VS-ENQ030L120S

www.vishay.com
Vishay Semiconductors
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
FEATURES
• Ultrafast Trench IGBT technology
• HEXFRED® and silicon carbide diode technology
• PressFit pins technology
• Exposed Al2O3 substrate with low thermal resistance
• Low internal inductances
• PressFit pins locking technology. Patent # US.263.820 B2

EMIPAK-1B
• UL approved file E78996
(package example) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
PRODUCT SUMMARY
VS-ENQ030L120S is an integrated solution for a neutral
TRENCH IGBT 1200 V STAGE point clamp topology in a single package. The EMIPAK-1B
VCES 1200 V package is easy to use thanks to the PressFit pins and the
VCE(ON) typical at IC = 30 A 2.12 V exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
IC at TC = 102 °C 30 A
parameters, allowing for better EMI performance.
TRENCH IGBT 600 V STAGE 
VCES 600 V 
VCE(ON) typical at IC = 30 A 1.42 V


IC at TC = 106 °C 30 A 
Speed 8 kHz to 30 kHz 
Package EMIPAK-1B 

Circuit 3-levels neutral point clamp topology

ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature TJ 150
°C
Storage temperature range TStg -40 to +150
RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter voltage VCES 1200
V
Gate to emitter voltage VGES ± 30
Pulsed collector current ICM 120
A
Clamped inductive load current ILM (1) 120
TC = 25 °C 61
Continuous drain current IC TC = 80 °C 40 A
TSINK = 80 °C 21
TC = 25 °C 216
Power dissipation PD W
TC = 80 °C 121

PATENT(S): www.vishay.com/patents 
This Vishay product is protected by one or more United States and International patents.

Revision: 16-Jun-16 1 Document Number: 94684
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TJ = 125 °C . IC = 30 A . VCE = 0 V . DiodesEurope@vishay. - VGE = 15 V. .5 - Gate to emitter leakage current IGES VGE = ± 30 V.7 .D3 SILICON CARBIDE ANTIPARALLEL DIODE Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse. IC = 1 mA (25 °C to 125 °C) . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.001 0. S Transfer characteristics VGE VCE = 20 V.6 6.com.vishay. 7. IC = 30 A .1 .com/doc?91000 . L = 500 μH.6 Temperature coefficient of threshold VGE(th)/TJ VCE = VGE.31 - Gate threshold voltage VGE(th) VCE = VGE. TJ = 25 °C 180 A TC = 25 °C 46 Diode continuous forward current IF TC = 80 °C 30 A TSINK = 80 °C 17 TC = 25 °C 187 Power dissipation PD W TC = 80 °C 105 D2 . SET FORTH AT www.6 4. Rg = 4. CC = 600 V.52 Collector to emitter voltage VCE(ON) V VGE = 15 V. 2. . TJ = 150 °C (1) V CC = 300 V. IC = 1. TYP.D4 HEXFRED ANTIPARALLEL DIODE Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse. 36 .23 Zero gate voltage collector current ICES mA VGE = 0 V.com. Rg = 4. VS-ENQ030L120S www. IC = 100 μA 1200 . TJ = 25 °C 150 A TC = 25 °C 40 Diode continuous forward current IF TC = 80 °C 28 A TSINK = 80 °C 20 TC = 25 °C 140 Power dissipation PD W TC = 80 °C 79 Notes • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. mV/°C voltage Forward transconductance gfe VCE = 20 V. TJ = 150 °C (2) V   ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN.0 mA 2. 0. UNITS Q1 . MAX. DiodesAsia@vishay. UNITS Q2 . VGE = 15 V.Q3 TRENCH IGBT 600 V Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES ± 20 Pulsed collector current ICM 130 A Clamped inductive load current ILM (2) 130 TC = 25 °C 64 Continuous collector current IC TC = 80 °C 42 A TSINK = 80 °C 25 TC = 25 °C 174 Power dissipation PD W TC = 80 °C 97 D1 . ± 200 nA Revision: 16-Jun-16 2 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay. IC = 30 A .7 . V VGE = 0 V. 2.12 2. VGE = 15 V. 0. IC = 30 A. TJ = 125 °C .Q4 TRENCH IGBT 1200 V Collector to emitter breakdown voltage BVCES VGE = 0 V.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. VCE = 1200 V . VCE = 1200 V.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. L = 500 μH.vishay.14 .

