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Advance Technical Data

HiPerFASTTM IGBT IXGH 60N60C2 VCES = 600 V


C2-Class High Speed IGBTs IXGT 60N60C2 IC25 = 75 A
VCE(sat) = 2.5 V
tfi typ = 35 ns

Symbol Test Conditions Maximum Ratings TO-247 AD


(IXGH)
VCES TJ = 25C to 150C 600 V
VCGR TJ = 25C to 150C; RGE = 1 M 600 V
C (TAB)
VGES Continuous 20 V
G
VGEM Transient 30 V C
E
IC25 TC = 25C (limited by leads) 75 A TO-268
(IXGT)
IC110 TC = 110C 60 A
ICM TC = 25C, 1 ms 300 A G
SSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 100 A E C (TAB)

(RBSOA) Clamped inductive load @ 600V


PC TC = 25C 480 W
G = Gate, C = Collector,
TJ -55 ... +150 C E = Emitter, TAB = Collector
TJM 150 C
Tstg -55 ... +150 C
Features
Maximum lead temperature for soldering 300 C
1.6 mm (0.062 in.) from case for 10 s z
Very high frequency IGBT
z
Square RBSOA
Md Mounting torque (TO-247) 1.13/10Nm/lb.in. z
High current handling capability
Weight TO-247 AD 6 g
z
MOS Gate turn-on
TO-268 4 g - drive simplicity

Applications

z
PFC circuits
Symbol Test Conditions Characteristic Values
z
Uninterruptible power supplies (UPS)
(TJ = 25C, unless otherwise specified)
z
Switched-mode and resonant-mode
min. typ. max. power supplies
z
AC motor speed control
VGE(th) IC = 250 A, VCE = VGE 3.0 5.0 V
z
DC servo and robot drives
z
DC choppers
ICES VCE = VCES TJ = 25C 50 A
VGE = 0 V TJ = 150C 1 mA
Advantages
IGES VCE = 0 V, VGE = 20 V 100 nA
z
High power density
VCE(sat) IC = 50 A, VGE = 15 V TJ = 25C 2.1 2.5 V z
Very fast switching speeds for high
TJ = 125C 1.8 V frequency applications

2003 IXYS All rights reserved DS99043A(09/03)


IXGH 60N60C2
IXGT 60N60C2
Symbol Test Conditions Characteristic Values TO-247 AD Outline
(TJ = 25C, unless otherwise specified)
min. typ. max.

gfs IC = 50 A; VCE = 10 V, 40 58 S
Pulse test, t 300 s, duty cycle 2 %
P

Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 280 pF
Cres 97 pF

Qg 146 nC
e
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 nC
Dim. Millimeter Inches
Qgc 50 nC Min. Max. Min. Max.
A 4.7 5.3 .185 .209
td(on) 18 ns A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
tri Inductive load, TJ = 25C 25 ns b 1.0 1.4 .040 .055
td(off) IC = 50 A, VGE = 15 V 95 150 ns b1 1.65 2.13 .065 .084
VCE = 400 V, RG = Roff = 2 b2 2.87 3.12 .113 .123
tfi 35 ns C .4 .8 .016 .031
D 20.80 21.46 .819 .845
Eoff 0.48 0.8 mJ E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
td(on) 18 ns L 19.81 20.32 .780 .800
L1 4.50 .177
tri Inductive load, TJ = 125C 25 ns
P 3.55 3.65 .140 .144
Eon IC = 50 A, VGE = 15 V 0.45 mJ Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
td(off) VCE = 400 V, RG = Roff = 2 130 ns S 6.15 BSC 242 BSC
tfi 80 ns
Eoff 1.2 mJ TO-268 Outline

RthJC 0.26 K/W


RthCK (TO-247) 0.25 K/W

Min. Recommended Footprint


(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2
IXGT 60N60C2

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics


@ 25 Deg. C @ 25 deg. C
100 200
VG E = 15V 9V VG E = 15V
90 13V
13V 175
80 11V 11V 9V
150
70
7V
I C - Amperes

I C - Amperes
60 125

50 100
40 7V
75
30
50
20
5V 25
10 5V
0 0
0.5 1 1.5 2 2.5 3 3.5 1 1.5 2 2.5 3 3.5 4 4.5
V CE - Volts V CE - Volts

Fig. 3. Output Characteristics


Fig. 4. Temperature Dependence of V CE(sat)
@ 125 Deg. C
100 1.2
VG E = 15V 9V
90
13V 1.1
80 11V VG E = 15V I C = 100A
VC E (sat) - Normalized

70 7V 1
I C - Amperes

60
0.9
50
I C = 50A
0.8
40

30 5V 0.7
I C = 25A
20
0.6
10

0 0.5
0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150
V CE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage


Fig. 6. Input Admittance
vs. Gate-to-Emitter voltage
5 200
T J = 25 C
4.5 175

4 150
I C - Amperes

3.5 125
VCE - Volts

3 100

2.5 75
I C = 100A
T J = 125 C
2 50
50A 25 C
1.5 25A 25 -40 C

1 0
5 6 7 8 9 10 11 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V GE - Volts V GE - Volts

2003 IXYS All rights reserved


IXGH 60N60C2
IXGT 60N60C2

Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG

100 6
90 TJ = 125 C
T J = -40 C VGE = 15V I C = 100A
80
5
25 C
VCE = 400V
70

E off - milliJoules
125 C 4
g f s - Siemens

60
I C = 75A
50 3
40
2 I C = 50A
30

20 I C = 25A
1
10
0 0
0 25 50 75 100 125 150 175 200 2 4 6 8 10 12 14 16
I C - Amperes R G - Ohms

Fig. 9. Dependence of Eoff on IC Fig. 10. Dependence of Eoff on Temperature

5 5
R G = 2 Ohms R G = 2 Ohms
R G = 10 Ohms - - - - - I C = 100A
R G= 10 Ohms - - - - -
4 VG E = 15V 4
VG E = 15V
VC E = 400V
E off - MilliJoules

VC E = 400V
E off - milliJoules

T J = 125 C
3 3
I C = 75A

2 2
I C = 50A
T J = 25 C
1 1

I C = 25A
0 0
20 30 40 50 60 70 80 90 100 25 50 75 100 125
I C - Amperes TJ - Degrees Centigrade

Fig. 11. Gate Charge Fig. 12. Capacitance

15 10000
f = 1M Hz
VC E = 300V
I C = 50A
12 C ies
I G = 10mA
Capacitance - pF

1000
9
VG E - Volts

C oes

6
100

C res
3

0 10
0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 40
Q G - nanoCoulombs V CE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2
IXGT 60N60C2

F ig . 13. M aximu m Tran sien t Th ermal R esistan ce

0 .3

0 .25
R (th) J C - (C/W)

0 .2

0 .15

0.1

0 .05
1 10 10 0 10 0 0
Puls e W idth - millis ec onds

2003 IXYS All rights reserved