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fairchildsemi. TL 300 °C 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Unit RθJC Thermal Resistance. RDS(on)=530 mΩ(Max.) @VGS=-10 V. -100 V. and to provide superior • 100% Avalanche Tested switching performance and high avalanche energy • 175°C Maximum Junction Temperature Rating strength.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -6.5 °C/W ©2002 Fairchild Semiconductor Corporation www. 62. audio amplifier.0 V/ns PD Power Dissipation (TC = 25°C) 65 W .0 A .7 A IDM Drain Current . -8 A.31 °C/W RθCS Thermal Resistance. Junction-to-Ambient -. C0 .Pulsed (Note 1) -32 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ IAR Avalanche Current (Note 1) -8. 12 nC) planar stripe and DMOS technology. 530 mΩ Description Features This P-Channel enhancement mode power MOSFET is • -8 A. 30 pF) reduce on-state resistance.Continuous (TC = 100°C) -5.0 A EAR Repetitive Avalanche Energy (Note 1) 6.5 -. These devices are suitable for switched mode power supplies. D G G DS TO-220 S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP8P10 Unit VDSS Drain-Source Voltage -100 V ID Drain Current .43 W/°C TJ. °C/W RθJA Thermal Resistance. DC motor control. ID=-4 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. TSTG Operating and Storage Temperature Range -55 to +175 °C Maximum lead temperature for soldering purposes. FQP8P10 P-Channel MOSFET March 2013 FQP8P10 P-Channel QFET® MOSFET -100 V. This advanced MOSFET technology has been especially tailored to • Low Crss (Typ. Junction-to-Case -. and variable switching power applications. 2.com FQP8P10 Rev.Derate above 25°C 0. Case-to-Sink 0.Continuous (TC = 25°C) -8.

-100 nA IGSSR Gate-Body Leakage Current. 3. VDS = 0 V -. -. C0 . -. 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS. -. Repetitive Rating : Pulse width limited by maximum junction temperature 2.5mH. IS = -8. VGS = 0 V.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -. 11 30 ns VDD = -50 V. S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V.0 V trr Reverse Recovery Time VGS = 0 V. IS = -8. 110 230 ns RG = 25 Ω td(off) Turn-Off Delay Time -.1 -. VDD = -25V. -8. -. Starting TJ = 25°C 4.0 A (Note 4) -. V/°C / ∆TJ Coefficient IDSS VDS = -100 V. 35 80 ns Qg Total Gate Charge VDS = -80 V. VDD ≤ BVDSS. 5) -. -. -. ID = -4. ISD ≤ -8. -.0A. -0. 0. -4. 98 -.0 A -. -. 5) tf Turn-Off Fall Time -. -4. µC Notes: 1. -. 360 470 pF Coss Output Capacitance f = 1. TC = 150°C -. 30 40 pF Switching Characteristics td(on) Turn-On Delay Time -. FQP8P10 P-Channel MOSFET Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V.0 -. -32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V.41 0. 120 155 pF Crss Reverse Transfer Capacitance -. V ∆BVDSS Breakdown Voltage Temperature ID = -250 µA.0 V RDS(on) Static Drain-Source VGS = -10 V. ID = -4.4 -. di/dt ≤ 300A/µs. L = 3. nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -. Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation www. Forward VGS = -30 V. -10 µA IGSSF Gate-Body Leakage Current. 12 15 nC Qgs Gate-Source Charge VGS = -10 V -. -1 µA Zero Gate Voltage Drain Current VDS = -80 V.0 A.53 Ω On-Resistance gFS Forward Transconductance VDS = -40 V. ID = -8.fairchildsemi.0 -.0 A. 6. Reverse VGS = 30 V.0 A. ID = -8.3 -.35 -. -.0A. VGS = 0 V -. nC Qgd Gate-Drain Charge (Note 4. Pulse Test : Pulse width ≤ 300µs.com FQP8P10 Rev. Starting TJ = 25°C 3. VDS = 0 V -.0 MHz -.0 A -. Referenced to 25°C -. tr Turn-On Rise Time -. -. ID = -250 µA -2. ID = -250 µA -100 -. ns Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -. 20 50 ns (Note 4. 0. 4. RG = 25 Ω. IAS = -8.

