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26 2 Vol. 26 No.

2
2005 2 CHIN ESE J OU RNAL OF SEM ICONDUCTORS Feb. ,2005

TiO2
1 ,2 1 1 1 1
(1 , 300130)
(2 , 066600)

: TiO2 , ,
. TiO2 , , 400 , 400
. 0141eV , TiO2 .

: ; TiO2 ; ;
PACC : 0670 ; 7360 ; 8140
: TN03 : A : 025324177 ( 2005) 0220324205

TiO2 . Ar ,O2 ,
1 .
470V , 013A , 0123 Pa , 116 Pa ,
TiO2


150 , 130min.

210 10 - 3 Pa , 9cm.

300 ,
. TiO2
500 ,700 ,900 1100 , ,
,
3h. , 9h ,
.
.
[ 1 ,2 ] .
ZrO2 ,

3

,
. TiO2 ,
3. 1

[ 3 ,4 ] ,
, 31111 XRD
. Si ( 111 ) TiO2
, XRD , 1 . TiO2
, ( ) ,
. TiO2 [ 1 ,6 ] , [ 7 ] . [ 7 ]
3001000 . [5 ]
,
( 600 ) .
2 TiO2 300 TiO2 ( 1
A) , A ( 101)
A ( 004)
A ( 105) .
Si ( 111 ) Al2 O3 500 , ,

,1972 , , . Email :dzq2001 @eyou. com dai2zhenqing @163. com


,1939 , , .
2004202211 ,2004206209 2005
2 : TiO2 325

, A ( 004 ) KBr , 447cm - 1 TiO2


, . 700 , , [ 9 ] [ TiO6 ] 8 -
( 1 R) R ( 110 ) , 530cm - 1 ,
. 900 , 4000 400cm - 1 , TiO2 400
, R ( 310 ) , 340cm - 1 .
TiO2 . 1100 , ,
, R , 530cm - 1
(110) , R ( 200 ) R ( 210 ) R [ 10 ] . TiO2 .
( 220) , [ 6 ] ,
900
,
,
. XRD Si
( 111) .

2 KBr ( a) KBr TiO2 ( b)



Fig. 2 Absorbing spectrum of pure KBr ( curve a) com2
pared wit h t he absorbing spectrum of t he admixture of
KBr and TiO2 (curve b)

3. 2

1 TiO 2 XRD ,
Fig. 1 XRD spectra of TiO2 t hin films 1100 Al2 O3
.
31112
KBr , 150nm , 2cm 112cm ,
, KBr TiO2 , , . TiO2
KBr , 2 ,
. [ 8 ] , TiO2 640 , 327cm3 / min ,
530 , 400 340cm - 1
, . ,
- 1 [9 ]
640cm . 2 1401 419cm - 1 , 1 .
1 TiO 2 M
Table 1 Variation of t he resistance of TiO2 t hin films wit h t he oxygen partial pressure M
pO / ( pO + p N ) 0 0. 114 0. 204 0. 280 0. 340 0. 384 0. 423 0. 451 0. 474
2 2 2
400 R 44 54. 5 63 71 77 82 85 86 87
500 R 16 21 23 24 25 25. 5 26. 5 27 27
600 R 13 14 14 15 15 15. 5 15. 5 16 16

31211
, R - R0
S = ( 1)
S , [ 1113 ] R0
326 26

R 0 N 2 ; R 4 E = 0141eV .
O2 .
31212

3 400 ,500 ,600
. ,
p O2 / ( p O2 + p N2 ) , . 400

; ,
p O2 / ( p O2 + p N2 ) , p O2 / ( p O2 +
p N2) 0145 ; p O2 / ( p O2 + p N2 )

, p O2 / ( p O2 + p N2 ) , 4 ln R21/ T
Fig. 4 Grap h of ln R21/ T
; 400
,600 . 300 R 0 , R , ( 2)
, S .
600 p O2 / ( p O2 + p N2 ) 01474
,400 ,
( 16M) , p O2 / ( p O2 + p N2 ) 01340 ,
[ 2 ] .
5min , , 16.
p O2 / ( p O2 + p N2 ) , 500 ,

5min 30M , 1
500 25M ;
, 400 , 5min
270M , 1 77M .
, p O2 / ( p O2 + p N2 ) 0 , 30min ,
265M , 1
44M , 5 ( d ) . 5 ( a ) , ( b ) , ( c )
3 TiO 2 S p O2 / ( p O2 + p N2 ) 400 ,500 ,600 p O2 / ( p O2
Fig. 3 Relation between sensitivity of TiO2 t hin films + p N2 ) .
and pO2 / ( pO2 + pN2 )

31213
( 1)

,
. , .
[ 2 ]
R = Ce E/
kT

E. 5 TiO 2 p O2 / ( p O2 +

C ; E , p N )
2

; k ; R . Fig. 5 Relation between t he resistance of TiO2 t hin films


p O2 / ( p O2 + p N2 ) 01514 , 400 , and pO2 / ( pO2 + pN2 ) at various temperatures
500 ,600 R , ln R21/ T
, 4 .
2 : TiO2 327

, R2p O2 / ( p O2 + p N2 ) Journal of Semiconductors ,1999 ,20 (11) :1022 (in Chinese) [


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328 26

Preparation of TiO2 Thin Films and Their Oxygen2Sensing Properties

Dai Zhenqing1 ,2 , Sun Yicai1 , Pan Guofeng1 , Meng Fanbin1 , and Li Guoyu1
( 1 I nstit ute of Microelect ronics , Hebei U niversity of Technology , Tianji n 300130 , Chi na)
( 2 Depart ment of M at hm atics and Physics , Hebei Norm al U niversity of Science & Technology , Qi nhuangdao 066600 , Chi na)

Abstract : TiO2 t hin films were deposited by DC magnetron sputtering. Annealing was carried out from 300 to 1100 ,and t he law of
crystal p hase transition wit h t he annealing temperature was studied. Oxygen2sensing properties of TiO2 t hin films were measured ,and
t he experiment results show t hat sensitivity increasing wit h t he partial pressure of O2 is fastest and t he sensitivity is highest at 400 .
Activation energy was determined to be equal to 0141eV ,and t he oxygen2sensing reversibility of TiO2 t hin films was also discussed.

Key words : DC magnetron sputtering ; t hin films of titanium oxide ; oxygen2sensing properties ; activation energy
PACC : 0670 ; 7360 ; 8140
Article ID : 025324177 ( 2005) 0220324205

Dai Zhenqing male , was born in 1972 , graduate student . He is engaging in t he research on preparation of t hin films and gas sensors. Email :
dzq2001 @eyou. com ;dai2zhenqing @163. com
Sun Yicai male ,was born in 1939 ,professor. He is engaging in t he research on electron measurement and sensors.
Received 11 February 2004 ,revised manuscript received 9 J une 2004 2005 Chinese Institute of Electronics