SEMiX305TMLI17E4C

Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT1
VCES Tj = 25 °C 1700 V
IC Tc = 25 °C 486 A
Tj = 175 °C
Tc = 80 °C 376 A
ICnom 300 A
ICRM ICRM = 3 x ICnom 900 A
VGES -20 ... 20 V
SEMiX® 5 tpsc
VCC = 1000 V, VGE ≤ 15 V, Tj = 150 °C,
10 µs
VCES ≤1700 V
Tj -40 ... 175 °C
3-Level TNPC IGBT-Module IGBT2
VCES Tj = 25 °C 1200 V
Evaluation Sample
IC Tc = 25 °C 407 A
SEMiX305TMLI17E4C Tj = 175 °C
Tc = 80 °C 312 A
Target Data ICnom 300 A
ICRM ICRM = 3 x ICnom 900 A
Features
VGES -20 ... 20 V
• Solderless assembling solution with
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
PressFIT signal pins and screw power tpsc 10 µs
VCES ≤ 1200 V
terminals
• IGBT 4 Trench Gate Technology Tj -40 ... 175 °C
• VCE(sat) with positive temperature Diode1
coefficient VRRM Tj = 25 °C 1700 V
• Low inductance case
IF Tc = 25 °C 338 A
• Reliable mechanical design with Tj = 175 °C
injection moulded terminals and Tc = 80 °C 250 A
reliable internal connections IFnom 300 A
• UL recognized file no. E63532 IFRM IFRM = 2 x IFnom 600 A
• NTC temperature sensor inside
IFSM 10 ms, sin 180°, Tj = 25 °C 1836 A
Remarks* Tj -40 ... 175 °C
• Case temperature limited to TC=125°C Diode2
max.
VRRM Tj = 25 °C 1200 V
• Product reliability results are valid for
Tjop=150°C IF Tc = 25 °C 312 A
Tj = 175 °C
• IGBT1: outer IGBTs T1 & T4 Tc = 80 °C 232 A
• IGBT2: inner IGBTs T2 & T3 IFnom 300 A
• Diode1: outer diodes D1 & D4
IFRM IFRM = 2 x IFnom 600 A
• Diode2: inner diodes D2 & D3
• Dynamic data are estimated IFSM 10 ms, sin 180°, Tj = 25 °C 1620 A
• For storage and case temperature with Tj -40 ... 175 °C
TIM see document “ TP (HALA P8) Module
SEMiX5p “
It(RMS) 400 A
Tstg module without TIM -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V

