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# HW#3 Physics of Semiconductor Materials and Devices November 21, 2017

## (Due Nov. 29, 2017 (Wednesday) In class.)

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1. Consider an ideal Si pn junction diode, what must be the ratio of Nd/Na so that 90% of the
current in the depletion region is due to the flow of electrons? [textbook Prob. 8.11]

## 2. Consider an ideal Si pn junction diode with the geometry shown in

right figure. The doping concentrations are Na= 51016 cm-3 and
Nd=1.51016 cm-3, and he minority carrier lifetimes are no=210-7
s and po=810-8 s. The minority carrier diffusion coefficients are
Dn=25 cm2/s and Dp=10 cm2/s. The cross-sectional area is
A=510-4 cm2. Calculate (a) the ideal reverse-saturation current
due to holes, (b) the ideal reverse-saturation current due to
electrons, (c) the hole concentration at x=xn for Va=0.8 Vbi, (d) the
electron current at x=xn for Va=0.8 Vbi, and (e) the electron current
at x=xn +(1/2)Lp for Va=0.8 Vbi. [textbook Prob. 8.16]

## 3. Consider a Si pn junction diode with an applied reverse-biased voltage of VR=5 V. The

doping concentrations are Na=Nd= 41016 cm-3 and the cross-sectional area is A=10-4 cm2.
Assume minority carrier lifetimes of no= po=10-7 s. The minority carrier diffusion
coefficients are Dn=25 cm2/s and Dp=10 cm2/s. Calculate (a) the ideal reverse-saturation
current, (b) reverse-biased generation current, and (c) the ratio of the generation current to
ideal saturation current. [textbook Prob. 8.28]

## 4. Consider, as shown in Figure 8.35, a uniformly doped Si

pn junction at T=300 K with doping concentrations are
Na=Nd=51015 cm-3 and minority carrier lifetimes of no=
po=o=10-7 s. A reverse-biased voltage of VR=10 V is
applied. A light source is incident only on the space
charge region, producing excess carrier generation rate of
g= 41019 cm-3 s-1. Calculating the generation current
density. [textbook Prob. 8.35]

## 5. A Schottky diode at T=300 K is formed with Pt on n-type Si with a doping concentration

of Nd=51015 cm-3. The barrier height is found to be Bn=0.89 V. Determine (a) n, (b) Vbi,
(c) JsT, and (d) Va such that Jn= 5 A/cm2. (Neglect the barrier lowering) [textbook Prob.
9.14]