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BSP742RIXUMA1 BSP742RXUMA1

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inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump. ground referenced CMOS compatible input and diagnostic feedback.. Providing embedded protective functions. BSP 742 R Smart Power High-Side-Switch Features Product Summary • Overload protection Overvoltage protection Vbb(AZ) 41 V • Current limitation Operating voltage Vbb(on) 5.Protection • Very low standby current Application • All types of resistive.34 V • Short circuit protection On-state resistance RON 350 mΩ • Thermal shutdown with restart Nominal load current IL(nom) 0..State • CMOS compatible input • Loss of GND and loss of Vbb protection • ESD . monolithically integrated in Smart SIPMOS  technology.4 A • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • Open drain diagnostic output • Open load detection in OFF . Page 1 2004-03-16 .

BSP 742 R Block Diagram + Vbb Voltage Overvoltage Current Gate source protection limit protection V Logic OUT Limit for Charge pump unclamped Level shifter ind. activates the power switch in case of logic high signal 3 OUT Output to the load 4 ST Diagnostic feedback 5 Vbb Positive power supply voltage 6 Vbb Positive power supply voltage 7 Vbb Positive power supply voltage 8 Vbb Positive power supply voltage Pin configuration Top view GND 1• 8 Vbb IN 2 7 Vbb OUT 3 6 Vbb ST 4 5 Vbb Page 2 2004-03-16 . loads Temperature sensor Rectifier IN Load ESD Logic ST  GND miniPROFET Signal GND Load GND Pin Symbol Function 1 GND Logic ground 2 IN Input.

5 V.5 W Inductive load switch-off energy dissipation 1)2) EAS 800 mJ single pulse. PCB is vertical without blown air.3 A Load dump protection 2) VLoadDump3)= VA + VS VLoaddump V RI=2Ω. Supply voltages higher than V bb(AZ) require an external current limit for the GND pin.. e. 95 . td=400ms. VA=13.5V RL = 45 Ω 60 Electrostatic discharge voltage (Human Body Model) VESD kV according to ANSI EOS/ESD . A resistor for the protection of the input is integrated. specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . (see page 17) 2not subject to production test..1993 ESD STM5..1 . IL = 0. 70µm thick) copper area for drain connection.. +150 Power dissipation 1) Ptot 1.S5. BSP 742 R Maximum Ratings at Tj = 25°C. Vbb = 13. 70 83 1Device on 50mm*50mm*1.g. footprint Rth(JA) ... VIN= low or high. (see page 9) Tj =150 °C. see page 5) IL self limited A Current through input pin (DC) I IN ±5 mA Operating temperature Tj -40 .1998 Input pin ±1 all other pins ±5 Thermal Characteristics Thermal resistance @ min.5mm epoxy PCB FR4 with 6 cm2 (one layer.circuit current.1 . +16 Load current (Short .+150 °C Storage temperature T stg -55 . with a 150Ω resistor in GND connection. unless otherwise specified Parameter Symbol Value Unit Supply voltage Vbb 40 V Supply voltage for full short circuit protection Vbb(SC) Vbb Continuous input voltage VIN -10 . Page 3 2004-03-16 . K/W Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) .

V IN = 10 to 0 V Slew rate on 10 to 30% V OUT.4 . . V IN = 0 to 10 V Turn-off time to 10% V OUT toff . . BSP 742 R Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = -40. 12 Operating current IGND . 450 700 Nominal load current IL(nom) 0. 5..5mm epoxy PCB FR4 with 6 cm2 (one layer. (see page 17) 2Nominal load current is limited by current limitation (see page 5) Page 4 2004-03-16 . 70µm thick) copper area for drain connection. 5 Undervoltage restart of charge pump Vbb(u cp) .3 mA VIN = 5 V 1Device on 50mm*50mm*1. . V bb = 9..5V.40 V . T j ≤ 150 °C Turn-on time to 90% V OUT ton . .+150°C. 1. Load Switching Capabilities and Characteristics On-state resistance RON mΩ T j = 25 °C. 34 V Undervoltage shutdown of charge pump Vbb(under) .. 2 V/µs RL = 47 Ω Slew rate off 70 to 40% V OUT. A Device on PCB 1)2) T C = 85 °C.. unless otherwise specified min.5 Standby current Ibb(off) . max. . typ. 2 RL = 47 Ω Operating Parameters Operating voltage Vbb(on) 5 . -dV/dtoff . .3 A. 26 µA VIN = 0 V Leakage output current (included in Ibb(off)) IL(off) . . I L = 0. PCB is vertical without blown air. . . 140 µs RL = 47 Ω. dV/dton . 250 350 T j = 150 °C . . 170 RL = 47 Ω. V bb = 13.

