Questions On MOS Field Effect Transistors (MOSFETs)

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Electronic Devices and Circuits

Questions for Campus Interviews
by Manish
4-5 minutes
This set of Electronic Devices and Circuits Questions and

Answers for Campus interviews focuses on “MOSFETs
Device Strucuture and Physical Operation”.
1. For NMOS transistor which of the following is not true?

a) The substrate is of p-type semiconductor
b) Inversion layer or induced channel is of n type
c) Threshold voltage is negative
d) None of the mentioned
View Answer
Answer: c
Explanation: The threshold voltage is positive for NMOS.
2. Process transconductance parameter is directly

proportional to
a) Electron mobility only
b) (Electron mobility)-1 only
c) Oxide capacitance only
d) Product of oxide capacitance and electron mobility
View Answer
1 of 5 3/16/18, 9:55 AM
Answer: d
Explanation: It is the product of the electronic mobility with
the oxide capacitance (F/m2).
3. The SI Units of the Process transconductance Parameter

(k’) is
a) V2/A
b) A/V2
c) V/A
d) A/V
View Answer
Answer: b
Explanation: k’ = µn Cox where µn is electronic mobility
(m2/Vs) and Cox is oxide capacitance is (F/m2).
4. Aspect ratio of the MOSFET has the units of

a) No units
b) m
c) m2
d) m-1
View Answer
Answer: a
Explanation: It is the ratio of the induced channel width (w)
to the induced channel length (l).
5. The MOSFET transconductance parameter is the

product of
a) Process transconductance and inverse of aspect ratio
b) Inverse of Process transconductance and aspect ratio
c) Inverse of Process transconductance and inverse of
aspect ratio
2 of 5 3/16/18, 9:55 AM
d) Process transconductance and aspect ratio

View Answer
Answer: d
Explanation: This statement only satisfies the mathematical
expression.
6. With the potential difference between the source and the

drain kept small (VDS is small), the MOSFET behaves as a
resistance whose value varies __________ with the
overdrive voltage
a) Linearly
b) Inversely
c) Exponentially
d) Logarithmically
View Answer
Answer: b
Explanation: For small VDS, resistance r is given by
R = 1 / ((µn Cox)(w/l)(VOV)).
7. For a p channel MOSFET which of the following is not

true?
a) The source and drain are a p type semiconductor
b) The induced channel is p type region which is induced by
applying a positive potential to the gate
c) The substrate is a n type semiconductor
View Answer
Answer: b
Explanation: The induced channel is p type region which is
induced by applying a negative potential to the gate.
3 of 5 3/16/18, 9:55 AM
8. When the voltage across the drain and the source (VDS)
is increased from a small amount (assuming that the gate
voltage, VG with respect to the source is higher than the
threshold voltage, Vt), then the width of the induced channel
in NMOS (assume that VDS is always small when compared
to the Vov)
a) Will remain as was before
b) Will become non uniform and will take a tapered shape
with deepest width at the drain
c) Will become non uniform and will take a tapered shape
with deepest width at the source
d) Will remain uniform but the width of the channel will
increase
View Answer
Answer: c
Explanation: The voltage across the source will be VOV and
the voltage will decrease linearly to VOV – VDS as we reach
the drain end. The width of the induced channel is
proportional to the voltage.
9. The saturation current of the MOSFET is the value of the

current when
a) The voltage between the drain and drain becomes equal
to the overdrive voltage
b) The voltage between the drain and drain becomes equal
to the threshold voltage
c) The voltage between the drain and drain becomes equal
to the voltage applied to the gate
d) The voltage between the drain and drain becomes equal
4 of 5 3/16/18, 9:55 AM
to difference the overdrive voltage and the threshold

voltage
View Answer
Answer: a
Explanation: By definition of the MOSFET saturation
current.
10. At channel pinch off

a) The width of the induced channel becomes non linear
b) The width of the induced channel becomes very large
(resulting in very large resistance and very low, practically
zero, current)
c) width becomes 1/e times the maximum possible width
d) The width of the induced channel becomes zero and the
current saturates
View Answer
Answer: d
Explanation: It is a characteristics of a channel pinch off.
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Electronic Devices and Circuits.
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Campus Interviews, here is complete set of 1000+ Multiple
Choice Questions and Answers.
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MOSFETs Current-Voltage
Characterisitcs Questions and
Answers
by Manish
4-5 minutes
This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “MOSFETs
Current-Voltage Characterisitcs”.
1. If a MOSFET is to be used in the making of an amplifier

then it must work in
a) Cut-off region
b) Triode region
c) Saturation region
d) Both cut-off and triode region can be used
View Answer
Answer: c
Explanation: Only in the saturation region a MOSFET can
operate as an amplifier.
2. For MOSFET is to be used as a switch then it must

