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Problem 1:
A Si step junction under equilibrium at 300 K has a p-side doping of NA = 2 × 1015 cm-3 and
n-side doping of ND = 1015 cm-3.Calculate:
(a) The contact potential (also called built-in voltage).
(b) The depletion layer width at the p-side and n-sides, and the total depletion layer width.
(c) The electric field at the metallurgical junction.
(d) The potential at the metallurgical junction.
(e) Make sketches of the charge density, electric field and electrostatic potential as a
function of position, that are roughly to scale.
Problem 2:
Shown below is the electric field profile in the depletion region of a semiconductor p-n
junction in thermal equilibrium. Answer the following questions with explanations.
(a) Which side is p-type and which side is n-type? Write down Poisson’s equation and
obtain the answers from this equation.
(b) Is the n-type region uniformly doped within the depletion layer? Is the p-type region
uniformly doped? Explain.
(c) Which side is more heavily doped?
(d) If the p-type region has a net doping concentration of 1015 cm-3, what will be the doping
concentration in the n-type region?
Problem 3:
An abrupt silicon p-n junction diode has the following characteristics.
p-side n-side
NA =1016 cm-3 ND = 4 ×1016 cm-3
𝜇𝑛 = 1000 𝑐𝑚2 ⁄𝑉 ∙ 𝑠 𝜇𝑝 = 350 𝑐𝑚2 ⁄𝑉 ∙ 𝑠
𝜏𝑛 = 𝜏𝑝 = 10−7 sec 𝜏𝑛 = 𝜏𝑝 = 10−7 sec
Area A = 10-2cm2