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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.fairchildsemi.com

AN-6076
IC

1.
MOSFET IGBT
VB

compensated gate driver


Shoot-through current
UVLO

IN
PULSE GENERATOR
R
HO

NOISE
CANCELLER
R
S Q

VS
(IC)

1.

2.2


VS IC VDD
VDD
2. RBOOT DBOOT
CBOOT 2 VS
2.1
VBS
VBS
MOSFET IGBT IC VDD
N MOSFET IGBT
RBOOT DBOOT
DC SUPPLY

Bootstrap charge current path

Bootstrap discharge current path

VB

VDD HO
RG1
Q1
CBOOT
ILOAD

VDD
VS
LOAD
RG2 Q2
IC COM LO

1 2.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14
AN-6076

2.3 2.4 VS
5 VS
COM( )
CBOOT

LS1 LS2 VS COM
3


di/dt RGATE
PWM VS Ciss

4 Cgs Cgd

VCC
CBOOT DBOOT VDD
DBOOT

VDC
VDD
INPUT IN VB
VDD
CBOOT Q1

HVIC
VDD HO A B
RGATE
DC SUPPLY CDRV
RBOOT DBOOT LS1 iLOAD

GND VS C C

LS2 iFree
VB GND COUT VOUT
- VS
RG1 D1
VDD HO Q1 High Side OFF

HIN HIN CBOOT iLoad


Ls1

LIN LIN VS 5.
ifree
CIN Ls2
RG2
COM LO Q2Freewheeling Path
6 N MOSFET

3.
A-Point VBS

HIN
t B-Point VDC+VGS,Miller

VS -COM C-Point
VDC

t
Recovery Time

-VS Freewheeling
VGS=B-C Point

4. VS
6.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 2
AN-6076

2.5 VS 2.6

IC SCR
7 8

7


/

VS

INPUT
VDD
VB 9
di/dt VS
DBS
VS VB VDD
OUTPUT 10
VDD=15 V VS 10 V
Latch-Up Problem
25 V DBS

7.

8 VDD VB

DBS

COM VS

Gate Driver

INPUT 9. 1

VB

VS

OUTPUT

Signal Missing Problem


HIGH VBS GND

8.
10. 1 VB VS

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 3
AN-6076

11 2.7
VBS

VS (datasheet) VBS VS COM = (VRBOOT + VFDBOOT ) (LS1 + LS 2 ) di dt (1)
DBCOM
COM VB 12
1
100 nH 10 A25 V
50 ns VS 20 V
VCC VB

VCC DBCOM 3.
COM VS
3.1
Gate Driver (CBOOT)
(VDD)
11. 2

(VBS)
(VBOOT)
VB
( )
VS VGSMIN -

VB Below COM
V BOOT = V DD V F VGSMIN (2)


GND
VDD=
VF= [V]
12. 2 VB VS
QTOTAL
CBOOT = (3)
VBOOT
VBS VB VDD 13
QTOTAL
VB

VS 4
QTOTAL = QGATE + (ILKCAP + ILKGS + IQBS + ILK + ILKDIODE) tON + QLS (4)


VB close to COM
GND
QGATE =
Increased VBS
ILKGS = -
ILKCAP =
13. VB VS
IQBS =
ILK =

VS 10 CBOOT QLS=
3 nC
VBS tON =
(VBSMAX)
ILKDIODED =

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 4
AN-6076

3.2

RBOOT

I CHARGE R BOOT
IC=FAN7382 V RBOOT =
t CHARGE (5)
=FCP20N60

=UF4007
ICHARGE =
VDD = 15 V
RBOOT =
QGATE = 98 nC
tCHARGE = ( )
ILKGS = 100 nA
ILKCAP = 0 ( ) 5~10 VBS
(VBOOT)
IQBS = 120 A

ILK = 50 A
QLS = 3 nC
TON = 25 s fs=20 KHz =50%
ILKDIODE = 10 nA 4.

1.0 V 3 4.1
1
9 9
QTotal = (98 10 ) + {(100 10 + 120 10 + 50 10 6 6 MOSFET(Q1)
(6)
(CBOOT)
+ 10 10 9 ) (25 10 6 )} + (3 10 9 )

= 105.2 10 9 [C ] (DBOOT) MOSFET(Q1)
1

QTOTAL 105.2 109
CBOOT = = 105[nF] (7)
VBOOT 1 (CBOOT)

0.7 V (VDD) (VOUT)
50% VDC (VOUT)
(RSTART) (DSTART)
Q TOTAL (DSTART) 14
V BOOT = ---------------- (8) DSTART
C BOOT
(CBOOT)
(CBOOT) DZ
100nF V BOOT = 1.05 V (VDD)