operate in
a) Cut-off region
b) Triode region
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d) Both cut-off and triode region can be used
View Answer
Answer: d
Explanation: In both regions it can perform the task of a
switch.
(Q.3 & Q.4) Using the circuit shown below,
3. Determine the conditions in which the MOSFET is

operating in the triode region.
i. VGD > Vt (Threshold voltage)
ii. VDS > VOV
iii. ID ∝ (VOV – 0.5VDS)VDS
a) i, ii, and iii are correct

b) i and iii are correct
c) i and ii are correct
d) ii and iii are correct
View Answer
Answer: b
Explanation: Only the points I and iii are correct and ii is
false.
4. Determine the conditions in which the MOSFET is
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operating in the saturation region

i. VGD > Vt (Threshold voltage)
ii. VDS > VOV
iii. ID ∝ (VOV)2
a) i, ii, and iii are correct

b) i and iii are correct
c) i and ii are correct
d) ii and iii are correct
View Answer
Answer: d
Explanation: i is false and ii and iii are true.
5. In the saturation region of the MOSFET the saturation

current is
a) Independent of the voltage difference between the
source and the drain
b) Depends directly on the voltage difference between the
source and the drain
c) Depends directly on the overdriving voltage
d) Depends directly on the voltage supplied to the gate
terminal
View Answer
Answer: a
Explanation: Saturation current does not depends on the
voltage difference between the source and the drain in the
saturation region of a MOSFET.
6. An n-channel MOSFET operating with VOV=0.5V exhibits

a linear resistance = 1 kΩ when VDS is very small. What is
the value of the device transconductance parameter kn?
3 of 6 3/16/18, 9:56 AM
a) 2 mA/V2
b) 20 mA/V2
c) 0.2 A/V2
d) 2 A/V2
View Answer
Answer: a
Explanation: Use the standard mathematical expression to
determine the value of kn.
7. An NMOS transistor is operating at the edge of saturation

with an overdrive voltage VOV and a drain current ID. If is
VOV is doubled, and we must maintain operation at the
edge of saturation, what value of drain current results?
a) 0.25ID
b) 0.5ID
c) 2ID
d) 4ID
View Answer
Answer: c
Explanation: I0 is directly proportional to VOS.
(Q.8-Q.10) Using the circuit below answer the question
8. Which of the following is true for the triode region?

a. VDG > Vtp
4 of 6 3/16/18, 9:56 AM
b. VSD < VOV

c. ID ∝ VOV
d. None of the mentioned
View Answer
Answer: d
Explanation: VDG > |Vtp| and VSD < |VOV|.
9. Which of the following is true for the saturation region?

a) VDG ≤ |Vtp|
b) VSD ≤| VOV|
c) VDG < |Vtp|
d) VSD <| VOV|
View Answer
Answer: a
Explanation: It is a characteristic for the saturation region.
10. The current iD

a) Depends linearly on VOV in the saturation region
b) Depends on the square of VOV in the saturation region
c) Depends inversely on VOV in the triode region
View Answer
Answer: b
Explanation: Use the standard mathematical expressions
for i0 in different regions.

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Tough Electronic Devices and

Circuits Questions and Answers
by Manish
3-4 minutes
This set of Tough Electronic Devices and Circuits Questions

and Answers focuses on “MOSFETs Circuits at DC”.
1. The transistor in the circuit shown below has kn = 0.4

mA/V2, Vt = 0.5 V and λ = 0. Operation at the edge of
saturation is obtained when
a) (W/L)RD = 0.5 kΩ
b) (W/L)RD = 1.0 kΩ
c) (W/L)RD = 1.5 kΩ
d) (W/L)RD = 2.0 kΩ
View Answer
1 of 8 3/16/18, 9:56 AM
Answer: c
Explanation: Use the standard formula for edge saturation.
2. The PMOS transistor in the circuit shown has Vt = −0.7

V, µpCox = 60 µA/V2, L = 0.8 µm, and λ = 0. Find the value
of R in order to establish a drain current of 0.115 mA and a
voltage VD of 3.5 V.
a) 12.5 KΩ
b) 25 kΩ
c) 37.5 kΩ
d) 50 kΩ
View Answer
Answer: a Explanation:
3. The NMOS transistors in the circuit shown have Vt = 1 V,

µnCOX = 120 µA/V2, λ = 0, and L1 = L2 = L3 = 1µm. Then
which of the following is not the value of the width of these
MOSFETs shown
a) 2 µm
b) 8µm
2 of 8 3/16/18, 9:56 AM
c) All of the mentioned

View Answer
Answer: d Explanation:
4. The MOSFET shown has Vt = 1V, kn = 100µA/V2 and λ =

