You are on page 1of 8

FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT

March 2014

FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features General Description
• High Speed Switching Using Fairchild's proprietary trench design and advanced NPT
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
• High Input Impedance
easy parallel operation. This device offers the optimum perfor-
• Built-in Fast Recovery Diode
mance for hard switching application such as UPS, welder
applications.
Applications
• UPS, Welder

G C E
TO-264 3L
E

Absolute Maximum Ratings


Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1000 V
VGES Gate to Emitter Voltage  25 V
Collector Current @ TC = 25oC 60 A
IC
Collector Current @ TC = 100oC 42 A

ICM (1) Pulsed Collector Current @ TC = 25oC 200 A

IF Diode Continuous Forward Current @ TC = 100oC 15 A


o
Maximum Power Dissipation @ TC = 25 C 180 W
PD
Maximum Power Dissipation @ TC = 100oC 72 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Ratings Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case 0.69 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case 2.08 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient 25

©2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGL60N100BNTD FGL60N100BNTD TO-264 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1000 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 60 mA, VCE = VGE 4.0 5.0 7.0 V
IC =10 A, VGE = 15 V - 1.5 1.8 V
VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, - 2.5 2.9 V

Dynamic Characteristics
Cies Input Capacitance - 6000 - pF
Coes Output Capacitance VCE = 10 V, VGE = 0 V, - 260 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 200 - pF

Switching Characteristics

td(on) Turn-On Delay Time - 140 - ns


VCC = 600 V, IC = 60 A,
tr Rise Time - 320 - ns
RG = 51 , VGE = 15 V,
td(off) Turn-Off Delay Time Inductive Load, TC = 25oC - 630 - ns
tf Fall Time - 130 - ns
Qg Total Gate Charge - 275 - nC
Qge Gate to Emitter Charge VCE = 600 V, IC = 60 A, - 45 - nC
VGE = 15 V, TC = 25oC
Qgc Gate to Collector Charge - 95 - nC

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit


- 1.2 1.7 V
VFM Diode Forward Voltage IF = 15 A
- 1.8 2.1 V
IF = 60 A
- 1.2 1.5 us
trr Diode Reverse Recovery Time IF = 60 A, di/dt = 20 A/us
- 0.05 2.0 uA
IR Instantaneous VRRM = 1000 V

©2000 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics


100 90
Common Emitter 20V Common Emitter
TC = 25℃ 15V 8V VGE = 15V
80
10V TC = 25℃ ━━
80 9V TC = 125℃ ------ TC = 25℃
70
Collector Current, I C [A]

Collector Current, I C [A]


60
60 TC = 125℃
50

40
40
30
7V
20 20

10
VGE = 6V
0 0
0 1 2 3 4 5
0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level

10
Common Emitter Common Emitter
VGE=15V O
T C= - 40 C
Collector-Emitter Voltage, VCE [V]

3 8
Collector-Emitter Voltage, VCE[V]

80A

60A
6

2 30A
4
30A 60A
80A

2
IC=10A

IC=10A
1
0
-50 0 50 100 150
4 8 12 16 20
Case Temperature, TC [℃] Gate-Emitter Voltage, V GE [V]

Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE

10 10
Common Emitter Common Emitter
TC = 25℃ TC = 125℃

8
Collector-Emitter Voltage, VCE [V]

8
Collector-Emitter Voltage, VCE [V]

6 30A
6
60A
30A 80A
4 60A
4
80A

2 2
IC = 10A IC = 10A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

©2000 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Switching Loss vs. Gate Resistance


10000
VCC=600V, IC=60A
10000
Cies VGE=? 5V
o
T C=25 C
Tdoff
1000
Capacitance [pF]

Switching Time [ns]


Tr
1000
Tdon
Tf
Coes

100 100
Cres

Common Emitter
VGE = 0V, f = 1MHz
T C = 25℃

0 5 10 15 20 25 30 10
0 50 100 150 200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [? ]

Figure 9. Switching Characteristics vs. Figure 10. Gate Charge Characteristics


Collector Current
1000 20
V CC =600V, Rg=51Ω Common Emitter
V GE =± 15V, TC =25 ℃ VCC=600V, RL=10 Ω
TC=25 ℃

15
Gate-Emitter Voltage,VGE [V]

Tdoff
Switching Time [ns]

Tf 10

Tr

5
100
Tdon

0
10 20 30 40 50 60 0 50 100 150 200 250 300

Collector Current, I C [A] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Forward Characteristics

100
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
50us
TC = 100 ℃
Forward Current, IF[A]
Collector Current , I C [A]

100us 10
10
1ms
DC Operation TC = 25 ℃

1
1 Single Nonrepetitive Pulse
T C = 25℃
Curve must be darated
linearly with increase
in temperature
0.1 0.1
1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5
Collector-Emitter Voltage, V CE [V] Forward Voltage, VFM [V]

©2000 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Typical Performance Characteristics

Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt vs. Forward Current

1.19 119
IF =60A d i/d t= -2 0 A /u s
1 .2 T C=25 ? 12
T C =25?

Reverse Recovery Current Irr [A]


1.02 102

Reverse Recovery Time, trr [us]


Reverse Recovery Time, trr [us]

Reverse Recovery Current Irr [A]


0.85 85 1 .0 10
t rr
0.68 t rr 68
0 .8 8
I rr
0.51 51

0.34 34 0 .6 6

0.17 Irr 17
0 .4 4

0.00 0
0 40 80 120 160 200 240 10 20 30 40 50 60
di/dt [A/us] F o rw a rd C urre nt, IF [A ]

Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
1000 250
T C = 25 ℃

100
TC = 150℃ 200
Reverse Current, IR [uA]

Capacitance, Cj [pF]

10
150
1

100
0.1

T C= 25℃
0.01 50

1E-3
0
0 300 600 900
0.1 1 10 100
Reverse Voltage, VR [V] Reverse Voltage, V R [V]

Figure 17.Transient Thermal Impedance of IGBT

1 0
[℃/W]

1
THJC

0 .5
Thermal Response, Z

0 .2
0 .1 0 .1
0 .0 5
0 .0 2 PDM
0 .0 1 t1
0 .0 1 t2

s in g le p u ls e
1 E -3
-4 -3 -2 -1 0 1
1 0 1 0 1 0 1 0 1 0 1 0

R e c ta n g u la r P u ls e D u r a t io n [s e c ]

©2000 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
Mechanical Dimensions

Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003

©2000 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ®
®*
®
BitSiC™ Global Power ResourceSM PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
® MicroFET™ SMART START™
SerDes™
MicroPak™ Solutions for Your Success™
® MicroPak2™ SPM ®
Fairchild
Fairchild Semiconductor® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ® SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC ®
SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ® SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY


FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later


Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2000 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com


FGL60N100BNTD Rev. C2
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Fairchild Semiconductor:
FGL60N100BNTD FGL60N100BNTDTU