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AP15N03H/J

Advanced Power N-CHANNEL ENHANCEMENT MODE


Electronics Corp. POWER MOSFET

▼ Low Gate Charge D BVDSS 30V


▼ Simple Drive Requirement RDS(ON) 80mΩ
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▼ Fast Switching ID 15A
G
S

Description

The TO-252 package is universally preferred for all commercial- G D


S
TO-252(H)
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03J) is available for low-profile applications.

G
D
S TO-251(J)

Absolute Maximum Ratings


Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ± 20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 15 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 9 A
1
IDM Pulsed Drain Current 50 A
PD@TC=25℃ Total Power Dissipation 28 W
Linear Derating Factor 0.22 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-case Thermal Resistance Junction-case Max. 4.8 ℃/W
Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W

Data & specifications subject to change without notice 200227032


AP15N03H/J

Electrical Characteristics@T j=25oC(unless otherwise specified)


Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A - - 80 mΩ
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VGS=4.5V, ID=6A - - 100 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 16 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=30V, VGS=0V ` - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
2
Qg Total Gate Charge ID=8A - 4.6 nC
Qgs Gate-Source Charge VDS=24V - 1.1 nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 3 nC
2
td(on) Turn-on Delay Time VDS=15V - 4.9 - ns
tr Rise Time ID=8A - 22.5 - ns
td(off) Turn-off Delay Time RG=3.4Ω,VGS=10V - 12.2 - ns
tf Fall Time RD=1.9Ω - 3.3 - ns
Ciss Input Capacitance VGS=0V - 160 - pF
Coss Output Capacitance VDS=25V - 107 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 15 A
1
ISM Pulsed Source Current ( Body Diode ) - - 50 A
2
VSD Forward On Voltage Tj=25℃, IS=15A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15N03H/J

50 40

T C =25 C o T C =150 o C

V G =10V V G =10V
40
V G =8.0V
30
V G =8.0V

ID , Drain Current (A)


ID , Drain Current (A)

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30

20
V G =6.0V
V G =6.0V
20

10
10
V G =4.0V V G =4.0V

0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

90 1.8

I D =8A
I D =8A
1.6
V G =10V
80 T C =25 o C

1.4
Normalized R DS(ON)

70
RDS(ON) (mΩ )

1.2

60

1.0

50
0.8

40 0.6
2 3 4 5 6 7 8 9 10 11 -50 0 50 100 150

V GS (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance


v.s. Junction Temperature
AP15N03H/J

20 40

15 30
ID , Drain Current (A)

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PD (W)
10 20

5 10

0 0
25 50 75 100 125 150 0 50 100 150

T c , Case Temperature ( o C) T c , Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation


Case Temperature

1
100

DUTY=0.5
Normalized Thermal Response (R thjc)

10us
0.2

0.1
ID (A)

10
100us 0.1

0.05

PDM
0.02
t
1ms
0.01 T
SINGLE PULSE

Duty factor = t/T

T c =25 o C 10ms Peak Tj = P DM x Rthjc + TC

Single Pulse
DC
1
0.01
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP15N03H/J

f=1.0MHz
16 1000

14
I D =8A
VGS , Gate to Source Voltage (V)

12 V DS =16V
V DS =20V Ciss
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10 V DS =24V

C (pF)
8
Coss
100

4
Crss
2

0
10
0 1 2 3 4 5 6 7 8 9 10
1 6 11 16 21 26 31
V DS (V)
Q G , Total Gate Charge (nC)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

100 3

10 2

T j =150 o C
VGS(th) (V)
IS (A)

T j =25 o C

1 1

0.1 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD (V) T j , Junction Temperature( o C)

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
AP15N03H/J

VDS
RD 90%
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VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS


RG G

10%
+ S
10 V
VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE QG
D OSCILLOSCOPE
5V
0.8 x RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform