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FMH23N50E FUJI POWER MOSFET

Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET

Features Outline Drawings [mm] Equivalent circuit schematic


Maintains both low power loss and low noise TO-3P(Q)
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications Gate(G)
Switching regulators Source(S)
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics


Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 500 V
Drain-Source Voltage
VDSX 500 V VGS = -30V
Continuous Drain Current ID ±23 A
Pulsed Drain Current I DP ±92 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current I AR 23 A Note*1
Non-Repetitive Maximum Avalanche Energy E AS 767.3 mJ Note*2
Repetitive Maximum Avalanche Energy E AR 31.5 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 9.3 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
2.50 Ta=25°C
Maximum Power Dissipation PD W
315 Tc=25°C
Operating and Storage Tch 150 °C
Temperature range Tstg -55 to + 150 °C

Electrical Characteristics at Tc=25°C (unless otherwise specified)


Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS I D =250µA, VGS =0V 500 - - V
Gate Threshold Voltage VGS (th) I D =250µA, VDS =VGS 2.5 3.0 3.5 V
VDS =500V, VGS =0V Tch =25°C - - 25
Zero Gate Voltage Drain Current I DSS µA
VDS =400V, VGS =0V Tch =125°C - - 250
Gate-Source Leakage Current I GSS VGS =±30V, VDS =0V - 10 100 nA
Drain-Source On-State Resistance R DS (on) I D =11.5A, VGS =10V - 0.21 0.245 Ω
Forward Transconductance gfs I D =11.5A, VDS =25V 14 28 - S
Input Capacitance Ciss VDS =25V - 3500 5250
Output Capacitance Coss VGS =0V - 330 495 pF
Reverse Transfer Capacitance Crss f=1MHz - 24 36
td(on) Vcc =300V - 24 36
Turn-On Time
tr VGS =10V - 13 19.5
ns
td(off) I D =11.5A - 150 225
Turn-Off Time
tf RGS =5.6Ω - 20 30
Q th - 11 16.5
Vcc =250V
Total Gate Charge QG - 93 139.5
I D =23A nC
Gate-Source Charge Q GS - 24 36
VGS =10V
Gate-Drain Charge Q GD - 30 45
Avalanche Capability I AV L=1.16mH, Tch =25°C 23 - - A
Diode Forward On-Voltage VSD I F =23A, VGS =0V, Tch =25°C - 0.90 1.35 V
Reverse Recovery Time trr I F =23A, VGS =0V - 0.5 - µs
Reverse Recovery Charge Qrr -di/dt=100A/µs, Tch=25°C - 8 - µC

Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Rth (ch-c) Channel to case 0.40 °C/W
Thermal resistance
Rth (ch-a) Channel to ambient 50.0 °C/W
Note *1 : Tch≤150°C Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω See to the 'Transient Themal impeadance' graph.
E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph. Note *5 : I F ≤-I D, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.

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FMH23N50E FUJI POWER MOSFET

Allowable Power Dissipation Safe Operating Area


ID=f(VDS):Duty=0(Single pulse),Tc=25°C
PD=f(Tc)
350

10
2 t=
300 1µs

10µs
250 10
1
100µs

200
0 1ms
10
PD [W]

ID [A]
150
-1
10
100 Power loss waveform : D.C.
Square waveform

-2
10 PD
50
t

-3
0 10
0 25 50 75 100 125 150 10
0
10
1 2
10 10
3

VDS [V]
Tc [° C]

Typical Output Characteristics Typical Transfer Characteristic


ID=f(VDS):80 µs pulse test,Tch=25 °C ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
70 100

60
10V

50 6.0V 10
5.5V

40
ID[A]
ID [A]

30 5.0V
1

20

VGS=4.5V
10
0.1

0
0 4 8 12 16 20 24 0 1 2 3 4 5 6 7 8 9 10
VDS [V] VGS[V]

Typical Transconductance Typical Drain-Source on-state Resistance


gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
100 0.9

0.8 VGS=4.5V
5.0V
0.7

0.6
10
RDS(on) [ Ω ]

0.5
5.5V 6.0V
gfs [S]

0.4 10V

0.3
1
0.2

0.1

0.0

0.1
0.1 1 10 100 0 10 20 30 40 50 60
ID [A] ID [A]

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FMH23N50E FUJI POWER MOSFET

Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch


RDS(on)=f(Tch):ID=11.5A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µA
1.0 6.0

5.5

5.0
0.8
4.5

4.0

VGS(th) [V]
0.6
3.5
RDS(on) [ Ω ]

max.
3.0
typ.

0.4 2.5
max.
2.0 min.
typ. 1.5
0.2
1.0

0.5

0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]

Typical Gate Charge Characteristics Typical Capacitance


VGS=f(Qg):ID=23A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
14 10
4

Ciss
12 Vcc= 100V
250V
400V 3
10
10

8
C [pF]
VGS [V]

2 Coss
10
6

4
1
10 Crss

0 10
0

0 20 40 60 80 100 120 140 -1


10 10
0
10
1
10
2
10
3

Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID


IF=f(VSD):80 µs pulse test,Tch=25 °C t=f(ID):Vcc=300V,VGS=10V,RG=5.6 Ω
3
100 10

td(off)

2 tf
10 10
IF [A]

t [ns]

td(on)

1
1 10 tr

0
0.1 10
-1 0 1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 10 10
VSD [V] ID [A]

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FMH23N50E FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch Maximum Transient Thermal Impedance
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=23A Zth(ch-c)=f(t):D=0
1
10
800 IAS=23A

700 0
10

Zth(ch-c) [°C/W]
600
IAS=14A
-1
10
500
EAV [mJ]

400
IAS=10A 10
-2

300

200 10-3
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
100 t [sec]

0
0 25 50 75 100 125 150
starting Tch [°C]

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FMH23N50E FUJI POWER MOSFET

WARNING

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