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BUK9508-55B

N-channel TrenchMOS logic level FET


Rev. 03 15 June 2010 Product data sheet

1. Product profile

1.1 General description


Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits


Low conduction losses due to low Suitable for logic level gate drive
on-state resistance sources
Q101 compliant Suitable for thermally demanding
environments due to 175 C rating

1.3 Applications
12 V and 24 V loads General purpose power switching
Automotive systems Motors, lamps and solenoids

1.4 Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source Tj 25 C; Tj 175 C - - 55 V
voltage
ID drain current VGS = 5 V; Tmb = 25 C; [1] - - 75 A
see Figure 1; see Figure 3
Ptot total power Tmb = 25 C; see Figure 2 - - 203 W
dissipation
Static characteristics
RDSon drain-source VGS = 10 V; ID = 25 A; - 6.2 7 m
on-state Tj = 25 C
resistance VGS = 5 V; ID = 25 A; - 7.1 8.4 m
Tj = 25 C;
see Figure 11; see Figure 12
NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

Table 1. Quick reference data continued


Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup 55 V; - - 352 mJ
drain-source RGS = 50 ; VGS = 5 V;
avalanche energy Tj(init) = 25 C; unclamped
Dynamic characteristics
QGD gate-drain charge VGS = 5 V; ID = 25 A; - 16 - nC
VDS = 44 V; Tj = 25 C;
see Figure 13

[1] Continuous current is limited by package.

2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to
drain mbb076 S

1 2 3

SOT78 (TO-220AB)

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK9508-55B TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 2 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25 C; Tj 175 C - - 55 V
VDGR drain-gate voltage RGS = 20 k - - 55 V
VGS gate-source voltage -15 - 15 V
ID drain current Tmb = 100 C; VGS = 5 V; see Figure 1 [1] - - 75 A
Tmb = 25 C; VGS = 5 V; see Figure 1; [2] - - 110 A
see Figure 3 [1] - - 75 A
IDM peak drain current Tmb = 25 C; tp 10 s; pulsed; - - 439 A
see Figure 3
Ptot total power dissipation Tmb = 25 C; see Figure 2 - - 203 W
Tstg storage temperature -55 - 175 C
Tj junction temperature -55 - 175 C
Source-drain diode
IS source current Tmb = 25 C [2] - - 110 A
[1] - - 75 A
ISM peak source current tp 10 s; pulsed; Tmb = 25 C - - 439 A
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup 55 V; RGS = 50 ; - - 352 mJ
drain-source VGS = 5 V; Tj(init) = 25 C; unclamped
avalanche energy

[1] Continuous current is limited by package.


[2] Current is limited by power dissipation chip rating.

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 3 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

03nn57 03na19
120 120
Capped at 75 A due to package
ID Pder
(A) (%)

80 80

40 40

0 0
0 50 100 150 200 0 50 100 150 200
Tmb (C) Tmb (C)

Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a
mounting base temperature function of mounting base temperature

03nn55
103

Limit RDSon = VDS/ID


ID
(A)
tp = 10 s
102

100 s

Capped at 75 A due to package 1 ms


DC
10
10 ms

100 ms

1
1 10 102
VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 4 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance see Figure 4 - - 0.74 K/W
from junction to
mounting base
Rth(j-a) thermal resistance vertical in still air - 60 - K/W
from junction to
ambient

03nn56
1

= 0.5
Zth(j-mb)
(K/W)
0.2

101 0.1
0.05
0.02

tp
102 P =
T
single shot

tp t
T
103
106 105 104 103 102 101 1
tp (s)

