STP6NK90Z - STP6NK90ZFP

STB6NK90Z
N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw
STP6NK90Z 900 V <2Ω 5.8 A 140 W
STP6NK90ZFP 900 V <2Ω 5.8 A 30 W
STB6NK90Z 900 V <2Ω 5.8 A 140 W
■ TYPICAL RDS(on) = 1.75 Ω 3
2
■ EXTREMELY HIGH dv/dt CAPABILITY 1
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
TO-220 TO-220FP
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING 3
1
REPEATIBILITY
D2PAK

DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC
■ LIGHTING

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP6NK90Z P6NK90Z TO-220 TUBE
STP6NK90ZFP P6NK90ZFP TO-220FP TUBE

STB6NK90ZT4 B6NK90Z D2PAK TAPE & REEL

November 2002 1/12

VDD = 50 V) GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. ID = IAR.5 °C/W Tl Maximum Lead Temperature For Soldering 300 °C Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current. 2500 V Tj Operating Junction Temperature -55 to 150 °C Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤5. di/dt ≤200A/µs.5 V/ns Viso Insulation Withstand Voltage (DC) -. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. Max. 2/12 .STP6NK90Z .12 0. but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.2 (*) A PTOT Total Dissipation at TC = 25°C 140 30 W Derating Factor 1.STP6NK90ZFP .8 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 300 mJ (starting Tj = 25 °C.source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 5. Unit BVGSO Gate-Source Breakdown Igs=± 1mA (Open Drain) 30 V Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability.2 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max (When 60 °C/W mounted on minimum Footprint) Rthj-amb Thermal Resistance Junction-ambient Max 62. VDD ≤ V(BR)DSS. Tj ≤ TJMAX.5KΩ) 4000 V dv/dt (1) Peak Diode Recovery voltage slope 4.2 23. R=1. These integrated Zener diodes thus avoid the usage of external components.89 4.8 (*) A ID Drain Current (continuous) at TC = 100°C 3.65 3.65 (*) A IDM () Drain Current (pulsed) 23.8 5. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK TO-220FP Unit Rthj-case Thermal Resistance Junction-case Max 0. Repetitive or Not-Repetitive 5.24 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF.STB6NK90Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP6NK90Z / STB6NK90Z STP6NK90ZFP VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate.8A. Typ.

5 nC Qgd Gate-Drain Charge 25 nC SWITCHING OFF Symbol Parameter Test Conditions Min. ID = 100µA 3 3. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. di/dt = 100A/µs 840 ns Qrr Reverse Recovery Charge VDD = 36V. ID = 3 A 17 ns tr Rise Time RG = 4. Typ. (3) Equivalent Output VGS = 0V.STP6NK90ZFP . Typ. Pulsed: Pulse duration = 300 µs. Max. Typ. Max. f = 1 MHz. TC = 125 °C 50 µA IGSS Gate-body Leakage VGS = ± 20V ±10 µA Current (VDS = 0) VGS(th) Gate Threshold Voltage VDS = VGS. ID = 2. 46. Unit ISD Source-drain Current 5.75 2 Ω Resistance DYNAMIC Symbol Parameter Test Conditions Min. 11 ns tf Fall Time RG = 4. ID = 3 A 45 ns tf Fall Time RG = 4. Typ. Max. VGS = 10V 12 ns tc Cross-over Time (Inductive Load see.8 A. Figure 5) 14 A Note: 1.5 V RDS(on) Static Drain-source On VGS = 10V. 3. Max. Unit V(BR)DSS Drain-source ID = 1mA. Unit td(off) Turn-off Delay Time VDD = 450 V. Max. Figure 3) Qg Total Gate Charge VDD = 720 V.9 A 1. Figure 3) tr(Voff) Off-voltage Rise Time VDD = 720V.STB6NK90Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min.7Ω . ID = 2.2 A VSD (1) Forward On Voltage ISD = 5. Figure 5) 20 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. VGS = 0 1.8 A. ID = 5. Tj = 150°C 5880 nC IRRM Reverse Recovery Current (see test circuit. duty cycle 1.5 nC Qgs Gate-Source Charge VGS = 10V 8. Unit gfs (1) Forward Transconductance VDS =15V. VDS = 0V to 720V 70 pF Capacitance SWITCHING ON Symbol Parameter Test Conditions Min. Coss eq.8 A ISDM (2) Source-drain Current (pulsed) 23. 3/12 . VGS = 10 V 20 ns (Resistive Load see.7Ω .5 %.75 4. VGS = 0 900 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating. Pulse width limited by safe operating area.9 A 5 S Ciss Input Capacitance VDS = 25V. VGS = 0 1350 pF Coss Output Capacitance 130 pF Crss Reverse Transfer 26 pF Capacitance Coss eq.8 A.VGS = 10 V 20 ns (Resistive Load see.8 A. Unit td(on) Turn-on Delay Time VDD = 450 V.6 V trr Reverse Recovery Time ISD = 5.7Ω . STP6NK90Z . ID = 5. 2. Typ.

STP6NK90ZFP .STB6NK90Z Safe Operating Area For TO-220/D2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/D2PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/12 .STP6NK90Z .

