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DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, 2 columns

M3D118

BYW95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification 1996 Jun 07
Supersedes data of December 1979
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

construction. This package is

,
FEATURES DESCRIPTION
hermetically sealed and fatigue free
• Glass passivated Rugged glass SOD64 package,
as coefficients of expansion of all
• High maximum operating using a high temperature alloyed
used parts are matched.
temperature
• Low leakage current
• Excellent stability 2/3 page k(Datasheet) a
• Guaranteed avalanche energy
absorption capability MAM104

• Available in ammo-pack
• Also available with preformed leads Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V
VR continuous reverse voltage
BYW95A − 200 V
BYW95B − 400 V
BYW95C − 600 V
IF(AV) average forward current Ttp = 60 °C; lead length = 10 mm − 3.00 A
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
Tamb = 65 °C; PCB mounting (see − 1.25 A
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
IFRM repetitive peak forward current Ttp = 60 °C; see Fig.4 − 30 A
Tamb = 65 °C; see Fig.5 − 13 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 70 A
Tj = Tj max prior to surge;
VR = VRRMmax
ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to − 10 mJ
avalanche energy surge; inductive load switched off
Tstg storage temperature −65 +175 °C
Tj junction temperature see Fig.7 −65 +175 °C

1996 Jun 07 2
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


VF forward voltage IF = 5 A; Tj = Tj max; see Fig.8 − − 1.25 V
IF = 5 A; see Fig.8 − − 1.50 V
V(BR)R reverse avalanche IR = 0.1 mA
breakdown voltage
BYW95A 300 − − V
BYW95B 500 − − V
BYW95C 700 − − V
IR reverse current VR = VRRMmax; − − 1 µA
see Fig.9
VR = VRRMmax; Tj = 165 °C; − − 150 µA
see Fig.9
trr reverse recovery time when switched from IF = 0.5 A − − 250 ns
to IR = 1 A; measured at
IR = 0.25 A; see Fig.12
Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 − 85 − pF
dI R maximum slope of when switched from IF = 1 A to − − 7 A/µs
--------
dt reverse recovery current VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.13

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT


Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
Rth j-a thermal resistance from junction to ambient note 1 75 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.

1996 Jun 07 3
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

GRAPHICAL DATA

MGC609 MGC608
4 2.0
handbook, halfpage handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
1.6
3

1.2

0.8

1
0.4

0 0
0 100 o 200 0 100 o 200
Ttp ( C) Tamb ( C)

a = 1.42; VR = VRRMmax; δ = 0.5.


a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11.
Switched mode application. Switched mode application.

Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward
current as a function of tie-point temperature current as a function of ambient temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).

MGC606
40
handbook, full pagewidth
I FRM
(A)

δ=
30 0.05

20 0.1

0.2

10
0.5
1.0

0
10 –2 10 –1 1 10 10 2 10 3 10 4
tp (ms)

Ttp = 60 °C; Rth j-tp = 25 K/W.


VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.

Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 Jun 07 4
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

MGC607
16
handbook, full pagewidth
I FRM
(A)
δ=
0.05

12

0.1
8

0.2

4
0.5

1.0

0
10 –2 10 –1 1 10 10 2 10 3 10 4
tp (ms)

Tamb = 65 °C; Rth j-a = 75 K/W.


VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.

Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MGC611 MGC575
5 200
handbook, halfpage a=3 2.5 2 1.57 handbook, halfpage
P
(W) 1.42
4
Tj
o
( C)

100

A B C
1

0 0
0 2 4 0 200 400 600 800
IF(AV) (A) VR (V)

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.


Solid line = VR.
Fig.6 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5.
(forward plus leakage current losses,
excluding switching losses) as a function Fig.7 Maximum permissible junction temperature
of average forward current. as a function of reverse voltage.

1996 Jun 07 5
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

MGC610 MGC574
10 3
10halfpage
handbook, halfpage handbook,
IF
IR
(A)
(µA)
8
2
10

10

1
2

0 10 1
0 1 2 0 100 o 200
VF (V) Tj ( C)

Dotted line: Tj = 175 °C.


Solid line: Tj = 25 °C. VR = VRRMmax.

Fig.8 Forward current as a function of forward Fig.9 Reverse current as a function of junction
voltage; maximum values. temperature; maximum values.

MGC605
10 2
handbook, halfpage 50
handbook, halfpage
25
Cd
(pF)

7
50
10

3
1
1 10 102 103 MGA200
VR (V)

f = 1 MHz; Tj = 25 °C.

Dimensions in mm.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values. Fig.11 Device mounted on a printed-circuit board.

1996 Jun 07 6
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

handbook, full pagewidth DUT IF


(A)
+ 0.5
t rr
10 Ω 25 V

1Ω
50 Ω 0
t
0.25

0.5
IR
(A)
MAM057
1

Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.


Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.12 Test circuit and reverse recovery time waveform and definition.

IF halfpage
andbook,

dI F
dt

t rr

10% t
dI R
dt
100%
IR
MGC499

Fig.13 Reverse recovery definitions.

1996 Jun 07 7
Philips Semiconductors Product specification

Fast soft-recovery
BYW95 series
controlled avalanche rectifiers

,
PACKAGE OUTLINE

handbook, full pagewidth k a


1.35
max

4.5 MBC049
max 28 min 5.0 max 28 min

Dimensions in mm.
The marking band indicates the cathode.

Fig.14 SOD64.

DEFINITIONS

Data Sheet Status


Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jun 07 8