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration

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Product data sheet Rev. 03 15 June 2010 5 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 0.25 mA; VGS = 0 V; Tj = 25 C 55 - - V
breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 C 50 - - V
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 C; 1.1 1.5 2 V
voltage see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 C; - - 2.3 V
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 C; 0.5 - - V
see Figure 10
IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 C - - 500 A
VDS = 55 V; VGS = 0 V; Tj = 25 C - 0.02 1 A
IGSS gate leakage current VDS = 0 V; VGS = 15 V; Tj = 25 C - 2 100 nA
VDS = 0 V; VGS = -15 V; Tj = 25 C - 2 100 nA
RDSon drain-source on-state VGS = 4.5 V; ID = 25 A; Tj = 25 C - - 9.3 m
resistance VGS = 5 V; ID = 25 A; Tj = 175 C; - - 16.8 m
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 C - 6.2 7 m
VGS = 5 V; ID = 25 A; Tj = 25 C; - 7.1 8.4 m
see Figure 11; see Figure 12
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 44 V; VGS = 5 V; - 45 - nC
QGS gate-source charge Tj = 25 C; see Figure 13 - 9 - nC
QGD gate-drain charge - 16 - nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 3960 5280 pF
Coss output capacitance Tj = 25 C; see Figure 14 - 517 620 pF
Crss reverse transfer - 206 282 pF
capacitance
td(on) turn-on delay time VDS = 30 V; RL = 1.2 ; VGS = 5 V; - 29 - ns
tr rise time RG(ext) = 10 ; Tj = 25 C - 123 - ns
td(off) turn-off delay time - 131 - ns
tf fall time - 86 - ns
LD internal drain from drain lead 6 mm from package to - 4.5 - nH
inductance center of die ; Tj = 25 C
from contact screw on mounting base to - 3.5 - nH
center of die ; Tj = 25 C
LS internal source from source lead to source bond pad ; - 7.5 - nH
inductance Tj = 25 C

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 6 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

Table 6. Characteristics continued


Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 C; - 0.85 1.2 V
see Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = -100 A/s; - 69 - ns
Qr recovered charge VGS = -10 V; VDS = 30 V; Tj = 25 C - 72 - nC

03nn52 03nn51
300 25
5 4.8 Label is VGS (V) RDSon
ID (m)
(A) 4.6
20
10
4.4
200
4.2
15

4
3.8 10
100 3.6
3.4
3.2 5
3
2.8
2.6
0 0
0 2 4 6 8 10 0 5 10 15
VDS (V) VGS (V)

Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values

03ng53 03nn49
101 120
ID
(A) gfs
102 (S)

min typ max 80


103

104
40

105

106 0
0 1 2 3 0 25 50 75 100
VGS (V) ID (A)

Fig 7. Sub-threshold drain current as a function of Fig 8. Forward transconductance as a function of


gate-source voltage drain current; typical values

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 7 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

03nn50 03ng52
100 2.5

ID VGS(th)
(A) (V)
2.0
75 max

1.5
typ
50

1.0 min

25
Tj = 175 C Tj = 25 C 0.5

0 0
0 1 2 3 4 60 0 60 120 180
VGS (V) Tj (C)

Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values junction temperature

03nn53 03ne89
30 2
Label is VGS (V)
RDSon a
(m)
3 3.2 1.5
20
3.4
3.6
3.8
4 1

5
10

10 0.5

0 0
0 50 100 150 200 250 -60 0 60 120 180
ID (A) Tj (C)

Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values factor as a function of junction temperature

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 8 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

03nn48 6000 03nn54


5
VGS Ciss
(V) C
(pF)
4

VDD = 14 V VDD = 44 V 4000


3 Coss

2
2000
Crss

0 0
0 10 20 30 40 50 102 101 1 10 102
Q G (nC) VDS (V)

Fig 13. Gate-source voltage as a function of gate Fig 14. Input, output and reverse transfer capacitances
charge; typical values as a function of drain-source voltage; typical
values

03nn47
100

IS
(A)

75

50

25
Tj = 175 C Tj = 25 C

0
0.0 0.5 1.0 1.5
VSD (V)

Fig 15. Source current as a function of source-drain voltage; typical values

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 9 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

E A
p A1

q mounting
D1 base

L1(1) L2(1)

Q
b1(2)
L (3)

b2(2)
(2)
1 2 3

b(3) c

e e

0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
L2(1)
UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) p q Q
max.
4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6
mm 2.54 3.0
4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2

Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.

