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UNIT - VI

Field Effect Transistor
INTRODUCTION:
 In ordinary transistors both holes and electrons take part in current through it. This is the
reason that these are sometimes called the bipolar transistors.
 Such transistors have two main drawbacks namely low input impedance because of
forward biased emitter junction and considerable noise level. Both of these drawbacks
have been overcome to a great extent in the field effect transistor (FET), which is an
electric field (or voltage) controlled device.
 A FET is a three terminal (namely drain, source and gate) semiconductor device, in
which current conduction is by only one type of majority carriers.
 It is also sometimes called the uni-polar transistor unlike a bipolar transistor a FET
requires virtually no input (bias signal) current and gives an extremely high input
resistance (most important advantage over a BJT).

CLASSIFICATION OF FET:
1. Junction Field Effect Transistors (JFET)
2. Insulated Gate Field Effect Transistors (IGFET)
(or) Metal Oxide Semiconductor Field Effect Transistors (MOSFET)

CONSTRUCTION OF JFETs:
 A JFET is a three terminal semiconductor device in which current conduction is by one
type of carrier i.e. electrons or holes.
 The current conduction is controlled by means of an electric field between the gate and
the conducting channel of the device.

Figure: 1 N-channel JFET  The bar forms the conducting channel for the charge carriers.  If the bar is of p-type. a voltage VGS is applied between the gate and source in the direction to reverse bias the pn junction. it is called p-channel JFET and if the bar is of n-type. The drain to source voltage is called VDS and is positive if D is more positive than source S. .  The JFET has high input impedance and low noise level. Standard Notations in JFET: Source: The terminal through which the majority carriers enter the channel is called the source terminal S and the conventional current entering the channel at S is designated a IG. it is called n- channel JFET.  The two pn junctions forming diodes are connected internally and a common terminal called gate is taken out. Drain: The terminal through which the majority carriers leave the channel is called the drain terminal D and the conventional current leaving the channel at D is designated as ID.  A JFET consists of a p-type or n-type silicon bar containing two pn junctions at the sides as shown in below figure. Conventional current entering the channel at G is designated as IG. These impurity regions are called the gate (G). Gate: there are two internally connected heavily doped impurity regions formed by alloying by diffusion or by any other method available to create two pn junctions.

.e. the arrow at the gate junction points into the device and is P-channel JFET it is away from the device. Polarity conventions of JFET:  In each case. the voltage between the gate and source is such that the gate is reverse biased. gate to source) of a JFET is reverse biased. The input circuit (i.  Thus for the N-channel JFET.  The following points may be noted: 1.  The source and the drain terminals are interchangeable. This means that the device has high input impedance.Schematic symbols of JFET:  The direction of the arrow at the gate indicates the direction in which the gate current flows when the gate junction is forward biased.

and the rate of increase of ID with VDS decreases. Hence for a negative value of VGS.e IS = ID. but the values of VP and VDS (max) are lower. ID suddenly increases.  In the ohmic region. The drain is so biased w. In all JFETs. c) the cross sectional area A of the channel Drain Characteristics:  As VDS is increased from zero.  When VGS is negative and VDS is increased: When the gate is maintained at a negative voltage less than the negative cut-off voltage. In this condition.  At a certain voltage. the length of the pinch-off or saturation region increases. Hence there is no further increase of ID. ID becomes maximum. 2. As VGS is decreased from zero the reverse bias voltage across the pn junction is increased and hence the thickness of the depletion region in the channel also increases until the two depletion regions make contact with each other.  When VDS=VP. the reverse voltage across the junction is further increased. This effect is due to the avalanche multiplication of electrons caused by breaking of covalent bonds of silicon atoms in te depletion region between the gate and the drain. source that drain current ID flows from the source to drain. 3. the channel is said to be cut-off. the curve ID versus VDS is similar to that for VGS=0.t. in an almost linear manner. . The region from VDS=0 to VDS=VP is called the ohmic region. When VDS is increased beyond VP. ID increases. (iii) When VGS=0 and VDS is increased from zero: Drain is positive with respect to the source with VGS=0. (ii) When VDS=0 and VGS is decreased from zero: In this case the pn junctions are reverse biased and hence the thickness of the depletion region increases. This is useful as a voltage variable resistor (VVR) or voltage dependent resistor (VDR). Therefore the conventional current ID flows from drain to source. the drain to source resistance VDS/ID is related to the gate voltage VGS.r. Now the majority carriers (electrons) flow through the Nchannel from source to drain. (Conductivity) b) The length L of the channel. source current IS is equal to the drain current i. The value of VGS which is required to cut-off the channel is called the cut-off voltage VC. The magnitude of the current will depend upon the following factors: a) The number of majority carriers available in the channel. Operation of N-channel JFET: (i) When VGS=0 & VDS=0: When no voltage is applied between drain and source & gate and source the thickness of the depletion regions around the pn junction is uniform.