Ibb = 4 mA Overvoltage protection 2) Vbb(AZ) 41 . typ. K Reverse Battery Reverse battery 3) -Vbb . BSP 742 R Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = -40. . 10 . mV Tj = 150 °C 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) I L(SCp) A Tj = -40 °C.VON(CL). ratings page 3). unless otherwise specified min. V at VOUT = Vbb . The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. The temperature protection is not active during reverse current operation! Input current has to be limited (see max.2 - Tj = 150 °C 0. 32 V Drain-source diode voltage (VOUT > Vbb) -VON . . °C Thermal hysteresis ∆Tjt . 2 see also VON(CL) in circuit diagram on page 8 3Requires a 150 Ω resistor in GND connection. Protection functions are not designed for continuous repetitive operation .4 . Vbb = 20 V . 600 ..5V. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. max. . 1 - Output clamp (inductive load switch off) VON(CL) 41 47 . Page 5 2004-03-16 . - Ibb = 4 mA Thermal overload trip temperature T jt 150 . 1. 2 Tj = 25 °C . - Repetitive short circuit current limit I L(SCr) Tj = Tjt (see timing diagrams) . Vbb = 13. Fault conditions are considered as "outside" normal operating range..+150°C.

. - Input threshold hysteresis ∆V IN(T) .6 mA . Vbb = 13.2 V Input turn-off threshold voltage VIN(T-) 0. BSP 742 R Electrical Characteristics Parameter Symbol Values Unit at Tj = -40.4 Tj = 150 °C.6 mA Status output (open drain).5V.6 Status invalid after positive input slope 1) t d(ST) ... IST = 1.+25 °C.8 . . max. V Open load detection voltage VOUT(OL) . 30 µA VIN = 0. IST = 1. 0.5 3. 300 600 µs Input resistance (see page 8) RI 1.3 - Off state input current I IN(off) 1 .7 V On state input current I IN(on) 1 . 3 - Openload detection current IL(OL) . . .4 6. unless otherwise specified min. µA included in standby current Ibb(off) 1no delay time after overtemperature switch off and short circuit in on-state Page 6 2004-03-16 . 5 .8 . 0. V IST = 1. 2. Input and Status feedback Input turn-on threshold voltage VIN(T+) .5 5 kΩ Diagnostic Characteristics Short circuit detection voltage VOUT(SC) . 30 VIN = 5 V Status output (open drain). 0.+150°C. 2. typ.6 mA ..1 . ST low voltage VST(low) Tj = -40. Zener limit voltage VST(high) 5.

BSP 742 R Input Output Status level level Normal L L H operation H H H Short circuit L L H to GND H L* L Short circuit to L H L Vbb (in off-state) H H H Overload L L H H H ** H Overtemperature L L H H L L Open Load in L H L off-state H H H *) Out ="L": VOUT < 2V typ. Page 7 2004-03-16 . **) Out ="H": V OUT > 2V typ.

1V typ. ± 5V .. ESD- Temperature protection is not active during ZD inverse current GND Page 8 2004-03-16 . Input circuit (ESD protection) Overvoltage protection of logic part R I IN ESD. VZ2 =Vbb(AZ) =47V typ.ZD I I I GND The use of ESD zener diodes as voltage clamp at DC conditions is not recommended Reverse battery protection VZ1 =6..V bb RI=3.5kΩ typ..5 kΩ typ.. RGND=150Ω R ST Logic Status output RI IN ST OUT +5V Power Inverse Diode GND RST(ON) R GND RL ST Signal GND Power GND RGND=150Ω. BSP 742 R Terms Inductive and overvoltage output clamp Ibb + V bb V I IN Z Vbb IN V ON IL VON PROFET OUT I ST OUT ST GND V V ST GND IN V I bb GND V OUT R GND VON clamped to 47 V typ. RI=3.

