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Applications:
Automotive Control Modules, such as:
Electronic power steering (EPS)
Transmission control (TCU)
Not to scale Antilock braking (ABS)
Emissions control
A4407-DS, Rev. 3
2.2MHz Constant On-Time Buck Regulator
A4407
With Two External and Two Internal Linear Regulators
Selection Guide
Operating Ambient
Leadframe
Part Number Temperature Range Package Packing*
Plating
TA, (C)
24-pin TSSOP with 4000 pieces per
A4407KLPTR-T 40 to 135 100% matte tin
exposed thermal pad 13-in. reel
*Contact Allegro for additional packing options.
Thermal Characteristics may require derating at maximum conditions, see application information
Characteristic Symbol Test Conditions* Value Unit
Package Thermal Resistance RJA On 4-layer PCB based on JEDEC standard 28 C/W
TON
VCP
CP1
CP2
VIN
.
IC
Power
H
Soft
Start (Max)
COUT1
Control DBUCK F
V
RSENSE
Foldback
COUT2
VOUTV5
F
COUTV5
F F F
ISENSE
VIN(Pin2) External
Foldback Controller
with Q3V3 VOUT3V3
VOUTV5P D2 Foldback
5 V Protected B240A
Tracking
COUT3V3
COUTV5P F F F
D1
F F B240A
ISENSE
A
External VOUT1V2
Controller Q1V2
with
Foldback k
COUT1V2
k
F F
k
F Fault Logic
and Microcontroller
Timing Reset
Microcontroller
Enable
k k
VIGN k
k 8.5 V
A Protection diodes D1 and D2 are required when the V5P pin is driving a wiring harness (or excessively long
PCB trace) where parasitic inductance will cause the voltage at the V5P to momentarily transition above
VIN or below ground during a fault condition.
Pin-out Diagram
VCP 1 24 CP2
VIN 2 23 CP1
GND 3 22 LX
TON 4 21 ISEN+
ENBAT 5 20 ISEN
ENB 6 PAD 19 VREG
ENBATS 7 18 CL3V3
NPOR 8 17 G3V3
CPOR 9 16 3V3
TRACK 10 15 CL1V2
V5 11 14 G1V2
V5P 12 13 1V2
ELECTRICAL CHARACTERISTICS Valid at 5.5V < VIN < 36V, 40C < TJ < 150C; unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
General Specifications
Functional Input Voltage VIN(FUNC) A4407 functional, parameters not guaranteed 5.5 46 V
Operating Input Voltage VIN(OP) 5.5 13.5 36 V
VIN = 13.5V, VIGN > VIGN(H) or VENB > VENB(H),
IQ 10 mA
no load on VREG
Supply Quiescent Current1
VIN = 13.5V, VIGN < VIGN(L) and VENB < VENB(L),
IQ(SLEEP) 10 A
no load on VREG
Buck Switching Regulator (VREG)
VIN(SWNOM) < VIN < 27V, VENB = high,
Switcher Output Regulating VREG(PWM) 5.30 5.45 5.60 V
100mA < IVREG < 1100mA
VIN = 5.5V, LX at 100% duty cycle,
5.03 V
IVREG = 1100mA
Switcher Output Dropout VREG(100%)
VIN = 6.4V and LX at 100% duty cycle,
6.38 V
IVREG = 200mA
TSW(L) VIN(SWL) < VIN < VIN(SWNOM), RTON = 412k 1.6 s
Switcher Period2 TSW(NOM) VIN(SWNOM) < VIN < VIN(SWH), RTON = 412k 450 ns
TSW(H) VIN(SWH) < VIN < 36V, RTON = 412k 1.6 s
VIN = 7.5 V, RTON = 412k 1030 1290 1550 ns
VIN = 13.5 V, RTON = 412k 160 200 240 ns
Switcher On-Time tON
VIN = 27 V, RTON = 412k 80 118 135 ns
VIN = 35 V, RTON = 412k 225 280 335 ns
VIN falling, TSW changes from
VIN(SWL) 6.2 6.5 6.8 V
TSW(L) to 100% duty cycle
VIN falling, TSW changes from
Switcher Period Threshold VIN(SWNOM) 8.0 8.6 9.2 V
TSW(NOM) to TSW(L)
VIN rising, TSW changes from
VIN(SWH) 28 31 34 V
TSW(NOM) to TSW(H)
Switcher Period Hysteresis VIN(SWNOM) Relative to the VIN voltage that initially caused
250 mV
hys the switcher period to change
ELECTRICAL CHARACTERISTICS (continued) Valid at 5.5V < VIN < 36V, 40C < TJ < 150C; unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Buck Switching Regulator (VREG) (continued)
Current Feedback Gain2 GISEN 4.0 V/V
Error Amplifier Transconductance2 gm 7.5 A/V
Error Amplifier Open Loop Gain2 AVOL 57 dB
VIN = 13.5 V, RSENSE = 300m, CO = 10 F,
0dB Crossover Frequency2 fC 65 kHz
RL = 5.5
Soft Start Ramp Time tSS 10 ms
5 V and 5VP Linear Regulators
V5 Accuracy and Load Regulation errV5 10 mA < IV5 < 215 mA, VREG 5.25 V 4.9 5.0 5.1 V
V5P Accuracy and Load Regulation errV5P 10 mA < IV5P < 280 mA, VREG 5.25 V 4.9 5.0 5.1 V
V5P/3V3 Tracking Ratio VV5P / V3V3 1.507 1.515 1.523
2.69V < V3V3 < 3.37V, IV5P = 75mA,
V5P/3V3 Tracking Accuracy errTrack3V3 0.5 +0.5 %
