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7

CMOS Fabrication

photoresist
SiO2

p- substrate

Oxidize silicon surface and coat with photoresist

CORNELL
7

CMOS Fabrication

ultraviolet light

mask

p- substrate

Pattern and selectively etch oxide layer

CORNELL
7

CMOS Fabrication

ion implant

photoresist
SiO2
p- substrate

Ion implant for n-well regions

CORNELL
7

CMOS Fabrication

SiO2
n- well
p- substrate

Anneal n-well implant and grow oxide

CORNELL
7

CMOS Fabrication

nitride

n- well SiO2
p- substrate

Remove all oxide, regrow thin oxide, and deposit nitride layer

CORNELL
7

CMOS Fabrication

SiO2
nitride

n- well
p- substrate

Pattern and selectively etch oxide and nitride layers

CORNELL
7

CMOS Fabrication

nitride

n- well SiO2
p- substrate

Grow field oxide in areas without nitride

CORNELL
7

CMOS Fabrication

polysilicon

gate oxide n- well field oxide


p- substrate

Remove nitride and thin oxide, grow gate oxide, and deposit poly

CORNELL
7

CMOS Fabrication

polysilicon
n- well
p- substrate

Pattern and selectively etch polysilicon

CORNELL
7

CMOS Fabrication

photoresist
n- well
p- substrate

Conformally coat entire surface with photoresist

CORNELL
7

CMOS Fabrication

n- well
p- substrate

Remove photoresist to expose regions for n+ implant

CORNELL
7

CMOS Fabrication

n+ implant

n- well
p- substrate

Ion implant for n+ regions and remove all photoresist

CORNELL
7

CMOS Fabrication

photoresist
n- well
p- substrate

Conformally coat entire surface with photoresist

CORNELL
7

CMOS Fabrication

n- well
p- substrate

Remove photoresist to expose regions for p+ implant

CORNELL
7

CMOS Fabrication

p+ implant

n- well
p- substrate

Ion implant for p+ regions and remove all photoresist

CORNELL
7

CMOS Fabrication

SiO2
n- well
p- substrate

Deposit thick oxide layer over entire surface

CORNELL
7

CMOS Fabrication

p+
n+
SiO2
p+ n- well
p- substrate
n+

Anneal and drive in both implants

CORNELL
7

CMOS Fabrication

SiO2
n- well
p- substrate

Planarize surface by chemical-mechanical polishing

CORNELL
7

CMOS Fabrication

contact holes

n- well
p- substrate

Open contact windows in the oxide

CORNELL
7

CMOS Fabrication

metal1

n- well
p- substrate

Fill contact holes with metal and deposit metal1

CORNELL
7

CMOS Fabrication

metal1

n- well
p- substrate

Pattern and selectively etch metal1

CORNELL
7

CMOS Fabrication

SiO2
metal1

n- well
p- substrate

Deposit thick oxide layer over entire surface

CORNELL
7

CMOS Fabrication

SiO2
metal1

n- well
p- substrate

Planarize surface by chemical-mechanical polishing

CORNELL
7

CMOS Fabrication

via holes

n- well
p- substrate

Open via windows in the oxide

CORNELL
7

CMOS Fabrication

metal2

n- well
p- substrate

Fill via holes with metal and deposit metal2

CORNELL
7

CMOS Fabrication

metal2

n- well
p- substrate

Pattern and selectively remove metal2

CORNELL
7

CMOS Fabrication

metal2

SiO2

n- well
p- substrate

Deposit thick oxide layer over entire surface

CORNELL