V 5V
IC RC
VBC 0.5V
Both CB and BE junctions are forward RB V0
47 k +
biased and the transistor enters into
VCE
saturation +
Vi -
IB VBE
-
Display this on the DSO
Please
Verify
forced < F
Vi > V g
Vi VBE
IB 100
RB
I C I B VCC
5V
IC RC
KVL in the CE loop:
VCC I C RC VCE RB V0
47 k +
V0 VCE VCC I C RC +
VCE
Vi -
IB VBE
-
As Vi increases
What happens if RC increases?
Slope represents
gain in active
region VCC
5V
IC RC
RB V0
47 k +
VCE
Vi +
-
IB VBE
-
RC
VOut
RB
Vout vs. VB
5V VB
vs
How do we amplify the weak signal?
5V
10K
VOut
200K
1.1V
vs
Vout vs. VB
Active Saturation
Cutoff
Transistor as a Switch
RB
Circuit VO+vo
VIN(dc)
vin
VIN(dc)
vin
= =
Equivalent small signal model
= ( - 1)
=
1
= +
=
~ ~ 26 mV at 300K
DC current at Q-point
Small Signal Model or ac Model for a Transistor
b c IB4
IB3
IB2
+ IB1
r vv gmv r0
- not completely flat
e I CQ
VT VT gm
r VT The small signal model
I BQ I CQ
is valid only when
kT
v VT 26mV at 300 K
q
This model is valid for both npn and pnp transistors
Complete Analysis: dc +ac
Example 1
v0
vin
V0
1. Dc analysis
VCC 0.7
I BQ
RB
V0
ICQ I BQ
=100
VO (dc) VCC ICQ RC
I BQ 0.0215mA
I CQ 2.15mA
DC voltage sources
are shorted and dc
v0
current sources are
open circuited
vin
v0 v0
vin
v0
vin
b
c
Next, the transistor is
+
replaced by its small
r v gmv
signal model -
e
Small signal Analysis
v0
vin
RB 200K RC 1K
c vvout
b + 0
vvinin r v gmv
-
e
RB 200K RC 1K
c vout
b +
vin r v gmv
-
e
Simplify vo g mv RC
c vvout
b + 0
vvinin RB r v gmv RC
-
e
vo v vin
g m RC
vin
c vvout
0
b +
v gmv
vvinin RB r
-
RC
vo
g m RC gm
I CQ
2.15mA
0.086 S
vin VT 25mV
v0
g m RC 0.086 1000 86
vin
Example 2
Analysis:
1. DC
2. AC (small signal) VCC
R1 RC
v0
CB
CC
RL
VvSin R2 CE
RE
Analysis:
1. DC
2. AC (small signal)
VCC
R1 RC
CB
v0 CC
RL
VvSin R2 CE
RE
DC Analysis 1. Draw the dc equivalent circuit
VCC
VCC
R1 RC
R1 RC
CB
vin
VS R2 CE
RE
R2
RE
dc Analysis
2. Apply Thevenins theorem
R2 R2
RE
RE
dc Analysis
2. Apply Thevenins theorem
VCC
VCC VCC
RC
R1 RC
RB
R2 RE
VB
RE
R2
RB R1 R2 VB VCC
R1 R2
VCC
Assume transistor is in forward Active
Mode
RC IC F 1
VBE 0.7; I B ; IE IC
F F
1
I EQ I CQ I BQ (1 ) I CQ
F
RB APPLY KVL
RE
VB VB I BQ RB VBE I EQ RE
I CQ 1 F
RB ( ) I CQ RE VB 0.7
F F
VB 0.7
I CQ
RB 1 F
( ) RE
F F
Small Signal (or ac) Analysis
VS VS R2 R2 CE CE
vin RE RE
VvSin R2 CE
RE
Small Signal Analysis
RC
R1 RC RC
CB
CB CB
VS R2 R1 CE
RE
R2 vSin RB
VvSin CE V
RE
CE
RE
3. For analysis at sufficiently high frequencies, the capacitors
can be considered as short.
RC
CB RC
RB
VvS
RB in
vin
VS
RE
CE
4. The transistor is replaced by its hybrid-pi small signal model
RC
RB
v
VSin
v vin vo
RC
+ gmv
RB r v
VvS
in
vo g mv RC
v0
Av g m RC
vin
Common Emitter (CE) Amplifier
VCC
vo
R1 RC b c
RC
CB +
RB r v gmv
VS
vin
e
vin
VS R2 CE
RE
Example 3 22 V
VCC
56 k R1 RC 6.8 k
CB
F=90
vinS
V R2 CE
RE
8.2 k 1.5 k
dc Analysis
2. Apply Thevenins theorem
VCC
VCC VCC
RC
R1 RC 6.8 k
7.15 k RB
R2 RE
RE 2.81 V VB 1.5 k
56k 8.2k
RB R1 R2 7.15k
56k 8.2k R2 8.2
VB VCC 22 2.81V
R1 R2 64.2
VCC
2.81 I BQ 7.15k 0.7 I EQ1.5k
RC
6.8 k I CQ 1
I BQ ; I EQ I CQ (1 )
F F
7.15k 1
RB 7.15 k 2.11 I CQ I CQ 1 1.5k
RE 90 90
VB
2.81 V
1.5 k I CQ 1.32mA
I CQ1.32mA
gm 0.0528 S
VT 25mV
RC RC
CB
RB
VS
vin
RB
VvSin CE
RE
vo
6.8 k RC
+ gmv
RB r v
VvSin
v0
Av g m RC 0.0528 6800 359
vin
22 V
6.8 k
56 k
F=90
8.2 k
1.5 k
I CQ1.32mA
gm 0.0528 S
VT 25mV
VT 25mV
r 90 1.705k
I CQ 1.32mA