5.5V < VIN < 27 V
IV5P = IV5 = 75 mA, 5.5 V < VIN < 27 V,
25 +25 mV
20C < TJ < 150C
V5P/V5 Tracking Accuracy3 errTrackV5
IV5P = IV5 = 75 mA, 5.5 V < VIN < 27 V,
32 +32 mV
TJ = 40C
3.3 V Linear Regulator and FET Driver
3V3 Accuracy err3V3 10 mA < I3V3 < 700 mA 3.23 3.30 3.37 V
3V3 Input Resistance RIN3V3 300 k
G3V3 Source Current1 IG3V3(SRC) V3V3 = 3.0 V, VG3V3 = VG3V3(MAX) 1 V 160 320 480 A
G3V3 Sink Current1 IG3V3(SINK) V3V3 = 3.6 V, VG3V3 = 6 V 0.5 4 mA
G3V3 Maximum Voltage VG3V3(MAX) V3V3 = 3.0 V 9 15 V
G3V3 Minimum Voltage VG3V3(MIN) V3V3 = 3.6 V 0.7 1.0 V
G3V3 Output Impedance2 ROUT(G3V3) 175
3V3 External FET Gate Capacitance2 CISS3V3 250 5200 pF
1.2 V/1.5 V/1.8 V Linear Regulator and FET Driver
1V2 Accuracy err1V2 10 mA < I1V2 < 500 mA 1.174 1.205 1.236 V
1V2 Bias Current1 I1V2 100 nA
G1V2 Source Current1 IG1V2(SRC) V1V2 = 0.9 V, VG1V2 = VG1V2(MAX) 1V 120 240 360 A
G1V2 Sink Current1 IG1V2(SINK) V1V2 = 1.5 V, VG1V2 = 6 V 0.5 3 mA
G1V2 Maximum Voltage VG1V2(MAX) V1V2 = 0.9 V 9 15 V
G1V2 Minimum Voltage VG1V2(MIN) V1V2 = 1.5 V 0.7 1.0 V
G1V2 Output Impedance2 ROUT(G1V2) 175
1V2 External FET Gate Capacitance2 CISS1V2 250 3900 pF
Charge Pump (VCP)
VCP Output Voltage VCP VCP VIN 4.1 6.6 V
VCP Switching Frequency fSW(CP) 100 kHz
ELECTRICAL CHARACTERISTICS (continued) Valid at 5.5V < VIN < 36V, 40C < TJ < 150C; unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Logic Enable Input (ENB)
VENB(H) VENB rising 2.0 V
ENB Logic Input Threshold
VENB(L) VENB falling 0.8 V
ENB Logic Input Current1 IENB(IN) VENB = 3.3 V 100 A
ENB Pulldown Resistance RENB 60 k
Ignition Enable Input (ENBAT) and Ignition Status Output (ENBATS)
VIGN rising via a 1k series resistance,
VIGN(H) 3.3 4.0 V
measure VIGN when IQ occurs
ENBAT and ENBATS Thresholds
VIGN falling via a 1 k series resistance,
VIGN(L) 2.2 2.7 V
measure VIGN when IQ(SLEEP) occurs
VIGN = 5.5 V via a 1 k series resistance 50 100 A
ENBAT Input Current1 IENBAT(IN)
VIGN = 0.8 V via a 1 k series resistance 0.5 5 A
ENBAT Input Resistance RENBAT 650 k
ENBATS Output Voltage VENBATS(L) IENBATS = 4 mA 400 mV
ENBATS Leakage Current1 IENBATS(LKG) VENBATS = 3.3 V 1 A
ENBATS Turn-On Delay tENBATS Sleep mode to VENBATS = 3.3 V 11 ms
TRACK Input
VTRACK(H) VTRACK rising 2.0 V
TRACK Voltage Threshold
VTRACK(L) VTRACK falling 0.8 V
TRACK Bias Current1 ITRACK(BIAS) 100 A
NPOR Output
NPOR Power-Up Delay tNPOR CPOR = 0.22 F 20 ms
VENB = high or VENBAT = high,
VREG < VREGUV(L) or V3V3 < V3V3UV(L), 400 mV
INPOR 4mA
VENBAT = low, VENB transitioning low,
NPOR Output Voltage VNPOR(L) VREG = 5.45 V, INPOR 0.3 mA, 350 800 mV
0.8 V < V3V3 < err3V3, 0C TJ 150C
VENBAT = low, VENB transitioning low,
VREG = 5.45 V, INPOR 0.3 mA, 800 mV
1.0 V < V3V3 < err3V3, 40C TJ150C
NPOR Leakage Current1 INPOR(LEAK) VNPOR = 3.3 V 1 A
CPOR Characteristics
CPOR Charge Current1 ICPOR(SRC) 13 A
CPOR Voltage Threshold VCPOR(H) VCPOR rising 1.0 1.2 1.4 V
ELECTRICAL CHARACTERISTICS (continued) Valid at 5.5V < VIN < 36V, 40C < TJ < 150C; unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
NPOR Thresholds
VREGUV(H) VREG rising, NPOR transitions high 4.80 5.00 5.20 V
VREG UVLO Thresholds
VREGUV(L) VREG falling, NPOR transitions low 4.75 4.94 5.14 V
VREG UVLO Hysteresis VREGUVHYS 60 mV
V3V3UV(H) V3V3 rising, NPOR transitions high 2.80 2.95 3.10 V
3V3 UVLO Thresholds
V3V3UV(L) V3V3 falling, NPOR transitions low 2.83 V
3V3 UVLO Hysteresis V3V3UVHYS 125 mV
Measured as percentage of err1V2;
V1V2UV(H) 85 89 93 %
V1V2 rising, NPOR transitions high
1V2 UVLO Thresholds
Measured as percentage of err1V2;
V1V2UV(L) 84 %
V1V2 falling, NPOR transitions low
1V2 UVLO Hysteresis V1V2UVHYS 5 %
Buck (VREG) Current Protection
VREG ISEN Voltage Threshold VISEN(th) VISEN+ VISEN 265 350 435 mV
VREG Valley Current Limit ILIM(VALLEY) RSENSE = 300 m, VIN > VINSW(L) 883 1167 1450 mA
VREG Peak Current Limit ILIM(PEAK) 3.0 5.5 A
3.3 V Overcurrent Protection
3V3 Overcurrent Threshold VCL3V3 VREG VCL3V3 210 235 280 mV