9 .61 . 0.42 - Turn-on delay time td(on) VGE = 15 V .56 - Gate threshold voltage VGE(th) VCE = VGE. 21 .18 V Forward voltage drop VFM IF = 20 A.6 7.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 1. 157 - Gate to emitter charge (turn-on) Qge VCC = 600 V . TJ = 125 °C . pF Reverse transfer capacitance Cres f = 1 MHz . 1. mV/°C voltage Forward transconductance gfe VCE = 20 V. MAX.028 - Gate to emitter leakage current IGES VGE = ± 20 V. 93 - Rg = 4.8 Forward voltage drop VFM V IF = 20 A TJ = 125 °C . 0.D4 ANTIPARALLEL DIODE) Total gate charge (turn-on) Qg IC = 30 A . 39 - ns Turn-off delay time td(off) TJ = 125 °C (1) . VGE = 15 V to 0 V Revision: 16-Jun-16 3 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay. DiodesAsia@vishay. MAX.52 - Turn-off switching loss EOFF .D4 ANTIPARALLEL DIODE IF = 20 A .Q3 TRENCH IGBT 600 V Collector to emitter breakdown voltage BVCES VGE = 0 V.42 3.0003 0. mJ Total switching loss ETOT VCC = 600 V 2.24 VGE = 15 V Turn-on delay time td(on) . UNITS Q2 . 1. 75 - TJ = 150 °C.com. 136 - Fall time tf . 124 . 1.6 5. VS-ENQ030L120S www. 93 - Rise time tr Rg = 4. TYP. DiodesEurope@vishay. -17 . 0.7  Rise time tr L = 500 μH . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. mJ IC = 30 A Total switching loss ETOT VCC = 600 V . 1. VCE = 600 V. IC = 120 A.4 mA 3. TJ = 125 °C . - VGE = 15 V. .vishay. IC = 1.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. IC = 30 A . 1.32 - D2 . TJ = 125 °C . VCE = 0 V . V VGE = 0 V. 24 . IC = 1 mA (25 °C to 125 °C) .Q4 TRENCH IGBT (WITH FREEWHEELING D1 .54 1. 0. S Transfer characteristics VGE VCE = 20 V.7 .64 - Turn-off switching loss EOFF IC = 30 A  . IC = 30 A .  Reverse bias safe operating area RBSOA Fullsquare VP = 1200 V. nC Gate to collector charge (turn-on) Qgc VGE = 15 V . IC = 150 μA 600 .1 Temperature coefficient of threshold VGE(th)/TJ VCE = VGE. 133 - Fall time tf . IC = 30 A. UNITS Q1 . 39 - L = 500 μH (1) ns Turn-off delay time td(off) . 3338 - Output capacitance Coes VCC = 30 V . TYP.86 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. ± 200 nA D1 . IC = 30 A .com. 69 - Turn-on switching loss EON .vishay. VCE = 600 V . 193 - Input capacitance Cies VGE = 0 V . 2.com/doc?91000 . 2.23 Zero gate voltage collector current ICES mA VGE = 0 V. Rg = 4. VCC = 600 V.42 1. 0. 156 - Turn-on switching loss EON .D3 ANTIPARALLEL DIODE IF = 20 A . SET FORTH AT www.7  . 10 .87 Collector to emitter voltage VCE(ON) V VGE = 15 V.