ID for various values of gate- source voltage.Transfer Characteristics:  The transfer characteristic for a JFET can be determined experimentally.  It is observed that (i) Drain current decreases with the increase in negative gate-source bias (ii) Drain current. ID = IDSS when VGS = 0 (iii) Drain current. keeping drain- source voltage. 𝑉𝑃 𝐷𝑆𝑆 . VGS. VDS constant and determining drain current. ID = 0 when VGS = VD The transfer characteristic follows the equation: 𝑉𝐺𝑆 2 𝐼𝐷 𝐼𝐷 = 𝐼𝐷𝑆𝑆 [1 − ] (or) 𝑉𝐺𝑆 = 𝑉𝑃 [1 − √𝐼 ] Shockley’s equations.

corresponding with an increasing resistance level. the slope of each curve becomes more and more horizontal. In this region the JFET can actually be employedas a variable resistor whoseresistance is controlled by the applied gate-to-source voltage.6: n-Channel JFET characteristics with IDSS= 8 mA and VP = 4 V.  As VGS becomes moreand more negative. Comparison of JFET and BJT: .10 is referred to as the ohmicor voltage-controlled resistance region. The following equation will providea good first approximation to the resistance level in terms of the applied voltageVGS. wherero is the resistance with VGS = 0 V and rd the resistance at a particular level of VGS. 5.  The slope of each curve and therefore the resistance of the device between drain and source for VDS< VP is a function of the applied voltage VGS. FET as Voltage-Variable Resistor (VVR) The region to the left of the pinch-off locus of Fig. Fig. 5.

Depletion type MOSFET: Basic Construction: n-Channel depletion type MOSFET .Metal Oxide Semiconductor Field Effect Transistor (MOSFET): MOSFETs are divided into two types: (i) Depletion Type MOSFET (ii) Enhancement Type MOSFET The terms depletion and enhancement define their basic mode of operation.

 The source and drain terminals are connected through metallic contacts to n-doped regions linked by an n-channel.  If we apply negative gate voltage. the greater the depletion of n-channel electrons.  The gate is also connected to a metal contact surface but remains insulated from the n- channel by a very thin layer of dielectric material.  Thus.  For positive values of VGS the positive gate will draw additional electrons from the p- type substrate due to reverse leakage current and establish new carriers through the collisions between accelerating principles. Because of this. . Basic operation and characteristics:  On the application of drain to source voltage VDS and keeping gate to source voltage to zero. there is no direct electrical connection between the gate terminal and the channel of a MOSFET. n-channel is depleted of some of its electrons. the drain current also increases. The level of drain current will reduce with increasing negative bias for VGS.  Two highly doped n-regions are diffused into a lightly doped p-type substrate. This establishes current through the channel to be denoted as IDSS at VGS=0V. increasing the input impedance of the device. free electrons from the n-channel attract towards positive potential of drain terminal. These two highly doped n-regions represent source and drain.  Due to recombination. In some cases substrate is internally connected to the source terminal. and attract holes from the p-type substrate. the negative charges on the gate repel conduction electrons from the channel. silicon dioxide (SiO2). as gate to source voltage increases in positive direction. This initiates recombination of repelled electrons and attracted holes. thus decreasing the channel conductivity.  The greater the negative voltage applied at the gate.

It differs in construction from the depletion MOSFET in that it has no physical channel.  The application of a positive gate to source voltage has “enhanced” the level of free carriers in the channel compared to that encountered with VGS=0V. Basic Construction: .  For this reason the region of positive gate voltages on the drain or transfer characteristics is referred to as enhancement region and the region between cutoff and the saturation levels of IDSS referred to as depletion region. Symbols for n-channel and p-channel depletion type MOSFETs: Enhancement Type MOSFET: This type of MOSFET operates only in the enhancement mode and has no depletion mode.