3V3 Current Limit I3V3LIM RCL3V3 = 300 m 700 783 mA
3V3 Foldback Threshold I3V3FB V3V3 = 0 V, VREG VCL3V3 48 65 90 mV
1.2 V/1.5 V/1.8 V Overcurrent Protection
1V2 Overcurrent Threshold VCL1V2 V1V2 = 1.2 V, V3V3 VCL1V2 179 218 245 mV
1V2 Current Limit I1V2LIM RCL1V2 = 390 m 459 559 mA
1V2 Foldback Threshold I1V2FB V1V2 = 0 V, V3V3 VCL1V2 45 60 84 mV
5VP Overcurrent Protection
V5P Current Limit1 IV5PLIM VV5P = 5 V 280 415 mA
V5P Foldback Current1 IV5PFB VV5P = 0 V 70 110 150 mA
5V Overcurrent Protection
V5 Current Limit1 IV5LIM VV5 = 5 V 215 310 mA
V5 Foldback Current1 IV5FB VV5 = 0 V 74 92 135 mA
Thermal Protection
Thermal Shutdown Threshold TJTSD TJ rising 155 170 C
Thermal Shutdown Hysteresis TJTSDHYS 20 C
1For input and output current specifications, negative current is defined as coming out of the node or pin (sourcing), positive current is defined as
going into the node or pin (sinking).
2Ensured by design and characterization, not production tested.
320C ensured by design and characterization, not production tested.
Characteristic Performance
VREG Output versus Temperature TON versus Temperature
5.50 1,400
1,300
5.49
1,200
5.48 1,100
VIN (V)
VREG Output Voltage (V)
5.47 1,000
7.5
5.04 5.04
5.03 5.03
5.02 5.02
V5P Output Voltage (V)
V5 Output Voltage (V)
5.01 5.01
5.00 5.00
4.99 4.99
4.98 4.98
4.97 4.97
4.96 4.96
4.95 4.95
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (C) Temperature (C)
3.32 1.215
3V3 Output Voltage (V)
3.31 1.210
3.30 1.205
3.29 1.200
3.28 1.195
3.27 1.190
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (C) Temperature (C)
ENBAT Start / Stop Thresholds versus Temperature ENABLE Start / Stop Thresholds versus Temperature
4.0 2.0
3.8 1.8
3.6 1.6
3.4 1.4
ENBAT Threshold (V)
3.0 1.0
2.8 0.8
2.6 0.6
2.4 0.4
START START
2.2 STOP 0.2 STOP
2.0 0
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (C) Temperature (C)
CPOR Charging Current versus Temperature ENBATS (Low) Voltage versus Temperature
16 400
350
15
300
NPOR Voltage at 4 mA (mV)
CPOR Charging Current (uA)
14
250
13 200
150
12
100
11
50
10 0
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (C) Temperature (C)
VREG Valley Current Limit versus Temperature 1V2 and 3V3 Overcurrent Threshold versus Temperature
450 270
425 260
250
Overcurrent Threshold (mV)
VREG Valley Current Limit (mV)
400
240
375
230
350
220
325
210
300
200
1V2
275 190 3V3
250 180
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Temperature (C) Temperature (C)
Functional Description
sense resistor, RSENSE, between the ISENx pins, can be calcu- LX Short Circuit Protection
lated from: If the LX node is shorted to ground, there would be a relatively
RSENSE = VISEN / ILIM(VALLEY) (2) high peak current in the buck MOSFET within a very short time.
The A4407 protects itself by detecting the unusually high current,
where VISEN is documented in the Electrical Characteristics table,
turning off the buck MOSFET, and latching itself off. To avoid
350mV typical, and ILIM(VALLEY) is the lowest current measured
false tripping, the current required to activate the peak current
during the off-time.
protection, ILIM(PEAK), 5.5 A typical, is set well above the normal
It is recommended that the current sense resistor be sized so that, range of currents. After peak current limiting is activated, the
at peak output current, the voltage at the ISEN pin does not A4407 will be latched off until either: VIN is cycled below its
exceed 0.75V during PWM operation (that is, a transient condi- UVLO threshold, or the A4407 is disabled (both ENBAT and
tion). Because the diode current is measured when the inductor ENB must be brought low) and re-enabled. NPOR is not directly
current is at the valley, the average output current is greater than activated (pulled low) by the peak current protection circuitry.
the ILIM(VALLEY) value. The value for ILIM(VALLEY) should be: However, NPOR will be in the correct state depending on the
VREG, 3V3, and 1V2 outputs.
