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Agilent 4N35 Phototransistor Optocoupler General Purpose Type

Data Sheet

Description The 4N35 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, tr , is typically 3 µs and minimum CTR is 100% at input current of 10 mA.

Ordering Information Specify part number followed by Option Number (if desired). 4N35-XXX Option Number 060 W00 300 500 = = = = VDE0884 Option 0.4" Lead Spacing Option Lead Bend SMD Option Tape and Reel Packaging Option

Features • High Current Transfer Ratio (CTR: min. 100% at IF = 10 mA, VCE = 10 V) • Response time (tr: typ., 3 µs at VCE = 10 V, IC = 2 mA, RL = 100 Ω) • Input-output isolation voltage (Viso = 3550 Vrms) • Dual-in-line package • UL approved • CSA approved • VDE approved • Options available: – Leads with 0.4" (10.16 mm) spacing (W00) – Leads bends for surface mounting (300) – Tape and reel for SMD (500) – VDE 0884 approvals (060) Applications • I/O interfaces for computers • System appliances, measuring instruments • Signal transmission between circuits of different potentials and impedances

Functional Diagram
PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4
ANODE 1 + IF 6 BASE

Schematic

VF CATHODE – 2 IC 5 COLLECTOR

1 1. ANODE 2. CATHODE 3. NC

2

3
4

4. EMITTER 5. COLLECTOR 6. BASE

EMITTER

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

5 (0.3 (0.3 ± 0.02) 0.110) 3.110) 0.1 (0.3 ± 0.14) 7.5 ± 0.5 ± 0.3) 3.1 (0. (0.25 (0.5 (0.3 ± 0.9 ± 0.014) 1.5 (0.54 ± 0.25 (0.1 (0.15/-0.62 ± 0.16 ± 0.1) 0.54 ± 0.5 ± 0.0 ± 0.10 (0.35 +0.5 (0.287) 7.138) 7.Package Outline Drawings TYPE NUMBER 6 5 4 OPTION CODE FOR OPTION 060 ONLY 3.09) 6.4) 0.047) 2.5 ± 0.5 TYP.5 ± 0.5 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) Package Outline – Option 300 7.5 (0.3 (0.02) 2.138) 6.4) 2.62 ± 0.256) 2.5 (0.5 ± 0.256) 2.35 ± 0.62 ± 0.25 (0.5 ± 0.5 (0.25 (0.3) A 4N35 V YYWW PIN ONE DOT DATE CODE 1 2 3 6.5 (0.287) 7.25 (0.54 ± 0.8 ± 0.258) 1.13) 0.1) 0.2 ± 0.5 (0.138) 6.98 Package Outline – Option W00 7.5 (0.014) 10.16 ± 0.62 ~ 9.5 (0.5 ± 0.014) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 .8 ± 0.15/-0.3 ± 0.272) 0.15/-0.3 (0.5 (0.35 +0.10 (0.5 (0.287) 7.3 (0.039) 10.02) DIMENSIONS IN MILLIMETERS AND (INCHES) 2.5 (0.10 (0.3 ± 0.3) 3.35 +0.

5 Units V µA pF nA µA V V V mA % V µs µs Ω pF Test Conditions IF = 10 mA VR = 4 V V = 0. IF = 0 IC = 0. R. – – – – – 30 7 70 10 100 – – – 5 x 1010 – Typ. PI Collector Current. IF = 0. VR Input Power Dissipation. IC = 2 mA RL = 100 Ω DC 500 V 40 ~ 60% R. IF Reverse Input Voltage. 1. TS Operating Temperature. IF = 0 IE = 10 µA. VECO Collector-Base Voltage. VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage. IF = 0. TA = 100˚C IC = 0.H. V iso (AC for 1 minute.H. f = 1 KHz VCE = 10 V. IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA.3 10 10 – 2. TA = 25˚C VCE = 30 V.1 mA.Absolute Maximum Ratings Storage Temperature.6 mm below seating plane) Average Forward Current.1 mA. 1. IC Collector-Emitter Voltage. IC = 2 mA VCC = 10 V. f = 1 MHz * CTR = IC x 100% IF 3 .5 10 – 50 500 – – – – 0.2 – 50 – – – – – – – – 3 3 1 x 1011 1 Max. = 40 ~ 60%) –55˚C to +150˚C –55˚C to +100˚C 260˚C for 10 s 60 mA 6V 100 mW 100 mA 30 V 7V 70 V 300 mW 350 mW 3550 Vrms Electrical Specifications (TA = 25˚C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR VCE(sat) tr tf Riso Cf Min. VCEO Emitter-Collector Voltage. V = 0. TA Lead Solder Temperature. max. (1.

Collector power dissipation vs.) 150 IF = 10 mA VCE = 10 V 20 100 RBE = 10 IF = 5 mA IF = 2 mA 50 500 kΩ 0 0. 4 . Figure 8.2 0.5 2. Figure 5.04 0.1 0. Relative current transfer ratio vs.5 1 2 5 10 20 50 TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C RL – LOAD RESISTANCE – kΩ Figure 7. temperature.0 1. Collector current vs.05 10-8 5 VCE = 10 V IC = 2 mA TA = 25°C tf tr td 10-9 5 10-10 5 ts 10-11 5 10-12 5 -25 0 25 50 75 100 10-13 -55 -25 20 40 60 80 100 125 0. Figure 3.2 0. Forward current vs.1 0.08 0.2 0. temperature. Figure 6. load resistance.10 0. temperature.06 0. temperature.5 1 100 kΩ 2 5 10 20 50 100 0 0 5 10 15 0 -55 -25 0 25 50 75 100 IF – FORWARD CURRENT – mA VCE – COLLECTOR-EMITTER VOLTAGE – V TA – AMBIENT TEMPERATURE – °C Figure 4. collectoremitter voltage. Collector-emitter saturation voltage vs. 180 160 140 120 100 80 60 40 20 IC – COLLECTOR CURRENT – mA VCE = 10 V TA = 25°C 30 TA = 25°C IF = 15 mA IF = 10 mA RELATIVE CURRENT TRANSFER RATIO – % CTR – CURRENT TRANSFER RATIO – % PC (MAX.5 3. Current transfer ratio vs. ICEO – COLLECTOR DARK CURRENT – A 0.0 2. Collector dark current vs.100 IF – FORWARD CURRENT – mA PC – COLLECTOR POWER DISSIPATION – mW 400 IF – FORWARD CURRENT – mA 500 TA = 75°C 200 100 50 20 10 5 2 1 -25 0 25 50 75 100 125 80 300 TA = 50°C TA = 25°C TA = 0°C TA = -25°C 60 200 40 20 0 -55 100 -25 0 25 50 75 100 125 0 -55 0 0.5 1.1 0. Figure 9.5 0.02 0 -55 IF = 50 mA IC = 2 mA 10-6 5 10 -7 5 VCE = 10 V RESPONSE TIME – µs 200 100 50 20 10 5 2 1 0. Figure 2. Response time vs. forward voltage.0 TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C VF – FORWARD VOLTAGE – V Figure 1. forward current. temperature.12 VCE(SAT.) – COLLECTOR-EMITTER SATURATION VOLTAGE – V 0. Forward current vs.

) – COLLECTOR-EMITTER SATURATION VOLTAGE – V VOLTAGE GAIN AV – dB 0 VCE = 5 V IC = 2 mA TA = 25°C 7 TA = 25°C 6 5 4 3 2 1 0 0 5 10 15 IC = 0.5 VCE(SAT. forward current.5 1 f – FREQUENCY – kHz IF – FORWARD CURRENT – mA Figure 10. Frequency response. Test Circuit for Response Time VCC Test Circuit for Frequency Response VCC RD INPUT RL RD RL OUTPUT OUTPUT ~ INPUT OUTPUT 10% 90% td tr ts tf 5 . Collector-emitter saturation voltage vs. Figure 11.5 mA IC = 1 mA IC = 2 mA IC = 3 mA IC = 6 mA IC = 7 mA -5 -10 RL = 10 kΩ RL = 1 kΩ RL = 100 Ω 2 5 10 20 50 100 200 500 -15 -20 0.

agilent. 2001 5988-4114EN . October 19. Inc.com Data subject to change.semiconductor. Copyright © 2001 Agilent Technologies.www.