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Ordering number:5796

NPN Triple Diffused Planar Silicon Transistor

2SD2580
Color TV Horizontal Deflection
Output Applications

Features Package Dimensions


High speed. unit:mm
High breakdown voltage (VCBO=1500V). 2039D
High reliability (Adoption of HVP process).
[2SD2580]
Adoption of MBIT process.
16.0 5.6
On-chip damper diode. 3.4
3.1

5.0
8.0
22.0
21.0

2.0
2.8

4.0
2.0 2.0
1.0

20.4
0.6

1 2 3
1:Base

3.5
2:Collector
3:Emitter
5.45 5.45

SANYO:TO3PML

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 10 A
Collector Current (pulse) ICP 30 A
Collector Dissipation PC 3.0 W
Tc=25C 70 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C

Electrical Characteristics at Ta = 25C


Ratings
Parameter Symbol Conditons Unit
min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0 10 A
Collector Cutoff Current ICES VCE=1500V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0 40 130 mA
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3098TS (KOTO) TA-1137 No.5796-1/4
www.DataSheet4U.com
2SD2580

Continued from preceiding page.

Ratings
Parameter Symbol Conditons Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=8A, IB=1.6A 5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=8A, IB=1.6A 1.5 V
DC Current Gain hFE1 VCE=5V, IC=1A 15 30
hFE2 VCE=5V, IC=8A 5 8
Fall Time tf IC=6A, IB1=1.2A, IB2=2.4A 0.3 s

Switching Time Test Circuit

PW=20s IB1
DC1% IB2 OUTPUT
INPUT
RB
RL=33.3
VR
50 + +

100F 470F

VBE=2V VCC=200V

I C - VCE 11
I C - VBE
10
1.4A 1.6A 1.8A 2.0A VCE =5V
9 10
1.2A 9
8
Collector Current, IC A

Collector Current, IC A

1.0A
8
7 0.8A
0.6A 7
6
0.4A 6
5
5
C

4
20

0.2A
25C
C

4
- 40
1
Ta =

3 3
2 2

1 1
IB=0
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE V Base-to-Emitter Voltage, VBE V

5
hFE - I C VCE(sat) - I C
7
VCE =5V I / I =5
5 C B
3
C
Saturation Voltage, VCE (sat) V

120 3
2 Ta = 2
DC Current Gain, hFE

C
25
C 1.0
10 - 40
7
CollectortoEmitter

7
5
5
3
3 2
25C Ta= -40C
2
0.1
7 120C
1.0 5
7 3
7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC A Collector Current, IC A

No.5796-2/4
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2SD2580

SW Time - I C SW Time - I B2
7 10
VCC = 200V
5 7 IC =6A
t stg 5 IB1 = 1.2A
Switching Time, SW Time s

Switching Time, SW Time s


3 t st R load
g
3
2
2

1.0
1.0
7
7
5
tf 5 tf
3
3
2 VCC = 200V 2
IC / IB1 = 5
0.1 IB2 / IB1 = 2 0.1
R load
7 7
7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC A Base Current, IB2 A

5 Forward Bias A S O Reverse Bias A S O


5
I
3 CP
3
PT

2
=1

IC 2
00

10
30
Collector Current, IC A

Collector Current, IC A
s

PC
0

7 =7 10
s

5 0W
7
3
1m
10

2 5
s
ms

3
1.0
7 2
5
3 1.0
D

2 7
C
op

5
er

0.1 L = 500H
at

7 3 I = -3A
io

B2
n

5 2 Tc = 25C
Tc = 25C
3 1 pulse
1 pulse
2 0.1
3 5 7 10 2 3 5 7 100 2 3 5 7 1000 5 7 100 2 3 5 7 1000 2 3 5
Collector-to-Emitter Voltage, VCE V Collector-to-Emitter Voltage, VCE V

P C - Ta P C - Tc
4 80

70
Collector Dissipation, PC W

Collector Dissipation, PC W

3 60

No
2 he 40
at
sin
k

1 20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta C Case Temperature, Tc C

No.5796-3/4
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2SD2580

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of October, 1998. Specifications and information herein are subject
to change without notice.
PS No.5796-4/4