ILIM(VALLEY) = IOUT(avg) 0.5IRIPPLE + K (3)
Maximum load
IPEAK = ILIM(VALLEY) + IRIPPLE (4)
Information on how to calculate the ripple current is included in
the Application Information section. Constant On-Time
Constant Period
Buck Overcurrent Protection
The converter utilizes pulse-by-pulse valley current limiting, Time
which is activated when the current through the sense resis-
tor (that is, the buck output current) is high enough to create
350mV at the ISEN pin. During an overload condition, the Overload
switch is turned on for a period determined by the constant
Inductor Current
on-time circuitry. The switch off-time is extended until the cur- Current Limit level
rent decays to the current limit value set by the selection of the Constant On-Time
sense resistor, at which point the switch is allowed to turn-on
again. Because no slope compensation is required in this control Extended Period
scheme, the current limit is maintained at a reasonably constant
level across the input voltage range. Time
Missing Asynchronous Diode Protection the upper UVLO threshold for each. The rising edge delay allows
In most high voltage asynchronous buck regulators, if the asyn- time for the regulators to be within specification when the DSP or
chronous diode is missing or damaged the LX pin will transition microcontroller begins processing. The amount of the rising edge
to a very high negative voltage when the upper MOSFET turns delay is determined by the value of the external capacitor from
off, resulting in damage to the regulator. The A4407 includes pro- the CPOR pin to ground. The rising delay can be calculated from
tection circuitry to detect when the asynchronous diode is missing the following equation:
or damaged. If the LX pin becomes more negative than 1.6V at
25C for more than 157ns, the A4407 will latch itself in the off tNPOR = 92.3 103 CPOR (seconds) (5)
state to prevent damage. After a missing diode fault occurs, the
latch must be reset by either cycling VIN or ENBAT or ENB. See Any of the following conditions forces NPOR to transition low
figure 2 for the missing diode voltage threshold and time filtering immediately (within a few microseconds):
versus temperature.
3V3 voltage falls below its UVLO threshold, or
Thermal Shutdown 1V2 voltage falls below its UVLO threshold, or
If the A4407 junction temperature becomes too high, a thermal VREG voltage falls below its UVLO threshold, or
shutdown circuit would disable the VREG output, thus protect- ENBAT and ENB are both low, or
ing the A4407 from damage. When a thermal shutdown occurs, Charge pump voltage, VCP, is too low, or
the buck regulator stops switching and the VREG voltage decays. Internal IC power rail voltage, VRAIL, is too low
When VREG crosses UVLO threshold for it, the NPOR signal is When a thermal shutdown (TSD) occurs: PWM switching termi-
pulled low. Thermal shutdown is not a latched condition, so when nates; VREG, or 3V3, or 1V2 decay below the UVLO threshold
the junction temperature cools to an acceptable level, the A4407 for it; and NPOR transitions low. Thus, a TSD event indirectly
automatically restarts. causes NPOR to transition low.
Power On Reset (NPOR) When the A4407 is disabled (ENB and ENBAT are both low or
The NPOR output is an open drain pin that can be used to signal VIN is removed) the NPOR output is held low until the voltage
a reset event to a DSP or microcontroller. The NPOR block from the 3.3V regulator (3V3) falls below 1.0V (see figure 3).
actively monitors ENBAT, ENB, 3V3, 1V2, VCP, and VREG. This assumes maximum initial current (4mA) in the NPOR open
During power-up, NPOR is held low for a programmable amount drain DMOS. The NPOR voltages would be somewhat lower for
of time (tNPOR) after VREG, 3V3, and 1V2 all transition above lower values of INPOR.
2.00 210
ENB, ENBAT
1.90 200
3 .3 V
Negative Voltage Threshold (V)
1.80 190
Time Filtering
Time Filtering (ns)
1.50 160 4 mA
1.20 130
350 mV TYP
1.10 120 VNPOR 800 mV
-50 -25 0 25 50 75 100 125 150
400 mV
5 V Regulator (V5) applied to this regulator, the output the current folds back to 0V
The 5V linear regulator is provided to supply local circuitry. This at approximately 110mA typical (figure 5).
regulator can deliver 310mA typical, 215mA minimum. When
The V5P regulator is designed to track the either the 3V3 output
a direct short is applied to this regulator, the output current folds
or the V5 output. The V5P master reference is set by the status of
back to 0V at approximately 92mA typical (figure 4).
the TRACK pin. The V5P regulator will track the 3.3V output to
5 V Protected Tracking Regulator (V5P) within 0.5% and the V5 output to within 25mV under normal
The 5VP linear tracking regulator is provided to supply remote steady state operating conditions. If the master reference (either
circuitry such as off-board sensors. The output is monitored and 3V3 or V5) is decreasing, the V5P regulator will accurately
in case of a short to battery condition the output is disabled and track the master reference down to the point at which the master
protected until the short is removed. The regulator can deliver reference crosses its undervoltage threshold (either V3V3UV(L) or
415mA typical, 280mAminimum. When a direct short is V1V2UV(L) in the Electrical Characteristic tables).