0. Find the required values of W/L and of R so that when vI
= VDD = +5 V, rDS = 50 Ω, and VO = 50 mV.
a) W/L = 25 and R = 4.95 kΩ

b) W/L = 25 and R = 9.90 kΩ
c) W/L = 50 and R = 4.95 kΩ
d) W/L = 50 and R = 9.90 kΩ
View Answer
Answer: c Explanation:
3 of 8 3/16/18, 9:56 AM
(Q.5-Q.7) For each of the circuits shown find the labeled

voltages. For all transistors, kn(W/L) = 1 mA/V2, Vt = 2V,
and λ = 0
5. Find V3
a) 2.41V
b) 3.41V
c) 4.41V
d) 1.41V
View Answer
Answer: b
Explanation: V3 = 10- 4 * 2 + 1.4 = 3.4v.
6. Find V4 and V5
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a) 4V and -5V respectively

b) -4V and 5V respectively
c) 4V and 5V respectively
d) -4V and -5V respectively
View Answer
7. Find V1 and V2
a) 2V and -4V
b) -2V and 4V
c) 2V and 4V
d) -2V and -4V
View Answer
Answer: c
Explanation: ID = 1 = 1⁄2 * 1 * (VGS – 2)2 => VGS = 3.41v.
V3 = 3.41v.
(Q.8 & Q.9) For each of the circuits shown find the labeled
node voltages. The NMOS transistors have Vt = 1 V and kn(
W/L ) = 2 mA/V2 and λ = 0
5 of 8 3/16/18, 9:56 AM
8. Find V1 and V2
a) 2.44 and -1.28 V

b) 2.44 and -2.56 V
c) 1.22 and -2.56 V
d) 1.22 and -1.28 V
View Answer
Answer: b Explanation:
9. Find V3 and V4
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a) 3.775V and 5V
b) 3.775V and 2.55V
c) 7.55V and 2.55V
d) 7.555V and 5V
View Answer
10. For the PMOS transistor in the circuit shown kn= 8

µA/V2, W/L = 25,|Vtp| = 1V and I = 100µA. For what value of
R is VSD = VSG?
7 of 8 3/16/18, 9:56 AM
a) 0 Ω
b) 12.45 kΩ
c) 25.9 kΩ
d) 38.35 kΩ
View Answer
Answer: a
Explanation: VSG will be equal to VSD only when the
resistance shown is zero or in other words there should not
be any resistance.

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MOSFET Amplfier Design

Questions and Answers
by Manish
3-4 minutes

Questions & Answers (MCQs) focuses on “MOSFET in
Amplfier Design”.
(Q.1 & Q.2) Various measurements are made on an NMOS

amplifier for which the drain resistor RD is 20 kΩ. First, DC
measurements show the voltage across the drain resistor,
VRD, to be 2 V and the gate-to-source bias voltage to be 1.2
V. Then, ac measurements with small signals show the
voltage gain to be −10 V/V.
1. What is the value of Vt for this transistor?

a) 0.7V
b) 0.8V
c) 0.9V
d) 1.0V
View Answer
1 of 7 3/16/18, 9:56 AM
2. If the process transconductance parameter is 50µA/V2,

what is the MOSFET’s W/L?
a) 25
b) 50
c) 75
d) 100
View Answer
(Q.3-Q.5) Consider the amplifier below for the case VDD = 5
V, RD = 24 kΩ, (W/L) = 1 mA/V2, and Vt = 1 V.
2 of 7 3/16/18, 9:56 AM
3. If the amplifier is biased to operate with an overdrive

voltage VOV of 0.5 V, find the incremental gain at the bias
point.
a) -3 V/V
b) -6 V/V
c) -9 V/V
d) -12 V/V
View Answer
4. For amplifier biased to operate with an overdrive voltage

of 0.5V, and disregarding the distortion caused by the
MOSFET’s square-law characteristic, what is the largest
amplitude of a sine-wave voltage signal that can be applied
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at the input while the transistor remains in saturation?

a) 1.61 V
b) 1.5 V
c) 0.11 V
d) 3.11 V
View Answer
Answer: b
Explanation: Use the standard mathematical formula to
obtain the result.
5. For the input signal of 1.5V what is the value of the gain
value obtained?
a) -12.24 V/V
b) -12.44 V/V
c) -12.64 V/V
d) -12.84 V/V
View Answer
Answer: c
Explanation: The amplitude of the output voltage signal that
results is approximately equal to Voq – VOB = 2 – 0.61 =
1.39v.
The gain implied by amplitude is
Gain = -1.39/0.11 = -12.64 V/V.
6. Which of the following is the fastest switching device?