A Diode recovery charge Qrr dl/dt = 500 A/μs . 0.7 . 30 . A Diode recovery charge Qrr dl/dt = 500 A/μs. pF Reverse transfer capacitance Cres f = 1 MHz . 73 . 91 - Fall time tf . 96 - Fall time tf . 135 . IC = 130 A Reverse bias safe operating area RBSOA VCC = 300 V. UNITS Q2 . nC D2 .8 . nC Diode reverse recovery time trr VR = 400 V . TYP. A Diode recovery charge Qrr dl/dt = 500 A/μs . 90 - TJ = 150 °C. 31 - ns Turn-off delay time td(off) TJ = 125 °C (1) .Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06) Total gate charge (turn-on) Qg IC = 48 A . 4.vishay. SET FORTH AT www. 1412 . MAX. 0. 16 . 0. ns Diode peak reverse current Irr IF = 20 A .com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN.33 - Turn-off switching loss EOFF IC = 30 A .26 . 95 - Gate to emitter charge (turn-on) Qge VCC = 400 V . 0. VP = 600 V Fullsquare Rg = 4. 21 . 3025 - Output capacitance Coes VCC = 30 V .48 . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. 78 . nC Gate to collector charge (turn-on) Qgc VGE = 15 V . 70 - Rise time tr Rg = 4.49 - Turn-on delay time td(on) VGE = 15 V . 31 . VGE = 15 V to 0 V D1 .7  . 245 . 31 - L = 500 μH (1) ns Turn-off delay time td(off) .com. 0. mJ Total switching loss ETOT VCC = 300 V . DiodesAsia@vishay. A Diode recovery charge Qrr dl/dt = 500 A/μs.D4 ANTIPARALLEL DIODE Diode reverse recovery time trr VR = 400 V . nC Diode reverse recovery time trr VR = 200 V . 117 - Input capacitance Cies VGE = 0 V . TJ = 125 °C .vishay. mJ IC = 30 A Total switching loss ETOT VCC = 300 V .23 - Turn-off switching loss EOFF .7  Rise time tr L = 500 μH .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.61 - VGE = 15 V Turn-on delay time td(on) .com/doc?91000 . 5 . 70 - Rg = 4. ns Diode peak reverse current Irr IF = 20 A . ns Diode peak reverse current Irr IF = 20 A . Revision: 16-Jun-16 4 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay. 35 - Turn-on switching loss EON . ns Diode peak reverse current Irr IF = 20 A . 0. 103 . TJ = 125 °C . DiodesEurope@vishay. 28 . 800 .D3 ANTIPARALLEL DIODE Diode reverse recovery time trr VR = 200 V .com. VS-ENQ030L120S www. nC Note (1) Energy losses include “tail” and diode reverse recovery. 87 - Turn-on switching loss EON .

Q3 TRENCH IGBT 600 V. °C/W Q2 .5 1. .72 RthJC D1 . 0. TYP.Typical Q1 . 28 .5 4. 3 Nm Weight . . . 0.THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS R25 TC = 25 °C 5000 Resistance  R100 TC = 100 °C 493 ± 5 % B-value B25/50 R2 = R25 exp. .Case to sink thermal resistance (per diode) . DiodesAsia@vishay. 0. 0.Q4 TRENCH IGBT 1200 V .com Vishay Semiconductors INTERNAL NTC .15 K))] 3375 ± 5 % K Maximum operating temperature 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. 0.5 VCE (V) VCE (V) Fig.78 - D2 .D4 AP diode .Case to sink thermal resistance (per switch) .Junction to case thermal resistance (per diode) . 1 . 0.5 2.com.5 3. DiodesEurope@vishay.5 2.65 - Case to sink thermal resistance (per module) .Q4 Trench IGBT 1200 V Fig.Typical Q1 . MAX. and greased 60 60 55 55 50 50 45 45 VGE = 9 V TJ = 25 °C 40 40 VGE = 12 V TJ = 125 °C 35 TJ = 150 °C 35 VGE = 15 V IC (A) IC (A) 30 30 VGE = 18 V 25 25 20 20 15 15 10 10 5 5 0 0 0 0.0 4. smooth. g Note (1) Mounting surface flat.Junction to case thermal resistance (per diode) . 2 .0 1.0 2.D3 AP diode . 0. SET FORTH AT www.5 4.0 3.0 1.Case to sink thermal resistance (per diode) RthCS (1) .vishay. UNITS Q1 .0 3. VS-ENQ030L120S www. [B25/50 (1/T2 .1/(298.Q4 Trench IGBT 1200 V Output Characteristics VGE = 15 V Output Characteristics TJ = 125 °C Revision: 16-Jun-16 5 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.5 3.Q4 TRENCH IGBT 1200 V . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.Case to sink thermal resistance (per switch) .Junction to case thermal resistance (per switch) .67 D2 .Junction to case thermal resistance (per switch) .vishay.D4 AP diode .75 .com/doc?91000 . 0.77 - D1 .0 0 0.com.Q3 TRENCH IGBT 600 V . 0.0 2.89 Q1 .5 1.58 Q2 .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.1 - Mounting torque (M4) 2 .D3 AP diode .