TMLI

© by SEMIKRON Rev. 0.4 – 21.03.2017 1

8 6.2017 © by SEMIKRON .20 2. VCE = 1200 V.8 6. VCE = 1700 V.+15V 1700 nC RGint Tj = 25 °C 2.06 nF VGE = 0 V Evaluation Sample Cres f = 1 MHz 0.8V. 0.90 2. Tj = 25 °C 3.80 0.4 V ICES VGE = 0 V.02 nF QG VGE = ..3 6.018 K/W material • NTC temperature sensor inside IGBT2 Remarks* VCE(sat) IC = 300 A Tj = 25 °C 1. max.4 – 21.2 5.60 V VCE0 Tj = 25 °C 0. Unit IGBT1 VCE(sat) IC = 300 A Tj = 25 °C 1.81 W/(m*K)) 0.7 4.5 Ω td(on) VCC = 1200 V Tj = 150 °C 94 ns tr IC = 300 A Tj = 150 °C 75 ns VGE = +15/-8 V Eon Tj = 150 °C 42 mJ RG on = 1 Ω td(off) RG off = 1 Ω Tj = 150 °C 481 ns tf di/dton = 3415 A/µs Tj = 150 °C 124 ns di/dtoff = 2153 A/µs Eoff du/dt = 5133 V/µs Tj = 150 °C 35 mJ Rth(j-c) per IGBT 0..40 V max.5 V • Dynamic data are estimated ICES VGE = 0 V.3 mΩ • Diode2: inner diodes D2 & D3 VGE(th) VGE = VCE.. pre-applied phase change Rth(c-s) 0.12 K/W Rth(c-s) per IGBT (λgrease=0.7 mA 3-Level TNPC IGBT-Module Cies VCE = 25 V f = 1 MHz 27.80 0.048 K/W per IGBT.3 3.+15V 2400 nC Target Data RGint Tj = 25 °C 2.20 V VGE = 15 V chiplevel Tj = 150 °C 2. pre-applied phase change • UL recognized file no.90 V Tjop=150°C chiplevel Tj = 150 °C 0.81 W/(m*K)) 0. E63532 Rth(c-s) 0.0 mΩ SEMiX® 5 VGE(th) VGE = VCE.03.80 2.08 K/W injection moulded terminals and Rth(c-s) per IGBT (λgrease=0.8V.70 0.30 2.1 Ω td(on) VCC = 1200 V Tj = 150 °C 135 ns Features tr IC = 300 A Tj = 150 °C 73 ns • Solderless assembling solution with VGE = +15/-8 V Eon Tj = 150 °C 38 mJ PressFIT signal pins and screw power RG on = 1 Ω td(off) RG off = 1 Ω Tj = 150 °C 583 ns terminals • IGBT 4 Trench Gate Technology tf di/dton = 3765 A/µs Tj = 150 °C 139 ns • VCE(sat) with positive temperature di/dtoff = 1725 A/µs coefficient Eoff du/dt = 3962 V/µs Tj = 150 °C 60 mJ • Low inductance case • Reliable mechanical design with Rth(j-c) per IGBT 0.029 K/W reliable internal connections per IGBT.3 mΩ chiplevel Tj = 150 °C 5.0 5.90 V chiplevel Tj = 150 °C 0. typ.2 nF Coes f = 1 MHz 1.8 mΩ • IGBT2: inner IGBTs T2 & T3 • Diode1: outer diodes D1 & D4 chiplevel Tj = 150 °C 5.05 V • Case temperature limited to TC=125°C VGE = 15 V chiplevel Tj = 150 °C 2.6 nF TIM see document “ TP (HALA P8) VCE = 25 V SEMiX5p “ Coes f = 1 MHz 1. IC = 12 mA 5 5..031 K/W material TMLI 2 Rev.SEMiX305TMLI17E4C Characteristics Symbol Conditions min.70 0. • Product reliability results are valid for VCE0 Tj = 25 °C 0.16 nF VGE = 0 V Cres f = 1 MHz 1.80 V • IGBT1: outer IGBTs T1 & T4 rCE VGE = 15 V Tj = 25 °C 3.80 V rCE VGE = 15 V Tj = 25 °C 3. IC = 12 mA 5. Tj = 25 °C 4 mA • For storage and case temperature with Cies f = 1 MHz 18.88 nF SEMiX305TMLI17E4C QG VGE = .