6 6
5 5
4 4
Output Voltage (V)
Output Voltage (V)
3 3
m
mu
l
mu
ica ca
l
ini
p pi
ini
Ty
M
Ty
M
2 2
1 1
0 0
50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 50 100 150 200 250 300 350 400 450 500
Output Current (mA) Output Current (mA)
Figure 4. Fold back current limiting of the 5 V regulator Figure 5. Fold back current limiting of the 5VP regulator
Figures 6 and 7 show the A4407 operation when the V5P pin is ground, the A4407 protects the external MOSFET by folding
shorted to ground and VIN (battery). In both cases, the V5P output back when the programmed current limit, I3V3LIM, is exceeded.
is disabled and/or disconnected while the other outputs (VREG, The current limit is determined by the voltage developed across
V5, V33, and 1V5) remain active. the external sense resistor, RCL1, shown in the Functional Block
diagram. The 3.3V regulator current limit can be calculated using
Tracking Control
the following formula:
The TRACK input sets the master reference for the V5P track-
ing regulator. TRACK is meant to be either connected to ground
I3V3LIM =VCL3V3 / RCL1 (6)
or left unconnected by the PCB routing. When TRACK is left
unconnected, it is pulled high by an internal current source and
V5P tracks the 3V3 regulator. When TRACK is connected to where VCL3V3 is documented in the Electrical Characteristics
ground, then V5P tracks the V5 regulator. table, 235mV typical. Usually, RCL1 has a fairly low value so it
will not dissipate significant power (1/4W should be adequate)
3V3 Linear Regulator (3V3) but the tolerance should be 1% or less. When I3V3LIM is exceeded,
A 3.3V linear regulator can be implemented using an external the maximum load current through the external MOSFET is
MOSFET. In the event the 3.3V regulator output is shorted to folded back to 27% typical of I3V3LIM as shown in figure 8.
VREG 30 V
V3V3
VIN pin
25 V
C1 VV5 Ringing due to parasitics from a long wire
V5P is clamped to a safe level above VIN
VREG by D2 (see application schematic)
C2 V1V5
V3V3
C3
5V
C4 VV5P VV5P
C5 All
t t
Figure 6. V5P shorted to ground in 5s (DV5P is populated); shows VREG Figure 7. V5P is shorted to a 25 V battery; shows VVREG (ch1, 2 V/div.),
(ch1, 2 V/div.), V3V3 (ch2, 1 V/div.), VV5 (ch3, 2V/div.), V1V5 (ch4, 1V/div.), V3V3 (ch2, 2 V/div.), VIN pin (ch3, 5V/div.), VV5P (ch4, 5V/div.),
VV5P (ch5, 2 V/div.), t = 10 s/div. t = 10 s/div.
3.5
3.0
2.5
Output Voltage (V)
um
2.0
im
l
ca
in
um
M
pi
Ty
im
1.5
ax
M
1.0
05
0
50 10 20 30 40 50 60 70 80 90 100 110 120
Percentage of Normal Current Setting (%)
Figure 8. Fold back current limiting of the 3V3 regulator
1.4
1.2
1.0
Output Voltage (V)
pi um
0.8
im
al
in
c
um
M
Ty
0.6
im
ax
M
0.4
0.2
0
50 10 20 30 40 50 60 70 80 90 100 110 120
Percentage of Normal Current Setting (%)
13.5 V
VIN
ENB VH =2 V
VL= 0.8 V
VH =2.95 V
VL= 2.83 V 1.0V
3V3
VH = 1.07 V
1V2 VL=1.01 V
1.2 V
CPOR
Figure 10. Typical power-up and power-down by ENBAT and ENB with VIN = 13.5 V; ENBATS is assumed to be connected to 3V3 via a pull up resistor
13.5 V
6.5 V
VIN 5.2 V 5.5 V 4.9 V
ENBAT VENBAT = 0V
VH=2.95 V VL=2.83 V
3V3 1.0V
VH= 1.07V
1V2 VL= 1.01 V
1.2V
CPOR
VREG > 5.00V and
3V3 > 2.95V and NPOR is open-drain, pulled up to 3V3
1V2 > 1.07V
NPOR 0.8VMAX
20 ms ENB < 0.8V or
VREG < 4.94V or
3V3 < 2.83V or
1V2 < 1.01V or
VCP low or
VRAIL low
Figure 11. Typical power up and power down via VIN with ENB always logic high; ENBAT and ENBATS are not used
Application Information
Component Selection When the resistor is selected and a suitable tON is found, tON must
be demonstrated that it does not, under worst-case conditions,
Buck On-Time and Switching Frequency exceed the minimum on-time or minimum off-time of the con-
In order for the switcher to maintain regulation, the energy that is verter. The minimum on-time occurs at maximum input voltage
transferred to the inductor during the on-time must be transferred and minimum load. The maximum off-time occurs at minimum
to the capacitor during the off-time. Because of this relationship, supply voltage and maximum load. For supply voltages above
the load current and IR drops, as well as the input and output 6.5V but below 8.6V, refer to the section entitled Low Voltage
voltages, affect the on-time of the converter. The equation that Operation.
governs switcher on-time is:
Low Voltage Operation
T [V + (RL Ipeak) +Vf + (RSENSE Ipeak)] The converter can run at very low input voltages; for example,
tON = SW REG (8) with a 5.25V output, the minimum input supply can be as low
VIN + Vf (RDS(on) Ipeak)
as 5.5V. When operating at high frequencies, the on-time of the
The effects of the voltage drop on the inductor and trace resis- converter must be very short because the available period is short.
tance affect the switching frequency. However, the frequency At high input voltages the converter should not violate the mini-
variation due to these factors is small, and is covered in the varia- mum on-time, tON(min), and at low input voltages the converter
tion of the switcher period, which is 25% of the target. Remov- should not violate the minimum off-time, tOFF(min). Rather than
ing these current dependant terms simplifies the equation: limit the supply voltage range, the converter solves this problem
by automatically increasing the period. With the period extended,
VREG + Vf + (RSENSE Ipeak) 1 the converter does not violate the minimum on-time or off-time
tON = (9) specifications. If the input voltage is between 8.6and31V, the
VIN + Vf (RDS(on) Ipeak) fSW
converter will maintain a constant period. When calculating worst
Be sure to use worst-case sense voltage and forward voltage case on- and off-times, make sure to use the highest switching
of the diode including any effects due to temperature. For the frequency if the supply voltage is in that range.