a) JEFT
b) Triode
c) MOSFET
d) BJT
View Answer
4 of 7 3/16/18, 9:56 AM
Answer: c
Explanation: MOSFET is the fastest switching device
among the given four options.
7. Bias point is also referred by the name

a) DC Operating Point
b) Quiescent Point
c) None of the mentioned
d) All of the mentioned
View Answer
Answer: d
Explanation: Bias point is called dc operating point as the
MOSFET functions best at this point. Also since at the bias
point no signal component is present it is called quiescent
point (he reason why it is represented by the symbol ‘Q’)
(Q.8 –Q.10) Consider the amplifier circuit shown below. The

transistor is specified to have Vt = 0.4 V, kn = 0.4 mA/V2,
W/L = 10 and λ = 0. Also, let VDD = 1.8V, RD = 17.5kΩ, VGS
= 0.6V and vgs = 0V.
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8. Find ID.
a) 0.08 mA
b) 0.16 mA
c) 0.4 mA
d) 0.8 mA
View Answer
9. Find VDS.
a) 0.1V
b) 0.2 V
c) 0.4 V
d) 0.8 V
View Answer
6 of 7 3/16/18, 9:56 AM
10. Find Av.
a) -12 V/V
b) -14 V/V
c) -16 V/V
d) -18 V/V
View Answer
Solution: b
Explanation: Av = – kn Vov RD
= -0.4 * 10 * 0.2 * 17.5
= – 14.4v


and Answers.
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Tricky Electronic Devices and

by Manish
4-5 minutes
This set of Tricky Electronic Devices and Circuits Questions

and Answers focuses on “MOSFET in Small Signal
Operation”.
1. An NMOS technology has µnCox = 50 µA/V2 and Vt = 0.7

V. For a transistor with L = 1µm, find the value of W that
results in gm 1mA/V at ID = 0.5 mA.
a) 10 µm
b) 20 µm
c) 30 µm
d) 40 µm
View Answer
2. Consider an NMOS transistor having kn= 2 mA/V2. Let

the transistor be biased at VOV = 1V. For operation in
saturation, what dc bias current ID results? If a +0.1-V
1 of 6 3/16/18, 9:56 AM
signal is superimposed on VGS, find the corresponding

increment in collector current by evaluating the total
collector current ID and subtracting the dc bias current ID.
a) ID = 1mA and Increment = 0.21 mA
b) ID = 1mA and Increment = 0.42 mA
c) ID = 2mA and Increment = 0.21 mA
d) ID = 2mA and Increment = 0.42 mA
View Answer
3. We know ID =1/2 kn (VGS + vgs – Vt)2. Let the signal vgs

be a sine wave with amplitude Vgs, and substitute vgs = Vgs
sin ω t in Eq.(5.43). Using the trigonometric identity show
that the ratio of the signal at frequency 2ω to that at
frequency ω , expressed as a percentage (known as the
second-harmonic distortion) is
a) Vgs/Vov x 100%
b) 1/2Vgs/Vov x 100%
c) 1/4Vgs/Vov x 100%
d) 1/8Vgs/Vov x 100%
View Answer
2 of 6 3/16/18, 9:56 AM
4. If in a particular application Vgs is 10 mV, find the

minimum overdrive voltage at which the transistor should be
operated so that the second-harmonic distortion is kept to
less than 1%.
a) 1V
b) 0.75V
c) 0.5V
d) 0.25V
View Answer
(Q.5-Q.7) An NMOS amplifier is to be designed to provide a

0.50-V peak output signal across a 50-kΩ load that can be
used as a drain resistor.
5. If a gain of at least 5 V/V is needed, what value of gm is

required?
a) 0.1 mA/V
b) 0.2 mA/V
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c) 0.4 mA/V
d) 0.8 mA/V
View Answer
Answer: a
Explanation: gmRd = 5 or gm= 5/50 mA/V.
6. Using a dc supply of 3 V, what values of ID and VOV

would you choose?
a) 0.34 mA and 0.35 V respectively
b) 0.34 mA and 0.69 V respectively
c) 0.034 mA and 0.35 V respectively
d) 0.034 mA and 0.69 V respectively
View Answer
7. What W/L ratio is required if µnCox = 200 µA/V2?

a) 1.23
b) 1.23
c) 1.43
d) 1.53
View Answer
4 of 6 3/16/18, 9:56 AM
(Q.8-Q.9) For a 0.8-µm CMOS fabrication process: Vtn= 0.8