Q4 Trench IGBT 1200 V Fig.7 . Case Temperature Zero Gate Voltage Collector Current 60 3.0 1.vishay.5 TJ = 125 °C td(on) 3.1 80 60 0. 3 .Q4 Trench IGBT 1200 V Continuous Collector Current vs. VCC = 600 V.0 2. DiodesEurope@vishay. IC (with D1 .Continuous Collector Current (A) VCES (V) Fig. 4 .6 0.5 1000 5.4 1. 8 .D4 Freewheeling Diode) TJ = 125 °C.0 5. Rg = 4.com Vishay Semiconductors 160 10 Allowable Case Temperature (°C) 140 TJ = 150 °C 1 120 TJ = 125 °C DC 100 ICES (mA) 0.5 20 TJ = 25 °C 1. 6 .6 0 10 20 30 40 50 60 70 IC (mA) IC (A) Fig.Q4 Trench IGBT 1200 V Fig.4 0.Typical Q1 . DiodesAsia@vishay.com.0 8. SET FORTH AT www.0 15 10 Eon 0.com/doc?91000 .2 0. L = 500 μH 5. L = 500 μH Revision: 16-Jun-16 6 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay. VGE = 15 V.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. VS-ENQ030L120S www. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS. IC (with D1 .vishay.0001 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 1100 1200 IC .5 40 Energy (mJ) 35 2. VCC = 600 V.001 TJ = 25 °C 20 0 0.D4 Freewheeling Diode).0 50 45 2.0 10 0.Typical Q1 . Rg = 4.0 TJ = 25 °C Switching Time (ns) 4.com.0 7.Q4 Trench IGBT 1200 V Transfer Characteristics Energy Loss vs.5 tr 2.Maximum Q1 .Typical Q1 .0 9.Q4 Trench IGBT 1200 V Fig.0 6.7 .5 tf td(off) VGEth (V) 4.01 40 0.0 100 3.5 5 0 0 4.Typical Q1 .0 Eoff IC (A) 30 TJ = 125 °C 25 1.Q4 Trench IGBT 1200 V Gate Threshold Voltage Switching Time vs.2 1. VGE = 15 V. 5 .Typical Q1 .5 VCE = 20 V 55 3. TJ = 125 °C. 7 .8 1.0 0 10 20 30 40 50 60 70 VGE (V) IC (A) Fig.