example provided, assume a 1A converter with a supply voltage
When operating at voltages below 8.6V, additional care must
of 13.5V. The output voltage is 5.45V, Vf is 0.45V, RSENSE
be taken when selecting the inductor and diode. At low voltages
Ipeak is 0.34V, RDS(on) Ipeak is 0.15V, and the target frequency
the maximum current may be limited, due to the IR drops in the
is 2.2MHz. Applying equation 9, we can solve for tON:
current path. When selecting external components for low voltage
5.45 (V) + 0.45 (V) + 0.34 (V) 1 operation, the IR drops must be considered when determining
tON = on-time, so the complete formula (equation 8) should be used to
13.5 (V) + 0.45 (V) 0.15 (V) 2.2 (MHz)
make sure the converter does not violate the timing specification.
= 205 ns
The formulas above describe how tON changes based on input and Inductor Selection
load conditions. Because load changes are minimal and the out- Choosing the proper inductor is critical to the correct operation of
put voltage is fixed, the only factor that affects the on-time is the the switcher. The converter is capable of running at frequencies
input voltage. The converter is able to maintain a constant period above 2MHz, making it possible to use small inductor values and
over a varying supply voltage because the on-time changes based reducing cost and board area.
on the input voltage. The current into the TON pin is derived
from a resistor tied to VIN, which sets the on-time proportional to The inductor value determines the ripple current. It is important
the supply voltage. Selecting the resistor value based on the tON to size the inductor so that under worst-case conditions the over-
calculated above is done using the following formula: current threshold equals the average current minus half the ripple
current plus reasonable margin. When the ripple current is too
VIN (tON 5 (ns) ) large, the converter reaches current limit. Typically, peak-to-peak
RTON = (10) ripple current should be limited to 20% to 25% of the maximum
6.36 1012
average load current.
The buck switcher pre-regulates the voltage to the external The thermal resistance of a MOSFET is a function of die size,
MOSFET, so even under worst-case conditions, it does not have package size, and cost. So choosing RDROP1 and RJC(FET)
to support more than 7V from drain to source. Also, the external together should result in optimal performance, minimal compo-
LDOs usually deliver 500mA to 1A. Numerous MOSFETs are nent sizes, and lowest system cost. Determining the value and
available, with VDS ratings of at least 20V, that can support much power dissipated by the series dropping resistor and MOSFET
more than 1A. These two goals should not be difficult to achieve. thermal resistance are addressed in detail in the next section.
The A4407 gate drive circuitry is guaranteed to pull the G3V3
and G1V2 voltage down to 1V, maximum. Therefore, Allegro 3.3V Regulator External Resistors (RCL1, RDROP1)
recommends using external MOSFETs with a VGS threshold In the Functional Block diagram, there are two resistors, RCL1
higher than 1V. Do not use a MOSFET that will conduct signifi- and RDROP1 from the output of the buck regulator to the drain
cant current when VGS is at 1V and the system is at the highest of the 3.3V external MOSFET. RCL1 must always be pres-
expected ambient temperature. ent because it sets the 3.3V regulator current limit threshold.
One of the more critical specifications is the MOSFET on- However, RDROP1, if used, prevents the external MOSFET from
resistance, RDS(on)(FET). If the on-resistance were too high, then dissipating too much power during certain conditions. In particu-
the external regulator would not be able to maintain its output at lar, when the battery voltage is extremely low (VBAT 6.5V) and
the maximum load current. Calculate the typical RDS(on)(FET) (at the buck regulator transitions to dropout mode (100% duty cycle)
25C) using the following formula: then VREG is approximately 1V higher than normal. In this situ-
ation, without RDROP1, the MOSFET could dissipate too much
1.56 (V)
RDS(on)(FET)25C < 0.6 RDROP1 (17) power.
I3V3LIM
The value of RDROP1 depends on the maximum PCB temperature,
where I3V3LIM is the maximum current from the 3.3V regula- the maximum current load on the 3.3V regulator, the maximum
tor and RDROP1 is the value of the resistor connected from the allowable junction temperature of the MOSFET, and the thermal
CL3V3 pin to the drain of the MOSFET. The multiplier of 0.6
resistance of the MOSFET. The 3.3V regulator must conduct its
in the equation allows a 66% increase in RDS(on)(FET) when the
own load current (250mA in the Functional Block diagram) plus
MOSFET is very hot.
the load planned for the 1.2V/1.5V/1.8V regulator (450mA to
The necessity and value of RDROP1 is closely related to the 525mA in the Functional Block diagram).
thermal resistance of the MOSFET, RJC(FET). For a medium size
MOSFET (like a SOT-223) including RDROP1 in the PCB layout As the thermal resistance of the MOSFET decreases, the required
is highly recommended. For a large size MOSFET with a very value of RDROP1 also decreases. If the MOSFET is relatively
low thermal resistance (like a D2PAK) RDROP1 is probably not large and has a very low thermal resistance then RDROP1 is not
necessary. required (0).