V, Vtp = −0.9 V, µnCox = 90 µA/V2, µpCox = 30 µA/V2, Cox =
1.9 fF/µm2, VA (n-channel devices) = 8L (µm), and |VA| (p-
channel devices) = 12L (µm).
8. Find the small-signal model parameters (gm, ro and gmb)

for an NMOS transistor having W/L = 20 µm/2 µm and
operating at ID = 100 µA and |VSB| = 1V.
a) gm= 0.42mA/V, ro= 160 kΩ, gmb = 0.084 mA/V
b) gm= 0.21mA/V, ro= 160 kΩ, gmb= 0.042 mA/V
c) gm= 0.42mA/V, ro= 80 kΩ, gmb = 0.042 mA/V
d) gm= 0.24mA/V, ro= 80 kΩ, gmb = 0.084 mA/V
View Answer
9. Find the small-signal model parameters (gm, ro and gmb)

for a PMOS transistor having W/L = 20 µm/2 µm and
operating at ID = 100 µA and |VSB| = 1V.
a) gm= 0.24mA/V, ro= 240 kΩ, gmb = 0.024 mA/V
5 of 6 3/16/18, 9:56 AM
b) gm= 0.24mA/V, ro= 120 kΩ, gmb = 0.048 mA/V

c) gm= 0.24mA/V, ro=240 kΩ, gmb = 0.048 mA/V
d) gm= 0.12mA/V, ro= 240 kΩ, gmb = 0.048 mA/V
View Answer
10. The overdrive voltage at which each device must be

operating is
a) NMOS = 0.83V and PMOS = 0.48V
b) NMOS = 0.48V and PMOS = 0.83V
c) NMOS = 0.24V and PMOS = 0.41V
d) NMOS = 0.41V and PMOS = 0.24V
View Answer
Answer: b Explanation: NMOS case
PMOS case

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Basic MOSFET Amplifier

Configurations Questions and
Answers
by Manish
4-5 minutes

Questions & Answers (MCQs) focuses on “Basic MOSFET
Amplifier Configurations”.
1. In which of the following configuration does a MOSFET

works as an amplifier?
a) Common Source (CS)
b) Common Gate (CG)
c) Common drain (CD)
View Answer
Answer: d
Explanation: There are three basic configurations for
connecting the MOSFET as an amplifier. Each of these
configurations is obtained by connecting one of the three
MOSFET terminals to ground, thus creating a two-port
network with the grounded terminal being common to the
input and output ports.
1 of 7 3/16/18, 9:56 AM
2. The MOSFET in the following circuit is in which

configuration?

b) Common Gate (CG)
c) Common Drain (CD)
View Answer
Answer: b
Explanation: It is the circuit for Common gate configuration.

configuration?

b) Common Gate (CG)
2 of 7 3/16/18, 9:56 AM

View Answer
Answer: c
Explanation: It is the circuit for Common drain configuration.
configuration?[/expand]
b) Common Gate (CG)
View Answer
Answer: a
Explanation: It is the circuit for Common source
configuration.
(Q.5-Q.10) Reference circuit for Q.5-Q.10 The circuit below

is the characterization for the amplifier as a functional block.
5. If the value of Rin for the common source configuration is

R1 and that for common source with a source resistance
configuration is R2 ideally. The ratio of R1/R2 will be
a) R1/R2 = 1
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b) 0 < R1/R2 < 1

c) R1/R2 > 1
d) R1/R2 = 0
View Answer
Answer: a
Explanation: Ideally both must have infinite resistance.
6. Which is true for the value of Avo for common source

(Represented by A1) and common source with a source
resistance (represented by A2).
a) A1 = A2
b) A1 > 2
c) A1 < A2
d) |A1| < |A2|
View Answer
Answer: c Explanation: A1 = -gmRD and A2 =

-gmRD/1+gmRS Reference circuit for Common source
configuration
Reference circuit for

common source with source resistance RS
4 of 7 3/16/18, 9:56 AM
7. Which of the following is true for the voltage gain (AV) for
the common source configuration (represented by A1) and
the common gate configuration (represented by A2)?
a) A1 = A2
b) |A1| = |A2| and A1 ≠ A2
c) |A1| > |A2|
d) |A1| < |A2|
View Answer
Answer: b Explanation: A1 = -gm(RL||RD) and A1 =

gm(RL||RD) Reference figure for common source
configuration
Reference figure for

common gate configuration
8. The value of the voltage gain (Av) for the common source
with source resistance (represented by A1) and common
gate configuration (represented by A2) are related to each
other by
a) A1 > A2
b) |A1| > |A2|
c) A1 < A2
d) A1 > A2 and |A1| > |A2|
View Answer
5 of 7 3/16/18, 9:56 AM
Answer: c Explanation: A1 = – gm(RL||RD)/ 1 + gmRS and

A2 = gm(RL||RD) Reference figure for common source with
source resistance configuration
Reference figure for

common gate configuration
9. In which of the following configuration is the input

resistance (Ri) not equal to zero ideally?
a) Common source configuration
b) Common source configuration with source resistance
c) Common gate configuration
d) Source follower configuration
View Answer
Answer: c Explanation: Refer to the circuit for the common

gate configuration
10. Which of the following has AVO independent of the
6 of 7 3/16/18, 9:56 AM
circuit elements?
a) Common source configuration
b) Common gate configuration
c) Source follower configuration
View Answer
Answer: c
Explanation: AVO = 1 source follower.