9 .0 20 0. 12 .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. Rg (with D1 .5 2.D4 Freewheeling Diode) Reverse Recovery Time vs. VGE = 15 V.Typical Q1 .vishay.0 120 Energy (mJ) 2. VGE = 15 V. VCC = 600 V.0 4.Continuous Forward Current (A) Fig.Q4 Trench IGBT 1200 V Fig. L = 500 μH Vrr = 400 V. VCC = 600 V. IF = 20 A 60 24 22 50 5 20 18 125 °C 40 TJ = 125 °C 16 Irr (A) TJ = 150 °C IF (A) 30 14 12 20 10 25 °C 8 10 TJ = 25 °C 6 0 4 0 0.5 4.0 1. 14 . Case Temperature TJ = 125 °C. 11 .D4 Antiparallel Diode Switching Time vs.D4 Antiparallel Diode Forward Characteristics Fig. dIF/dt TJ = 125 °C.com Vishay Semiconductors 3.5 0 0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 60 Rg (Ω) IF .0 3. IC = 30 A. dIF/dt Vrr = 400 V. IF = 20 A Revision: 16-Jun-16 7 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.Q4 Trench IGBT 1200 V Fig.com/doc?91000 .5 3.Maximum D1 . L = 500 μH 1000 270 250 td(on) 230 Switching Time (ns) td(off) 210 190 125 °C trr (ns) tf 100 170 tr 15 150 130 110 25 °C 10 90 0 5 10 15 20 25 30 35 40 45 50 55 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig.D4 Antiparallel Diode Energy Loss vs. SET FORTH AT www. DiodesEurope@vishay.5 1.0 80 60 1. DiodesAsia@vishay.vishay.5 Eoff 40 1.com.Typical D1 . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.D4 Freewheeling Diode) Forward Current vs. IC = 30 A. 13 . VS-ENQ030L120S www.5 100 200 300 400 500 VFM (V) dIF/dt (A/μs) Fig. Rg (with D1 .Typical Q1 .5 Eon 100 2.Typical D1 .0 2.Typical D1 .D4 Antiparallel Diode Reverse Recovery Current vs.com. 10 .5 160 Allowable Case Temperature (°C) 140 3.

1 1 10 t1 .1 D = 0.00001 0.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.Maximum Thermal Impedance ZthJC Characteristics (Q1 .001 0.05 D = 0.01 DC 0.1 0.001 0. dIF/dt Vrr = 400 V.com/doc?91000 .Typical D1 .D4 Antiparallel Diode Reverse Recovery Charge vs. 0.01 0.2 D = 0. 16 .001 0.Thermal Impedance Junction to Case (°C/W) 1 0.Thermal Impedance Junction to Case (°C/W) 1 0. 17 .D4 Antiparallel Diode) Revision: 16-Jun-16 8 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.com. SET FORTH AT www. IF = 20 A 10 ZthJC .Maximum Thermal Impedance ZthJC Characteristics (D1 .com.1 1 10 t1 .com Vishay Semiconductors 1700 1500 125 °C 1300 Qrr (nC) 1100 900 700 25 °C 500 300 100 200 300 400 500 dIF/dt (A/μs) Fig.05 D = 0.1 0. VS-ENQ030L120S www.0001 0.02 D = 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.vishay.2 D = 0.5 D = 0.Rectangular Pulse Duration (s) Fig.01 D = 0.001 0.01 0. 0.00001 0.Rectangular Pulse Duration (s) Fig.01 D = 0.02 D = 0.1 D = 0. DiodesAsia@vishay.vishay.0001 0. 15 .01 DC 0.Q4 Trench IGBT 1200 V) 10 ZthJC . DiodesEurope@vishay.5 D = 0.

00001 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80 IC .Q3 Trench IGBT 600 V Output Characteristics Fig.5 2.Continuous Collector Current (A) VCES (V) Fig. Case Temperature Revision: 16-Jun-16 9 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.5 1.5 10 3.Typical Q2 .vishay.3 0.1 1.Typical Q2 .7 1.com.com Vishay Semiconductors 60 60 55 55 VCE = 20 V 50 50 45 45 40 TJ = 25 °C 40 TJ = 125 °C 35 TJ = 125 °C 35 ICE (A) IC (A) 30 TJ = 150 °C 30 25 25 20 2 20 TJ = 25 °C 15 15 10 10 5 5 0 0 0 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.9 VCE (V) IC (mA) Fig.5 3 5 6 7 8 9 10 11 12 13 VCE (V) VGE (V) Fig.5 0 0. 19 .0 5 0 2.5 1.Q3 Trench IGBT 600 V Zero Gate Voltage Collector Current Continuous Collector Current vs.9 1.0 0.Typical Q2 . VS-ENQ030L120S www.Q3 Trench IGBT 600 V VGE = 15 V Transfer Characteristics 60 6.5 2 2.0 20 15 3. SET FORTH AT www.0 2.5 25 TJ = 125 °C 4. DiodesEurope@vishay.0 50 TJ = 25 °C 45 VGE = 18 V 5. 23 .Q3 Trench IGBT 600 V TJ = 125 °C Gate Threshold Voltage 160 1 Allowable Case Temperature (°C) TJ = 150 °C 140 0.vishay.Maximum Q2 . 18 .Q3 Trench IGBT 600 V Fig.0 1.5 3.com.7 0. 22 .001 60 TJ = 25 °C 40 0.1 120 TJ = 125 °C 100 DC 0.com/doc?91000 .5 40 VGE = 15 V 5.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.5 0. DiodesAsia@vishay.5 1 1.Q3 Trench IGBT 600 V Output Characteristics Fig.1 0.Typical Q2 .3 1. 21 .0001 20 0 0.Typical Q2 .01 ICES (mA) 80 0.0 VGEth (V) 35 VGE = 12 V IC (A) 30 VGE = 9 V 4.5 55 6. 20 .

