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PD - 91643

IRF6215S/L
HEXFET Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF6215S) D
VDSS = -150V
l Low-profile through-hole (IRF6215L)
l 175C Operating Temperature
RDS(on) = 0.29
l Fast Switching
G
l P-Channel
l Fully Avalanche Rated
ID = -13A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D 2 P ak T O -26 2
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ -10V -13
ID @ TC = 100C Continuous Drain Current, VGS @ -10V -9.0 A
IDM Pulsed Drain Current -44
PD @TA = 25C Power Dissipation 3.8 W
PD @TC = 25C Power Dissipation 110 W
Linear Derating Factor 0.71 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 310 mJ
IAR Avalanche Current -6.6 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 1.4
C/W
RJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40

5/13/98
IRF6215S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 V VGS = 0V, ID = -250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, ID = -1mA
0.29 VGS = -10V, ID = -6.6A
RDS(on) Static Drain-to-Source On-Resistance
0.58 VGS = -10V, I D = -6.6A TJ = 150C
VGS(th) Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250A
gfs Forward Transconductance 3.6 S VDS = -25V, ID = -6.6A
-25 VDS = 150V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
-250 VDS = 120V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 V GS = -20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = 20V
Qg Total Gate Charge 66 ID = -6.6A
Qgs Gate-to-Source Charge 8.1 nC VDS = -120V
Qgd Gate-to-Drain ("Miller") Charge 35 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = -75V
tr Rise Time 36 ID = -6.6A
td(off) Turn-Off Delay Time 53 RG = 6.8
tf Fall Time 37 RD = 12, See Fig. 10
LS Internal Source Inductance 7.5 Between lead,
nH
and center of die contact
Ciss Input Capacitance 860 VGS = 0V
Coss Output Capacitance 220 pF VDS = -25V
Crss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

-11
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
-44
(Body Diode) p-n junction diode. S

V SD Diode Forward Voltage -1.6 V TJ = 25C, IS = -6.6A, VGS = 0V


t rr Reverse Recovery Time 160 240 ns TJ = 25C, IF = -6.6A
Q rr Reverse Recovery Charge 1.2 1.7 C di/dt = -100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25C, L = 14mH Uses IRF6215 data and test conditions
RG = 25, IAS = -6.6A. (See Figure 12)
ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS,
TJ 175C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF6215S/L
100 100
VGS VGS
TO P - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
-ID , D rain-to-S ou rc e C urre nt (A )

-ID , Drain-to-Source Current (A )


- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOT TOM - 4.5V BOTTOM - 4.5V

10 10

-4 .5V
-4 .5V 2 0 s P U LS E W ID TH 2 0 s P U LS E W ID TH
TTcJ = 25C
2 5C A TTCJ == 1175C
75 C
1 1 A
1 10 100 1 10 100
-VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
I D = -1 1A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
-I D , D rain-to -So urc e C urre nt (A )

2.0

TJ = 25 C
(N o rm alize d)

1.5
TJ = 1 7 5 C
10

1.0

0.5

V DS = -5 0 V
2 0 s P U L S E W ID TH VG S = -10 V
1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
4 5 6 7 8 9 10

-VG S , Ga te -to-Source Volta ge (V) T J , J unc tion T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature
IRF6215S/L

2000 20
V GS = 0V , f = 1M H z I D = -6 .6 A
C is s = C g s + C g d , Cd s S H O R T E D V D S = -12 0V
V D S = -75 V

-V G S , G ate-to-S ource V oltage (V )


C rs s = C gd
1600 C o ss = C d s + C gd 16 V D S = -30 V
C , Capacitance (pF)

C iss
1200 12

C oss
800 8

C rss

400 4

FO R TE S T CIR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 20 40 60 80
-VD S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

100 100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
-I S D , Reverse D rain Current (A )

10 s
-I D , D rain C urrent (A )

TJ = 17 5 C
10

T J = 25 C
10 100 s

1m s

TTCC = 25 C
25C
T J = 17 5C
V G S = 0V S ing le P u lse 10m s
0.1 A 1 A
0.2 0.6 1.0 1.4 1.8 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
IRF6215S/L

15 RD
VDS

VGS
12 D.U.T.
RG -
-ID , Drain Current (A)

+ VDD

9 -10V
Pulse Width 1 s
Duty Factor 0.1 %

6
Fig 10a. Switching Time Test Circuit

3
td(on) tr t d(off) tf
VGS
10%
0
25 50 75 100 125 150 175
TC , Case Temperature ( C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10
P DM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case


IRF6215S/L

L 800
VD S ID

E A S , S ingle P ulse A valanche E nergy (m J)


TO P -2 .7A
-4 .7A
RG D .U .T
VD D
B O TTO M -6.6 A
600
IA S A
-2 0 V D R IV E R
tp 0 .0 1

400

15V

200
Fig 12a. Unclamped Inductive Test Circuit

0 A
IAS 25 50 75 100 125 150 175
S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy


Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K
QG 12V .2F
.3F
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRF6215S/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T* Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-


RG dv/dt controlled by RG +
ISD controlled by Duty Factor "D" VDD
-
D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive


P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS


IRF6215S/L
D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )


1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )


1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )


4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

Part Marking Information


D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
IRF6215S/L
Package Outline
TO-262 Outline

Part Marking Information


TO-262
IRF6215S/L
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
4 .1 0 (.1 6 1 ) 1 .50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 )


1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 4 9 ) 2 4 .3 0 (.9 5 7 )
1 5 .4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5 .2 2 (.6 0 1 )
TR L
1 .75 (.06 9 )
10 .9 0 (.42 9) 1 .25 (.04 9 )
10 .7 0 (.42 1) 4 .7 2 (.1 3 6)
16 .10 (.63 4 ) 4 .5 2 (.1 7 8)
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 ) 2 7.4 0 (1.079)


12.80 (.504 ) 2 3.9 0 (.9 41)

33 0.00 60.00 (2.3 62)


(1 4.1 73) MIN .
MA X.

3 0.40 (1.1 97)


NO TES : MAX.
1. C O M F O R M S TO E IA -4 18. 26 .40 (1.03 9) 4
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 24 .40 (.961 )
3. D IM E N S IO N ME A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/