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MCQs
by staff10
4-5 minutes

## This set of Electronic Devices and Circuits Mcqs focuses on

“The AC Analysis of a Small-Signal Low-Frequency
Common Emitter Transistor”.

## 1. The feature of an approximate model of a transistor is

a) it helps in quicker analysis
b) it provides individual analysis for different configurations
c) it helps in dc analysis
d) ac analysis is not possible

Explanation: The small signal model helps in quicker ac
analysis of a transistor. The approximate model is
applicable for all the configurations. The dc analysis is not
obtained by using a small signal model of transistor.

## 2 A transistor has hfe=100, hie=2kΩ, hoe=0.005mmhos,

hre=0. Find the output impedance if the lad resistance is
5kΩ.
a) 5kΩ

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b) 4kΩ
c) 20kΩ
d) 15kΩ

Explanation: RO=I/hoe=1/0.005m
=20kΩ.ROI= RO || RLI=20||5
=4kΩ.

## 3. A CE amplifier when bypassed with a capacitor at the

emitter resistance has
a) increased input resistance and increased voltage gain
b) increased input resistance and decreased voltage gain
c) decreased input resistance and increased voltage gain
d) decreased input resistance and decreased voltage gain

Explanation: When a transistor is bypassed with a
capacitor, it short circuits in the small signal analysis of
transistor and the resistor too shorts. The input resistance
becomes RI=hie. The value of the input resistance is
decreased and the gain now will be increasing.

## 4. A transistor has hie =2kΩ, hoe=25µmhos and hfe=60 with

an unbypassed emitter resistor Re=1kΩ. What will be the
input resistance and output resistance?
a) 90kΩ and 50kΩ respectively
b) 33kΩ and 45kΩ respectively
c) 6kΩ and 40kΩ respectively
d) 63kΩ and 40kΩ respectively

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Explanation: As the emitter is unbypassed, the input
resistance Ri=hie+(1+hfe)Re
=2+61=63kΩ. The output resistance RO=1/hoe=1
/25MΩ=40kΩ.

## 5. A transistor has hie =1KΩ and hfe=60 with an bypassed

emitter resistor Re=1kΩ. What will be the input resistance
and output resistance?
a) 90kΩ and 50kΩ respectively
b) 33kΩ and 45kΩ respectively
c) 6kΩ and 40kΩ respectively
d) 63kΩ and 40kΩ respectively

Explanation: As the emitter is bypassed, the input
resistance Ri=hie
=1kΩ. The output resistance RO=1/hoe but the value is not
given.
So, hoe=0 and RO=1/0=∞.

## 6. In the given circuit, find the equivalent resistance

between A and B nodes.

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a) 100kΩ
b) 50kΩ
c) 40kΩ
d) 60kΩ

Explanation: RAB=RO||100Ω
= (RSI+hie/1+hfe)||100
=9+1/100||100=100||100=50Ω.

## 7. Which of the following acts as a buffer?

a) CC amplifier
b) CE amplifier
c) CB amplifier

Explanation: The voltage gain of a common collector
amplifier is unity. It is then used as a buffer. The CC
amplifier is also called as an emitter follower. Though there
is no amplification done, the output will be stabilised.

## 8. Which of the following is true?

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## a) CC amplifier has a large current gain

b) CE amplifier has a large current gain
c) CB amplifier has low voltage gain
d) CC amplifier has low current gain

Explanation: The CE amplifier has high current and voltage
gains. The CC amplifier has unity voltage gain which cannot
be regarded as high. The common base amplifier has a
unity current gain and high voltage gain.

## 9. In an NPN silicon transistor, α=0.995, IE=10mA and

leakage current ICBO=0.5µA. Determine ICEO.
a) 10µA
b) 100µA
c) 90µA
d) 500µA

Explanation: IC=α IE +ICBO
=0.995*10mA+0.5µA=9.9505mA.
IB=IE-IC=10-9.9505=0.0495mA. β=α/(1-α)=0.995
/(1-0.995)=199
ICEO=9.9505-199*0.0495=0.1mA==100µA.

## 10. In CB configuration, the value of α=0.98A. A voltage

drop of 4.9V is obtained across the resistor of 5KΩ when
connected in collector circuit. Find the base current.
a) 0.01mA
b) 0.07mA

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c) 0.02mA
d) 0.05mA

Explanation: Here, IC=4.9/5K=0.98mA
α = IC/IE .So,
IE=IC/α=0.98/0.98=1mA.
IB=IE-IC=1-0.98=0.02mA.

## Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

## To practice MCQs on all areas of Electronic Devices and

Circuits, here is complete set of 1000+ Multiple Choice

6 of 6 3/16/18, 10:04 AM

sanfoundry.com

## Biasing Parameters - Electronic

Devices and Circuits Questions
by staff10
4-5 minutes

## This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “Biasing
Parameters”.

## 1. The current gain of BJT is_________

a) gmro
b) gm/ro
c) gmri
d) gm/ri

Explanation: We know, current gain AV=hfe. In π model, hfe
is referred to β.
We know, ri= β/gm.
From this, β=rigm.

## 2. For the amplifier circuit of fig. The transistor has β of 800.

The mid band voltage gain VO/VI of the circuit will
be_________

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a) 0
b) <1
c) =1
d) 800

Explanation: The circuit is PNP transistor, collector coupled
amplifier. The voltage gain is unity for a CC amplifier.
Hence on observation, the CC amplifier gives a unity gain.

## 3. In a bipolar transistor at room temperature, the emitter

current is doubled the voltage across its base emitter
junction_________
a) doubles
b) halves

Explanation: The change in voltage with temperature can
be found by, V(T) = 2.3m(ΔT)VO . In a bipolar transistor at

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## room temperature if the emitter current is doubled the

voltage across its base emitter junction thereby doubles.

## 4. A common emitter transistor amplifier has a collector

current of 10mA, when its base current is 25µA at the room,
temperature. What is input resistance?
a) 3kΩ
b) 5kΩ
c) 1kΩ
d) 7kΩ

Explanation: We know, β/gm=ri
= (IC/IB)/(IC/VT)=VT/IB=25m/25µ=1k.

## 5. For an NPN transistor connected as shown in below,

VBE=0.7V. Give that reverse saturation current of junction
at room temperature is 10-13A, the emitter current
is_________

a) 30mA
b) 39mA
c) 29mA

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d) 49mA

Explanation: When the collector and base are shorted, the
transistor behaves as a normal diode. So, the diode
equations imply. IE=IO(eV/V0-1). We get, IE=49mA.

## 6. The voltage gain of given circuit below is_________

a) 100
b) 20
c) 10
d) 30

Explanation: The gain for the given circuit can be found by,
AV=RF/RS
=100K/10K=10.

## 7. A small signal source V(t)=Acos20t+Bsin10000t, is

applied to a transistor amplifier as shown. The transistor
has β=150 and hie=3KΩ. What will be the VO?

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a) 1500(Acos20t+Bsin10000t)
b) -150(Acos20t+Bsin10000t)
c) -1500Bsin10000t
d) -150Bsin10000t

Explanation: AV=-hfe RLI/hie=3*150/3=-150. So,
VO=-150V(t)
But cos20t has low frequency so capacitors are open
circuited. Only, the sine component is allowed.
So, Vo =-150Bsin10000t.

## 8. Which of the following statements are correct for basic

transistor configurations?
a) CB Amplifiers has low input impedance and low current
gain
b) CC Amplifiers has low input impedance and high current
gain
c) CE Amplifiers has very poor voltage gain but very high
input impedance

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## d) The current gain of CB Amplifier is higher than the

current gain of CC Amplifiers

Explanation: The CE amplifier has moderate input and
output impedances. The CC amplifier has unity voltage
gain. The common ba se amplifier has a unity current gain
and high voltage gain.

## 9. The collector current is 2.945A and α=0.98. The leakage

current is 2µA. What is the emitter current and base
current?
a) 3mA and 55µA
b) 2.945mA and 55µA
c) 3.64mA and 33µA
d) 5.89mA and 65µA

Explanation: (IC – ICBO)/α=IE
= (2.945-0.002)/0.98=3mA.
IE=IC+IB . So, IB=3-2.495=0.055mA=55µA.

## 10. The change in collector emitter voltage from 6V to 9V

causes increase in collector current from 6mA to 6.3mA.
Determine the dynamic output resistance.
a) 20kΩ
b) 10kΩ
c) 50kΩ
d) 60kΩ

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Explanation: ro=ΔVCE/ΔIC
=3/0.3m=10kΩ.

## 11. A transistor is connected in CB configuration. The

emitter voltage is changed by 200mV, the emitter by 5mA.
During this transition the collector base voltage is kept
constant. What is the input dynamic resistance?
a) 30Ω
b) 60Ω
c) 40Ω
d) 50Ω

Explanation: The ratio of change in emitter base voltage
(ΔVEB) to resulting change in emitter current (ΔIE) at
constant collector base voltage (VCB) is defined as input
resistance. This is denoted by ri.
We know, ΔVEB/ΔIE=ri
=200/5=40Ω.

## Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

## To practice all areas of Electronic Devices and Circuits,

here is complete set of 1000+ Multiple Choice Questions

7 of 7 3/16/18, 10:04 AM

sanfoundry.com

## Electronic Devices and Circuits

Assessment Questions
by staff10
4-5 minutes

## This set of Electronic Devices and Circuits Assessment

Questions and Answers focuses on “Problems on AC and
DC Analysis”.

## 1. In the circuit, transistor has β =60, VBE=0.7V. Find the

collector to emitter voltage drop hoe.

a) 5V
b) 3V
c) 8V
d) 6V

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## Explanation: We know, IC=(VCC-VBE)/RB

By putting the values, we have IC=5.9mA. IE=IC/α. So,
IE=5.99mA.
hoe= VCC-RC(IC+IB). We have hoe=6V.

## 2. For the circuit shown, find the quiescent point.

a) (6V, 1mA)
b) (4V, 10mA)
c) (10V, 3mA)
d) (3mA, 10V)

Explanation: We know, hoe=12V
(IC)SAT =VCC/RL=12/6K=2mA. IB=10V/0.5M=20µA. IC=
βIB=1mA. I
hoe=VCC-ICRL=12-1*6=6V. So, quiescent point is (6V,
1mA).

## 3. For the circuit shown, find the quiescent point.

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a) (10V, 4mA)
b) (4V, 10mA)
c) (10V, 3mA)
d) (3mA, 10V)

Explanation: We know, IE=VEE/RE=10/5kΩ=2mA
IC=α IE =IE =2mA
VCB=VCC-ICRL=20-10=10V. So, quiescent point is (10V,
2mA).

## 4. In the circuit shown below, β =100 and VBE=0.7V. The

Zener diode has a breakdown voltage of 6V. Find the
operating point.

a) (6.7V, 5.3mA)
b) (5.7V, 5.3mA)

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c) (6.7V, 5mA)
d) (6V, 5mA)

Explanation: We know, by KVL -12+(IC+IB)1K+6+VBE=0
We have IE=5.3. IC= αIE=5.24mA. From another loop,
-12+IEIK+VBE=0
We have, hoe=12-5.3m*1000=6.7V. Hence the Q point is
(6.7V, 5.3mA).

## 5. 10. When the β value is large for a given transistor, the IC

and hoe values are given by_________
a) (VCC-VBE)/RB, VCC-RCIC
b) (VCC+VBE)/RB, VCC-RC(IC+IB)
c) (VCC+VBE)/RB, VCC+RC(IC+IB)
d) (VCC+VBE)/RB,VCC+RC(IC-IB)

Explanation: The base current IB is zero when β value is
large. So, the hoe changes to VCC-RCIC. The collector
current IC is changed to (VCC-VBE)/RB from β(VCC-VBE)/(1+
β)RE+ RB.

## 6. For the circuit shown, find the quiescent point.

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a) (10V, 4mA)
b) (4V, 10mA)
c) (10V, 3mA)
d) (3mA, 10V)

Explanation: We know, IE=VEE/RE=30/10kΩ=3mA
IC=α IE =IE =3mA
VCB=VCC-ICRL=25-15=10V. So, quiescent point is (10V,
3mA).

## 7. The PNP transistor when used for switching the power,

then it is called_________
a) sourcing current
b) sinking current
c) forward sourcing
d) reverse sinking

Explanation: Sometimes DC current gain of a bipolar
transistor is too low to directly switch the load current or
voltage, so multiple switching transistors is used. The load
is connected to ground and the transistor switches the
power to it.

## 8. In which of the regions, the small capacitors are open

circuited?
a) high frequency
b) medium frequency
c) low frequency

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## d) the region does not affect he capacitors

Explanation: In low frequency region, the small capacitors
are open circuited and large capacitors are in active state.
In high frequency region, the large capacitors are short
circuited and small capacitors are active.

## 9. In mid frequency region, the large capacitors are short

and small capacitors are open circuited. What happens to
the RC coupled circuit?
a) the circuit is now frequency blind
b) it is DC isolated
c) the circuit turns reactive
d) the circuit is AC dependent

Explanation: In the mid frequency region, the whole circuit
is resistive because the large capacitors are short and small
capacitors are open circuited. The gain is constant in this
region. So, the circuit is frequency blind as the gain is
constant in this region.

## 10. In low frequency region, the gain_________

a) increases
b) decreases
c) remains same
d) depends on value of capacitors

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## Explanation: At very low frequency, the gain decreases due

to the coupling capacitor. When the frequency is
decreased, the reactance of the circuit increases and the
drop across the coupling capacitor increases. The gain is
therefore decreased as the output decreased.

## Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

## To practice all areas of Electronic Devices and Circuits

Assessment Questions, here is complete set of 1000+