29 .Q3 Trench IGBT 600 V Switching Time vs. VCC = 300 V.0 4. VGE = 15 V.D3 Antiparallel Diode Fig.Q3 Trench IGBT 600 V Energy Loss vs.4 tr 0.2 1000 1.5 3.Typical Q2 .vishay. IC Forward Characteristics (with Freewheeling External TO-247 Diode Discrete 30ETH06) TJ = 125 °C.Typical Q2 .5 5. VGE = 15 V. L = 500 μH 160 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.Q3 Trench IGBT 600 V Switching Time vs.vishay. VGE = 15 V.0 1. Rg (with Freewheeling External TO-247 Diode Discrete 30ETH06 ) (with Freewheeling External TO-247 Diode Discrete 30ETH06) TJ = 125 °C. Case Temperature (with Freewheeling External TO-247 Diode Discrete 30ETH06) TJ = 125 °C. L = 500 μH TJ = 125 °C.6 100 tf 0.80 Allowable Case Temperature (°C) 0.9 Eoff td(on) 0. IC = 30 A.5 4.7 0. VCC = 300 V. VGE = 15 V. DiodesAsia@vishay.0 0 10 20 30 40 50 60 70 VFM (V) IC (A) Fig.3 0. VCC = 300 V.7 .2 0.0 2. DiodesEurope@vishay. 28 . IC Fig.0 3.Q3 Trench IGBT 600 V Energy Loss vs.40 40 0.75 140 0. L = 500 μH Revision: 16-Jun-16 10 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.Continuous Forward Current (A) Rg (Ω) Fig.0 Switching Time (ns) 0.1 0 10 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 55 IC (A) Rg (Ω) Fig.Typical Q2 . Rg Forward Current vs.Typical Q2 .55 Eoff 80 0. IC =30 A. 25 .com.5 Eon 0.30 20 Eon 0. VCC = 300 V.5 1.Typical D2 .45 60 0.5 2. VS-ENQ030L120S www.65 0. 27 .25 0 0.com.50 0. Rg = 4. L = 500 μH 1.com/doc?91000 . 26 .com Vishay Semiconductors 60 1000 55 50 TJ = 25 °C 45 TJ = 150 °C Switching Time (ns) 40 tf 35 TJ = 125 °C td(off) IF (A) 30 100 25 td(on) 20 15 tr 10 5 0 10 0 0.8 td(off) Energy (mJ) 0.70 120 0.1 1.60 100 Energy (mJ) 0. SET FORTH AT www.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.7 .Maximum D2 . 24 .35 0.D3 Antiparallel Diode Fig.20 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55 IF . Rg = 4.