8 mΩ chiplevel Tj = 150 °C 3.2 mΩ chiplevel • Reliable mechanical design with Tj = 150 °C 3.3 2.14 2.05 K/W max.8 µC • UL recognized file no. 0.005 K/W including thermal coupling.035 K/W Target Data per diode.04 K/W Tjop=150°C material • IGBT1: outer IGBTs T1 & T4 Module • IGBT2: inner IGBTs T2 & T3 LsCE1 31 nH • Diode1: outer diodes D1 & D4 • Diode2: inner diodes D2 & D3 LCE 42 nH • Dynamic data are estimated RCC'+EE' measured TC = 25 °C 0.38 V • IGBT 4 Trench Gate Technology VF0 Tj = 25 °C 1.SEMiX305TMLI17E4C Characteristics Symbol Conditions min.0055 K/W phase change material Ms to heat sink (M5) 3 6 Nm Mt to terminals (M6) 3 6 Nm Nm w 398 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω 3550 B100/125 R(T)=R100exp[B100/125(1/T-1/T100)].30 1.5 4.9 4.90 1. • Product reliability results are valid for per diode.22 V rF Tj = 25 °C 2. K ±2% TMLI © by SEMIKRON Rev.56 V chiplevel Tj = 150 °C 1.40 V VGE = 0 V chiplevel Tj = 150 °C 2. T[K].81 W/ 0.1 mΩ TIM see document “ TP (HALA P8) SEMiX5p “ Rth(c-s)1 calculated without thermal coupling 0.3 mΩ injection moulded terminals and IRRM IF = 300 A Tj = 150 °C 194. Rth(c-s)2 Ts underneath module.32 1.8 mΩ • For storage and case temperature with between terminal 5 and 1 TC = 125 °C 1. pre-applied phase change Rth(c-s) 0.21 K/W • Case temperature limited to TC=125°C Rth(c-s) per diode (λgrease=0. E63532 VR = 1200 V • NTC temperature sensor inside Err VGE = +15/-8 V Tj = 150 °C 13 mJ Remarks* Rth(j-c) per diode 0.10 V coefficient • Low inductance case rF Tj = 25 °C 2.07 2.03.7 µC j VCC = 1200 V 3-Level TNPC IGBT-Module Err VGE = +15/-8 V Tj = 150 °C 38 mJ Evaluation Sample Rth(j-c) per diode 0.2017 3 .03 K/W material Features Diode2 • Solderless assembling solution with VF = VEC IF = 300 A Tj = 25 °C 2.6 A reliable internal connections di/dtoff = 3765 A/µs T = 150 °C Qrr j 37.56 V VF0 Tj = 25 °C 1. pre-applied 0.8 3.5 mΩ SEMiX® 5 IRRM IF = 300 A Tj = 150 °C 216. Unit Diode1 VF = VEC IF = 300 A Tj = 25 °C 2.00 2.81 W/(m*K)) 0.2 A Qrr di/dtoff = 3415 A/µs T = 150 °C 88. Rth(c-s)2 Ts underneath module (λgrease=0.08 1.46 V PressFIT signal pins and screw power VGE = 0 V terminals chiplevel Tj = 150 °C 2.14 2.17 K/W SEMiX305TMLI17E4C Rth(c-s) per diode (λgrease=0. max.0079 K/W (m*K)) including thermal coupling.4 – 21.50 V • VCE(sat) with positive temperature chiplevel Tj = 150 °C 0. typ. pre-applied phase change Rth(c-s) 0.81 W/(m*K)) 0.

2017 © by SEMIKRON . 4: Typ. 0. IGBT1 transfer characteristic Fig. IGBT1 & Diode2 turn-on /-off energy = f(RG) Fig. RCC'+ EE' Fig.4 – 21.SEMiX305TMLI17E4C Fig. IGBT1 & Diode2 turn-on /-off energy = f (IC) Fig. Temperature Ic=f(Tc) Fig. 1: Typ. 5: Typ.03. incl. 3: Typ. 6: Typ. IGBT1 output characteristic. 2: IGBT1 rated current vs. IGBT1 gate charge characteristic 4 Rev.

Diode2 forward characteristic. Temperature Ic= f (Tc) © by SEMIKRON Rev. 9: Transient thermal impedance of IGBT1 & Diode2 Fig. incl. RCC'+ EE' Fig. 8: Typ.03.SEMiX305TMLI17E4C Fig.4 – 21. 7: Typ. IGBT2 output characteristic. 10: Typ. IGBT1 switching times vs. gate resistor RG Fig.2017 5 . IGBT1 switching times vs. incl. RCC'+ EE' Fig. 14: IGBT2 Rated current vs. IC Fig. 0. 13: Typ.

03.SEMiX305TMLI17E4C Fig. IGBT2 transfer characteristic Fig. IC Fig. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 18: Typ. 20: Typ. IGBT2 switching times vs. gate resistor RG 6 Rev. 17: Typ. 16: Typ. 19: Typ.2017 © by SEMIKRON . IGBT2 & Diode1 turn-on / -off energy = f(RG) Fig. 0.4 – 21. 15: Typ. IGBT2 gate charge characteristic Fig. IGBT2 switching times vs.

22: Typ. Diode1 forward characteristic. incl.SEMiX305TMLI17E4C Fig.03. RCC'+ EE' © by SEMIKRON Rev.4 – 21. 21: Transient thermal impedance of IGBT2 & Diode1 Fig.2017 7 . 0.

SEMiX305TMLI17E4C SEMiX5p TMLI 8 Rev.03.4 – 21. 0.2017 © by SEMIKRON .

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