Channels are electrically induced in these MOSFETs. more and more electrons accumulate under the gate. so they accumulate at the surface of the substrate just below the gate. reverses leakage current flows.  When drain is applied with positive voltage with respect to source and no potential is applied to the gate two N-regions and one P-substrate from two P-N junctions connected back to back with a resistance of the P-substrate. E-MOSFET substrate extends all the way to the silicon dioxide (SiO2) and no channels are doped between the source and the drain. Operation:  This MOSFET operates only in the enhancement mode and has no depletion mode.  If the P-type substrate is now connected to the source terminal.  The main difference between the construction of D-MOSFET and that of E-MOSFET is. .  When the gate is made positive with respect to the source and the substrate. It operates with large positive gate voltage only. and the drain substrate junction remains reverse biased. Since these electrons cannot flow across the insulated layer of silicon dioxide to the gate. minority) charge carriers within the substrate are attracted to the positive gate and accumulate close to the-surface of the substrate. As the gate voltage is increased. This is the reason that it is called normally-off MOSFET. It does not conduct when the gate-source voltage VGS = 0. So a very small drain current that is. there is zero voltage across the source substrate junction. negative (i.e. when a positive gate-source voltage VGS is applied to it.

When this occurs. it can be used as a variable-voltage resistor (WR) or as a constant current source.on and the drain current ID is controlled by the gate voltage. and then much more rapidly with an increase in VGS. being of the order of a few nano-amperes. ID is approximately zero. in turn. depends upon the number of charge carriers attracted to the positive gate.  These accumulated minority charge carriers N -type channel stretching from drain to source. Thus drain current is controlled by the gate potential.e. Thus E-MOSFET can be operated in either of these regions i. Characteristics of an EMOSFET:  The lowest curve is the VGST curve. When the VGS is made positive.  The minimum value of gate-to-source voltage VGS that is required to form the inversion layer (N-type) is termed the gate-to-source threshold voltage VGST.  Since the conductivity of the channel is enhanced by the positive bias on the gate so this device is also called the enhancement MOSFET or E.  The almost vertical components of the curves correspond to the ohmic region. When VGS is greater than VGST. . the drain current ID increases slowly at first. a channel is induced by forming what is termed an inversion layer (N-type). The manufacturer sometimes indicates the gate-source threshold voltage VGST at which the drain current ID attains some defined small value (say 10µA).  The current IDSS at VGS <=0 is very small. The strength of the drain current depends upon the channel resistance which. When VGS is lesser than VGST. the device turns. and the horizontal components correspond to the constant current region.  Now a drain current starts flowing.MOSFET.

𝐺𝑆 (𝑂𝑁)−𝑉𝑇 ) Symbols for Enhancement n-channel and p-channel type MOSFET: Assignment-cum-Tutorial Questions A. 𝐼𝐷 = 𝐾[(𝑉𝐺𝑆 − 𝑉𝑇 )2 ] 𝐼𝐷 (𝑂𝑁) Where K = (𝑉 2 is a constant function of the construction of the device. I) Objective Questions .  For VGS>VT the relationship between drain current and VGS is nonlinear and it is given as. Questions testing the understanding/remembering level of students.

With the E-MOSFET. with the increase in drain voltage . A JFET is a ………… driven device a) current b) voltage c) both current and voltage d) none of the above 12. when gate input voltage is zero. and the: a) source b) substrate c) channel d) cathode 7. A MOSFET has how many terminals? a) 2 b) 1 c) 3 OR 4 d) 3 5. D) As VGS decreases ID remains constant. how will the IDS change in an n-channel JFET? a) As VGS increases ID increases. the result is called: a) polarization b) saturation c) cutoff d) field effect 4. then drain current …………. The gate of a JFET is ………… biased a) reverse b) forward c) reverse as well as forward d) none of the above 13. How will electrons flow through a p-channel JFET? a) from drain to gate b) from source to gate c) from source to drain d) from drain to source 10. drain current is: a) at saturation b) zero c) IDSS d) widening the channel 6.1. In the constant-current region. JFET terminal “legs” are connections to the drain. c) As VGS increases ID remains constant. this point is called the: a) depletion region b) pinch-off region c) saturation point d) breakdown region 3. a JFET is: a) saturated b) an open switch c) cut off d) an analog device 2. When applied input voltage varies the resistance of a channel. When the JFET is no longer able to control the current. When drain voltage equals the pinch-off-voltage. the gate. When VGS = 0 V. the process is called: a)gate charge b)enhancement c)substrate connecting d)depletion 9. B) As VGS decreases ID decreases. When an input signal reduces the channel size. IDSS can be defined as: a) the maximum possible current with VGS held at 0 V b) the maximum possible current with VGS held at –4 V c) the minimum possible drain current d) the maximum drain current with the source shorted 8. 11.

