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1. A thyristor is a ___________ layer device.

a) Two
b) three
c) four
d) five

2. The number of pn junction in a thyristor is
a) 4
b) 3
c) 2
d) 1

3. A thyristor is a __________ layer device.
a) pnpn
b) p+ n+ n- n+
c) n- n+ p- p+
d) n- p- p+ n-

4. if anode terminal of thyristor is positive with respect to cathode, the number
of forward biased junctions are
a) 1
b) 2
c) 3
d) 4

5. If thyristor is forward biased, the number of reverse biased junctions are
a) 1
b) 2
c) 3
d) 4

6. The width of p region near anode is about
a) 50 to 200 cm-3
b) 30 to 50 µm
c) 10 to 100 µm
d) 100 to 250 µm

7. If anode terminal of thyristor in negative with respect to cathode, the number
of blocked p-n junctions are
a) 1
b) 2
c) 3
d) 4

8. The droping density of n-region near cathode is
a) 1014 cm-3
b) 1015 cm-3
c) 1016 cm-3
d) 1019 cm-3

2 V. The anode current in a thyristor is made up of a) Only holes b) Only electrons c) Electrons or holes d) Electrons and holes 10. turn –on time is a) equal to turn – OFF time b) greater than turn-off time c) less than turn – OFF time d) equal to 0 sec 16.In a thyristor. a thyristor.4 time of latching current 13. thyristor operating state can be changed from forward blocking state to forward conducting state when a) The applied voltage is greater than forward break over voltage b) The applied voltage is greater than reverse break down voltage c) 1. d) The applied voltage is greater than peak repetitive reverse voltage 11. In a thyristor.When the gate circuit is open. rise time and spread time 15. a)the gate pulse should not be removed b) the gate pulse should be removed to reduce losses and junction temperature c) the gate pulse may or may not be removed d) the gate pulses has no relation with thyristor turn on 14.In a thyristor the. the holding current is a) Equal to latching current b) Greater than latching current c) Less than latching current d) 0. The turn –on time of thyristor is equal to a) delay time b) rise time c) spread time d) sum of delay time. the latching current is a) Equal to holding current b) Greater than holding current c) Less than holding current d) 2.After turn-on.5 time of holding current 12.9. In a forward blocking state of thyristor a) large current flows through the thyristor .

low current 23. large current b) large voltage.7 V b) 1 V to 1. large current b) large voltage.5 18. a thyristor is associated with a) large voltage. a thyristor is associated with a) large voltage. Which of the following is the normal trigger of thyristor? a) thermal trigger b) high forward voltage trigger c) dv/dt trigger d) gate trigger 21. In the forward conduction state. Thyristor can be used as a) AC switch b) DC switch c) either ac or dc switch d) square wave switch 22. low current c) low voltage.5 c) 2 d) 2. Thyristor is equivalent to a) two transistors b) two didoes c) two DIAC . the ON – state voltage drop across thyristor is a) 0. large current d) low voltage. The ratio of latching current to holding current is a) 1 b) 1. b) voltage across thyristor is 1. large current d) low voltage. 17.2 V c) voltage across thyristor is high and very small current flows through thyristor d) voltage across thyristor is low and high current flows through the thyristor.5 V c) 50 V d) 100 V 19. The forward voltage drop across thyristor a) remain constant with load current change b) increases slightly with load current c) decreases with load current d) increases twice that of load current 20. In the forward blocking state. low current 24. low current c) low voltage.

directional device b) uni.directional device c) bipolar device d) unipolar device 28. Applying a reverse voltage between anode and cathode of the device iii. Reduce the gate current a) i only b) i and ii only c) iii only d) i. ii and iii 31. d) two MOSFET 25. The commutation of thyristor means a) turn ON b) turn OFF c) both turn ON and turn OFF d) breakdown 29. Thyristor is a a) bi. The minimum value of current required to maintain conduction of thyristor is known as a) latching current b) holding current c) gate current d) surge current 26. Which of the following statements are correct in a two – transistor model of the p-n-p-n four layer device? a) It is used to explain the turn – on process of the p-n-p-n device b) It is used to explain the turn – off process of the p-n-p-n device c) It is used to explain the device characteristics in reverse biased region d) It explains all the regions of the device characteristics 30. Thyristor can be turn OFF by i. In a normal SCR. Reducting the anode current below the holding current ii. turn-ON time is a) equal to turn off time b) less than turn off time c) more than turn off time d) about half of turn off time 32. The turn off time of a thyristor is measured from the instant . Thyristor is a a) voltage controlled device b) current controlled device c) both voltage and current controlled device d) none of the above 27.

5µs respectively. List the three modes of operation of an SCR. . List the different types of protection schemes for SCR. 11. Differentiate latching current and holding current. Draw the V-I characteristics of an SCR. 4. Define string efficiency. Define sub cycle surge current? Write the expression for finding the ISUB. Plot the interdigited gate geometry for power thyristor? 2. Define turn-on and turn –off time of an SCR. 9. 23. 7. Draw the dynamic models of an SCR. 20. Define finger voltage and static equalizing resistor. Compare BJT and SCR 21. 16. 22. 12. Determine the maximum switching frequency of SCR in a converter circuit. 24. The turn – on and turn off time of SCR is 3. a) gate current becomes zero b) anode current becomes zero c) anode voltage becomes zero d) both anode voltage and anode current becomes zero Two marks: 1. 3. Define a) reverse recovery time b) gate recovery time 14. 18. 17. 6. 19. List the problems of series operation of an SCR. Draw the resistance firing circuit of an SCR. Define a) delay time b) rise time c) spread time 13. 5. Why pulse from the timing circuit is unsuitable for directly applying to the control terminals of the switching devices. Define derating factor. List the two mounting types of and SCR. List the three characteristics of an SCR 25. Differentiate converter grade SCR from inverter grade SCR. 15. 10.5 µs and 6. List the different conditions to turn on a thyristor. Distinguish between natural and forced commutation. Draw the steady state model of and SCR. 8. Give any two significance of shorted emitter construction.

Explain the various operating states of the thyristor with relevant diagrams. . 9. Write a short note on various current. 5. 11. 2. Analyze the turn-on switching characteristics of a thyristor. 8. Compare power transistor and power thyristor.12 Marks: 1. Explain the two major problems that occur during series connection of an SCR. and also draw the steady –state characteristics of an SCR. voltage and power rating of an SCR at normal operating condition. Describe the two –transistor analogy for turn-on switching. Briefly explain the methods of protection of an SCR. Analyze the turn-off switching characteristics of a thyristor 4. 10. Explain the parallel operation of an SCR. 6. 3. 7. Describe the different modes of operation of thyristor with the help of its static characteristics. Discuss the three primary methods used for triggering the series connected SCRs.