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Electronic Devices and Circuits

Problems
by Manish
3 minutes
This set of Electronic Devices and Circuits Problems

focuses on “Biasing in MOS Amplifier Circuit”.
(Q.1-Q.2) A discrete MOSFET common source amplifier

has Rin = 2 MΩ, gmm = 4mA/V, ro = 100 kΩ, RD = 10 kΩ,
Cgs = 2pF and Cgd = 0.5pF. The amplifier is fed from a
voltage source with an internal resistance of 500 kΩ and Is
connected to the a load of 10 kΩ.
1. The value of the overall mixed gain AM is

a) -15.2 V/V
b) -16.2 V/V
c) -17.2 V/V
d) -18.2 V/V
View Answer
1 of 7 3/16/18, 9:57 AM
2. The upper 3-db frequency fH is

a) 11.1 kHz
b) 22.1 kHz
c) 33.1 kHz
d) 44.1 kHz
View Answer
(Q.3-Q.4) The amplifier in the figure shown below is biased

to operate at ID = 1mA and gm = 1mA/V.
3. Find the midband gain.
2 of 7 3/16/18, 9:57 AM
a) 0.43 V/V
b) 1.43 V/V
c) 2.43 V/V
d) 3.43 V/V
View Answer
4. Find the value of CS that places FL at 10Hz

a) 6.57 µF
b) 12.57 µF
c) 18.57 µF
d) 24.57 µF
View Answer
(Q.5-Q.6) )In the NMOS transistor of the circuit shown

below is biased to have gm = 1mA/V and r0 = 100 kΩ.
3 of 7 3/16/18, 9:57 AM
5. Find AM
a) 1.02 V/V
b) 2.04 V/V
c) 3.06 V/V
d) 4.08 V/V
View Answer
6. Find fH if Cgs = 1 pF and Cgd = 0.2 pF.

a) 875 kHz
b) 875 kHz
c) 875 kHz
d) 875 kHz
View Answer
4 of 7 3/16/18, 9:57 AM
(Q.7-Q.8) For a particular depletion mode NMOS device, Vt

= -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V
7. What is the drain current that flows
a) 104 µA
b) 208 µA
c) 312µA
d) 416 µA
View Answer
8. What is the value of the drain current if both L and W are

doubled?
a) 408 µA
b) 412 µA
c) 416 µA
d) 420 µA
View Answer
5 of 7 3/16/18, 9:57 AM
(Q.9-Q.10) A depletion type N channel MOSFEt with knW/L

= 2 mA/V2 and Vt = 3V has its source and gate grounded.
For Vd = 0.1V and neglecting channel length modulating
effect
9. Find drain current.
a) 1.18 mA
b) 0.89 mA
c) 0.59 mA
d) 0.3 mA
View Answer
10. In which region is the triode operating?

a) Triode region
b) End of saturation region
View Answer
6 of 7 3/16/18, 9:57 AM

To practice all areas of Electronic Devices and Circuits

Problems, here is complete set of 1000+ Multiple Choice
Questions and Answers.
7 of 7 3/16/18, 9:57 AM
Advanced Electronic Devices and Circuits Quest... about:reader?url=https://www.sanfoundry.com/...
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Advanced Electronic Devices and

by Manish
3-4 minutes
This set of Advanced Electronic Devices and Circuits

Questions and Answers focuses on “Discrete-Circuit MOS
Amplifiers”.
1. Calculate the overall voltage gain Gv of a common

source amplifier for which gm = 2mA/V, RD = 10 kΩ, R0 =
10 kΩ and RG = 10 MΩ. The amplifier is fed from a signal
source of Thevenin resistance of 0.5MΩ and the amplifier is
coupled with a load of 10 kΩ.
a) -11.2 V/V
b) -22.4 V/V
c) -33.6 V/V
d) -44.8 V/V
View Answer
1 of 8 3/16/18, 9:57 AM
(Q.2-Q.6) The MOSFEt circuit below has Vt = 1V, knW/L =