150nF V BOOT = 0.7 V

220nF V BOOT = 0.48 V

570nF V BOOT = 0.18 V VDD VDC


RBOOT DBOOT DSTART RSTART

100 nF ~ 570 nF
VDD VB
CBOOT DZ

INPUT HIN HO Q1
RGATE
COM VS
L

D COUT VOUT

14.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 5
AN-6076

4.2 4.3 VS VOUT


RBOOT VS VOUT
15RBOOT RVS 16 RVS
VS
VDD VS VCC VDC
VCC RBOOT DBOOT

RBOOT DBOOT CBOOT


(BV) VDC IN IN VB

VCC CBOOT Q1

HVIC
VCC HO
RGATE
CDRV VOUT
VCC VDC L1
RVS
GND VS
RBOOT DBOOT

D1 COUT

VCC VB
Q1
R1
HIN HIN HO
CBOOT R2
LIN LIN VS 16. RVS
C1 Q2
R3
COM LO
Load
R4
RVS
17

15. DBOOT

R BOOT = R BOOT + R VS (11)


CBOOT

R ON = R GATE + R VS (12)
5~10 VBS

R OFF = R GATE + R VS (13)

R BOOT C BOOT
= ------------------------------- [ s ] (9) VCC
D
RBOOT DBOOT

RBOOT CBOOT D IBCHG


VB
IN IN ITURN-ON

CBOOT Q1
HO
RBOOT=10 CBOOT=1 F D=10 % VCC
RGATE
VOUT
CDRV
GND VS
L1

R BOOT C BOOT 6 RVS


10 1
= ------------------------------- = ------------------ = 100 [ s ] (10)
ITURN-OFF
D1 COUT
D 0.1

17.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 6
AN-6076

4.4 VS 5. HVIC
VS
VOUT VS QG 1
18 VB VS 1. HVIC

tSW_ON/OFF

100 ns 50 ns
V B V S < V BS _ abs max (14)
QG MAX
VCC VDC 2A 133 nC 67 nC
DBOOT
4A 267 nC 133 nC

IN IN VB
9A 600 nC 300 nC
CBOOT Q1
HVIC

VCC HO
VOUT
CDRV
RGATE L1 1. 4 A 2 A
GND VS

DSCHT D1 COUT 100 ns


100 KHz 1 %
300 KHz 3 %
18.
1. tSW-ON/
OFF QG
4.5 IG :
MOSFET QG
IG.AV.SW = (16)
tsw _ on / off
CBOOT
2. QG MOSFET
CBOOT RGATE VGS
PWM VGS QG
MOSFET
VS VOUT 3. tSW_ON/OFF MOSFET
VS 19 tSW 2%
600V
0.02
t SWON, OFF = 0.02 t SW = ----------- (17)
f SW
V B V S < V BS, ABSMAX (15)
(V-I)
VCC VDC

DBOOT

E SW = 0.5V DS I D t SW Joules (18)
IN IN VB

CBOOT Q1

VDS ID
HVIC

VDD HO

CDRV VOUT

GND VS
RGATE L1
4.
DZ
D1 COUT
(1)
D2 QG
I SOURCE 1.5 ------------------- (19)
t SW, ON

19.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 7
AN-6076

(2) 6.1
QG
I SINK 1.5 ---------------------- (20) tsw Rg(ON)
t SW, OFF

VDD ( VBS)

(RDRV(ON)) (Qgs, Qgd, Vgs(th))
QG = VGS = VDD MOSFET
MOSFET
tSW_ON/OFF = MOSFET /
Qgd + Qgd 21
1.5 =

Q gs + Q gd
I g ( avr ) = ---------------------- (21)
t SW

6. V DD + V gs
R TOTAL = R g ( ON ) + R DRV ( ON ) = ---------------------- (22)
I g ( avr )

Rg(ON) RDRV(ON)

20
6.2

VDC
Rg(ON) dVOUT/
HVIC dt
VB Turn-On
ON RDRV(ON) dV OUT I g ( avr )
R GATE 2 Cgd -------------- = --------------------
dt C gd ( off ) (23)
DRI VER

VBS HO
1
Cgs
OFF dVOUT
dt

VS V OUT Ig(avr)
V DD V gs ( th )
VDD
Turn-Off R TOTAL = --------------------------------------- (24)
dVOUT dV OUT
dt
C gd ( off ) --------------
OFF 1
Cgd
dt
RG(ON)
DRI VER

VDD LO Cds

Cgs
Cgd(off) Crss
ON
RDRV(OFF 2

) RG( OFF)
GND

6.3

20. MOSFET

21 - dV/dt

Cgd RG(OFF) RDRV(OFF) 22


dv/dt MSOFET
22

MOSFET dv/dt

21.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 8
AN-6076


VDC
VDD VGS (th ) 15 5
HVIC RTotal = = = 105[]
dVOUT 95 10 12 109 (30)
VB Turn-On C gd ( off )
dt
ON RDRV(ON)
2 Cgd
R GATE
VDD 15V
DRI VER

(31)
RDRV ( ON ) = = 43[]
VBS HO
1

OFF
Cgs

dVOUT
I SOURCE 350mA
dt

VS Load
iLOAD
62 W
VDD
Turn-Off
OFF
7.4.2
dVout/dt=1 V/ns
Cgd
RG(ON)
DRI VER

VDD LO Cds

VDD 15V
Cgs
ON
RDRV(OFF
) RG( OFF) RDRV ( OFF ) = = 23[] (32)
GND
I SINK 650mA

Vgs ( th ) min 3
22 R g(off) R( drv ) = 23 = 8.6 (33)
dVout 95 10 12
109
C gd
dt
V gs ( th ) {( R g ( OFF ) + R DRV ( OFF ) ) ig }
dV out (25)
= {( R g ( OFF ) + R ( drv ) ) C gd
dt
8.

8.1
Vgs (th )
R g(off) R( drv )
dV (26)
C gd out
dt

VDD
6.4 VDD

MOSFET FCP20N60 FAN7382 VS
FCP20N60 MOSFET


Qgs=13.5 nC Qgd=36 nC Cgd=95 pF VGS(th) =5 V
VGS(th)MIN =3 V

6.4.1 CMOS
1) VDD=15 V 500 ns

IC
Qgs + Qgd 36nC + 13.5nC (27)
I g ( avr ) = = = 99[mA]
t SW 500ns 2
PDGATE = 2 C L f s VDD [W ] (34)
VDD Vgs (th ) 15 5
RTotal = = = 101[] (28) 23
I g ( avr ) 99mA
(VDD=15 V)
VDD 15V (29)
RDRV ( ON ) = = 43[]
I SOURCE 350mA

58
2) dVout/dt=1 V/ns VDD=15 V

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 9
AN-6076

9.
At VDD = 15V
1
9.1
CLOAD=4400PF

CLOAD=2200PF

0.1 CLOAD=1000PF
Power [W]

PCB
CLOAD=470PF


0.01


0.1 1 10 100 1000
Switching frequency [kHz]
9.2
23.

(RBOOT)
VB COM

(CBOOT) ESR
VDD COM

VDC

8.2


TJ, MAX,OPR TJ,MAX
=150 C 80 % 120 C
TL,MAX,OPR
PCB 100 C

TJ ,max TL,max
JL,max = (35)
PPKG

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 10
AN-6076

2.

P
VCC

VCC
PWM
Q1
Controller RGATE
OUT

VOUT
L1
-
GND

D1 COUT VOUT

VCC VDC

VCC
PWM RPULL


Q1
Controller RGATE
OUT

VOUT
L1
MOSFET
GND

D1 COUT VOUT

VDC

R1
VCC Q1
RGATE

PWM

VOUT
VCC R2 L1
PWM
Controller
OUT
RBASE
QINV

D1 COUT VOUT

GND

N
VCC VDC

VCC
MOSFEF PWM
PWM
Controller
OUT
RGATE
Q1
VOUT
L1
GND

V CC < V GS , MAX and V DC < V CC V GS , Miller


DSCHT
D1 COUT VOUT

VCC VDC

VCC Floating
Supply Q1
RGATE
HO

PWM Opto

Controller VOUT
L1
LO RGATE

Q2
COUT VOUT

GND

VCC VDC

PWM RGATE
Q1
Controller VCC T1

CBLOCK
VOUT
L1



OUT1
RGATE Q2

OUT2
COUT VOUT
GND

VCC VDC

VCC
PWM


Q1
Controller OUT

VOUT

GND
L1

D1 COUT VOUT

VCC VDC

DBOOT

IN IN VB

CBOOT Q1


HVIC

VCC HO


RGATE
CDRV L1
GND VS

D1 COUT VOUT

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 11
AN-6076

A-Point VBS
VCC

DBOOT

B-Point VDC+VGS,Miller
VDC

INPUT IN VB C-Point
VDC

CBOOT VBS= (VCC -VFBD ) - (-VS)


Q1
Recovery Time

VCC
HVIC HO A B VGS=B-C Point
RGATE
CDRV
LS1 iLOAD

GND VS C C

LS2 iFree
GND COUT
- VS
D1

Negative voltage transient


at high-side switch turn-off.

Latch-up,
If VS goes significantly below propagation signal
ground, the gate driver can missing and over-
have serious troubles. voltage across the
bootstrap
capactor
The amplitude of the negative voltage is proportional
parasitic inductances and the turn-off speed (di/dt) of
the switching device, Q1, which is determined by gate
resistor, RGATE, and input capacitance, Ciss.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 12
AN-6076

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN.FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used
herein:
1.Life support devices or systems are devices or systems which, 2.A critical component is any component of a life support
(a) are intended for surgical implant into the body, or device or system whose failure to perform can be
(b) support or sustain life, or reasonably expected to cause the failure of the life support
(c) whose failure to perform when properly used in accordance device or system, or to affect its safety or effectiveness.
with instructions for use provided in the labeling, can be reason
ably expected to result in significant injury to the user.

2008 www.fairchildsemi.com
Rev. 1.4 12/29/14 13
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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