You are on page 1of 1

(7 0 Ω ) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
2SB1560 B

Equivalent circuit C

Application : Audio, Series Regulator and General Purpose


■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.8±0.2
µA 15.6±0.4

5.0±0.2
VCBO –160 V ICBO VCB=–160V –100max

2.0

1.8
9.6 2.0±0.1

VCEO –150 V IEBO VEB=–5V –100max µA


VEBO –5 V V(BR)CEO IC=–30mA –150min V

19.9±0.3

4.0
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V
PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V
2

4.0max
20.0min
Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)


5.45±0.1 5.45±0.1 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


A (V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at ) (V )

–10 . 5m –3 –10
–2 mA
mA

– 2 .0
–10

–1 .5m A

–8 –1. 2mA –8

Collector Current I C (A)


–1.0 mA
Collector Current I C (A)

–2
–6 –0.8m A –6
–10A
–0.6m A
–7A

mp)

)
Temp
)
–4 –4

Temp
I B =–0.4mA I C =–5A

e Te
–1

(Case
(Cas

(Case
125˚C
–2 –2

–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j - a ( ˚ C/W)

(V C E =–4V) (V C E =–4V)
40,000 50000 3

125˚C
DC Curr ent Gain h F E

DC Curr ent Gain h F E

Transient Thermal Resistance

Typ

10000 25˚C 1
10,000

5000 –30˚C 0.5


5,000

1000

1,000 500 0.1


–0.2 –0.5 –1 –5 –10 –0.2 –0.5 –1 –5 –10 1 5 10 50 100 500 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =–12V)
100 –30 100

10
Maxim um Power Dissipation P C (W)

10 m
80 –10 0m s
Cut- off F req uency f T (M H Z )

s
W

–5 DC
ith
Co lle ctor Cu rre nt I C ( A)

In
fin

60 Typ
ite
he

50
at

–1
si
nk

40
–0.5

Without Heatsink
20 Natural Cooling

–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

48