0.8 mA/V2 and VA = 40V
2. Find the value of RG so that iD = 0.1 mA, the largest

possible value of RD is used while the maximum signal
swing at the drain is of 1V and the input resistance at the
gate is 10 MΩ.
a) 1 MΩ
b) 10 MΩ
c) 0.1 MΩ
d) 0.01 MΩ
View Answer
2 of 8 3/16/18, 9:57 AM
3. Find the value of gm at the bias point

a) 0.1 mA/V
b) 0.2 mA/V
c) .0.3 mA/V
d) 0.4 mA/V
View Answer
4. If terminal Z is grounded, X is connected to a signal

source having a resistance of 1 MΩ and terminal Y is
connected to a load resistance of 40 kΩ, find the voltage
gain from the signal source to the load.
a) 3.25 v/V
b) 6.5 V/V
c) 9.75 V/V
d) 13 V/V
View Answer
3 of 8 3/16/18, 9:57 AM
5. If terminal Y is grounded find the voltage gain from X to Z

with Z open-circuit.
a) 0.33 V/V
b) 0.66 V/V
c) 0.99 V/V
View Answer
Answer: c Explantion:
6. If terminal X is grounded and terminal Z is connected to a

current source delivering a current of 10 µA and having a
resistance of 100 kΩ, find the voltage signal that can be
measured at Y neglecting the effect of V0 .
a) 0.34V
b) 0.68 V
c) 3.4 V
d) 6.8 V
View Answer
4 of 8 3/16/18, 9:57 AM
(Q.7-Q.8) The NMOS transistor in source follower circuit

shown has gm = 5mA/V and a large r0 .
7. Find the output resistance.

a) 0.1 kΩ
b) 0.2 kΩ
c) 0.3 kΩ
d) 0.4 kΩ
View Answer
8. Find the open-Circuit voltage gain.

a) 1 V/V
5 of 8 3/16/18, 9:57 AM
b) 2 V/V
c) 3 V/V
d) 4 V/V
View Answer
Answer: a Explanation (Q.7-Q.8):
9. The NMOS transistor in the common gate amplifier as

shown in the circuit below has gm = 5 mA/V. Find the input
resistance and the voltage gain.
a) Input resistance: 0.1 kΩ and Voltage gain: 3.05 V/V

b) Input resistance: 0.1 kΩ and Voltage gain: 3.05 V/V
c) Input resistance: 0.2 kΩ and Voltage gain: 3.05 V/V
6 of 8 3/16/18, 9:57 AM
d) Input resistance: 0.2 kΩ and Voltage gain: 7.1 V/V

View Answer
10. If the output of the source follower in (I) is connected to

the input of the common gate amplifier of (II). Determine the
overall voltage gain (V0 /Vi ).
a) 1.55 V/V
b) 3.55 V/V
c) 5.55 V/V
d) 7.55 V/V
7 of 8 3/16/18, 9:57 AM
View Answer

To practice Advanced questions and answers on all areas

of Electronic Devices and Circuits, here is complete set of
8 of 8 3/16/18, 9:57 AM
Body Effect - Electronic Devices and Circuits Qu... about:reader?url=https://www.sanfoundry.com/...
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Body Effect - Electronic Devices

and Circuits Questions and
Answers
by Manish
5-6 minutes

Questions & Answers (MCQs) focuses on “The Body
Effect”.
1. The _____________ of a MOSFET is affected by the

voltage which is applied to the back contact.
a) Threshold Voltage
b) Output Voltage
c) Both threshold and output voltage
d) Neither of the threshold nor the output voltage
View Answer
Answer: a
Explanation: The voltage difference between the source
and the bulk, VBS changes the width of the depletion layer
and therefore also the voltage across the oxide due to the
change of the charge in the depletion region. This results in
a difference in threshold voltage which equals the
difference in charge in the depletion region divided by the
1 of 5 3/16/18, 9:57 AM
oxide capacitance.
2. The variation of the threshold voltage with the applied

bulk-to-source voltage is typically observed by plotting the
_________________ as a function of the source-to-drain
voltage.
a) drain current
b) square root of the drain current
c) square of the drain current
d) natural logarithm of the drain current
View Answer
Answer: b
Explanation: The change in threshold current is directly
proportional to the square root of the drain current. For
further assistance check the mathematical expression for
the same.
3. The SI units of the body effect parameter is

a) Volt
b) Volt X Volt
c) √Volt
d) It has no units
View Answer
Answer: c
Explanation: Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. In this
expression k is the body effect parameter hence its units
can be determined.
4. An NMOS transistor has Vt0 = 0.8 V, 2 φf = 0.7 V, and γ

= 0.4 V1/2. Find Vt when VSB = 3 V.
a) 0.12 V
2 of 5 3/16/18, 9:57 AM
b) 1.23 V
c) 2.34 V
d) 3.45 V
View Answer
Answer: b
Explanation: Vt = Vt0 + k[√(Vsb + 2φf) – √2φf]. use this
expression to obtain the desired result.
5. The threshold voltage is

a) Increases on increasing temperature
b) May increase or decrease on increasing temperature
depending upon other factors
c) Temperature independent
d) Decreases on increasing temperature
View Answer
Answer: d
Explanation: The threshold voltage depends only on the
temperature and it decreases by roughly 2 mV for every
degree Celsius increase in the temperature.
6. As the voltage on the drain is increased, a value is