OUTLINE REFERENCES EUROPEAN


ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
08-04-23
SOT78 3-lead TO-220AB SC-46
08-06-13

Fig 16. Package outline SOT78 (TO-220AB)

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 10 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK9508-55B v.3 20100615 Product data sheet - BUK95_96_9E08 v.2
Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9508-55B separated from data sheet BUK95_96_9E08 v.2.
BUK95_96_9E08 v.2 20030313 Product data - -
(9397 750 12052)

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 11 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions Suitability for use in automotive applications This NXP


Semiconductors product has been qualified for use in automotive
Draft The document is a draft version only. The content is still under applications. The product is not designed, authorized or warranted to be
internal review and subject to formal approval, which may result in suitable for use in medical, military, aircraft, space or life support equipment,
modifications or additions. NXP Semiconductors does not give any nor in applications where failure or malfunction of an NXP Semiconductors
representations or warranties as to the accuracy or completeness of product can reasonably be expected to result in personal injury, death or
information included herein and shall have no liability for the consequences of severe property or environmental damage. NXP Semiconductors accepts no
use of such information. liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
Short data sheet A short data sheet is an extract from a full data sheet customers own risk.
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and Applications Applications that are described herein for any of these
full information. For detailed and full information see the relevant full data products are for illustrative purposes only. NXP Semiconductors makes no
sheet, which is available on request via the local NXP Semiconductors sales representation or warranty that such applications will be suitable for the
office. In case of any inconsistency or conflict with the short data sheet, the specified use without further testing or modification.
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
Product specification The information and data provided in a Product damage, costs or problem which is based on a weakness or default in the
data sheet shall define the specification of the product as agreed between customer application/use or the application/use of customers third party
NXP Semiconductors and its customer, unless NXP Semiconductors and customer(s) (hereinafter both referred to as Application). It is customers
customer have explicitly agreed otherwise in writing. In no event however, sole responsibility to check whether the NXP Semiconductors product is
shall an agreement be valid in which the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary
deemed to offer functions and qualities beyond those described in the testing for the Application in order to avoid a default of the Application and the
Product data sheet. product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data The Quick reference data is an extract of the


9.3 Disclaimers product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limited warranty and liability Information in this document is believed to Limiting values Stress above one or more limiting values (as defined in the
be accurate and reliable. However, NXP Semiconductors does not give any Absolute Maximum Ratings System of IEC 60134) will cause permanent
representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper)
completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in
consequences of use of such information. the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
In no event shall NXP Semiconductors be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect
punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device.
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale NXP Semiconductors
damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial
contract or any other legal theory. sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
Notwithstanding any damages that customer might incur for any reason agreement is concluded only the terms and conditions of the respective
whatsoever, NXP Semiconductors aggregate and cumulative liability towards agreement shall apply. NXP Semiconductors hereby expressly objects to
customer for the products described herein shall be limited in accordance applying the customers general terms and conditions with regard to the
with the Terms and conditions of commercial sale of NXP Semiconductors. purchase of NXP Semiconductors products by customer.

Right to make changes NXP Semiconductors reserves the right to make No offer to sell or license Nothing in this document may be interpreted or
changes to information published in this document, including without construed as an offer to sell products that is open for acceptance or the grant,
limitation specifications and product descriptions, at any time and without conveyance or implication of any license under any copyrights, patents or
notice. This document supersedes and replaces all information supplied prior other industrial or intellectual property rights.
to the publication hereof.

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 12 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

Export control This document as well as the item(s) described herein may Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
be subject to export control regulations. Export might require a prior FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
authorization from national authorities. ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
9.4 Trademarks
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Notice: All referenced brands, product names, service names and trademarks Corporation.
are the property of their respective owners.

10. Contact information


For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BUK9508-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 03 15 June 2010 13 of 14


NXP Semiconductors BUK9508-55B
N-channel TrenchMOS logic level FET

11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section Legal information.

NXP B.V. 2010. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 June 2010
Document identifier: BUK9508-55B