STB6NK90Z Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 .STP6NK90ZFP . STP6NK90Z .

STB6NK90Z Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/12 .STP6NK90Z .STP6NK90ZFP .

2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Fig. 1: Unclamped Inductive Load Test Circuit Fig.STP6NK90ZFP .STB6NK90Z Fig. STP6NK90Z . 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 . 4: Gate Charge test Circuit Resistive Load Fig.

203 G1 2.137 0.0 0.93 0.14 1.0 14.067 G 4.40 0.STB6NK90Z TO-220 MECHANICAL DATA mm inch DIM.61 0.65 2.260 L9 3. MIN.027 F 0.024 0.019 0. 3.85 0.STP6NK90Z .2 6.173 0.95 0. MAX.107 D1 1.600 0.23 1. TYP.6 0.106 H2 10.40 4.70 0.067 F2 1.050 E 0.STP6NK90ZFP .0 10.094 0.154 DIA.034 F1 1.75 0.393 0.27 0.75 3.048 0.88 0.15 0.95 5.70 0.4 0.7 0.511 0. TYP.49 0. A 4.147 0.244 0.409 L2 16.4 2.044 0.70 0.044 0.551 L5 2.620 L7 6.14 1.051 D 2. F F2 L5 L9 L7 L6 L4 P011C 8/12 .194 0.181 C 1. MIN.151 E A D C D1 L2 F1 G1 H2 G Dia.116 L6 15.094 0.60 0.40 2.32 0.25 15.72 0.104 0.5 3. MAX.645 L4 13.

409 L2 16 0.6 0. MIN.106 H 10 10. MAX.181 B 2.045 0.75 1 0.114 0.STP6NK90ZFP .5 2. MIN.366 Ø 3 3.4 0.067 F2 1.106 D 2.626 0.204 L4 9. A 4.6 30.030 0.6 0. STP6NK90Z . inch DIM.5 2.4 2.354 0.0385 0.098 0.039 F1 1.141 L6 15.9 3.2 0.45 0.3 0.027 F 0.15 1.108 E 0.098 0.094 0.8 10.STB6NK90Z TO-220FP MECHANICAL DATA mm.7 0.126 1.204 G1 2.15 1.045 0.2 0.75 0.6 1.417 L5 2.4 0.630 L3 28.95 5.118 0. TYP.645 L7 9 9.4 4.126 E A D B L3 L6 L7 F1 ¯ F G1 G H F2 1 2 3 L5 L2 L4 9/12 .6 . TYP MAX.7 0.393 0.195 0.067 G 4.5 0.173 0.017 0.7 0.9 16.5 0.

MIN.334 G 4.055 L3 1. MIN.69 0.95 9.027 0.173 0.4 1.STB6NK90Z D2PAK MECHANICAL DATA mm.23 0.393 E1 8.094 0.053 D 8.4 0.7 0.044 0.27 1.4 4.067 C 0.6 0.625 L2 1.017 0.STP6NK90ZFP .068 M 2.048 0.36 0.STP6NK90Z .75 0.4 0. TYP.050 0.35 0.352 0.001 0.5 0.85 0.181 A1 2.49 2.590 0.055 0.208 L 15 15.4 0.015 V2 0º 4º 3 10/12 1 .098 0. MAX. TYP MAX.93 0.28 0.036 B2 1.106 A2 0. A 4.368 D1 8 0.23 1.03 0.192 0.126 R 0.2 0.023 C2 1.14 1.88 5.4 3. inch DIM.7 0.45 0.315 E 10 10.6 0.009 B 0.

197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. A 330 12.456 K0 4.476 P2 1.059 0.4 0.65 1.1 0. MAX.9 4.1 0. STP6NK90Z .992 B 1.0137 W 23. MAX.075 0.59 1.7 24.4 26.0098 0.063 D1 1. A0 10.9 0.189 0. MIN. MAX.413 0.4 1.7 15.626 D 1.0 0.5 1.2 0795 G 24.059 C 12.3 0.STB6NK90Z 2 D PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA mm inch DIM.7 0.421 B0 15.9 2.062 0.063 E 1.2 0.937 T 30.6 0.504 0.574 T 0.9 12.4 11.6 0. MIN.933 0.449 0.039 N 100 3. MIN.8 13.065 0.082 R 50 1.073 F 11.197 P0 3.618 0. MIN.960 1.468 0.5 0.85 0.8 5. MAX.35 0.5 10.61 0.1 0.956 * on sales type 11/12 .520 D 20.153 0.STP6NK90ZFP .25 0.161 P1 11.

Finland .Switzerland .Israel .Malta .United States. This publication supersedes and replaces all information previously supplied.Brazil .Japan . © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics .STP6NK90ZFP . No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.China . STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.Canada .Germany . However.STP6NK90Z .France .All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia . Specifications mentioned in this publication are subject to change without notice.Morocco Singapore .Hong Kong .st.com 12/12 .Italy .STB6NK90Z Information furnished is believed to be accurate and reliable.Spain .United Kingdom . © http://www. STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.Malaysia .Printed in Italy .India .Sweden .