GND with an approximate solution for RL > 0Ω: V V V V IN ST GND bb IL * L IL * R L E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + ) 2 * RL | V O U T ( C L )| Page 9 2004-03-16 .ER = VON(CL) * iL(t) dt.. BSP 742 R Open-load detection Vbb disconnect with charged inductive OFF-state diagnostic condition: V OUT > 3V typ. IN=low load high Vbb IN OFF PROFET OUT I L(OL) ST GND Logic Open load unit detection V OUT V Signal GND bb GND disconnect Inductive Load switch-off energy Vbb dissipation IN E bb PROFET OUT E AS ST E Load GND Vbb V V V IN bb IN ST V GND PROFET OUT = L ST { EL GND ZL GND disconnect with GND pull up ER R L Vbb IN Energy stored in load inductance: EL = ½ * L * IL2 PROFET OUT While demagnetizing load inductance. the enérgy dissipated in PROFET is ST EAS = Ebb + EL .

transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ minimal footprint Parameter: D=tp/T Parameter: D=tp/T 2 10 10 2 D=0.2 D=0. Vin = high RON = f(V bb). Vbb = 13.05 D=0. IL = 0.2 D=0.5V .02 D=0.5 K/W D=0.01 10 0 10 0 D=0 D=0 10 -1 10 -1 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4 10 10 10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10 tp tp Typ.3A .5 K/W D=0.02 D=0. BSP 742 R Typ. transient thermal impedance Typ.1 10 1 D=0. on-state resistance Typ. on-state resistance RON = f(Tj) .1 10 1 D=0.05 Z thJA ZthJA D=0. V in = high 450 600 mΩ mΩ 150°C RON RON 350 400 300 300 25°C 250 200 -40°C 200 100 150 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 5 10 15 20 25 30 V 40 Tj Vbb Page 10 2004-03-16 .01 D=0.

2 1.4 1.2 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Tj Page 11 2004-03-16 .. turn on time Typ. RL = 47 Ω dV/dtoff = f(Tj).6 13. slew rate off dV/dton = f(T j) .5V 0.6 dton dtoff -dV dV 1. BSP 742 R Typ. R L = 47 Ω 2 2 V/µs V/µs 1.4 9V 0.6 13. RL = 47Ω toff = f(Tj).2 32V 1 32V 1 0.2 0.32V 80 9V 80 toff t on 32V 60 60 13.4 9V 0.5V 0. slew rate on Typ. RL = 47Ω 120 120 µs µs 9.4 1..8 0. turn off time ton = f(Tj ).6 1.8 0.5V 40 40 20 20 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Tj Typ.

6 0.2 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Tj Page 12 2004-03-16 . VIN = low 14 6 µA µA 10 I bb(off) I L(off) 4 8 3 6 2 4 1 2 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Tj Typ.8 40 0.start) . initial short circuit shutdown time IL(SCp) = f(Tj) .4 80 1.6 toff(SC) IL(SCp) 1. initial peak short circuit current limit Typ. Vbb = 32V .2 1 60 0. leakage current Ibb(off) = f(Tj ) . Vbb = 20V 2 120 A ms 1. standby current Typ. Vbb = 20V toff(SC) = f(Tj. BSP 742 R Typ. VIN = low I L(off) = f(Tj) .4 20 0. Vbb = 32V .