Figure 12 shows recommended values of RDROP1 versus the 1.2V/1.5V/1.8V Regulator External Resistors
MOSFET thermal resistance at various 3.3V regulator maxi- (RCL2, RDROP2)
mum current settings, I3V3LIM. This graph assumes: steady-state In the Functional Block diagram, there are two resistors, RCL2
operation (that is, for t >> 50ms), a PCB temperature of 135C, a and RDROP2 from the output of the 3.3V regulator to the drain
maximum MOSFET junction temperature of 175C, a duty cycle of the 1.2V/1.5V/1.8V external MOSFET. RCL2 must always
for tON of 100% , a VBAT of 6.69V, and an output of 3.23V from be present because it sets the 1.2V/1.5V/1.8V regulator current
the 3.3V linear regulator. This graph takes into account the volt-
limit threshold. However, RDROP2, if used, prevents the external
age drop across the 3.3V current limit resistor, RCL1.
MOSFET from dissipating too much power.
After a value for RDROP1 is determined, the designer should
The value of RDROP2 depends on the maximum PCB temperature,
calculate its maximum power dissipation (I2 R) and select
an appropriate component, allowing adequate design margin. the maximum current load on the 1.2V/1.5V/1.8V regulator
Assuming the RDROP1 value was chosen from figure12, then (I1V2LIM), the maximum allowable junction temperature of the
figure13 shows the power dissipated by RDROP1 versus the MOSFET, and the thermal resistance of the MOSFET.
MOSFET thermal resistance at various 3.3V regulator current As the thermal resistance of the MOSFET decreases, the required
settings. value of RDROP2 also decreases. If the MOSFET is relatively
The exact value of RDROP1 is not critical, so a component with large and has a very low thermal resistance, then RDROP2 is not
1% or 5% tolerance could be used. required (0).
3.0 1.8
635 mA
2.8 635 mA
1.6
2.5 710 mA 710 mA
785 mA 1.4 785 mA
2.3
850 mA 850 mA
2.0 1.2
935 mA 935 mA
P D(RDROP2) (W)
R DROP1 ()
1.8
1.0
1.5
0.8
1.3
1.0 0.6
0.8
0.4
0.5
0.2
0.3
0 0
15 20 25 30 35 40 45 50 55 60 65 70 75 80 15 20 25 30 35 40 45 50 55 60 65 70 75 80
MOSFET Thermal Resistance (C/W) MOSFET Thermal Resistance (C/W)
Figure 12. RDROP1 value versus 3.3V MOSFET thermal resistance Figure 13. RDROP1 power dissipation versus 3.3 V MOSFET thermal
at various 3.3 V regulator maximum current settings resistance at various 3.3 V regulator maximum current settings
Figure 14 shows recommended values of RDROP2 versus late its maximum power dissipation (I2 R) and select an appro-
MOSFET thermal resistance at various 1.5V regulator maximum priate component, allowing adequate design margin. Assuming
current settings, I1V2LIM. This graph assumes a PCB temperature the RDROP2 value was chosen from figure 14, then figure 15
of 135C, a maximum MOSFET junction temperature of 175C,
shows the power dissipated by RDROP2 versus the MOSFET ther-
and 3.37V from the upstream (3.3 V) linear regulator. This graph
takes into account the voltage drop across the 1.5V current limit mal resistance at various 1.5V regulator current settings.
resistor, RCL2. The exact value of RDROP2 is not critical, so a component with
After a value of RDROP2 is determined the designer should calcu- 1% or 5% tolerance could be used.
2.0 0.7
1.8 0.6
1.5
0.5
P D(RDROP2) (W)
1.3
R DROP2 ()
0.4
1.0
0.3
0.8
0.2
0.5
A
A
A
A
A
60 A
A
A
5m
A
0m
5m
0m
5m
0m
5m
m
m
0.1 0 5m
0.3 45 37
5
45
37
67
52
67
60
52
0 0
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
MOSFET Thermal Resistance (C/W) MOSFET Thermal Resistance (C/W)
Figure 14. RDROP2 value versus 1.5V MOSFET thermal resistance Figure 15. RDROP2 power dissipation versus 1.5 V MOSFET thermal
at various 1.5 V regulator maximum current settings resistance at various 1.5 V regulator maximum current settings
PCB Component Placement and Routing dissipation. If the grounds from the device are also connected
directly to the exposed pad, the ground reference from the feed-
The board layout has a large impact on the performance of the back network will be less susceptible to noise injection or ground
device. It is important to isolate high current ground returns to bounce.
minimize ground bounce that could produce reference errors in
the device. The method used to isolate power ground from noise To reduce radiated emissions from the high frequency switching
sensitive circuitry is to use a star ground. This approach makes nodes, it is important to have an internal ground plane directly
sure that the high current components such as the input capacitor, under the LX node. That ground plane should not be broken
output capacitor, and diode have very low impedance paths to directly under the node, because the lowest impedance path back
each other. Figure 16 illustrates the technique. to the star ground is directly under the signal trace. If another
trace does break the return path, the energy would have to find
The ground traces for each of the components should be very another path, which would be through radiated emissions.
close to each other and should be connected to each other on the
same surface as the components. Internal ground planes should The peak-to-peak amplitude of the buck current sense signal
not be used for the star ground connection, because vias add will typically be only tens of millivolts. The current sense pins,
impedance to the current path. ISEN+ and ISEN, and internal differential amplifier comprise a
differential signal receiver, and balanced pair of traces should be
In order to further reduce noise effects on the PCB, noise sensi- routed from the pins of the buck current sense resistor, RSENSE,
tive traces should not be connected to internal ground planes. as shown in figure 17 (upper panel). The ISEN+ pin and the sense
The feedback network from the switcher output should have an resistor ground should not be separated by simply using local via
independent ground trace that goes directly to the exposed pad connections to the ground plane (figure 17 lower panel). Incorrect
underneath the device. The exposed pad should be connected to routing of the ISEN+ pin would likely add an offset error to the
internal ground planes and to any exposed copper used for heat buck current sense signal.