a) True b) False 15. An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted.Oxide Semiconductor FET c) Both a & b 19. a) True b) False 18. The passage of majority charge carriers from source to drain terminal takes place through the channel only after an application of a) Drain to Source Voltage (VDS) b) Gate to Source Voltage (VGS) c) Gate to Gate Voltage (VGG) d) Drain to Drain Voltage (VDD) II) Descriptive Questions: 1. drain resistance rd and amplification factor (µ) of a JFET. 2. Why are N-channel MOSFETs preferred over P-channel MOSFETs? 3. Compared JFET and BJT. Why a Field Effect Transistor is called so? 7. How does the constructional feature of a MOSFET differ from that of a JFET. a) True b) False 16. Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level. a) decreases b) increases c) remains constant d) none of the above 14. . a) True b) False 17. Establish the relation between them. 6. A JFET can be either a current-controlled device or a voltage-controlled device. Which transistor is also renowned as ' Insulated Gate Field Effect Transistor' (IG-FET)? a) Junction FET b) Metal. 5. The amount of gate voltage needed to turn the JFET completely off is called VGS(OFF). Define and explain the parameters transconductance gm. Explain why BJTs are called bipolar devices while FETs are called uni-polar devices. What is MOSFET? How many types of MOSFETs are there? 4.

A JFET has the following parameters: IDSS = 32 mA . find the value of (i) VGS and (ii) VP.5 V.6mA. 9.0mA. For VDS = 3 V. 10. A FET has a driven current of 4mA.9 V. At what value of VGS in the pinch-off region will ID equal to 3.0mA? 9. The data sheet for certain type of JFET indicates that IDSS = 25mA. B) Questions testing the ability of students in applying the concepts. find the change in ID corresponding to a change in VGS from −2 to −1. 8. and gm0 = 5000µS. 3. If IDSS =8mA and VGS(off)=-6V. 1.3 to 1. 1V and 2V. determine the threshold voltage VT. and 10 mA. Find the value of drain current.4 * 103 A/𝑉 2 (of enchancement type MOSFET) and ID(ON) =3mA with VGS(ON)=4V. If IDSS = 10 mA and VGS (off) = – 6 V. If VA = 100 V. determine the drain current at VGS=-1V. An N-channel JFET has IDSS=8mA and Vp=-5V. Given the constant k=0. 0V. 10. 11. 5.6 V.4V. VGS (off) = – 8V . Compare the difference i current levels between -1 and 0V with the difference between 1 and 2V. Find the values of VGS and VP. Find the value of transconductance. does the drain current increase at a significantly higher rate than for negative values? is there a linear or nonlinear relationship between ID and VGS? Explain. Give the construction details and characteristics of enhancement type MOSFET.5 mA. VGS = – 4. Given a depletion type MOSFET with IDSS=6mA and VP=-3V. VGS(off) = -10V. 2. An n-channel JFET has a pinch-off voltage VP of – 4. 6. Determine (i) The type of JFET (ii) Drain current ID at VGS = 0 (iii) Drain current ID and transconductance gm at VGS = .5V and IDSS = 9. the drain current changes from 1.0mA and what is the value of VDS(P) when ID = 3. When the reverse gate voltage of JFET changes from 4 to 3. 7. Determine the minimum value of VDS for pinch-off region and the drain current ID for VGS=-2V in the pinch off region. Give the construction details and characteristics of JFET. A JFET has a drain current of 5 mA. 4. find the JFET output resistance ro when operating in pinch-off at a current of 1 mA. In the positive VGS region. . 2. Give the construction details and characteristics of depletion type MOSFET.8.

For a certain D-MOSFET. How will you plot the transconductance curve for the device ? 17. The data sheet of a JFET gives the following information : IDSS = 3 mA. Determine the resulting value of K for the device. How will you plot the transconductance curve for this MOSFET ? . Given that VGS (off) = – 8V 14. (i) Is this an n-channel or a p-channel ? (ii) Calculate ID at VGS = – 3V. Determine the drain current for VGS = 5V 18. (iii) Calculate ID at VGS = + 3V 16. What is ID when VGS = + 6V? 13. IDSS = 10 mA and VGS (off) = – 8V. Determine the transconductance for VGS = – 4V and find drain current ID at this point 15. The data sheet for an E-MOSFET gives ID (on) = 3 mA at VGS = 10V and VGS (th) = 3V. A D-MOSFET has parameters of VGS (off) = – 6V and IDSS = 1 mA. The data sheet for an E-MOSFET gives ID(on) = 500 mA at VGS = 10V and VGS (th) = 1V.12. A particular p-channel JFET has a VGS (off) = + 4V. Determine the value of gm at VGS = – 3V. VGS (off) = – 6V and gm (max) = 5000 μS. A JFET has a value of gmo = 4000 μS.