BSP 742 R Typ. input current Typ.+25°C 6 100 off 80 4 60 40 2 20 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 1 2 3 4 5 6 V 8 Tj VIN Typ. Tj = 25°C 2 2 V on V on 1. Vbb = 13.5V.5V VINlow ≤ 0.2 0 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 5 10 15 20 25 V 35 Tj Vbb Page 13 2004-03-16 . VINhigh = 5V 12 200 µA µA 160 150°C 140 8 on IIN IIN 120 -40.2 off 1 1 0.6 0.6 1.4 0..4 1. input current IIN(on/off) = f(Tj).4 VIN(th) off 1. input threshold voltage VIN(th) = f(Tj ) .4 0.7V. input threshold voltage Typ.2 1.8 0. V bb = 13.5V VIN(th) = f(V bb) .. Vbb = 13. VIN = low/high I IN = f(VIN).8 0.6 0.6 V IN(th) 1.2 0.

single pulse EAS = f(IL ). RL=0Ω 4000 500 mH µs 3000 t d(ST) 2500 300 L 2000 200 1500 1000 100 500 0 0 0 100 200 300 400 mA 600 0 5 10 15 20 25 V 35 IL Vbb Maximum allowable inductive switch-off energy. Tjstart =150°C. BSP 742 R Maximum allowable load inductance Typ.5V 1000 mJ EAS 600 400 200 0 0 100 200 300 400 mA 600 IL Page 14 2004-03-16 . Tjstart = 150°C. Vbb=13. T j = 25°C L = f(IL).5V. status delay time for a single switch off td(ST) = f(V bb). Vbb = 13.

Figure 2c: Switching an inductive load turn-on/off time and slew rate definition IN IN V OUT ST 90% t on dV/ dtoff dV/ dton t off VOUT 10% IL t IL ST Page 15 2004-03-16 . BSP 742 R Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching a lamp. IN IN Vbb ST I V L OUT ST IL t t d = 20µs Invalid status during td Figure 2a: Switching a resistive load.

depending on external conditions. Figure 5: Undervoltage restart of charge pump Figure 4: Overtemperature: Vo n Reset if Tj < Tjt IN ST V b b( u c p ) Vbb( under ) IL Vbb TJ t Page 16 2004-03-16 . Figure 3b: Short circuit in on-state shut down by overtemperature. restart by cooling IN IN V OUT V OUT O u tp u t s h o rt to G N D n o rm a l O u tp u t s h o r t to G N D o p e r a t io n I I L L (S C p ) I I L (S C r) L I L (S C r) ST ST t t d (S T ) t Heating up of the chip may require several milliseconds. BSP 742 R Figure 3a: Turn on into short circuit. restart by cooling shut down by overtemperature.

if a failure of such components can reasonably be expected to cause the failure of that life-support device or system. power dissipation Ptot Published by nominal load current IL(nom) and thermal Infineon Technologies AG. Terms of delivery and rights to technical change reserved. or to affect the safety or effectiveness of that device or system. Information For further information on technology. resistance R thja St. Warnings Due to technical requirements components may contain dangerous substances. D-81669 München © Infineon Technologies AG 2001 All Rights Reserved.-Martin-Strasse 53. If they fail. Life support devices or systems are intended to be implanted in the human body. Page 17 2004-03-16 . or to support and/or maintain and sustain and/or protect human life. regarding circuits. BSP 742 R Package and ordering code all dimensions in mm Package: Ordering code: P-DSO-8-6 Q67060-S7303-A2 Printed circuit board (FR4. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies. 1. including but not limited to warranties of non-infringement. delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). it is reasonable to assume that the health of the user or other persons may be endangered.5mm thick. 6cm2 active heatsink area ) as a reference for max. one layer 70µm. descriptions and charts stated herein. We hereby disclaim any and all warranties. Infineon Technologies is an approved CECC manufacturer. For information on the types in question please contact your nearest Infineon Technologies Office. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Informationen zu Preisen und Verfügbarkeit in Ihrem Land erhalten Sie über die unten aufgeführten Links: FR .tcpdf. EN .Pour connaître les tarifs et la disponibilité dans votre pays.org) .For pricing and availability in your local country please visit one of the below links: DE . cliquez sur l'un des liens suivants: BSP742RIXUMA1 BSP742RXUMA1 EN DE FR This Datasheet is presented by Dieses Datenblatt wird vom Cette fiche technique est the manufacturer Hersteller bereitgestellt présentée par le fabricant Powered by TCPDF (www.