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2SB1109, 2SB1110

Silicon PNP Epitaxial

Application
Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610

Outline

TO-126 MOD

1. Emitter
2. Collector
1 3. Base
2
3

Absolute Maximum Ratings (Ta = 25°C)


Ratings
Item Symbol 2SB1109 2SB1110 Unit
Collector to base voltage VCBO –160 –200 V
Collector to emitter voltage VCEO –160 –200 V
Emitter to base voltage VEBO –5 –5 V
Collector current IC –100 –100 mA
Collector power dissipation PC 1.25 1.25 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
2SB1109, 2SB1110
Electrical Characteristics (Ta = 25°C)
2SB1109 2SB1110
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO –160 — — –200 — — V IC = –10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO –160 — — –200 — — V IC = –1 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 µA, IC = 0
breakdown voltage
Collector cutoff current ICBO — — –10 — — — µA VCB = –140 V, IE = 0
— — — — — –10 µA VCE = –160 V, IE = 0
1
DC current tarnsfer hFE1* 60 — 320 60 — 320 VCE = –5 V, IC = –10
ratio mA
hFE2 30 — — 30 — — VCE = –5 V, IC = –1 mA
Base to emitter voltage VBE — — –1.5 — — –1.5 V IC = –5 V, IC = –10 mA
Collector to emitter VCE(sat) — — –2 — — –2 V IC = –30 mA, IB = –3
saturation voltage mA
Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10
mA
Collector output Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f =
capacitance 1 MHz
Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows.

B C D
60 to 120 100 to 200 160 to 320

Maximum Collector Dissipation Curve Typical Output Characteristics


1.5
–20
Collector power dissipation Pc (W)

Collector Current IC (mA)

–16 –120
–110
1.0
–100
–12 –90
–80
–70
–8 –60
0.0 –50
–40
–4 –30
–20
–10 µA
IB = 0
0 50 100 150 0 –2 –4 –6 –8 –10
Ambient Temperature Ta (°C) Collector to emitter Voltage VCE (V)

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2SB1109, 2SB1110

DC Current Transfer Ratio vs.


Typical Transfer Characteristics Collector Current
–100 500
VCE = –5 V
VCE = –5 V

DC current transfer ratio hFE


–50

Collector Current IC (mA)


200

°C
Ta = 75°C

5
Ta = 7
–20 100

–25
25
25
–10 50
–25

–5
20

–2 10

–1 5
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1 –2 –5 –10 –20 –50 –100
Base to emitter voltage VBE (V) Collector current IC (mA)

Gain Gandwidth Product vs.


Saturation Voltage vs. Collector Current Collector Current
–5 500
Collector to emitter saturation voltage

Gain bandwidth product fT (MHz)


Base to emitter saturation voltage

lC = 10 lB VCE = –10 V
–2 200

–1.0 VBE (sat) TC = –25°C 100


VCE (sat) (V)

VBE (sat) (V)

–0.5 50
25
75
–0.2 75 20
25
VCE (sat)
–0.1 °C 10
–25
TC =
–0.05 5
–1 –2 –5 –10 –20 –50 –100 –0.5 –1.0 –2 –5 –10 –20 –50
Collector current IC (mA) Collector current IC (mA)

Collector Output Capacitance vs.


Collector to Base Voltage
50
Collector output capacitance Cob (pF)

f = 1 MHz
IE = 0
20

10

1.0

0.5
–1 –2 –5 –10 –20 –50 –100
Collector to base voltage VCB (V)

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2SB1109, 2SB1110

Notice
When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.

3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.

4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.

5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.

6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

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2SB1109, 2SB1110

Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109

For further information write to:


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