Gate Charge Characteristics ©2002 Fairchild Semiconductor Corporation www. Drain-Source Voltage [V] QG.0 V 10 -7.6 0 10 175℃ 25℃ 0.0 1.0 A 0 0 10 -1 10 0 10 1 0 2 4 6 8 10 12 14 -VDS.5 V 10 175℃ 0 10 25℃ -1 10 -55℃ ※ Notes : ※ Notes : 1. FQP8P10 P-Channel MOSFET Typical Characteristics VGS Top : -15. VGS = 0V ※ Note : TJ = 25℃ 2.5 V -I D .0 V 1 -10. 250μ s Pulse Test 2.0 2. 250μ s Pulse Test 2. Drain Current [A] -VSD . Gate-Source Voltage [V] Figure 1.5 1. Drain-Source Voltage [V] -VGS . 0. VDS = -40V 1.10V 1 10 Drain-Source On-Resistance -I DR . Drain Current [A] -ID.com FQP8P10 Rev.0 -ID .0 0.5 3.3 ※ Notes : 1. Reverse Drain Current [A] RDS(on) [ Ω ]. VGS = 0 V 500 2.0 10 -1 0 5 10 15 20 25 0. Figure 4.9 VGS = . Gate-Source Voltage [V] VDS = -80V 600 ※ Notes : 8 Capacitance [pF] 1. Transfer Characteristics 1. 250μ s Pulse Test 0. C0 .20V 0. On-Resistance Variation vs. Total Gate Charge [nC] Figure 5.fairchildsemi. TC = 25℃ -2 -1 10 10 10 -1 10 0 10 1 2 4 6 8 10 -VDS.5 1.5 2. Source Current and Temperature 900 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 800 Coss Crss = Cgd VDS = -20V 10 700 Ciss VDS = -50V -V GS .2 VGS = . f = 1 MHz 6 400 Crss 300 4 200 2 100 ※ Note : ID = -8.5 V -5. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. On-Region Characteristics Figure 2. Drain Current [A] -5.0 V 0 Bottom : -4. Source-Drain Voltage [V] Figure 3.0 V -6.0 V 10 1 -8. Capacitance Characteristics Figure 6.

(Normalized) RDS(ON) .0 1.0 2 PDM 0 .0 2. C0 . (Normalized) 2. Junction Temperature [ C] Figure 7. D u ty F a c t o r . Drain Current [A] -I D.5 1.0 A 0.0 1.1 Drain-Source On-Resistance -BV DSS .0 -100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200 o o TJ. Temperature 10 2 10 Operation in This Area is Limited by R DS(on) 8 100 µs 1 ms -I D. FQP8P10 P-Channel MOSFET Typical Characteristics (Continued) 1.2 1 . Case Temperature [℃] Figure 9. T J M .0 5 -1 10 0 . 2 . Maximum Drain Current vs.com FQP8P10 Rev. VGS = -10 V 2.5 1. TJ = 175 C 3. VGS = 0 V ※ Notes : 2. On-Resistance Variation vs. D = t 1 /t 2 0 . Z θ J C ( t ) = 2 .2 3. Case Temperature ( t) .fairchildsemi. Temperature vs. 3 1 ℃ /W M a x . TC = 25 C o 2. S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Single Pulse -1 10 0 10 0 10 1 10 2 25 50 75 100 125 150 175 -VDS. ID = -250 μ A 0. Breakdown Voltage Variation Figure 8. Drain-Source Voltage [V] TC.0 0.0 1 JC t1 s in g le p u ls e θ t2 Z -2 10 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 t 1 .T C = P D M * Z θ J C( t ) 0 . T h e r m a l R e s p o n s e 0 D = 0 . Junction Temperature [ C] TJ.5 Drain-Source Breakdown Voltage 1.5 10 ※ N o te s : 0 . Maximum Safe Operating Area Figure 10.1 3 . Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation www.9 ※ Notes : 1.8 0. ID = -4. Drain Current [A] 1 10 6 10 ms DC 4 0 10 ※ Notes : o 2 1.

FQP8P10 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type 50KΩ as DUT Qg 12V 200nF 300nF -10V VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms RL VDS t on t off td(on) tr td(off) VGS VDD tf RG VGS 10% -10V DUT 90% VDS Unclamped Inductive Switching Test Circuit & Waveforms L 1 BVDSS VDS EAS = ---.VDD tp Time ID RG VDD VDS (t) VDD ID (t) -10V DUT IAS tp BVDSS ©2002 Fairchild Semiconductor Corporation www. C0 .fairchildsemi.L IAS2 -------------------- 2 BVDSS .com FQP8P10 Rev.

C0 . FQP8P10 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG Compliment of DUT (N-Channel) VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width VGS D = -------------------------- Gate Pulse Period 10V ( Driver ) Body Diode Reverse Current I SD ( DUT ) IRM di/dt IFM .fairchildsemi.com FQP8P10 Rev. Body Diode Forward Current VDS VSD ( DUT ) Body Diode VDD Forward Voltage Drop Body Diode Recovery dv/dt ©2002 Fairchild Semiconductor Corporation www.

com FQP8P10 Rev. FQP8P10 P-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation www. C0 .fairchildsemi.

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