BC107/BC108 Series

Low Power Bipolar Transistors
General Purpose Amplifier/Switches Feature:
• NPN Silicon Planar Epitaxial Transistors.

TO-18 Metal Can Package

Dimensions Minimum Maximum

A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions : Millimetres

Pin Configuration:
1. Emitter
2. Base
3. Collector

Page 1 20/04/06 V1.0

IB = 0 BC107 45 Collector-Emitter Voltage VCEO - BC108 25 V IE = 10µA.28 W PD Power Dissipation at TC = 25°C 1.67 Operating and Storage Junction Temperature Range TJ.0 .05 IC = 100mA. IE = 0 BC107 µA 4.77 Page 2 20/04/06 V1.6 Derate above 25°C 2.55 0.70 Base Emitter On Voltage VBE (on) IC = 10mA.0 VCB = 45V. VCE = 5V 0. IB = 5mA 0.0 Emitter-Base Voltage VEBO - BC108 5.83 Base Emitter Saturation Voltage - IC = 10mA. IB = 0. 0.60 IC = 2mA.25 Collector Emitter Saturation Voltage VCE (Sat) .5mA 1. IE = 0 BC107 15 VCB = 25V.0 mW/°C Derate above 25°C 6.0 VCB = 25V. Tstg -65 to +200 °C Thermal Resistance Junction to Case Rth (j-c) 175 °C/W Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition Minimum Maximum Unit IC = 2mA.0 IC = 10µA.2 A Power Dissipation at Ta = 25°C 0. V 0. VCE = 5V B Group 40 - C Group 100 - IC = 2mA. VCE = 5V . IC = 0 BC107 6.0 Collector Current Continuous IC 0. VCE = 5V BC 107 110 450 DC Current hFE BC 108 110 800 - A Group 110 220 B Group 200 450 C Group 420 800 VBE (Sat) 0. IE = 0 BC108 15 nA Collector-Cut off Current ICBO Tamb = 125°C - VCB = 45V. IE = 0 BC108 4. BC107/BC108 Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Symbol BC107 BC108 Unit Collector-Emitter Voltage VCEO 45 25 Collector-Base Voltage VCBO 50 30 V Emitter-Base Voltage VEBO 6.0 5.

4.2mA Noise Figure NF Rg = 2kΩ 10 dB F = 1kHz.5 KΩ C Group 6. umhos B Group 60 C Group 110 Specifications hFE fT VCBO VCEO IC minimum Ptot maximum minimum Type Package Part Number (V) (A) at IC = 2mA (*Typical) (mW) (V) (V) BC107 110 45 50 600 BC107A 200 BC107B 0. BC107/BC108 Series Low Power Bipolar Transistors Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition Minimum Maximum Unit IC = 10mA.6 4.1 150 NPN TO-18 300 BC108 110 20 30 BC108B 600 200 BC108C Page 3 20/04/06 V1. IC = 0. VCE = 5V hoe A Group 30 Output Admittance .5 Input Impedance KΩ B Group 3. VCE = 5V BC 107 125 500 BC 108 125 900 Small Signal Current Gain hfe - A Group 125 260 B Group 240 500 C Group 450 900 IC = 2mA.5 pF ALL f = 1kHz IC = 2mA. IB = The value for Collector Knee Voltage VCE (K) V which IC = 11mA . MHz f = 100MHz VCE = 5V. Transition Frequency ft 150 .B = 200Hz Output Capacitance Cobo VCB = 10V.0 15 IC = 2mA.60 at VCE = 1V VCE = 5V. IC = 10mA. VCE = 5V hie A Group 1. 0.2 8.0 . f = 1MHz .

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