LX L1
Differential DBUCK
Amplifier ISEN (Asynchronous)
RSENSE
+ ISEN+
A4407
Q1 DBUCK COUT1
CIN Current path LX L1
(off-cycle) Differential
A4407 RSENSE RLOAD DBUCK
Amplifier ISEN (Asynchronous)
+ ISEN+
RSENSE
Star Ground A4407
Ground plane
Figure 16. Illustration of star ground connection
Incorrect routing of ISEN+ and ISEN traces
(using vias to a ground plane)
Figure 17. Comparison of routing paths for the traces between the
A4407 ISEN+ and ISEN traces and the sense resistor, RSENSE
12 40
80
Gain (dB)
Phase ()
Phase Margin 1.1 A (51)
0 0
75 Phase Margin 215 mA (46)
-12 -40
Gain Margin 15 dB -80
70 -24
60 -60 -200
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 101 1 10 100 103
Output Current, I OUT (A) Frequency (kHz)
-0.10 3V3
-0.2
-0.15
VOUT Percentage Drop (%)
VOUT Percentage Drop (%)
-0.3 V5P
-0.20
-0.50 -0.8
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 0.000 0.100 0.200 0.300 0.400 0.500
Output Current, I OUT (A) Output Current, I OUT (A)
VREG VREG
VV5
V3V3 VV5P
C1 C1
C2 V1V5 C2
C3 NPOR C3
NPOR
C4 C4
t t
Startup at VBAT = 13.5 V; shows VREG (ch1, 2 V/div.), V3V3 (ch2, 2 V/div.), Startup at VBAT = 13.5 V; shows VREG (ch1, 2 V/div.), VV5 (ch2, 2 V/div.),
V1V5 (ch3, 1V/div.), NPOR (ch4, 2V/div.), t = 5 ms/div. VV5P (ch3, 2V/div.), NPOR (ch4, 2V/div.), t = 5 ms/div.
VREG VREG
VV5
V3V3 VV5P
C1 C1
C2 V1V5 C2
C3 NPOR C3 NPOR
C4 C4
t t
Startup at VBAT = 6.5 V; shows VREG (ch1, 2 V/div.), V3V3 (ch2, 2 V/div.), Startup at VBAT = 6.5 V; shows VREG (ch1, 2 V/div.), VV5 (ch2, 2 V/div.),
V1V5 (ch3, 1V/div.), NPOR (ch4, 2V/div.), t = 5 ms/div. VV5P (ch3, 2V/div.), NPOR (ch4, 2V/div.), t = 5 ms/div.
VREG VREG
C1 C1
C2 C2
VLX VLX
IL
IL
C3 C3
t t
PWM at VBAT = 12 V with a 25 mA load; shows VREG (ch1, 5 V/div.), PWM at VBAT = 12 V with a 1.0 A load; shows VREG (ch1, 5 V/div.),
VLX (ch2, 5 V/div.), IL (ch3, 100mA/div.), t = 2 s/div. VLX (ch2, 5 V/div.), IL (ch3, 100mA/div.), t = 200 ns/div.
V3.3V V1.5V
C1 C1
I3.3V I1.5V
C2 C2
t t
V3.3V transient response, 125 to 250 mA; shows V3.3V (ch1, 50 mV/div.), V1.5V transient response, 225 to 450 mA; shows V1.5V (ch1, 50 mV/div.),
I3.3V (ch2, 100mA/div.), t = 50 s/div. I1.5V (ch2, 200mA/div.), t = 50 s/div.
VV5 VV5P
C1 C1
IV5 IV5P
C2 C2
t t
VV5 transient response, 100 to 200 mA; shows VV5 (ch1, 50 mV/div.), VV5P transient response, 125 to 250 mA; shows VV5P (ch1, 50 mV/div.),
IV5 (ch2, 100mA/div.), t = 50 s/div. IV5P (ch2, 100mA/div.), t = 50 s/div.
VREG
C1
IL IL
IL
C2 C2
t t
VREG short circuit operation at VIN = 12 V; shows VREG (ch1, 2 V/div.), VREG normal (left) and overload (right) operation at VIN = 12 V; shows
IL (ch2, 500mA/div.), t = 5 s/div. VREG (ch1, 2 V/div.), IL (ch2, 250mA/div.)
0.65
7.800.10 0.45
8
0
24
0.20
0.09
B
3 NOM 4.400.10 6.400.20 3.00 6.10
0.60 0.15
A 1.00 REF
1 2
4.32 NOM
0.25 BSC
1.65
SEATING PLANE 4.32
24X C
SEATING GAUGE PLANE
0.10 C PLANE C PCB Layout Reference View
0.30
0.19 0.65 BSC 1.20 MAX For Reference Only; not for tooling use (reference MO-153 ADT)
Dimensions in millimeters
0.15 Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
0.00 Exact case and lead configuration at supplier discretion within limits shown
A Terminal #1 mark area
B Exposed thermal pad (bottom surface)
C Reference land pattern layout (reference IPC7351
TSOP65P640X120-25M); all pads a minimum of 0.20 mm from all
adjacent pads; adjust as necessary to meet application process
requirements and PCB layout tolerances; when mounting on a multilayer
PCB, thermal vias at the exposed thermal pad land can improve thermal
dissipation (reference EIA/JEDEC Standard JESD51-5)
Revision History
Revision Revision Date Description of Revision
Rev. 3 February 11, 2013 Update asynchronous diode description