00001 0.01 DC 0. 33 .com.0001 0.5 60 4.0 100 200 300 400 500 100 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig.5 D = 0.1 0. dIF/dt Reverse Recovery Current vs.0 125 °C 55 trr (ns) Irr (A) 50 3. VS-ENQ030L120S www. SET FORTH AT www.0 30 25 1. IF = 20 A 90 85 80 125 °C Qrr (nC) 75 25 °C 70 65 60 100 200 300 400 500 dIF/dt (A/μs) Fig. 31 .01 0.01 D = 0.Rectangular Pulse Duration (s) Fig.D3 Antiparallel Diode Reverse Recovery Time vs.Thermal Impedance Junction to Case (°C/W) 1 0.vishay. IF = 20 A 10 ZthJC .Typical D2 .5 35 25 °C 2.5 20 1.0 65 4.D3 Antiparallel Diode Reverse Recovery Charge vs.001 0.0 40 125 °C 25 °C 2.05 D = 0.1 1 10 t1 . IF = 20 A Vrr = 200 V.2 D = 0.5 70 5. dIF/dt Vrr = 200 V. DiodesEurope@vishay.0 75 5.1 D = 0. 30 . dIF/dt Vrr = 200 V.D3 Antiparallel Diode Fig.vishay.Q3 Trench IGBT 600 V) Revision: 16-Jun-16 11 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.Typical D2 .5 45 3.Typical D2 .com Vishay Semiconductors 80 6.Maximum Thermal Impedance ZthJC Characteristics (Q2 . 0.com/doc?91000 .001 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.02 D = 0. 32 .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.com. DiodesAsia@vishay.

Voltage rating (120 = 1200 V) 7 .5 D = 0.com/doc?91000 .2 0.D3 Antiparallel Diode) ORDERING INFORMATION TABLE Device code VS.com. DiodesEurope@vishay. Current rating (030 = 30 A) 5 .vishay. Switch die technology (L = ultrafast Trench IGBT 1200 V and Trench IGBT 600 V) 6 .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. Package indicator (EN = EMIPAK-1B) 3 . 34 .01 0. Circuit configuration (Q = neutral point clamp topology) 4 .001 0. VS-ENQ030L120S www.1 D = 0. Vishay Semiconductors product 2 .Rectangular Pulse Duration (s) Fig.Maximum Thermal Impedance ZthJC Characteristics (D2 .1 D = 0.01 0.00001 0.1 1 10 t1 .com.02 D = 0. DiodesAsia@vishay. EN Q 030 L 120 S 1 2 3 4 5 6 7 1 .0001 0. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.com Vishay Semiconductors 10 ZthJC . Diode die technology (S = SiC diode) Revision: 16-Jun-16 12 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.05 D = 0.01 DC 0.vishay.Thermal Impedance Junction to Case (°C/W) 1 D = 0. SET FORTH AT www.

2 T1 T2 BR BR BR G4 E4 12.8 12.8 9. VS-ENQ030L120S www.6 3.com/doc?91000 .6 12.com.8 DC- DC+ DC+ M M DC- 3. DiodesAsia@vishay.2 3. SET FORTH AT www.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.vishay.vishay.2 3.com/doc?95558 Revision: 16-Jun-16 13 Document Number: 94684 For technical questions within your region: DiodesAmericas@vishay.com. DiodesEurope@vishay. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.8 E1 G3 E3 E2 G2 G1 9.vishay.2 LINKS TO RELATED DOCUMENTS Dimensions www.com Vishay Semiconductors CIRCUIT CONFIGURATION DC+ DC+ T1 E3 G3 Q1 T2 D1 Q3 D2 G1 E1 M BR BR M BR D3 Q4 Q2 D4 G4 E4 DC- DC- PACKAGE 16 16 12.

4 ± 0.3 6.5 ± 0.1 Ø 3.8 9.com.4 Ø 9.6 12.3 62.3 6.vishay.6 Typical pin position 0.com Vishay Semiconductors EMIPAK-1B PressFit DIMENSIONS in millimeters 3 ± 0.4 9.3 30.5 53 ± 0.5 28.8 ± 0.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.9 ± 0.8 ± 0.com/doc?91000 . DiodesAsia@vishay.5 .4 6.2 . THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS.3 33.3 37 ± 0.35 4.4 ± 0.6 9.5 42.vishay.4 12.com. DiodesEurope@vishay.8 16 16 Revision: 18-May-17 1 Document Number: 95558 For technical questions within your region: DiodesAmericas@vishay.8 3.8 12.5 16.2 3. SET FORTH AT www.15 48 ± 0.2 12.1 ±0 3. Outline Dimensions www.6 6.1 ± 0.4 20.5 x8 2.2 4.1 ± 0.2 12 ± 0.

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