reached at which the pn junction between the drain region
and substrate suffers avalanche breakdown known as
a) Weak avalanche
b) Strong avalanche
c) Weak storm
d) Punch-through
View Answer
Answer: a
Explanation: As the voltage on the drain is increased, a
3 of 5 3/16/18, 9:57 AM
value is reached at which the pn junction between the drain

region and substrate suffers avalanche breakdown. This
breakdown usually occurs at voltages of 20 V to 150 V and
results in a somewhat rapid increase in current (known as a
weak avalanche).
7. A breakdown effect that occurs in modern devices at low

voltages (of around 20 V) is
a) Weak avalanche
b) Strong avalanche
c) Weak storm
d) Punch-through
View Answer
Answer: d
Explanation: Punch-through occurs in devices with relatively
short channels when the drain voltage is increased to the
point that the depletion region surrounding the drain region
extends through the channel to the source. The drain
current then increases rapidly. Normally, punch-through
does not result in permanent damage to the device.
8. At ______________ the drain current is no longer related

to the Vgs by square law relationship.
a) When the temperature is high (around 700 Celsius)
b) When temperature is very low (around -50 Celsius)
c) Velocity saturation
View Answer
Answer: c
Explanation: At velocity saturation the current depends
4 of 5 3/16/18, 9:57 AM
linearly on the Vgs.
9. In MOSFETs a breakdown may occur at around 30 V.

This is due to
a) Velocity saturation
b) Breakdown of the gate diode
c) Sudden decrease in the depletion region
d) Fall of the threshold voltage due to impurities
View Answer
Answer: b
Explanation: The breakdown of the oxide at the gate may
occur when the voltage is around 30 V. This may also
permanently damage the device.
10. Which of the below issues may not be experienced

when using MOSFETs?
a) Weak avalanche
b) Velocity saturation
c) Punch-through
View Answer
Answer: d
Explanation: All of the mentioned are some of the common
issues that one may face while dealing with MOSFETs.


and Answers.
5 of 5 3/16/18, 9:57 AM

Questions On MOS Field Effect Transistors (MOSFETs)

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Electronic Devices and Circuits Questions for ... about:reader?url=https://www.sanfoundry.com/...

Electronic Devices and Circuits

This set of Electronic Devices and Circuits Questions and

1. For NMOS transistor which of the following is not true?

2. Process transconductance parameter is directly

3. The SI Units of the Process transconductance Parameter

4. Aspect ratio of the MOSFET has the units of

5. The MOSFET transconductance parameter is the

d) Process transconductance and aspect ratio

6. With the potential difference between the source and the

7. For a p channel MOSFET which of the following is not

9. The saturation current of the MOSFET is the value of the

to difference the overdrive voltage and the threshold

10. At channel pinch off

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

This set of Electronic Devices and Circuits Multiple Choice

1. If a MOSFET is to be used in the making of an amplifier

2. For MOSFET is to be used as a switch then it must

(Q.3 & Q.4) Using the circuit shown below,

3. Determine the conditions in which the MOSFET is

a) i, ii, and iii are correct

4. Determine the conditions in which the MOSFET is

operating in the saturation region

a) i, ii, and iii are correct

5. In the saturation region of the MOSFET the saturation

6. An n-channel MOSFET operating with VOV=0.5V exhibits

7. An NMOS transistor is operating at the edge of saturation

(Q.8-Q.10) Using the circuit below answer the question

8. Which of the following is true for the triode region?

b. VSD < VOV

9. Which of the following is true for the saturation region?

10. The current iD

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Tough Electronic Devices and

This set of Tough Electronic Devices and Circuits Questions

1. The transistor in the circuit shown below has kn = 0.4

2. The PMOS transistor in the circuit shown has Vt = −0.7

3. The NMOS transistors in the circuit shown have Vt = 1 V,

c) All of the mentioned

4. The MOSFET shown has Vt = 1V, kn = 100µA/V2 and λ =

a) W/L = 25 and R = 4.95 kΩ

(Q.5-Q.7) For each of the circuits shown find the labeled

a) 4V and -5V respectively

a) 2.44 and -1.28 V

10. For the PMOS transistor in the circuit shown kn= 8

Sanfoundry Global Education & Learning Series –

To practice Tough questions and answers on all areas of

MOSFET Amplfier Design

This set of Electronic Devices and Circuits Multiple Choice

(Q.1 & Q.2) Various measurements are made on an NMOS

1. What is the value of Vt for this transistor?

2. If the process transconductance parameter is 50µA/V2,

3. If the amplifier is biased to operate with an overdrive

4. For amplifier biased to operate with an overdrive voltage

at the input while the transistor remains in saturation?

6. Which of the following is the fastest switching device?

7. Bias point is also referred by the name

(Q.8 –Q.10) Consider the amplifier circuit shown below. The

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Tricky Electronic Devices and