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# COLLEGE OF ENGINEERING

PUTRAJAYA CAMPUS
TEST 2

## PROGRAMME : Bachelor of Electrical Power Engineering (Honours)

Bachelor of Electrical and Electronics Engineering (Honours)
SUBJECT CODE : EEEB143

## DATE :9 Sept 2009

Name: ID No.:

Section: A/B

INSTRUCTIONS TO CANDIDATES:

COVER PAGE.

## QUESTION 1 [10 marks]

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EEEB143, TET 2 Semester 1 2009/2010

## In the circuit shown in Figure 1, the values of measured parameters are

Shown. Determine the following;
a. IE
b. IC
c. VCE
d. β
e. α

Figure 1 Figure 2

## QUESTION 2[10 marks]

Assume β =100, VA = ∞, R1=10kΏ, R2= 50kΏ, for the circuit in Figure 2, Determine the
following parameters;
a. VTH
b. RTH
c. IBQ
d. ICQ
e. VEC
f. Plot the Q point on the dc load line
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EEEB143, TET 2 Semester 1 2009/2010

Figure 2

## QUESTION 3[10 marks]

Referring to Figure 2, draw the small signal equivalent circuit and determine the small
signal r0, V0, , VS and voltage gain, (AV).

## -END OF QUESTION PAPER-

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EEEB143, TET 2 Semester 1 2009/2010

APPENDIX
EEEB143 FORMULAS

## 1. ni = BT3/2 exp(-Eg/(2kT)) Small-signal transistor models:

2. n0p0 = ni2
3. Jdrift = (enn + enp)E
4. Vbi = kT ln [ (Na Nd) / ni2 )
5. iD = IS [exp(VD/VT) - 1]
6. IE = IC + IB
7. IC = IB
8.  = (1+)-1
9. VBE(on) = 0.7 V
10. r = VT/IBQ, gm=ICQ/VT ro=VA/ICQ
11. Av=Vo/Vi
12. ID = Kn [ 2 (VGS - VTN ).VDS - V 2DS ]
13. ID = Kp [ 2 (VSG + VTP ).VSD - V2SD ]
14. ID = Kn (VGS - VTN )2
15. ID = Kp (VSG + VTP )2
16. VDS(sat) = VGS - VTN
17. VSD(sat) = VSG + VTP
18. ro = [IDQ]-1
19. gm = 2Kn (VGS - VTN)
vGS 2
20. ID = IDSS [ 1 - ]
VP
21. ro = [ IDQ ]-1
2 I DSS vGS
22. gm = ( ) [1 - ]
 VP VP
23. VDS(sat) = vGS - VP
24. VSD(sat) = VP - vGS

CONSTANTS
Material Eg [eV] B [cm-3 K-3/2]
1. Silicon, Si 1.12 5.23 x 1015
2. Galium Arsenide, GaAs 1.4 2.10 x 1014
3. Germanium, Ge 0.66 1.66 x 1015

## GENERAL CONSTANTS AND CONVERSION FACTORS

Constant Symbol Value
Angstrom Å 10-10 m
Boltzmann's constant k 1.38 x 1023 J/K, 8.6 x 10-5 eV/K
Electron-volt eV 1.6 x 10-19 J
Electronic charge e or q 1.6 x 10-19 C
Thermal Voltage VT kT/e or 0.026V at 300K

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