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KSP2222A NPN General Purpose Amplifier

July 2006

KSP2222A tm

NPN General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Available as PN2222A

1 2 3
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * T a = 25°C unless otherwise noted

Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector current 600 mA
TJ Junction Temperature +150 °C
Tstg Storage Temperature -55 ~ +150 °C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T =25°C unless otherwise noted a

Symbol Parameter Max Units
PC Collector Power Dissipation, by RθJA 625 mW
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W

Electrical Characteristics * T a = 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 60V, IE = 0 0.01 µA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
hFE DC Current Gain VCE = 10V, IC = 0.1mA, 35
VCE = 10V, IC = 1mA, 50
VCE = 10V, IC = 10mA, 75
VCE = 10V, IC = 150mA, 100 300
VCE = 10V, IC = 500mA, 40
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.3 V
IC = 500mA, IB = 50mA 1 V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.6 1.2 V
IC = 500mA, IB = 50mA 2.0 V
fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 8 pF
tON Turn On Time VCC= 30V, IC = 150mA, 35 ns
IB1= 15mA, VBE(off)= 0.5V
tOFF Turn Off Time VCC= 30V, IC = 150mA, 285 ns
IB1= IB1 = 15mA
NF Noise Figure IC = 100µA, VCE= 10V, 4 dB
RS= 1KΩ , f = 1.0KHz
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KSP2222A Rev. B

58 –0.com KSP2222A Rev.27 ±0.27 ±0.46 ±0.20 0.29) Dimensions in Millimeters 2 www.fairchildsemi. B .02 ±0.25) +0.86MAX (0.38 –0.10 (R2.15 4.47 ±0.20 3.38 –0.10 1.25 4.40 +0.60 ±0. KSP2222A NPN General Purpose Amplifier Package Dimensions TO-92 +0.10 0.20] [1.27TYP 1.05 [1.05 1.20] 3.58 ±0.27TYP 0.10 14.

SPECIFICALLY THE WARRANTY THEREIN. and supplementary data will be published at a later date. The datasheet is printed for reference information only.TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. As used herein: 1. or to affect its accordance with instructions for use provided in the labeling. ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™ ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ UltraFET® Bottomless™ GTO™ OPTOLOGIC® SPM™ VCX™ Build it Now™ HiSeC™ OPTOPLANAR™ Stealth™ Wire™ CoolFET™ I2C™ PACMAN™ SuperFET™ CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3 DOME™ ImpliedDisconnect™ Power247™ SuperSOT™-6 EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8 E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™ EnSigna™ LittleFET™ PowerTrench® TCM™ FACT™ MICROCOUPLER™ QFET® TinyBoost™ FAST® MicroFET™ QS™ TinyBuck™ FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™ FPS™ MICROWIRE™ Quiet Series™ TinyPower™ FRFET™ MSX™ RapidConfigure™ TinyLogic® MSXPro™ RapidConnect™ TINYOPTO™ Across the board. can be safety or effectiveness. reasonably expected to result in significant injury to the user. OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS. Around the world. No Identification Needed Full Production This datasheet contains final specifications. 2. WHICH COVERS THESE PRODUCTS. Specifications may change in any manner without notice. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. A critical component is any component of a life support device or (a) are intended for surgical implant into the body. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Rev. I20 . THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS.™ μSerDes™ TruTranslation™ The Power Franchise® ScalarPump™ UHC™ Programmable Active Droop™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. FUNCTION. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Preliminary First Production This datasheet contains preliminary data. Life support devices or systems are devices or systems which. NOR THE RIGHTS OF OTHERS. or (c) whose failure to perform when properly used in cause the failure of the life support device or system. or (b) support or system whose failure to perform can be reasonably expected to sustain life.